페이지 75 - IXYS 제품 - 트랜지스터 - FET, MOSFET - 단일

IXFK44N80Q3

IXYS

MOSFET N-CH 800V 44A TO-264

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 6.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 9840pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 1250W (Tc)
Rds On (Max) @ Id, Vgs: 190 mOhm @ 22A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-264AA (IXFK)
Package / Case: TO-264-3, TO-264AA

패키지: TO-264-3, TO-264AA

재고4,128

MOSFET (Metal Oxide)

800V

44A (Tc)

10V

6.5V @ 8mA

185nC @ 10V

9840pF @ 25V

±30V

-

1250W (Tc)

190 mOhm @ 22A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-264AA (IXFK)

TO-264-3, TO-264AA

IXFL39N90

IXYS

MOSFET N-CH 900V 34A ISOPLUS264

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 375nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 13400pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 580W (Tc)
Rds On (Max) @ Id, Vgs: 220 mOhm @ 19.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: ISOPLUS264?
Package / Case: ISOPLUS264?

패키지: ISOPLUS264?

재고4,016

MOSFET (Metal Oxide)

900V

34A (Tc)

10V

5V @ 8mA

375nC @ 10V

13400pF @ 25V

±20V

-

580W (Tc)

220 mOhm @ 19.5A, 10V

-55°C ~ 150°C (TJ)

Through Hole

ISOPLUS264?

IXTK21N100

IXYS

MOSFET N-CH 1000V 21A TO-264

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 550 mOhm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-264 (IXTK)
Package / Case: TO-264-3, TO-264AA

패키지: TO-264-3, TO-264AA

재고4,608

MOSFET (Metal Oxide)

1000V

21A (Tc)

10V

4.5V @ 500µA

250nC @ 10V

8400pF @ 25V

±20V

-

500W (Tc)

550 mOhm @ 500mA, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-264 (IXTK)

TO-264-3, TO-264AA

IXFX44N80Q3

IXYS

MOSFET N-CH 800V 44A PLUS247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 6.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 9840pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 1250W (Tc)
Rds On (Max) @ Id, Vgs: 190 mOhm @ 22A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PLUS247?-3
Package / Case: TO-247-3

패키지: TO-247-3

재고4,864

MOSFET (Metal Oxide)

800V

44A (Tc)

10V

6.5V @ 8mA

185nC @ 10V

9840pF @ 25V

±30V

-

1250W (Tc)

190 mOhm @ 22A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PLUS247?-3

TO-247-3

IXFN73N30Q

IXYS

MOSFET N-CH 300V 73A SOT-227B

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 300V
Current - Continuous Drain (Id) @ 25°C: 73A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 45 mOhm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227B
Package / Case: SOT-227-4, miniBLOC

패키지: SOT-227-4, miniBLOC

재고2,800

MOSFET (Metal Oxide)

300V

73A

10V

4V @ 4mA

195nC @ 10V

5400pF @ 25V

±30V

-

500W (Tc)

45 mOhm @ 500mA, 10V

-55°C ~ 150°C (TJ)

Chassis Mount

SOT-227B

SOT-227-4, miniBLOC

IXTT75N10

IXYS

MOSFET N-CH 100V 75A TO-268

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 20 mOhm @ 37.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-268
Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

재고3,472

MOSFET (Metal Oxide)

100V

75A (Tc)

10V

4V @ 4mA

260nC @ 10V

4500pF @ 25V

±20V

-

300W (Tc)

20 mOhm @ 37.5A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-268

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXFR80N10Q

IXYS

MOSFET N-CH 100V 76A ISOPLUS247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 310W (Tc)
Rds On (Max) @ Id, Vgs: 15 mOhm @ 76A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: ISOPLUS247?
Package / Case: ISOPLUS247?

패키지: ISOPLUS247?

재고2,112

MOSFET (Metal Oxide)

100V

76A (Tc)

10V

-

180nC @ 10V

4500pF @ 25V

±20V

-

310W (Tc)

15 mOhm @ 76A, 10V

-55°C ~ 150°C (TJ)

Through Hole

ISOPLUS247?

IXFR38N80Q2

IXYS

MOSFET N-CH 800V 28A ISOPLUS247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 8340pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 416W (Tc)
Rds On (Max) @ Id, Vgs: 240 mOhm @ 19A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: ISOPLUS247?
Package / Case: ISOPLUS247?

