페이지 17 - IXYS 제품 - 트랜지스터 - FET, MOSFET - 단일

IXTP60N20X4

IXYS

MOSFET ULTRA X4 200V 60A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220 (IXTP)
Package / Case: TO-220-3

패키지: -

재고1,056

MOSFET (Metal Oxide)

200 V

60A (Tc)

10V

4.5V @ 250µA

33 nC @ 10 V

2450 pF @ 25 V

±20V

-

250W (Tc)

21mOhm @ 30A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-220 (IXTP)

TO-220-3

IXFN70N120SK

IXYS

SICFET N-CH 1200V 68A SOT227B

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs(th) (Max) @ Id: 4V @ 15mA
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 1000 V
Vgs (Max): +20V, -5V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227B
Package / Case: SOT-227-4, miniBLOC

패키지: -

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SiCFET (Silicon Carbide)

1200 V

68A (Tc)

20V

4V @ 15mA

161 nC @ 20 V

2790 pF @ 1000 V

+20V, -5V

-

34mOhm @ 50A, 20V

-40°C ~ 175°C (TJ)

Chassis Mount

SOT-227B

SOT-227-4, miniBLOC

IXTY08N50D2-TRL

IXYS

MOSFET N-CH 500V 800MA TO252AA

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tj)
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs(th) (Max) @ Id: 4.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 25 V
Vgs (Max): ±20V
FET Feature: Depletion Mode
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 4.6Ohm @ 400mA, 0V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

패키지: -

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MOSFET (Metal Oxide)

500 V

800mA (Tj)

0V

4.5V @ 25µA

12.7 nC @ 5 V

312 pF @ 25 V

±20V

Depletion Mode

60W (Tc)

4.6Ohm @ 400mA, 0V

-55°C ~ 150°C (TJ)

Surface Mount

TO-252AA

TO-252-3, DPAK (2 Leads + Tab), SC-63

IXFA28N60X3

IXYS

DISCRETE MOSFET 28A 600V X3 TO26

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

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-

IXFT150N25X3HV

IXYS

MOSFET N-CH 250V 150A TO268HV

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250 V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 780W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 75A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-268HV (IXFT)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

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MOSFET (Metal Oxide)

250 V

150A (Tc)

10V

4.5V @ 4mA

154 nC @ 10 V

10400 pF @ 25 V

±20V

-

780W (Tc)

9mOhm @ 75A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-268HV (IXFT)

TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

IXTY1R6N100D2-TRL

IXYS

MOSFET N-CH 1000V 1.6A TO252

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000 V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tj)
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V
Vgs (Max): ±20V
FET Feature: Depletion Mode
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

패키지: -

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MOSFET (Metal Oxide)

1000 V

1.6A (Tj)

0V

4.5V @ 100µA

27 nC @ 5 V

645 pF @ 25 V

±20V

Depletion Mode

100W (Tc)

10Ohm @ 800mA, 0V

-55°C ~ 150°C (TJ)

Surface Mount

TO-252AA

TO-252-3, DPAK (2 Leads + Tab), SC-63

IXFK220N20X3

IXYS

MOSFET N-CH 200V 220A TO264

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 960W (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 110A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-264
Package / Case: TO-264-3, TO-264AA

패키지: -

재고30

MOSFET (Metal Oxide)

200 V

220A (Tc)

10V

4.5V @ 4mA

204 nC @ 10 V

13600 pF @ 25 V

±20V

-

960W (Tc)

6.2mOhm @ 110A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-264

TO-264-3, TO-264AA

IXFT30N60X

IXYS

MOSFET N-CH 30A TO268

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

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-

IXTA130N15X4-7

IXYS

MOSFET N-CH 150V 130A TO263-7

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4770 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 400W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 65A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263-7 (IXTA)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)

패키지: -

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MOSFET (Metal Oxide)

150 V

130A (Tc)

10V

4.5V @ 250µA

87 nC @ 10 V

4770 pF @ 25 V

±20V

-

400W (Tc)

8mOhm @ 65A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-263-7 (IXTA)

TO-263-7, D2PAK (6 Leads + Tab)

