IXYS 제품 - 트랜지스터 - FET, MOSFET - 단일

IXTV270N055T2S

IXYS

MOSFET N-CH PLUS220

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

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-

IXTV86N25T

IXYS

MOSFET N-CH PLUS220

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

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-

IXFX120N60X3

IXYS

DISCRETE MOSFET 120A 600V X3 PLU

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

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-

IXTP12N65X2M

IXYS

MOSFET N-CH 650V 12A TO220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220 Isolated Tab
Package / Case: TO-220-3 Full Pack, Isolated Tab

패키지: -

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MOSFET (Metal Oxide)

650 V

12A (Tc)

10V

4.5V @ 250µA

17.7 nC @ 10 V

1100 pF @ 25 V

±30V

-

40W (Tc)

300mOhm @ 6A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220 Isolated Tab

TO-220-3 Full Pack, Isolated Tab

IXFK210N30X3

IXYS

MOSFET N-CH 300V 210A TO264

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 300 V
Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24200 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1250W (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 105A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-264
Package / Case: TO-264-3, TO-264AA

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MOSFET (Metal Oxide)

300 V

210A (Tc)

10V

4.5V @ 8mA

375 nC @ 10 V

24200 pF @ 25 V

±20V

-

1250W (Tc)

5.5mOhm @ 105A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-264

TO-264-3, TO-264AA

IXFQ120N25X3

IXYS

MOSFET N-CHANNEL 250V 120A TO3P

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250 V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7870 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 520W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 60A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3P
Package / Case: TO-3P-3, SC-65-3

패키지: -

재고75

MOSFET (Metal Oxide)

250 V

120A (Tc)

10V

4.5V @ 4mA

122 nC @ 10 V

7870 pF @ 25 V

±20V

-

520W (Tc)

12mOhm @ 60A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-3P

TO-3P-3, SC-65-3

IXFT21N50F

IXYS

MOSFET N-CH 21A TO268

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

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IXTH1918

IXYS

MOSFET N-CH TO247

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

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IXTA2R4N120P-TRL

IXYS

MOSFET N-CH 1200V 2.4A TO263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1207 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 1.2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2PAK)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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MOSFET (Metal Oxide)

1200 V

2.4A (Tc)

10V

4.5V @ 250µA

37 nC @ 10 V

1207 pF @ 25 V

±30V

-

125W (Tc)

7.5Ohm @ 1.2A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-263 (D2PAK)

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IXFN240N25X3

IXYS

MOSFET N-CH 250V 240A SOT227B

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250 V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 345 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23800 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 695W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 120A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227B
Package / Case: SOT-227-4, miniBLOC

패키지: -

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MOSFET (Metal Oxide)

250 V

240A (Tc)

10V

4.5V @ 8mA

345 nC @ 10 V

23800 pF @ 25 V

±20V

-

695W (Tc)

4.5mOhm @ 120A, 10V

-55°C ~ 150°C (TJ)

Chassis Mount

SOT-227B

SOT-227-4, miniBLOC

IXTA180N10T-TRL

IXYS

MOSFET N-CH 100V 180A TO263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 480W (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2PAK)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

패키지: -

재고7,149

MOSFET (Metal Oxide)

100 V

180A (Tc)

10V

4.5V @ 250µA

151 nC @ 10 V

6900 pF @ 25 V

±20V

-

480W (Tc)

6.4mOhm @ 25A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

TO-263 (D2PAK)

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IXFH60N60X3

IXYS

MOSFET ULTRA JCT 600V 60A TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 625W (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247
Package / Case: TO-247-3

패키지: -

재고3

MOSFET (Metal Oxide)

600 V

60A (Tc)

10V

5V @ 4mA

51 nC @ 10 V

3450 pF @ 25 V

±20V

-

625W (Tc)

51mOhm @ 30A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-247

TO-247-3

IXFT78N60X3HV

IXYS

MOSFET ULTRA 600V 78A TO268HV

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 780W (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 39A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-268HV (IXFT)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

패키지: -

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MOSFET (Metal Oxide)

600 V

78A (Tc)

10V

5V @ 4mA

70 nC @ 10 V

4700 pF @ 25 V

±20V

-

780W (Tc)

38mOhm @ 39A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-268HV (IXFT)

TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

IXTP48N20TM

IXYS

MOSFET N-CH 200V 48A TO220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 24A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220 Isolated Tab
Package / Case: TO-220-3 Full Pack, Isolated Tab

패키지: -

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MOSFET (Metal Oxide)

200 V

48A (Tc)

10V

4.5V @ 250µA

60 nC @ 10 V

3090 pF @ 25 V

±30V

-

250W (Tc)

50mOhm @ 24A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-220 Isolated Tab

