페이지 10 - Maxim Integrated 제품 - PMIC - 게이트 구동기 | Heisener Electronics
고객 문의
SalesDept@heisener.com +86-755-83210559 ext. 887
Language Translation

* Please refer to the English Version as our Official Version.

Maxim Integrated 제품 - PMIC - 게이트 구동기

기록 306
페이지  10/11
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Channel Type
Number of Drivers
Gate Type
Voltage - Supply
Logic Voltage - VIL, VIH
Current - Peak Output (Source, Sink)
Input Type
High Side Voltage - Max (Bootstrap)
Rise / Fall Time (Typ)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
MAX5062CASA-T
Maxim Integrated

IC MOSFET DRIVER 8-SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 8 V ~ 12.6 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 2A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 125V
  • Rise / Fall Time (Typ): 65ns, 65ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
재고2,464
Independent
2
N-Channel MOSFET
8 V ~ 12.6 V
-
2A, 2A
Non-Inverting
125V
65ns, 65ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
MAX5062CASA
Maxim Integrated

IC MOSFET DRIVER 8-SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 8 V ~ 12.6 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 2A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 125V
  • Rise / Fall Time (Typ): 65ns, 65ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
재고3,392
Independent
2
N-Channel MOSFET
8 V ~ 12.6 V
-
2A, 2A
Non-Inverting
125V
65ns, 65ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
MAX5062BASA-T
Maxim Integrated

IC MOSFET DRIVER 8-SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 8 V ~ 12.6 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 2A, 2A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): 125V
  • Rise / Fall Time (Typ): 65ns, 65ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고5,760
Independent
2
N-Channel MOSFET
8 V ~ 12.6 V
-
2A, 2A
Inverting, Non-Inverting
125V
65ns, 65ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
MAX5062BASA
Maxim Integrated

IC MOSFET DRIVER 8-SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 8 V ~ 12.6 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 2A, 2A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): 125V
  • Rise / Fall Time (Typ): 65ns, 65ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고5,056
Independent
2
N-Channel MOSFET
8 V ~ 12.6 V
-
2A, 2A
Inverting, Non-Inverting
125V
65ns, 65ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
MAX5062AASA-T
Maxim Integrated

IC DRIVER HALF BRDG HS 8-SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 8 V ~ 12.6 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 2A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 125V
  • Rise / Fall Time (Typ): 65ns, 65ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고2,576
Independent
2
N-Channel MOSFET
8 V ~ 12.6 V
-
2A, 2A
Non-Inverting
125V
65ns, 65ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot MAX5062AASA
Maxim Integrated

IC DRIVER HALF BRDG HS 8-SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 8 V ~ 12.6 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 2A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 125V
  • Rise / Fall Time (Typ): 65ns, 65ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고18,288
Independent
2
N-Channel MOSFET
8 V ~ 12.6 V
-
2A, 2A
Non-Inverting
125V
65ns, 65ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
MAX5057BASA-T
Maxim Integrated

IC MOSFET DRVR DUAL 8-SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4 V ~ 15 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.1V
  • Current - Peak Output (Source, Sink): 4A, 4A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 32ns, 26ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고3,264
Independent
2
N-Channel MOSFET
4 V ~ 15 V
0.8V, 2.1V
4A, 4A
Inverting, Non-Inverting
-
32ns, 26ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
MAX5057BASA
Maxim Integrated

IC MOSFET DRVR DUAL 8-SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4 V ~ 15 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.1V
  • Current - Peak Output (Source, Sink): 4A, 4A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 32ns, 26ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고3,072
Independent
2
N-Channel MOSFET
4 V ~ 15 V
0.8V, 2.1V
4A, 4A
Inverting, Non-Inverting
-
32ns, 26ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
MAX5057AASA-T
Maxim Integrated

IC MOSFET DRVR DUAL 8-SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4 V ~ 15 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.1V
  • Current - Peak Output (Source, Sink): 4A, 4A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 32ns, 26ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
재고2,100
Independent
2
N-Channel MOSFET
4 V ~ 15 V
0.8V, 2.1V
4A, 4A
Inverting, Non-Inverting
-
32ns, 26ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
MAX5057AASA
Maxim Integrated

IC MOSFET DRVR DUAL 8-SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4 V ~ 15 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.1V
  • Current - Peak Output (Source, Sink): 4A, 4A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 32ns, 26ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
재고4,096
Independent
2
N-Channel MOSFET
4 V ~ 15 V
0.8V, 2.1V
4A, 4A
Inverting, Non-Inverting
-
32ns, 26ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
MAX5056BASA-T
Maxim Integrated