IXFH70N65X3

IXYS

MOSFET 70A 650V X3 TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.2V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 780W (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 35A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247 (IXFH)
Package / Case: TO-247-3

패키지: -

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MOSFET (Metal Oxide)

650 V

70A (Tc)

10V

5.2V @ 4mA

66 nC @ 10 V

4600 pF @ 25 V

±20V

-

780W (Tc)

44mOhm @ 35A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-247 (IXFH)

TO-247-3

IXTP4N70X2M

IXYS

MOSFET N-CH 700V 4A TO220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 700 V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220 Isolated Tab
Package / Case: TO-220-3 Full Pack, Isolated Tab

패키지: -

재고72

MOSFET (Metal Oxide)

700 V

4A (Tc)

10V

4.5V @ 250µA

11.8 nC @ 10 V

386 pF @ 25 V

±30V

-

30W (Tc)

850mOhm @ 2A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220 Isolated Tab

TO-220-3 Full Pack, Isolated Tab

IXFA72N20X3

IXYS

MOSFET N-CH 200V 72A TO263AA

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3780 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 320W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 36A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263AA (IXFA)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

패키지: -

재고456

MOSFET (Metal Oxide)

200 V

72A (Tc)

10V

4.5V @ 1.5mA

55 nC @ 10 V

3780 pF @ 25 V

±20V

-

320W (Tc)

20mOhm @ 36A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-263AA (IXFA)

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IXTY01N100

IXYS

MOSFET N-CH 1000V 100MA TO252AA

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000 V
Current - Continuous Drain (Id) @ 25°C: 100mA (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 54 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 80Ohm @ 100mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

패키지: -

재고73,188

MOSFET (Metal Oxide)

1000 V

100mA (Tc)

10V

4.5V @ 25µA

6.9 nC @ 10 V

54 pF @ 25 V

±20V

-

25W (Tc)

80Ohm @ 100mA, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-252AA

TO-252-3, DPAK (2 Leads + Tab), SC-63

IXFM6N90

IXYS

MOSFET N-CH 900V 6A TO-204AA

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

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-

IXTP230N04T4

IXYS

MOSFET N-CH 40V 230A TO220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V
Vgs (Max): ±15V
FET Feature: -
Power Dissipation (Max): 340W (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 115A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220-3
Package / Case: TO-220-3

패키지: -

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MOSFET (Metal Oxide)

40 V

230A (Tc)

10V

4V @ 250µA

140 nC @ 10 V

7400 pF @ 25 V

±15V

-

340W (Tc)

2.9mOhm @ 115A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-220-3

IXFA22N65X2-TRL

IXYS

MOSFET N-CH 650V 22A TO263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 390W (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 11A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2PAK)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

패키지: -

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MOSFET (Metal Oxide)

650 V

22A (Tc)

10V

5V @ 1.5mA

37 nC @ 10 V

2190 pF @ 25 V

±30V

-

390W (Tc)

145mOhm @ 11A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-263 (D2PAK)

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IXTY4N65X2-TRL

IXYS

MOSFET N-CH 650V 4A TO252

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 455 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

패키지: -

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MOSFET (Metal Oxide)

650 V

4A (Tc)

10V

5V @ 250µA

8.3 nC @ 10 V

455 pF @ 25 V

±30V

-

80W (Tc)

850mOhm @ 2A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-252AA

TO-252-3, DPAK (2 Leads + Tab), SC-63

IXFA72N30X3

IXYS

MOSFET N-CH 300V 72A TO263AA

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 300 V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 390W (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 36A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263AA (IXFA)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

패키지: -

재고57

MOSFET (Metal Oxide)

300 V

72A (Tc)

10V

4.5V @ 1.5mA

82 nC @ 10 V

5400 pF @ 25 V

±20V

-

390W (Tc)

19mOhm @ 36A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-263AA (IXFA)

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IXTA102N15T-TRL

IXYS

MOSFET N-CH 150V 102A TO263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5220 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 455W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 51A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2PAK)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

패키지: -

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MOSFET (Metal Oxide)

150 V

102A (Tc)

10V

5V @ 1mA

87 nC @ 10 V

5220 pF @ 25 V

±20V

-

455W (Tc)