패키지: ISOPLUS247?

재고5,792

MOSFET (Metal Oxide)

800V

28A (Tc)

10V

4.5V @ 8mA

190nC @ 10V

8340pF @ 25V

±30V

-

416W (Tc)

240 mOhm @ 19A, 10V

-55°C ~ 150°C (TJ)

Through Hole

ISOPLUS247?

IXTN200N10T

IXYS

MOSFET N-CH 100V 200A SOT-227

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 200A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 152nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 550W (Tc)
Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227B
Package / Case: SOT-227-4, miniBLOC

패키지: SOT-227-4, miniBLOC

재고4,608

MOSFET (Metal Oxide)

100V

200A

10V

4.5V @ 250µA

152nC @ 10V

9400pF @ 25V

±20V

-

550W (Tc)

5.5 mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Chassis Mount

SOT-227B

SOT-227-4, miniBLOC

IXFK30N110P

IXYS

MOSFET N-CH 1100V 30A TO-264

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1100V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 235nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 960W (Tc)
Rds On (Max) @ Id, Vgs: 360 mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-264AA (IXFK)
Package / Case: TO-264-3, TO-264AA

패키지: TO-264-3, TO-264AA

재고5,840

MOSFET (Metal Oxide)

1100V

30A (Tc)

10V

6.5V @ 1mA

235nC @ 10V

13600pF @ 25V

±30V

-

960W (Tc)

360 mOhm @ 15A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-264AA (IXFK)

TO-264-3, TO-264AA

IXFL60N60

IXYS

MOSFET N-CH 600V 60A ISOPLUS264

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 380nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 10000pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 700W (Tc)
Rds On (Max) @ Id, Vgs: 80 mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: ISOPLUS264?
Package / Case: ISOPLUS264?

패키지: ISOPLUS264?

재고6,624

MOSFET (Metal Oxide)

600V

60A (Tc)

10V

4V @ 8mA

380nC @ 10V

10000pF @ 25V

±20V

-

700W (Tc)

80 mOhm @ 30A, 10V

-55°C ~ 150°C (TJ)

Through Hole

ISOPLUS264?

MMIX1T600N04T2

IXYS

MOSFET N-CH 40V 600A SMPD

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 600A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 590nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 830W (Tc)
Rds On (Max) @ Id, Vgs: 1.3 mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SMPD
Package / Case: 24-PowerSMD, 21 Leads

패키지: 24-PowerSMD, 21 Leads

재고4,272

MOSFET (Metal Oxide)

40V

600A (Tc)

10V

3.5V @ 250µA

590nC @ 10V

40000pF @ 25V

±20V

-

830W (Tc)

1.3 mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

SMPD

24-PowerSMD, 21 Leads

IXFN21N100Q

IXYS

MOSFET N-CH 1000V 21A SOT-227B

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000V
Current - Continuous Drain (Id) @ 25°C: 21A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5900pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 520W (Tc)
Rds On (Max) @ Id, Vgs: 500 mOhm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227B
Package / Case: SOT-227-4, miniBLOC

패키지: SOT-227-4, miniBLOC

재고3,552

MOSFET (Metal Oxide)

1000V

21A

10V

5V @ 4mA

170nC @ 10V

5900pF @ 25V

±20V

-

520W (Tc)

500 mOhm @ 500mA, 10V

-55°C ~ 150°C (TJ)

Chassis Mount

SOT-227B

SOT-227-4, miniBLOC

IXFN32N100P

IXYS

MOSFET N-CH 1000V 27A SOT-227B

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000V
Current - Continuous Drain (Id) @ 25°C: 27A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 14200pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 690W (Tc)
Rds On (Max) @ Id, Vgs: 320 mOhm @ 16A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227B
Package / Case: SOT-227-4, miniBLOC

패키지: SOT-227-4, miniBLOC

재고2,608

MOSFET (Metal Oxide)

1000V

27A

10V

6.5V @ 1mA

225nC @ 10V

14200pF @ 25V

±30V

-

690W (Tc)

320 mOhm @ 16A, 10V

-55°C ~ 150°C (TJ)

