페이지 85 - Infineon Technologies 제품

부품 번호	제조업체	설명	패키지	재고
IGA30N60H3XKSA1	Infineon Technologies	IGBT 600V 18A 43W TO220-3 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 18A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A Power - Max: 43W Switching Energy: 1.17mJ Input Type: Standard Gate Charge: 165nC Td (on/off) @ 25°C: 18ns/207ns Test Condition: 400V, 30A, 10.5 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: PG-TO220-3-31 Full Pack	패키지: TO-220-3 Full Pack	재고7,904
IRG5K35HF12A	Infineon Technologies	MOD IGBT 1200V 35A POWIR 34 IGBT Type: - Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 70A Power - Max: 280W Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 35A Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 3.4nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: POWIR? 34 Module Supplier Device Package: POWIR? 34	패키지: POWIR? 34 Module	재고4,400
BUZ32 E3045A	Infineon Technologies	MOSFET N-CH 200V 9.5A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 400 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고4,656
IRLR2905ZTRLPBF	Infineon Technologies	MOSFET N-CH 55V 42A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 36A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고5,184
IRF100B202	Infineon Technologies	MOSFET N-CH 100V 97A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 97A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 116nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4476pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 221W (Tc) Rds On (Max) @ Id, Vgs: 8.6 mOhm @ 58A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	패키지: TO-220-3	재고103,464
IRFR3709ZTRPBF	Infineon Technologies	MOSFET N-CH 30V 86A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 86A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2330pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고62,412
BC857SE6327BTSA1	Infineon Technologies	TRANS 2PNP 45V 0.1A SOT363 Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Power - Max: 250mW Frequency - Transition: 250MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6	패키지: 6-VSSOP, SC-88, SOT-363	재고6,528
IRU3037CSTR	Infineon Technologies	IC REG CTRLR BUCK/BOOST 8SOIC Output Type: Transistor Driver Function: Step-Up, Step-Down Output Configuration: Positive Topology: Buck, Boost Number of Outputs: 1 Output Phases: 1 Voltage - Supply (Vcc/Vdd): 4.2 V ~ 25 V Frequency - Switching: 200kHz Duty Cycle (Max): 90% Synchronous Rectifier: Yes Clock Sync: No Serial Interfaces: - Control Features: Enable, Soft Start Operating Temperature: 0°C ~ 70°C (TA) Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고4,864,620
98-0503PBF	Infineon Technologies	IC REG LED BUCK 200V 8SOIC Type: - Topology: - Internal Switch(s): - Number of Outputs: - Voltage - Supply (Min): - Voltage - Supply (Max): - Voltage - Output: - Current - Output / Channel: - Frequency: - Dimming: - Applications: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고6,896
TLE92613QXXUMA2	Infineon Technologies	IC SBC 48VQFN Applications: Automotive Interface: SPI Voltage - Supply: - Package / Case: 48-VFQFN Exposed Pad Supplier Device Package: PG-VQFN-48-31 Mounting Type: Surface Mount	패키지: 48-VFQFN Exposed Pad	재고7,856
XC164CS16F40FBBKXUMA1	Infineon Technologies	IC MCU 16BIT 128KB FLASH 100TQFP Core Processor: C166SV2 Core Size: 16-Bit Speed: 40MHz Connectivity: CAN, EBI/EMI, SPI, UART/USART Peripherals: PWM, WDT Number of I/O: 79 Program Memory Size: 128KB (128K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 8K x 8 Voltage - Supply (Vcc/Vdd): 2.35 V ~ 2.7 V Data Converters: A/D 14x8/10b Oscillator Type: Internal Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: - Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	패키지: 100-LQFP	재고2,240
CYT3DLABGBQ1AESGST	Infineon Technologies	IC MCU 32BT 4.063MB FLSH 216TQFP Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F Core Size: 32-Bit Dual-Core Speed: 240MHz Connectivity: DMA, I2S, LVD, Temp Sensor, WDT Peripherals: DMA, I2S, LVD, Temp Sensor, WDT Number of I/O: 108 Program Memory Size: 4.063MB (4.063M x 8) Program Memory Type: FLASH EEPROM Size: 128K x 8 RAM Size: 384K x 8 Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Data Converters: - Oscillator Type: - Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 216-QFP Supplier Device Package: 216-TQFP	패키지: -	Request a Quote
FS75R07N2E4BPSA1	Infineon Technologies	LOW POWER ECONO AG-ECONO2B-411 IGBT Type: Trench Field Stop Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 75 A Power - Max: 250 W Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 75A Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 4.6 nF @ 25 V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-ECONO2B	패키지: -	Request a Quote
