페이지 91 - IXYS 제품 - 트랜지스터 - FET, MOSFET - 단일 | Heisener Electronics
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IXYS 제품 - 트랜지스터 - FET, MOSFET - 단일

기록 2,558
페이지  91/92
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부품 번호
제조업체
설명
패키지
재고
수량
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IXFX32N48Q
IXYS

MOSFET N-CH PLUS247

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
재고3,520
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IXFX30N50
IXYS

MOSFET N-CH PLUS247

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
재고7,888
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IXFX20N80Q
IXYS

MOSFET N-CH PLUS247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 360W (Tc)
  • Rds On (Max) @ Id, Vgs: 420 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS247?-3
  • Package / Case: TO-247-3
패키지: TO-247-3
재고3,936
MOSFET (Metal Oxide)
800V
20A (Tc)
10V
4.5V @ 4mA
200nC @ 10V
5100pF @ 25V
±20V
-
360W (Tc)
420 mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PLUS247?-3
TO-247-3
IXFT74N20Q
IXYS

MOSFET N-CH TO268

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
재고4,496
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IXFR32N50
IXYS

MOSFET N-CH ISOPLUS247

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
재고6,608
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IXFR21N50Q
IXYS

MOSFET N-CH ISOPLUS247

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
재고2,384
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IXFR20N80Q
IXYS

MOSFET N-CH ISOPLUS247

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
재고5,040
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IXFR16N90Q
IXYS

MOSFET N-CH ISOPLUS247

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
재고3,392
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IXFR15N100Q
IXYS

MOSFET N-CH ISOPLUS247

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
재고6,064
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IXFK80N10Q
IXYS

MOSFET N-CH TO-264AA

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
재고7,072
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IXFK72N20
IXYS

MOSFET N-CH TO-264AA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5900pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 360W (Tc)
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 36A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264AA (IXFK)
  • Package / Case: TO-264-3, TO-264AA
패키지: TO-264-3, TO-264AA
재고2,640
MOSFET (Metal Oxide)
200V
72A (Tc)
10V
4V @ 4mA
280nC @ 10V
5900pF @ 25V
±20V
-
360W (Tc)
35 mOhm @ 36A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-264AA (IXFK)
TO-264-3, TO-264AA
IXFK14N100Q
IXYS

MOSFET N-CH TO-264AA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 360W (Tc)
  • Rds On (Max) @ Id, Vgs: 750 mOhm @ 7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264AA (IXFK)
  • Package / Case: TO-264-3, TO-264AA
패키지: TO-264-3, TO-264AA
재고5,504
MOSFET (Metal Oxide)
1000V
14A (Tc)
10V
5V @ 4mA
170nC @ 10V
4500pF @ 25V
±20V
-
360W (Tc)
750 mOhm @ 7A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-264AA (IXFK)
TO-264-3, TO-264AA
IXFJ80N20Q
IXYS

MOSFET N-CH TO-220

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
재고5,392
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IXFJ80N10Q
IXYS

MOSFET N-CH TO-220

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
재고7,488
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IXFJ52N30Q
IXYS

MOSFET N-CH TO-220

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
재고6,352
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IXFJ40N30Q
IXYS

MOSFET N-CH TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 80 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-268
  • Package / Case: TO-220-3, Short Tab
패키지: TO-220-3, Short Tab
재고3,328
MOSFET (Metal Oxide)
300V
40A (Tc)
10V
4V @ 4mA
200nC @ 10V
4800pF @ 25V
±20V
-
300W (Tc)
80 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-268
TO-220-3, Short Tab
IXFJ32N50
IXYS

MOSFET N-CH TO-220

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
재고7,168
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IXFJ15N100Q
IXYS

MOSFET N-CH TO-220

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
재고2,336
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IXFH67N10Q
IXYS

MOSFET N-CH TO-247AD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 33.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AD (IXFH)
  • Package / Case: TO-247-3
패키지: TO-247-3
재고2,592
MOSFET (Metal Oxide)
100V
67A (Tc)
10V
4V @ 4mA
260nC @ 10V
4500pF @ 25V
±20V
-
300W (Tc)
25 mOhm @ 33.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD (IXFH)
TO-247-3
IXFH35N30Q
IXYS

MOSFET N-CH TO-247AD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 17.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AD (IXFH)
  • Package / Case: TO-247-3
패키지: TO-247-3
재고2,496
MOSFET (Metal Oxide)
300V
35A (Tc)
10V
4V @ 4mA
200nC @ 10V
4800pF @ 25V
±20V
-
300W (Tc)
100 mOhm @ 17.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD (IXFH)
TO-247-3
IXFH32N48Q
IXYS

MOSFET N-CH TO-247AD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 480V
  • Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 360W (Tc)
  • Rds On (Max) @ Id, Vgs: 130 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AD (IXFH)
  • Package / Case: TO-247-3
패키지: TO-247-3
재고5,216
MOSFET (Metal Oxide)
480V
32A (Tc)
10V
4V @ 4mA
300nC @ 10V
5200pF @ 25V
±20V
-
360W (Tc)
130 mOhm @ 15A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD (IXFH)
TO-247-3
IXFH32N48
IXYS

MOSFET N-CH TO-247AD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 480V
  • Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 360W (Tc)
  • Rds On (Max) @ Id, Vgs: 130 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AD (IXFH)
  • Package / Case: TO-247-3
패키지: TO-247-3
재고2,960
MOSFET (Metal Oxide)
480V
32A (Tc)
10V
4V @ 4mA
300nC @ 10V
5200pF @ 25V
±20V
-
360W (Tc)
130 mOhm @ 15A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD (IXFH)
TO-247-3
IXFH1837
IXYS

MOSFET N-CH TO-247AD

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
재고4,224
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IXFH1799
IXYS

MOSFET N-CH TO-247AD

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
재고7,392
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
hot IXFH14N100Q
IXYS

MOSFET N-CH TO-247AD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 360W (Tc)
  • Rds On (Max) @ Id, Vgs: 750 mOhm @ 7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AD (IXFH)
  • Package / Case: TO-247-3
패키지: TO-247-3
재고5,824
MOSFET (Metal Oxide)
1000V
14A (Tc)
10V
5V @ 4mA
170nC @ 10V
4500pF @ 25V
±20V
-
360W (Tc)
750 mOhm @ 7A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD (IXFH)
TO-247-3
IXFD80N20Q-8XQ
IXYS

MOSFET N-CH

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: -
  • Supplier Device Package: Die
  • Package / Case: Die
패키지: Die
재고5,984
MOSFET (Metal Oxide)
200V
-
-
-
-
-
-
-
-
-
150°C (TJ)
-
Die
Die
IXFD80N10Q-8XQ
IXYS

MOSFET N-CH

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: -
  • Supplier Device Package: Die
  • Package / Case: Die
패키지: Die
재고3,136
MOSFET (Metal Oxide)
100V
-
-
-
-
-
-
-
-
-
150°C (TJ)
-
Die
Die
IXFD40N30Q-72
IXYS

MOSFET N-CH

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: Die
  • Package / Case: Die
패키지: Die
재고3,424
MOSFET (Metal Oxide)
300V
-
-
-
-
-
-
-
-
-
-
-
Die
Die