페이지 3 - IXYS 제품 - 트랜지스터 - FET, MOSFET - 단일

IXTY1R6N50D2-TRL

IXYS

MOSFET N-CH 500V 1.6A TO252AA

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tj)
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V
Vgs (Max): ±20V
FET Feature: Depletion Mode
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 800mA, 0V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

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MOSFET (Metal Oxide)

500 V

1.6A (Tj)

0V

4.5V @ 250µA

23.7 nC @ 5 V

645 pF @ 25 V

±20V

Depletion Mode

100W (Tc)

2.3Ohm @ 800mA, 0V

-55°C ~ 150°C (TJ)

Surface Mount

TO-252AA

TO-252-3, DPAK (2 Leads + Tab), SC-63

IXFH180N20X3

IXYS

MOSFET N-CH 200V 180A TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 780W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 90A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247 (IXTH)
Package / Case: TO-247-3

패키지: -

재고1,659

MOSFET (Metal Oxide)

200 V

180A (Tc)

10V

4.5V @ 4mA

154 nC @ 10 V

10300 pF @ 25 V

±20V

-

780W (Tc)

7.5mOhm @ 90A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-247 (IXTH)

TO-247-3

IXFA44N25X3

IXYS

MOSFET N-CH 250V 44A TO263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250 V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 240W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 22A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2PAK)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

패키지: -

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MOSFET (Metal Oxide)

250 V

44A (Tc)

10V

4.5V @ 1mA

33 nC @ 10 V

2200 pF @ 25 V

±20V

-

240W (Tc)

40mOhm @ 22A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-263 (D2PAK)

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IXFN32N120

IXYS

MOSFET N-CH 1200V 32A SOT-227B

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 32A
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15900 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 350mOhm @ 500mA, 10V
Operating Temperature: -
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227B
Package / Case: SOT-227-4, miniBLOC

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MOSFET (Metal Oxide)

1200 V

32A

-

5V @ 8mA

400 nC @ 10 V

15900 pF @ 25 V

-

350mOhm @ 500mA, 10V

-

Chassis Mount

SOT-227B

SOT-227-4, miniBLOC

IXFB70N100X

IXYS

MOSFET N-CH 1000V 70A PLUS264

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000 V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 6V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9160 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 1785W (Tc)
Rds On (Max) @ Id, Vgs: 89mOhm @ 35A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PLUS264™
Package / Case: TO-264-3, TO-264AA

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MOSFET (Metal Oxide)

1000 V

70A (Tc)

10V

6V @ 8mA

350 nC @ 10 V

9160 pF @ 25 V

±30V

-

1785W (Tc)

89mOhm @ 35A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PLUS264™

TO-264-3, TO-264AA

IXTA20N65X2

IXYS

MOSFET N-CH 650V 20A TO263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 290W (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2PAK)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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MOSFET (Metal Oxide)

650 V

20A (Tc)

10V

4.5V @ 250µA

27 nC @ 10 V

1450 pF @ 25 V

±30V

-

290W (Tc)

185mOhm @ 10A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-263 (D2PAK)

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IXFP22N65X2M

IXYS

MOSFET N-CH 650V 22A TO220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 37W (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 11A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220 Isolated Tab
Package / Case: TO-220-3 Full Pack, Isolated Tab

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MOSFET (Metal Oxide)

650 V

22A (Tc)

10V

5V @ 1.5mA

37 nC @ 10 V

2190 pF @ 25 V

±30V

-

37W (Tc)

145mOhm @ 11A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220 Isolated Tab

TO-220-3 Full Pack, Isolated Tab

IXFP14N55X2

IXYS

IXFP14N55X2

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

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-

IXFH1605

IXYS

MOSFET N-CH 16A TO247

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

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-

IXTS01N90P-223

IXYS

MOSFET N-CH SMD

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

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-

IXFH1826

IXYS

MOSFET N-CH 18A TO247

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

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-

IXFH1988

IXYS

MOSFET N-CH 19A TO247

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

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-

IXTQ88N28T

IXYS

MOSFET N-CH TO3P

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

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-

IXTA220N04T2

IXYS

MOSFET N-CH 40V 220A TO-263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6820 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263AA
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

패키지: -

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MOSFET (Metal Oxide)

40 V

220A (Tc)

-

4V @ 250µA

112 nC @ 10 V

6820 pF @ 25 V

-

360W (Tc)

3.5mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

TO-263AA

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IXFP36N20X3M

IXYS

MOSFET N-CH 200V 36A TO220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1425 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 18A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220 Isolated Tab
Package / Case: TO-220-3 Full Pack, Isolated Tab