TO-220-3 Full Pack, Isolated Tab

IXFA36N20X3

IXYS

MOSFET N-CH 200V 36A TO263AA

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1425 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 176W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 18A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263AA (IXFA)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

패키지: -

재고555

MOSFET (Metal Oxide)

200 V

36A (Tc)

10V

4.5V @ 500µA

21 nC @ 10 V

1425 pF @ 25 V

±20V

-

176W (Tc)

45mOhm @ 18A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-263AA (IXFA)

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IXTQ32P20T

IXYS

MOSFET P-CH 200V 32A TO3P

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V
Vgs (Max): ±15V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 16A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3P
Package / Case: TO-3P-3, SC-65-3

패키지: -

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MOSFET (Metal Oxide)

200 V

32A (Tc)

10V

4V @ 250µA

185 nC @ 10 V

14500 pF @ 25 V

±15V

-

300W (Tc)

130mOhm @ 16A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-3P

TO-3P-3, SC-65-3

IXTA02N250HV-TRL

IXYS

MOSFET N-CH 2500V 200MA TO263HV

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 2500 V
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 116 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 450Ohm @ 50mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263HV
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

패키지: -

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MOSFET (Metal Oxide)

2500 V

200mA (Tc)

10V

4.5V @ 250µA

7.4 nC @ 10 V

116 pF @ 25 V

±20V

-

83W (Tc)

450Ohm @ 50mA, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-263HV

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IXFT80N65X2HV

IXYS

MOSFET N-CH 650V 80A TO268HV

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 890W (Tc)
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-268HV (IXFT)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

패키지: -

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MOSFET (Metal Oxide)

650 V

80A (Tc)

10V

5V @ 4mA

140 nC @ 10 V

8300 pF @ 25 V

±30V

-

890W (Tc)

-

-55°C ~ 150°C (TJ)

Surface Mount

TO-268HV (IXFT)

TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

IXFH34N65X3

IXYS

MOSFET 34A 650V X3 TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.2V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2025 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 446W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247 (IXFH)
Package / Case: TO-247-3

패키지: -

재고621

MOSFET (Metal Oxide)

650 V

34A (Tc)

10V

5.2V @ 2.5mA

29 nC @ 10 V

2025 pF @ 25 V

±20V

-

446W (Tc)

100mOhm @ 17A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-247 (IXFH)

TO-247-3

IXFP130N15X3

IXYS

MOSFET N-CH 150V 130A TO220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5230 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 390W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 65A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220-3
Package / Case: TO-220-3

패키지: -

재고3

MOSFET (Metal Oxide)

150 V

130A (Tc)

10V

4.5V @ 1.5mA

80 nC @ 10 V

5230 pF @ 25 V

±20V

-

390W (Tc)

9mOhm @ 65A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220-3

IXFN140N60X3

IXYS

DISCRETE MOSFET 140A 600V X3 SOT

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

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-

IXFH76N15T2

IXYS

MOSFET N-CH 150V 76A TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 350W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 38A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247 (IXTH)
Package / Case: TO-247-3

패키지: -

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MOSFET (Metal Oxide)

150 V

76A (Tc)

10V

4.5V @ 250µA

97 nC @ 10 V

5800 pF @ 25 V

±20V

-

350W (Tc)

22mOhm @ 38A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-247 (IXTH)

TO-247-3

IXFP50N20X3

IXYS

DISCMSFT NCHULTRJNCTX3CLASS TO-2

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 240W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220-3 (IXFP)
Package / Case: TO-220-3

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MOSFET (Metal Oxide)

200 V

50A (Tc)

10V

4.5V @ 1mA

33 nC @ 10 V

2100 pF @ 25 V

±20V

-

240W (Tc)

30mOhm @ 25A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220-3 (IXFP)

TO-220-3

IXTA30N25L2

IXYS

MOSFET N-CH 250V 30A TO263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250 V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 355W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2PAK)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

패키지: -

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MOSFET (Metal Oxide)

250 V

30A (Tc)

10V

4.5V @ 250µA

130 nC @ 10 V

3200 pF @ 25 V

±20V

-

355W (Tc)

140mOhm @ 15A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-263 (D2PAK)

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IXTQ86N25T

IXYS

MOSFET N-CH 250V 86A TO3P

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250 V
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5330 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 540W (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 43A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3P
Package / Case: TO-3P-3, SC-65-3

패키지: -

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MOSFET (Metal Oxide)

250 V

86A (Tc)

10V

5V @ 1mA

105 nC @ 10 V

5330 pF @ 25 V

±30V

-

540W (Ta)