T940N18TOFXPSA1	Infineon Technologies	SCR MODULE 1800V 1759A DO200AB Structure: Single Number of SCRs, Diodes: 1 SCR Voltage - Off State: 1.8 kV Current - On State (It (AV)) (Max): 959 A Current - On State (It (RMS)) (Max): 1759 A Voltage - Gate Trigger (Vgt) (Max): 2.2 V Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 17500A @ 50Hz Current - Hold (Ih) (Max): 300 mA Operating Temperature: -40°C ~ 125°C Mounting Type: Clamp On Package / Case: DO-200AB, B-PUK	패키지: -	Request a Quote
IPP022N12NM6AKSA1	Infineon Technologies	TRENCH >=100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120 V Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 203A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 3.6V @ 275µA Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 395W (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	패키지: -	Request a Quote
IPB95R130PFD7ATMA1	Infineon Technologies	HIGH POWER_NEW FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 950 V Current - Continuous Drain (Id) @ 25°C: 36.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1.25mA Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4170 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 227W (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 25.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	패키지: -	재고5,490
MBC410700BPSA1	Infineon Technologies	MODULE GATE DRIVER Type: - Configuration: - Current: - Voltage: - Voltage - Isolation: - Package / Case: -	패키지: -	Request a Quote
FF8MR12W2M1B11BOMA1	Infineon Technologies	MOSFET 2N-CH 1200V AG-EASY2BM-2 FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 150A (Tj) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 150A, 15V (Typ) Vgs(th) (Max) @ Id: 5.55V @ 60mA Gate Charge (Qg) (Max) @ Vgs: 372nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-EASY2BM-2	패키지: -	Request a Quote
FF200R12KS4HOSA1	Infineon Technologies	IGBT MOD 1200V 275A 1400W IGBT Type: - Configuration: 2 Independent Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 275 A Power - Max: 1400 W Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 200A Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 13 nF @ 25 V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 125°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	Request a Quote
CY8CTMA1036AA-13T	Infineon Technologies	PSOC BASED - TRUETOUCH Touchscreen: 2 Wire Capacitive Resolution (Bits): 32 b Interface: I2C, SPI Voltage Reference: Internal Voltage - Supply: 1.71V ~ 5.5V, 2.6V ~ 5.5V Current - Supply: - Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	패키지: -	Request a Quote
FF4MR12W2M1HPB11BPSA1	Infineon Technologies	LOW POWER EASY FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 170A Rds On (Max) @ Id, Vgs: 4mOhm @ 200A, 18V Vgs(th) (Max) @ Id: 5.15V @ 80mA Gate Charge (Qg) (Max) @ Vgs: 594nC @ 18V Input Capacitance (Ciss) (Max) @ Vds: 17600pF @ 800V Power - Max: 20mW Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-EASY2B	패키지: -	재고54
CG7072AAT	Infineon Technologies	SEMICONDUCTOR OTHER Core Processor: - Core Size: - Speed: - Connectivity: - Peripherals: - Number of I/O: - Program Memory Size: - Program Memory Type: - EEPROM Size: - RAM Size: - Voltage - Supply (Vcc/Vdd): - Data Converters: - Oscillator Type: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote
IPD65R950CFDATMA2	Infineon Technologies	MOSFET N-CH 650V 3.9A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 36.7W (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	패키지: -	재고7,500
IPP65R280E6XKSA1	Infineon Technologies	MOSFET N-CH 650V 13.8A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 440µA Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	패키지: -	Request a Quote
BSZ0908NDXTMA2	Infineon Technologies	MOSFET 2N-CH 30V 4.8A WISON-8 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 4.5V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta), 7.6A (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V, 9mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V, 6.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 15V, 730pF @ 15V Power - Max: 700mW (Ta), 860mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-WISON-8	패키지: -	Request a Quote
IPB100N10S305ATMA2	Infineon Technologies	MOSFET_(75V 120V( FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 240µA Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 5.1mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	패키지: -	Request a Quote
CY15B102QSN-108SXIT	Infineon Technologies	IC FRAM 2MBIT SPI/QUAD 8SOIC Memory Type: Non-Volatile Memory Format: FRAM Technology: FRAM (Ferroelectric RAM) Memory Size: 2Mbit Memory Interface: SPI - Quad I/O, QPI Clock Frequency: 108 MHz Write Cycle Time - Word, Page: - Access Time: 7 ns Voltage - Supply: 1.8V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SOIC	패키지: -	Request a Quote
CG7501AAT	Infineon Technologies	IC SRAM NON VOLATILE 48FBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote

IGA30N60H3XKSA1

Infineon Technologies

IGBT 600V 18A 43W TO220-3

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 18A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Power - Max: 43W
Switching Energy: 1.17mJ
Input Type: Standard
Gate Charge: 165nC
Td (on/off) @ 25°C: 18ns/207ns
Test Condition: 400V, 30A, 10.5 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: PG-TO220-3-31 Full Pack

패키지: TO-220-3 Full Pack

재고7,904

IRG5K35HF12A

Infineon Technologies

MOD IGBT 1200V 35A POWIR 34

IGBT Type: -
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 70A
Power - Max: 280W
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 35A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 3.4nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: POWIR? 34 Module
Supplier Device Package: POWIR? 34

패키지: POWIR? 34 Module

재고4,400

BUZ32 E3045A

Infineon Technologies

MOSFET N-CH 200V 9.5A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 400 mOhm @ 6A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고4,656

IRLR2905ZTRLPBF

Infineon Technologies

MOSFET N-CH 55V 42A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 25V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 36A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고5,184

IRF100B202

Infineon Technologies

MOSFET N-CH 100V 97A TO-220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs: 116nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4476pF @ 50V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 221W (Tc)
Rds On (Max) @ Id, Vgs: 8.6 mOhm @ 58A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

패키지: TO-220-3

재고103,464

IRFR3709ZTRPBF

Infineon Technologies

MOSFET N-CH 30V 86A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2330pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고62,412

BC857SE6327BTSA1

Infineon Technologies

TRANS 2PNP 45V 0.1A SOT363

Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 250mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Supplier Device Package: PG-SOT363-6

패키지: 6-VSSOP, SC-88, SOT-363

재고6,528

IRU3037CSTR

Infineon Technologies

IC REG CTRLR BUCK/BOOST 8SOIC

Output Type: Transistor Driver
Function: Step-Up, Step-Down
Output Configuration: Positive
Topology: Buck, Boost
Number of Outputs: 1
Output Phases: 1
Voltage - Supply (Vcc/Vdd): 4.2 V ~ 25 V
Frequency - Switching: 200kHz
Duty Cycle (Max): 90%
Synchronous Rectifier: Yes
Clock Sync: No
Serial Interfaces: -
Control Features: Enable, Soft Start
Operating Temperature: 0°C ~ 70°C (TA)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고4,864,620

98-0503PBF

Infineon Technologies

IC REG LED BUCK 200V 8SOIC

Type: -
Topology: -
Internal Switch(s): -
Number of Outputs: -
Voltage - Supply (Min): -
Voltage - Supply (Max): -
Voltage - Output: -
Current - Output / Channel: -
Frequency: -
Dimming: -
Applications: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고6,896

TLE92613QXXUMA2

Infineon Technologies

IC SBC 48VQFN

Applications: Automotive
Interface: SPI
Voltage - Supply: -
Package / Case: 48-VFQFN Exposed Pad
Supplier Device Package: PG-VQFN-48-31
Mounting Type: Surface Mount

패키지: 48-VFQFN Exposed Pad

재고7,856

XC164CS16F40FBBKXUMA1

Infineon Technologies

IC MCU 16BIT 128KB FLASH 100TQFP

Core Processor: C166SV2
Core Size: 16-Bit
Speed: 40MHz
Connectivity: CAN, EBI/EMI, SPI, UART/USART
Peripherals: PWM, WDT
Number of I/O: 79
Program Memory Size: 128KB (128K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 8K x 8
Voltage - Supply (Vcc/Vdd): 2.35 V ~ 2.7 V
Data Converters: A/D 14x8/10b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: -
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

패키지: 100-LQFP

재고2,240

CYT3DLABGBQ1AESGST

Infineon Technologies

IC MCU 32BT 4.063MB FLSH 216TQFP

Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Core Size: 32-Bit Dual-Core
Speed: 240MHz
Connectivity: DMA, I2S, LVD, Temp Sensor, WDT
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Number of I/O: 108
Program Memory Size: 4.063MB (4.063M x 8)
Program Memory Type: FLASH
EEPROM Size: 128K x 8
RAM Size: 384K x 8
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Data Converters: -
Oscillator Type: -
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 216-QFP
Supplier Device Package: 216-TQFP

패키지: -

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FS75R07N2E4BPSA1

Infineon Technologies

LOW POWER ECONO AG-ECONO2B-411

IGBT Type: Trench Field Stop
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 75 A
Power - Max: 250 W
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 75A
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.6 nF @ 25 V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-ECONO2B