패키지: -

재고603

MOSFET (Metal Oxide)

200 V

36A (Tc)

10V

4.5V @ 500µA

21 nC @ 10 V

1425 pF @ 25 V

±20V

-

36W (Tc)

45mOhm @ 18A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220 Isolated Tab

TO-220-3 Full Pack, Isolated Tab

IXTA08N100D2HV

IXYS

MOSFET N-CH 1000V 800MA TO263HV

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000 V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tj)
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs(th) (Max) @ Id: 4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V
Vgs (Max): ±20V
FET Feature: Depletion Mode
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 21Ohm @ 400mA, 0V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263HV
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

패키지: -

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MOSFET (Metal Oxide)

1000 V

800mA (Tj)

0V

4V @ 25µA

14.6 nC @ 5 V

325 pF @ 25 V

±20V

Depletion Mode

60W (Tc)

21Ohm @ 400mA, 0V

-55°C ~ 150°C (TJ)

Surface Mount

TO-263HV

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IXTA86N20X4

IXYS

MOSFET 200V 86A N-CH ULTRA TO263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 43A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2PAK)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

패키지: -

재고4,797

MOSFET (Metal Oxide)

200 V

86A (Tc)

10V

4.5V @ 250µA

70 nC @ 10 V

2250 pF @ 25 V

±20V

-

300W (Tc)

13mOhm @ 43A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

TO-263 (D2PAK)

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IXFT15N100Q3-TRL

IXYS

MOSFET N-CH 1000V 15A TO268

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000 V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 690W (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 7.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-268
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

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MOSFET (Metal Oxide)

1000 V

15A (Tc)

10V

6.5V @ 4mA

64 nC @ 10 V

3250 pF @ 25 V

±30V

-

690W (Tc)

1.05Ohm @ 7.5A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-268

TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

IXTH220N20X4

IXYS

MOSFET N-CH 200V 220A X4 TO-247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12300 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 800W (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 110A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: ISO TO-247-3
Package / Case: TO-247-3

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MOSFET (Metal Oxide)

200 V

220A (Tc)

10V

4.5V @ 250µA

157 nC @ 10 V

12300 pF @ 25 V

±20V

-

800W (Tc)

5.5mOhm @ 110A, 10V

-55°C ~ 175°C (TJ)

Through Hole

ISO TO-247-3

TO-247-3

IXTH58N25L2

IXYS

MOSFET N-CH 250V 58A TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250 V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 540W (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 29A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247 (IXTH)
Package / Case: TO-247-3

패키지: -

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MOSFET (Metal Oxide)

250 V

58A (Tc)

10V

4.5V @ 250µA

330 nC @ 10 V

9200 pF @ 25 V

±20V

-

540W (Tc)

64mOhm @ 29A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-247 (IXTH)

TO-247-3

IXFK98N60X3

IXYS

DISCRETE MOSFET 98A 600V X3 TO26

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

재고975

-

IXTY05N100

IXYS

MOSFET N-CH TO252AA

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

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-

IXFA34N65X2-TRL

IXYS

MOSFET N-CH 650V 34A TO263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 540W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2PAK)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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MOSFET (Metal Oxide)

650 V

34A (Tc)

10V

5V @ 2.5mA

56 nC @ 10 V

3230 pF @ 25 V

±30V

-

540W (Tc)

100mOhm @ 17A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-263 (D2PAK)

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IXTA1970

IXYS

MOSFET N-CH TO263

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

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-

IXFT100N30X3HV

IXYS

MOSFET N-CH 300V 100A TO268HV

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 300 V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7660 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 480W (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-268HV (IXFT)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

패키지: -

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MOSFET (Metal Oxide)

300 V

100A (Tc)

10V

4.5V @ 4mA

122 nC @ 10 V

7660 pF @ 25 V

±20V

-

480W (Tc)

13.5mOhm @ 50A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-268HV (IXFT)

TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

IXFA130N15X3

IXYS

MOSFET N-CH 150V 130A TO263AA

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5230 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 390W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 65A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263AA (IXFA)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

패키지: -

재고309

MOSFET (Metal Oxide)

150 V

130A (Tc)

10V

4.5V @ 1.5mA

80 nC @ 10 V

5230 pF @ 25 V

±20V

-

390W (Tc)

9mOhm @ 65A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-263AA (IXFA)

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

MCB60I1200TZ

IXYS

1200V 90A SIC POWER MOSFET

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs(th) (Max) @ Id: 4V @ 15mA
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 1000 V
Vgs (Max): +20V, -5V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-268AA (D3Pak-HV)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

패키지: -

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SiCFET (Silicon Carbide)

1200 V

90A (Tc)