37mOhm @ 43A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-3P

TO-3P-3, SC-65-3

IXFK110N65X3

IXYS

DISCRETE MOSFET 110A 650V X3 TO2

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

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-

IXTX660N04T4

IXYS

DISC MSFT NCHTRENCHGATE-GEN4 TO-

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: PLUS247™-3
Package / Case: TO-247-3 Variant

패키지: -

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-

Through Hole

PLUS247™-3

TO-247-3 Variant

IXTQ36N30P-PDP

IXYS

MOSFET N-CH 300V 36A TO3P

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

Request a Quote

-

부품 번호	제조업체	설명	패키지	재고	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IXTV270N055T2S	IXYS	MOSFET N-CH PLUS220 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXTV86N25T	IXYS	MOSFET N-CH PLUS220 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXFX120N60X3	IXYS	DISCRETE MOSFET 120A 600V X3 PLU FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXTP12N65X2M	IXYS	MOSFET N-CH 650V 12A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Isolated Tab Package / Case: TO-220-3 Full Pack, Isolated Tab	패키지: -	Request a Quote	MOSFET (Metal Oxide)	650 V	12A (Tc)	10V	4.5V @ 250µA	17.7 nC @ 10 V	1100 pF @ 25 V	±30V	-	40W (Tc)	300mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220 Isolated Tab	TO-220-3 Full Pack, Isolated Tab
IXFK210N30X3	IXYS	MOSFET N-CH 300V 210A TO264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300 V Current - Continuous Drain (Id) @ 25°C: 210A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 24200 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1250W (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 105A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 Package / Case: TO-264-3, TO-264AA	패키지: -	Request a Quote	MOSFET (Metal Oxide)	300 V	210A (Tc)	10V	4.5V @ 8mA	375 nC @ 10 V	24200 pF @ 25 V	±20V	-	1250W (Tc)	5.5mOhm @ 105A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264	TO-264-3, TO-264AA
IXFQ120N25X3	IXYS	MOSFET N-CHANNEL 250V 120A TO3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7870 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 520W (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 60A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	패키지: -	재고75	MOSFET (Metal Oxide)	250 V	120A (Tc)	10V	4.5V @ 4mA	122 nC @ 10 V	7870 pF @ 25 V	±20V	-	520W (Tc)	12mOhm @ 60A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
IXFT21N50F	IXYS	MOSFET N-CH 21A TO268 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXTH1918	IXYS	MOSFET N-CH TO247 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXTA2R4N120P-TRL	IXYS	MOSFET N-CH 1200V 2.4A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1207 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 1.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	패키지: -	Request a Quote	MOSFET (Metal Oxide)	1200 V	2.4A (Tc)	10V	4.5V @ 250µA	37 nC @ 10 V	1207 pF @ 25 V	±30V	-	125W (Tc)	7.5Ohm @ 1.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXFN240N25X3	IXYS	MOSFET N-CH 250V 240A SOT227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 345 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 23800 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 695W (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 120A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	패키지: -	Request a Quote	MOSFET (Metal Oxide)	250 V	240A (Tc)	10V	4.5V @ 8mA	345 nC @ 10 V	23800 pF @ 25 V	±20V	-	695W (Tc)	4.5mOhm @ 120A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXTA180N10T-TRL	IXYS	MOSFET N-CH 100V 180A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 480W (Tc) Rds On (Max) @ Id, Vgs: 6.4mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	패키지: -	재고7,149	MOSFET (Metal Oxide)	100 V	180A (Tc)	10V	4.5V @ 250µA	151 nC @ 10 V	6900 pF @ 25 V	±20V	-	480W (Tc)	6.4mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXFH60N60X3	IXYS	MOSFET ULTRA JCT 600V 60A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 625W (Tc) Rds On (Max) @ Id, Vgs: 51mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	패키지: -	재고3	MOSFET (Metal Oxide)	600 V	60A (Tc)	10V	5V @ 4mA	51 nC @ 10 V	3450 pF @ 25 V	±20V	-	625W (Tc)	51mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
IXFT78N60X3HV	IXYS	MOSFET ULTRA 600V 78A TO268HV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 78A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 780W (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 39A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268HV (IXFT) Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	패키지: -	Request a Quote	MOSFET (Metal Oxide)	600 V	78A (Tc)	10V	5V @ 4mA	70 nC @ 10 V	4700 pF @ 25 V	±20V	-	780W (Tc)	38mOhm @ 39A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268HV (IXFT)	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
IXTP48N20TM	IXYS	MOSFET N-CH 200V 48A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 24A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Isolated Tab Package / Case: TO-220-3 Full Pack, Isolated Tab	패키지: -	Request a Quote	MOSFET (Metal Oxide)	200 V	48A (Tc)	10V	4.5V @ 250µA	60 nC @ 10 V	3090 pF @ 25 V	±30V	-	250W (Tc)	50mOhm @ 24A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220 Isolated Tab	TO-220-3 Full Pack, Isolated Tab