Chassis Mount

SOT-227B

SOT-227-4, miniBLOC

IXFX38N80Q2

IXYS

MOSFET N-CH 800V 38A PLUS247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 8340pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 735W (Tc)
Rds On (Max) @ Id, Vgs: 220 mOhm @ 19A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PLUS247?-3
Package / Case: TO-247-3

패키지: TO-247-3

재고6,768

MOSFET (Metal Oxide)

800V

38A (Tc)

10V

4.5V @ 8mA

190nC @ 10V

8340pF @ 25V

±30V

-

735W (Tc)

220 mOhm @ 19A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PLUS247?-3

TO-247-3

IXFK38N80Q2

IXYS

MOSFET N-CH 800V 38A TO-264

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 8340pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 735W (Tc)
Rds On (Max) @ Id, Vgs: 220 mOhm @ 19A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-264AA (IXFK)
Package / Case: TO-264-3, TO-264AA

패키지: TO-264-3, TO-264AA

재고3,392

MOSFET (Metal Oxide)

800V

38A (Tc)

10V

4.5V @ 8mA

190nC @ 10V

8340pF @ 25V

±30V

-

735W (Tc)

220 mOhm @ 19A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-264AA (IXFK)

TO-264-3, TO-264AA

IXFR26N120P

IXYS

MOSFET N-CH 1200V 15A ISOPLUS247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 320W (Tc)
Rds On (Max) @ Id, Vgs: 500 mOhm @ 13A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: ISOPLUS247?
Package / Case: ISOPLUS247?

패키지: ISOPLUS247?

재고3,952

MOSFET (Metal Oxide)

1200V

15A (Tc)

10V

6.5V @ 1mA

225nC @ 10V

14000pF @ 25V

±30V

-

320W (Tc)

500 mOhm @ 13A, 10V

-55°C ~ 150°C (TJ)

Through Hole

ISOPLUS247?

IXFE55N50

IXYS

MOSFET N-CH 500V 47A SOT-227B

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 47A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 90 mOhm @ 27.5A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227B
Package / Case: SOT-227-4, miniBLOC

패키지: SOT-227-4, miniBLOC

재고5,408

MOSFET (Metal Oxide)

500V

47A

10V

4.5V @ 8mA

330nC @ 10V

9400pF @ 25V

±20V

-

500W (Tc)

90 mOhm @ 27.5A, 10V

-40°C ~ 150°C (TJ)

Chassis Mount

SOT-227B

SOT-227-4, miniBLOC

IXFX30N110P

IXYS

MOSFET N-CH 1100V 30A PLUS247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1100V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 235nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 960W (Tc)
Rds On (Max) @ Id, Vgs: 360 mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PLUS247?-3
Package / Case: TO-247-3

패키지: TO-247-3

재고6,384

MOSFET (Metal Oxide)

1100V

30A (Tc)

10V

6.5V @ 1mA

235nC @ 10V

13600pF @ 25V

±30V

-

960W (Tc)

360 mOhm @ 15A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PLUS247?-3

TO-247-3

IXFE44N60

IXYS

MOSFET N-CH 600V 41A SOT-227B

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 41A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 8900pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 130 mOhm @ 22A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227B
Package / Case: SOT-227-4, miniBLOC

패키지: SOT-227-4, miniBLOC

재고4,656

MOSFET (Metal Oxide)

600V

41A

10V

4.5V @ 8mA

330nC @ 10V

8900pF @ 25V

±20V

-

500W (Tc)

130 mOhm @ 22A, 10V

-55°C ~ 150°C (TJ)

Chassis Mount

SOT-227B

SOT-227-4, miniBLOC

IXKN40N60C

IXYS

MOSFET N-CH 600V 40A SOT-227B

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 40A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.9V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±20V
FET Feature: Super Junction
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 70 mOhm @ 500mA, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227B
Package / Case: SOT-227-4, miniBLOC

패키지: SOT-227-4, miniBLOC

재고6,160

MOSFET (Metal Oxide)

600V

40A

10V

3.9V @ 2.5mA

250nC @ 10V

-

±20V

Super Junction

-

70 mOhm @ 500mA, 10V

-40°C ~ 150°C (TJ)

Chassis Mount

SOT-227B

SOT-227-4, miniBLOC

IXFL44N60

IXYS

MOSFET N-CH 600V 41A ISOPLUS264

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 8900pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 130 mOhm @ 22A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: ISOPLUS264?
Package / Case: ISOPLUS264?