18mOhm @ 51A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

TO-263 (D2PAK)

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IXTA3N110-TRL

IXYS

MOSFET N-CH 1100V 3A TO263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1100 V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 1.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2PAK)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

패키지: -

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MOSFET (Metal Oxide)

1100 V

3A (Tc)

10V

4.5V @ 250µA

39 nC @ 10 V

1300 pF @ 25 V

±20V

-

150W (Tc)

4Ohm @ 1.5A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-263 (D2PAK)

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IXTA6N50D2-TRL

IXYS

MOSFET N-CH 500V 6A TO263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 6A (Tj)
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
Vgs (Max): ±20V
FET Feature: Depletion Mode
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 3A, 0V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2PAK)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

패키지: -

재고1,092

MOSFET (Metal Oxide)

500 V

6A (Tj)

0V

4.5V @ 250µA

96 nC @ 5 V

2800 pF @ 25 V

±20V

Depletion Mode

300W (Tc)

500mOhm @ 3A, 0V

-55°C ~ 150°C (TJ)

Surface Mount

TO-263 (D2PAK)

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IXTM1630

IXYS

POWER MOSFET TO-3

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

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-

IXFK1801

IXYS

MOSFET N-CH 18A TO264

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

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-

IXTM11N80

IXYS

MOSFET N-CH 800V 11A TO204AA

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 5.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-204AA (IXTM)
Package / Case: TO-204AA, TO-3

패키지: -

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MOSFET (Metal Oxide)

800 V

11A (Tc)

10V

4.5V @ 250µA

170 nC @ 10 V

4500 pF @ 25 V

±20V

-

300W (Tc)

950mOhm @ 5.5A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-204AA (IXTM)

TO-204AA, TO-3

IXFT140N10P-TRL

IXYS

MOSFET N-CH 100V 140A TO268

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs(th) (Max) @ Id: 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 600W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 70A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-268
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

패키지: -

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MOSFET (Metal Oxide)

100 V

140A (Tc)

10V, 15V

5V @ 4mA

155 nC @ 10 V

4700 pF @ 25 V

±20V

-

600W (Tc)

11mOhm @ 70A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

TO-268

TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

IXTV270N055T2

IXYS

MOSFET N-CH PLUS220

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

Request a Quote

-

IXFA110N15T2-TRL

IXYS

MOSFET N-CH 150V 110A TO263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 480W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 500mA, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263AA (IXFA)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

패키지: -

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MOSFET (Metal Oxide)

150 V

110A (Tc)

10V

4.5V @ 250µA

150 nC @ 10 V

8600 pF @ 25 V

±20V

-

480W (Tc)

13mOhm @ 500mA, 10V

-55°C ~ 175°C (TJ)

Surface Mount

TO-263AA (IXFA)