IXFA36N20X3	IXYS	MOSFET N-CH 200V 36A TO263AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1425 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 176W (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AA (IXFA) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	패키지: -	재고555	MOSFET (Metal Oxide)	200 V	36A (Tc)	10V	4.5V @ 500µA	21 nC @ 10 V	1425 pF @ 25 V	±20V	-	176W (Tc)	45mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263AA (IXFA)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXTQ32P20T	IXYS	MOSFET P-CH 200V 32A TO3P FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	패키지: -	Request a Quote	MOSFET (Metal Oxide)	200 V	32A (Tc)	10V	4V @ 250µA	185 nC @ 10 V	14500 pF @ 25 V	±15V	-	300W (Tc)	130mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
IXTA02N250HV-TRL	IXYS	MOSFET N-CH 2500V 200MA TO263HV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 2500 V Current - Continuous Drain (Id) @ 25°C: 200mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 116 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 450Ohm @ 50mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263HV Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	패키지: -	Request a Quote	MOSFET (Metal Oxide)	2500 V	200mA (Tc)	10V	4.5V @ 250µA	7.4 nC @ 10 V	116 pF @ 25 V	±20V	-	83W (Tc)	450Ohm @ 50mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263HV	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXFT80N65X2HV	IXYS	MOSFET N-CH 650V 80A TO268HV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 890W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268HV (IXFT) Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	패키지: -	Request a Quote	MOSFET (Metal Oxide)	650 V	80A (Tc)	10V	5V @ 4mA	140 nC @ 10 V	8300 pF @ 25 V	±30V	-	890W (Tc)	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-268HV (IXFT)	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
IXFH34N65X3	IXYS	MOSFET 34A 650V X3 TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.2V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2025 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 446W (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXFH) Package / Case: TO-247-3	패키지: -	재고621	MOSFET (Metal Oxide)	650 V	34A (Tc)	10V	5.2V @ 2.5mA	29 nC @ 10 V	2025 pF @ 25 V	±20V	-	446W (Tc)	100mOhm @ 17A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXFH)	TO-247-3
IXFP130N15X3	IXYS	MOSFET N-CH 150V 130A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5230 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 390W (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 65A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	패키지: -	재고3	MOSFET (Metal Oxide)	150 V	130A (Tc)	10V	4.5V @ 1.5mA	80 nC @ 10 V	5230 pF @ 25 V	±20V	-	390W (Tc)	9mOhm @ 65A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
IXFN140N60X3	IXYS	DISCRETE MOSFET 140A 600V X3 SOT FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXFH76N15T2	IXYS	MOSFET N-CH 150V 76A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 76A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 350W (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 38A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	패키지: -	Request a Quote	MOSFET (Metal Oxide)	150 V	76A (Tc)	10V	4.5V @ 250µA	97 nC @ 10 V	5800 pF @ 25 V	±20V	-	350W (Tc)	22mOhm @ 38A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
IXFP50N20X3	IXYS	DISCMSFT NCHULTRJNCTX3CLASS TO-2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 240W (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 (IXFP) Package / Case: TO-220-3	패키지: -	Request a Quote	MOSFET (Metal Oxide)	200 V	50A (Tc)	10V	4.5V @ 1mA	33 nC @ 10 V	2100 pF @ 25 V	±20V	-	240W (Tc)	30mOhm @ 25A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3 (IXFP)	TO-220-3
IXTA30N25L2	IXYS	MOSFET N-CH 250V 30A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 355W (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	패키지: -	Request a Quote	MOSFET (Metal Oxide)	250 V	30A (Tc)	10V	4.5V @ 250µA	130 nC @ 10 V	3200 pF @ 25 V	±20V	-	355W (Tc)	140mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXTQ86N25T	IXYS	MOSFET N-CH 250V 86A TO3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 86A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5330 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 540W (Ta) Rds On (Max) @ Id, Vgs: 37mOhm @ 43A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	패키지: -	Request a Quote	MOSFET (Metal Oxide)	250 V	86A (Tc)	10V	5V @ 1mA	105 nC @ 10 V	5330 pF @ 25 V	±30V	-	540W (Ta)	37mOhm @ 43A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
IXFK110N65X3	IXYS	DISCRETE MOSFET 110A 650V X3 TO2 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXTX660N04T4	IXYS	DISC MSFT NCHTRENCHGATE-GEN4 TO- FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: PLUS247™-3 Package / Case: TO-247-3 Variant	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	PLUS247™-3	TO-247-3 Variant
IXTQ36N30P-PDP	IXYS	MOSFET N-CH 300V 36A TO3P FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-