20V

4V @ 15mA

160 nC @ 20 V

2790 pF @ 1000 V

+20V, -5V

-

34mOhm @ 50A, 20V

-40°C ~ 175°C (TJ)

Surface Mount

TO-268AA (D3Pak-HV)

TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

IXFY12N65X3

IXYS

DISCRETE MOSFET 12A 650V X3 TO25

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

Request a Quote

-

부품 번호	제조업체	설명	패키지	재고	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IXTY1R6N50D2-TRL	IXYS	MOSFET N-CH 500V 1.6A TO252AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 1.6A (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23.7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 2.3Ohm @ 800mA, 0V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	패키지: -	Request a Quote	MOSFET (Metal Oxide)	500 V	1.6A (Tj)	0V	4.5V @ 250µA	23.7 nC @ 5 V	645 pF @ 25 V	±20V	Depletion Mode	100W (Tc)	2.3Ohm @ 800mA, 0V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
IXFH180N20X3	IXYS	MOSFET N-CH 200V 180A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 780W (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 90A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	패키지: -	재고1,659	MOSFET (Metal Oxide)	200 V	180A (Tc)	10V	4.5V @ 4mA	154 nC @ 10 V	10300 pF @ 25 V	±20V	-	780W (Tc)	7.5mOhm @ 90A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
IXFA44N25X3	IXYS	MOSFET N-CH 250V 44A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 240W (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 22A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	패키지: -	Request a Quote	MOSFET (Metal Oxide)	250 V	44A (Tc)	10V	4.5V @ 1mA	33 nC @ 10 V	2200 pF @ 25 V	±20V	-	240W (Tc)	40mOhm @ 22A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXFN32N120	IXYS	MOSFET N-CH 1200V 32A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 32A Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15900 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 350mOhm @ 500mA, 10V Operating Temperature: - Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	패키지: -	Request a Quote	MOSFET (Metal Oxide)	1200 V	32A	-	5V @ 8mA	400 nC @ 10 V	15900 pF @ 25 V	-	-	-	350mOhm @ 500mA, 10V	-	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFB70N100X	IXYS	MOSFET N-CH 1000V 70A PLUS264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9160 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1785W (Tc) Rds On (Max) @ Id, Vgs: 89mOhm @ 35A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS264™ Package / Case: TO-264-3, TO-264AA	패키지: -	Request a Quote	MOSFET (Metal Oxide)	1000 V	70A (Tc)	10V	6V @ 8mA	350 nC @ 10 V	9160 pF @ 25 V	±30V	-	1785W (Tc)	89mOhm @ 35A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS264™	TO-264-3, TO-264AA
IXTA20N65X2	IXYS	MOSFET N-CH 650V 20A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 290W (Tc) Rds On (Max) @ Id, Vgs: 185mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	패키지: -	Request a Quote	MOSFET (Metal Oxide)	650 V	20A (Tc)	10V	4.5V @ 250µA	27 nC @ 10 V	1450 pF @ 25 V	±30V	-	290W (Tc)	185mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXFP22N65X2M	IXYS	MOSFET N-CH 650V 22A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 37W (Tc) Rds On (Max) @ Id, Vgs: 145mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Isolated Tab Package / Case: TO-220-3 Full Pack, Isolated Tab	패키지: -	Request a Quote	MOSFET (Metal Oxide)	650 V	22A (Tc)	10V	5V @ 1.5mA	37 nC @ 10 V	2190 pF @ 25 V	±30V	-	37W (Tc)	145mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220 Isolated Tab	TO-220-3 Full Pack, Isolated Tab
IXFP14N55X2	IXYS	IXFP14N55X2 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXFH1605	IXYS	MOSFET N-CH 16A TO247 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXTS01N90P-223	IXYS	MOSFET N-CH SMD FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXFH1826	IXYS	MOSFET N-CH 18A TO247 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXFH1988	IXYS	MOSFET N-CH 19A TO247 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXTQ88N28T	IXYS	MOSFET N-CH TO3P FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXTA220N04T2	IXYS	MOSFET N-CH 40V 220A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 220A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6820 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AA Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	패키지: -	Request a Quote	MOSFET (Metal Oxide)	40 V	220A (Tc)	-	4V @ 250µA	112 nC @ 10 V	6820 pF @ 25 V	-	-	360W (Tc)	3.5mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263AA	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXFP36N20X3M	IXYS	MOSFET N-CH 200V 36A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1425 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 36W (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Isolated Tab Package / Case: TO-220-3 Full Pack, Isolated Tab	패키지: -	재고603	MOSFET (Metal Oxide)	200 V	36A (Tc)	10V	4.5V @ 500µA	21 nC @ 10 V	1425 pF @ 25 V	±20V	-	36W (Tc)	45mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220 Isolated Tab	TO-220-3 Full Pack, Isolated Tab