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IXFK120N60X3

IXYS

DISCRETE MOSFET 120A 600V X3 TO2

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

Request a Quote

-

부품 번호	제조업체	설명	패키지	재고	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IXTP60N20X4	IXYS	MOSFET ULTRA X4 200V 60A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 (IXTP) Package / Case: TO-220-3	패키지: -	재고1,056	MOSFET (Metal Oxide)	200 V	60A (Tc)	10V	4.5V @ 250µA	33 nC @ 10 V	2450 pF @ 25 V	±20V	-	250W (Tc)	21mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220 (IXTP)	TO-220-3
IXFN70N120SK	IXYS	SICFET N-CH 1200V 68A SOT227B FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 68A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 4V @ 15mA Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 1000 V Vgs (Max): +20V, -5V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	패키지: -	Request a Quote	SiCFET (Silicon Carbide)	1200 V	68A (Tc)	20V	4V @ 15mA	161 nC @ 20 V	2790 pF @ 1000 V	+20V, -5V	-	-	34mOhm @ 50A, 20V	-40°C ~ 175°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXTY08N50D2-TRL	IXYS	MOSFET N-CH 500V 800MA TO252AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 800mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: 4.5V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 25 V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 4.6Ohm @ 400mA, 0V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	패키지: -	Request a Quote	MOSFET (Metal Oxide)	500 V	800mA (Tj)	0V	4.5V @ 25µA	12.7 nC @ 5 V	312 pF @ 25 V	±20V	Depletion Mode	60W (Tc)	4.6Ohm @ 400mA, 0V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
IXFA28N60X3	IXYS	DISCRETE MOSFET 28A 600V X3 TO26 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXFT150N25X3HV	IXYS	MOSFET N-CH 250V 150A TO268HV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 780W (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 75A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268HV (IXFT) Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	패키지: -	Request a Quote	MOSFET (Metal Oxide)	250 V	150A (Tc)	10V	4.5V @ 4mA	154 nC @ 10 V	10400 pF @ 25 V	±20V	-	780W (Tc)	9mOhm @ 75A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268HV (IXFT)	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
IXTY1R6N100D2-TRL	IXYS	MOSFET N-CH 1000V 1.6A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 1.6A (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	패키지: -	Request a Quote	MOSFET (Metal Oxide)	1000 V	1.6A (Tj)	0V	4.5V @ 100µA	27 nC @ 5 V	645 pF @ 25 V	±20V	Depletion Mode	100W (Tc)	10Ohm @ 800mA, 0V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
IXFK220N20X3	IXYS	MOSFET N-CH 200V 220A TO264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 220A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 960W (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 110A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 Package / Case: TO-264-3, TO-264AA	패키지: -	재고30	MOSFET (Metal Oxide)	200 V	220A (Tc)	10V	4.5V @ 4mA	204 nC @ 10 V	13600 pF @ 25 V	±20V	-	960W (Tc)	6.2mOhm @ 110A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264	TO-264-3, TO-264AA
IXFT30N60X	IXYS	MOSFET N-CH 30A TO268 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXTA130N15X4-7	IXYS	MOSFET N-CH 150V 130A TO263-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4770 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 400W (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 65A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-7 (IXTA) Package / Case: TO-263-7, D2PAK (6 Leads + Tab)	패키지: -	Request a Quote	MOSFET (Metal Oxide)	150 V	130A (Tc)	10V	4.5V @ 250µA	87 nC @ 10 V	4770 pF @ 25 V	±20V	-	400W (Tc)	8mOhm @ 65A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-7 (IXTA)	TO-263-7, D2PAK (6 Leads + Tab)
IXFH70N65X3	IXYS	MOSFET 70A 650V X3 TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.2V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 780W (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 35A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXFH) Package / Case: TO-247-3	패키지: -	Request a Quote	MOSFET (Metal Oxide)	650 V	70A (Tc)	10V	5.2V @ 4mA	66 nC @ 10 V	4600 pF @ 25 V	±20V	-	780W (Tc)	44mOhm @ 35A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXFH)	TO-247-3
IXTP4N70X2M	IXYS	MOSFET N-CH 700V 4A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700 V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Isolated Tab Package / Case: TO-220-3 Full Pack, Isolated Tab	패키지: -	재고72	MOSFET (Metal Oxide)	700 V	4A (Tc)	10V	4.5V @ 250µA	11.8 nC @ 10 V	386 pF @ 25 V	±30V	-	30W (Tc)	850mOhm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220 Isolated Tab	TO-220-3 Full Pack, Isolated Tab
IXFA72N20X3	IXYS	MOSFET N-CH 200V 72A TO263AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3780 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 320W (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 36A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AA (IXFA) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	패키지: -	재고456	MOSFET (Metal Oxide)	200 V	72A (Tc)	10V	4.5V @ 1.5mA	55 nC @ 10 V	3780 pF @ 25 V	±20V	-	320W (Tc)	20mOhm @ 36A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263AA (IXFA)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXTY01N100	IXYS	MOSFET N-CH 1000V 100MA TO252AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 100mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 54 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 80Ohm @ 100mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	패키지: -	재고73,188	MOSFET (Metal Oxide)	1000 V	100mA (Tc)	10V	4.5V @ 25µA	6.9 nC @ 10 V	54 pF @ 25 V	±20V	-	25W (Tc)	80Ohm @ 100mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