패키지: -

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T940N18TOFXPSA1

Infineon Technologies

SCR MODULE 1800V 1759A DO200AB

Structure: Single
Number of SCRs, Diodes: 1 SCR
Voltage - Off State: 1.8 kV
Current - On State (It (AV)) (Max): 959 A
Current - On State (It (RMS)) (Max): 1759 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17500A @ 50Hz
Current - Hold (Ih) (Max): 300 mA
Operating Temperature: -40°C ~ 125°C
Mounting Type: Clamp On
Package / Case: DO-200AB, B-PUK

패키지: -

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IPP022N12NM6AKSA1

Infineon Technologies

TRENCH >=100V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 120 V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 203A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs(th) (Max) @ Id: 3.6V @ 275µA
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-1
Package / Case: TO-220-3

패키지: -

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IPB95R130PFD7ATMA1

Infineon Technologies

HIGH POWER_NEW

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 950 V
Current - Continuous Drain (Id) @ 25°C: 36.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 1.25mA
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4170 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 25.1A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3-2
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

패키지: -

재고5,490

MBC410700BPSA1

Infineon Technologies

MODULE GATE DRIVER

Type: -
Configuration: -
Current: -
Voltage: -
Voltage - Isolation: -
Package / Case: -

패키지: -

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FF8MR12W2M1B11BOMA1

Infineon Technologies

MOSFET 2N-CH 1200V AG-EASY2BM-2

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 150A (Tj)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 150A, 15V (Typ)
Vgs(th) (Max) @ Id: 5.55V @ 60mA
Gate Charge (Qg) (Max) @ Vgs: 372nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 800V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-EASY2BM-2

패키지: -

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FF200R12KS4HOSA1

Infineon Technologies

IGBT MOD 1200V 275A 1400W

IGBT Type: -
Configuration: 2 Independent
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 275 A
Power - Max: 1400 W
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 200A
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

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CY8CTMA1036AA-13T

Infineon Technologies

PSOC BASED - TRUETOUCH

Touchscreen: 2 Wire Capacitive
Resolution (Bits): 32 b
Interface: I2C, SPI
Voltage Reference: Internal
Voltage - Supply: 1.71V ~ 5.5V, 2.6V ~ 5.5V
Current - Supply: -
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

패키지: -

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FF4MR12W2M1HPB11BPSA1

Infineon Technologies

LOW POWER EASY

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 170A
Rds On (Max) @ Id, Vgs: 4mOhm @ 200A, 18V
Vgs(th) (Max) @ Id: 5.15V @ 80mA
Gate Charge (Qg) (Max) @ Vgs: 594nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds: 17600pF @ 800V
Power - Max: 20mW
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-EASY2B

패키지: -

재고54

CG7072AAT

Infineon Technologies

SEMICONDUCTOR OTHER

Core Processor: -
Core Size: -
Speed: -
Connectivity: -
Peripherals: -
Number of I/O: -
Program Memory Size: -
Program Memory Type: -
EEPROM Size: -
RAM Size: -
Voltage - Supply (Vcc/Vdd): -
Data Converters: -
Oscillator Type: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

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IPD65R950CFDATMA2

Infineon Technologies

MOSFET N-CH 650V 3.9A TO252-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 36.7W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

패키지: -

재고7,500

IPP65R280E6XKSA1

Infineon Technologies

MOSFET N-CH 650V 13.8A TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3
Package / Case: TO-220-3

패키지: -

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BSZ0908NDXTMA2

Infineon Technologies

MOSFET 2N-CH 30V 4.8A WISON-8

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta), 7.6A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V, 9mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V, 6.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 15V, 730pF @ 15V
Power - Max: 700mW (Ta), 860mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-WISON-8

패키지: -

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IPB100N10S305ATMA2

Infineon Technologies

MOSFET_(75V 120V(

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 240µA
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3-2
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

패키지: -

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CY15B102QSN-108SXIT

Infineon Technologies

IC FRAM 2MBIT SPI/QUAD 8SOIC

Memory Type: Non-Volatile
Memory Format: FRAM
Technology: FRAM (Ferroelectric RAM)
Memory Size: 2Mbit
Memory Interface: SPI - Quad I/O, QPI
Clock Frequency: 108 MHz
Write Cycle Time - Word, Page: -
Access Time: 7 ns
Voltage - Supply: 1.8V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOIC

패키지: -

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CG7501AAT

Infineon Technologies

IC SRAM NON VOLATILE 48FBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

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