IXTA08N100D2HV	IXYS	MOSFET N-CH 1000V 800MA TO263HV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 800mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: 4V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 21Ohm @ 400mA, 0V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263HV Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	패키지: -	Request a Quote	MOSFET (Metal Oxide)	1000 V	800mA (Tj)	0V	4V @ 25µA	14.6 nC @ 5 V	325 pF @ 25 V	±20V	Depletion Mode	60W (Tc)	21Ohm @ 400mA, 0V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263HV	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXTA86N20X4	IXYS	MOSFET 200V 86A N-CH ULTRA TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 86A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 43A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	패키지: -	재고4,797	MOSFET (Metal Oxide)	200 V	86A (Tc)	10V	4.5V @ 250µA	70 nC @ 10 V	2250 pF @ 25 V	±20V	-	300W (Tc)	13mOhm @ 43A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXFT15N100Q3-TRL	IXYS	MOSFET N-CH 1000V 15A TO268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 690W (Tc) Rds On (Max) @ Id, Vgs: 1.05Ohm @ 7.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	패키지: -	Request a Quote	MOSFET (Metal Oxide)	1000 V	15A (Tc)	10V	6.5V @ 4mA	64 nC @ 10 V	3250 pF @ 25 V	±30V	-	690W (Tc)	1.05Ohm @ 7.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
IXTH220N20X4	IXYS	MOSFET N-CH 200V 220A X4 TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 220A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12300 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 800W (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 110A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISO TO-247-3 Package / Case: TO-247-3	패키지: -	Request a Quote	MOSFET (Metal Oxide)	200 V	220A (Tc)	10V	4.5V @ 250µA	157 nC @ 10 V	12300 pF @ 25 V	±20V	-	800W (Tc)	5.5mOhm @ 110A, 10V	-55°C ~ 175°C (TJ)	Through Hole	ISO TO-247-3	TO-247-3
IXTH58N25L2	IXYS	MOSFET N-CH 250V 58A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 540W (Tc) Rds On (Max) @ Id, Vgs: 64mOhm @ 29A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	패키지: -	Request a Quote	MOSFET (Metal Oxide)	250 V	58A (Tc)	10V	4.5V @ 250µA	330 nC @ 10 V	9200 pF @ 25 V	±20V	-	540W (Tc)	64mOhm @ 29A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
IXFK98N60X3	IXYS	DISCRETE MOSFET 98A 600V X3 TO26 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	재고975	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXTY05N100	IXYS	MOSFET N-CH TO252AA FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXFA34N65X2-TRL	IXYS	MOSFET N-CH 650V 34A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 540W (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	패키지: -	Request a Quote	MOSFET (Metal Oxide)	650 V	34A (Tc)	10V	5V @ 2.5mA	56 nC @ 10 V	3230 pF @ 25 V	±30V	-	540W (Tc)	100mOhm @ 17A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXTA1970	IXYS	MOSFET N-CH TO263 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXFT100N30X3HV	IXYS	MOSFET N-CH 300V 100A TO268HV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7660 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 480W (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268HV (IXFT) Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	패키지: -	Request a Quote	MOSFET (Metal Oxide)	300 V	100A (Tc)	10V	4.5V @ 4mA	122 nC @ 10 V	7660 pF @ 25 V	±20V	-	480W (Tc)	13.5mOhm @ 50A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268HV (IXFT)	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
IXFA130N15X3	IXYS	MOSFET N-CH 150V 130A TO263AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5230 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 390W (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 65A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AA (IXFA) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	패키지: -	재고309	MOSFET (Metal Oxide)	150 V	130A (Tc)	10V	4.5V @ 1.5mA	80 nC @ 10 V	5230 pF @ 25 V	±20V	-	390W (Tc)	9mOhm @ 65A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263AA (IXFA)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
MCB60I1200TZ	IXYS	1200V 90A SIC POWER MOSFET FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 4V @ 15mA Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 1000 V Vgs (Max): +20V, -5V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268AA (D3Pak-HV) Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	패키지: -	Request a Quote	SiCFET (Silicon Carbide)	1200 V	90A (Tc)	20V	4V @ 15mA	160 nC @ 20 V	2790 pF @ 1000 V	+20V, -5V	-	-	34mOhm @ 50A, 20V	-40°C ~ 175°C (TJ)	Surface Mount	TO-268AA (D3Pak-HV)	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
IXFY12N65X3	IXYS	DISCRETE MOSFET 12A 650V X3 TO25 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-