IXFM6N90	IXYS	MOSFET N-CH 900V 6A TO-204AA FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXTP230N04T4	IXYS	MOSFET N-CH 40V 230A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 230A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 340W (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 115A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	패키지: -	Request a Quote	MOSFET (Metal Oxide)	40 V	230A (Tc)	10V	4V @ 250µA	140 nC @ 10 V	7400 pF @ 25 V	±15V	-	340W (Tc)	2.9mOhm @ 115A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
IXFA22N65X2-TRL	IXYS	MOSFET N-CH 650V 22A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 390W (Tc) Rds On (Max) @ Id, Vgs: 145mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	패키지: -	Request a Quote	MOSFET (Metal Oxide)	650 V	22A (Tc)	10V	5V @ 1.5mA	37 nC @ 10 V	2190 pF @ 25 V	±30V	-	390W (Tc)	145mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXTY4N65X2-TRL	IXYS	MOSFET N-CH 650V 4A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 455 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	패키지: -	Request a Quote	MOSFET (Metal Oxide)	650 V	4A (Tc)	10V	5V @ 250µA	8.3 nC @ 10 V	455 pF @ 25 V	±30V	-	80W (Tc)	850mOhm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
IXFA72N30X3	IXYS	MOSFET N-CH 300V 72A TO263AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300 V Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 390W (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 36A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AA (IXFA) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	패키지: -	재고57	MOSFET (Metal Oxide)	300 V	72A (Tc)	10V	4.5V @ 1.5mA	82 nC @ 10 V	5400 pF @ 25 V	±20V	-	390W (Tc)	19mOhm @ 36A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263AA (IXFA)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXTA102N15T-TRL	IXYS	MOSFET N-CH 150V 102A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 102A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5220 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 455W (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 51A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	패키지: -	Request a Quote	MOSFET (Metal Oxide)	150 V	102A (Tc)	10V	5V @ 1mA	87 nC @ 10 V	5220 pF @ 25 V	±20V	-	455W (Tc)	18mOhm @ 51A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXTA3N110-TRL	IXYS	MOSFET N-CH 1100V 3A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1100 V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 4Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	패키지: -	Request a Quote	MOSFET (Metal Oxide)	1100 V	3A (Tc)	10V	4.5V @ 250µA	39 nC @ 10 V	1300 pF @ 25 V	±20V	-	150W (Tc)	4Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXTA6N50D2-TRL	IXYS	MOSFET N-CH 500V 6A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 6A (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 3A, 0V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	패키지: -	재고1,092	MOSFET (Metal Oxide)	500 V	6A (Tj)	0V	4.5V @ 250µA	96 nC @ 5 V	2800 pF @ 25 V	±20V	Depletion Mode	300W (Tc)	500mOhm @ 3A, 0V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXTM1630	IXYS	POWER MOSFET TO-3 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXFK1801	IXYS	MOSFET N-CH 18A TO264 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXTM11N80	IXYS	MOSFET N-CH 800V 11A TO204AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-204AA (IXTM) Package / Case: TO-204AA, TO-3	패키지: -	Request a Quote	MOSFET (Metal Oxide)	800 V	11A (Tc)	10V	4.5V @ 250µA	170 nC @ 10 V	4500 pF @ 25 V	±20V	-	300W (Tc)	950mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-204AA (IXTM)	TO-204AA, TO-3
IXFT140N10P-TRL	IXYS	MOSFET N-CH 100V 140A TO268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 600W (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 70A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	패키지: -	Request a Quote	MOSFET (Metal Oxide)	100 V	140A (Tc)	10V, 15V	5V @ 4mA	155 nC @ 10 V	4700 pF @ 25 V	±20V	-	600W (Tc)	11mOhm @ 70A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-268	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
IXTV270N055T2	IXYS	MOSFET N-CH PLUS220 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXFA110N15T2-TRL	IXYS	MOSFET N-CH 150V 110A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 480W (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AA (IXFA) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	패키지: -	Request a Quote	MOSFET (Metal Oxide)	150 V	110A (Tc)	10V	4.5V @ 250µA	150 nC @ 10 V	8600 pF @ 25 V	±20V	-	480W (Tc)	13mOhm @ 500mA, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263AA (IXFA)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXFK120N60X3	IXYS	DISCRETE MOSFET 120A 600V X3 TO2 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-