패키지: ISOPLUS264?

재고3,568

MOSFET (Metal Oxide)

600V

41A (Tc)

10V

4.5V @ 8mA

330nC @ 10V

8900pF @ 25V

±20V

-

500W (Tc)

130 mOhm @ 22A, 10V

-55°C ~ 150°C (TJ)

Through Hole

ISOPLUS264?

IXFR26N100P

IXYS

MOSFET N-CH 1000V 15A ISOPLUS247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 197nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 11900pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 290W (Tc)
Rds On (Max) @ Id, Vgs: 430 mOhm @ 13A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: ISOPLUS247?
Package / Case: ISOPLUS247?

패키지: ISOPLUS247?

재고6,368

MOSFET (Metal Oxide)

1000V

15A (Tc)

10V

6.5V @ 1mA

197nC @ 10V

11900pF @ 25V

±30V

-

290W (Tc)

430 mOhm @ 13A, 10V

-55°C ~ 150°C (TJ)

Through Hole

ISOPLUS247?

IXFE50N50

IXYS

MOSFET N-CH 500V 50A SOT-227B

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 50A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 100 mOhm @ 25A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227B
Package / Case: SOT-227-4, miniBLOC

패키지: SOT-227-4, miniBLOC

재고5,840

MOSFET (Metal Oxide)

500V

50A

10V

4.5V @ 8mA

330nC @ 10V

9400pF @ 25V

±20V

-

500W (Tc)

100 mOhm @ 25A, 10V

-40°C ~ 150°C (TJ)

Chassis Mount

SOT-227B

SOT-227-4, miniBLOC

IXTN90P20P

IXYS

MOSFET P-CH 200V 90A SOT227

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 90A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 205nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 890W (Tc)
Rds On (Max) @ Id, Vgs: 44 mOhm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227B
Package / Case: SOT-227-4, miniBLOC

패키지: SOT-227-4, miniBLOC

재고5,920

MOSFET (Metal Oxide)

200V

90A

10V

4V @ 1mA

205nC @ 10V

12000pF @ 25V

±20V

-

890W (Tc)

44 mOhm @ 500mA, 10V

-55°C ~ 150°C (TJ)

Chassis Mount

SOT-227B

SOT-227-4, miniBLOC

IXTN32P60P

IXYS

MOSFET P-CH 600V 32A SOT227

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 32A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 196nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 11100pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 890W (Tc)
Rds On (Max) @ Id, Vgs: 350 mOhm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227B
Package / Case: SOT-227-4, miniBLOC

패키지: SOT-227-4, miniBLOC

재고7,504

MOSFET (Metal Oxide)

600V

32A

10V

4V @ 1mA

196nC @ 10V

11100pF @ 25V

±20V

-

890W (Tc)

350 mOhm @ 500mA, 10V

-55°C ~ 150°C (TJ)

Chassis Mount

SOT-227B

SOT-227-4, miniBLOC

IXFN40N90P

IXYS

MOSFET N-CH 900V 33A SOT227

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 33A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 695W (Tc)
Rds On (Max) @ Id, Vgs: 210 mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227B
Package / Case: SOT-227-4, miniBLOC

패키지: SOT-227-4, miniBLOC

재고4,496

MOSFET (Metal Oxide)

900V

33A

10V

6.5V @ 1mA

230nC @ 10V

14000pF @ 25V

±30V

-

695W (Tc)

210 mOhm @ 20A, 10V

-55°C ~ 150°C (TJ)

Chassis Mount

SOT-227B

SOT-227-4, miniBLOC

IXFN280N07

IXYS

MOSFET N-CH 70V 280A SOT-227B

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 70V
Current - Continuous Drain (Id) @ 25°C: 280A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 420nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 600W (Tc)
Rds On (Max) @ Id, Vgs: 5 mOhm @ 120A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227B
Package / Case: SOT-227-4, miniBLOC

패키지: SOT-227-4, miniBLOC

재고5,648

MOSFET (Metal Oxide)

70V

280A

10V

4V @ 8mA

420nC @ 10V

9400pF @ 25V

±20V

-

600W (Tc)

5 mOhm @ 120A, 10V

-55°C ~ 150°C (TJ)

Chassis Mount

SOT-227B

SOT-227-4, miniBLOC