IC MOSFET DRVR DUAL 8-SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4 V ~ 15 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.1V
  • Current - Peak Output (Source, Sink): 4A, 4A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 32ns, 26ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고2,928
Independent
2
N-Channel MOSFET
4 V ~ 15 V
0.8V, 2.1V
4A, 4A
Non-Inverting
-
32ns, 26ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
MAX5056BASA
Maxim Integrated

IC MOSFET DRVR DUAL 8-SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4 V ~ 15 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.1V
  • Current - Peak Output (Source, Sink): 4A, 4A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 32ns, 26ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고6,208
Independent
2
N-Channel MOSFET
4 V ~ 15 V
0.8V, 2.1V
4A, 4A
Non-Inverting
-
32ns, 26ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
MAX5056AASA-T
Maxim Integrated

IC MOSFET DVR 4A 20NS DUAL 8SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4 V ~ 15 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.1V
  • Current - Peak Output (Source, Sink): 4A, 4A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 32ns, 26ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
재고4,816
Independent
2
N-Channel MOSFET
4 V ~ 15 V
0.8V, 2.1V
4A, 4A
Non-Inverting
-
32ns, 26ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
MAX5056AASA
Maxim Integrated

IC MOSFET DRVR DUAL 8-SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4 V ~ 15 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.1V
  • Current - Peak Output (Source, Sink): 4A, 4A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 32ns, 26ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
재고2,832
Independent
2
N-Channel MOSFET
4 V ~ 15 V
0.8V, 2.1V
4A, 4A
Non-Inverting
-
32ns, 26ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
MAX5055BASA-T
Maxim Integrated

IC MOSFET DRVR DUAL 8-SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4 V ~ 15 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.1V
  • Current - Peak Output (Source, Sink): 4A, 4A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 32ns, 26ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고7,504
Independent
2
N-Channel MOSFET
4 V ~ 15 V
0.8V, 2.1V
4A, 4A
Inverting
-
32ns, 26ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot MAX5055BASA
Maxim Integrated

IC MOSFET DRVR DUAL 8-SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4 V ~ 15 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.1V
  • Current - Peak Output (Source, Sink): 4A, 4A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 32ns, 26ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고36,672
Independent
2
N-Channel MOSFET
4 V ~ 15 V
0.8V, 2.1V
4A, 4A
Inverting
-
32ns, 26ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
MAX5055AASA-T
Maxim Integrated

IC MOSFET DRVR DUAL 8-SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4 V ~ 15 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.1V
  • Current - Peak Output (Source, Sink): 4A, 4A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 32ns, 26ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
재고5,424
Independent
2
N-Channel MOSFET
4 V ~ 15 V
0.8V, 2.1V
4A, 4A
Inverting
-
32ns, 26ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
MAX5055AASA
Maxim Integrated

IC MOSFET DRVR DUAL 8-SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4 V ~ 15 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.1V
  • Current - Peak Output (Source, Sink): 4A, 4A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 32ns, 26ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
재고6,384
Independent
2
N-Channel MOSFET
4 V ~ 15 V
0.8V, 2.1V
4A, 4A
Inverting
-
32ns, 26ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
MAX5054BATA-T
Maxim Integrated

IC MOSFET DRVR DUAL 8-TDFN

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4 V ~ 15 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.1V
  • Current - Peak Output (Source, Sink): 4A, 4A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 32ns, 26ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-TDFN-EP (3x3)
패키지: 8-WDFN Exposed Pad
재고2,240
Independent
2
N-Channel MOSFET
4 V ~ 15 V
0.8V, 2.1V
4A, 4A
Inverting, Non-Inverting
-
32ns, 26ns
-40°C ~ 150°C (TJ)
Surface Mount
8-WDFN Exposed Pad
8-TDFN-EP (3x3)
MAX5054AATA-T
Maxim Integrated

IC MOSFET DRVR DUAL 8-TDFN

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4 V ~ 15 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 4A, 4A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 32ns, 26ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-TDFN-EP (3x3)
패키지: 8-WDFN Exposed Pad
재고3,648
Independent
2
N-Channel MOSFET
4 V ~ 15 V
-
4A, 4A
Inverting, Non-Inverting
-
32ns, 26ns
-40°C ~ 150°C (TJ)
Surface Mount
8-WDFN Exposed Pad
8-TDFN-EP (3x3)
MAX5048BAUT-T
Maxim Integrated

IC MOSFET DVR HIGH SPEED SOT23-6

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4 V ~ 12.6 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.4V
  • Current - Peak Output (Source, Sink): 1.3A, 7.6A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 82ns, 12.5ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-23-6
패키지: SOT-23-6
재고2,352
Single
1
N-Channel MOSFET
4 V ~ 12.6 V
0.8V, 2.4V
1.3A, 7.6A
Inverting, Non-Inverting
-
82ns, 12.5ns
-40°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-23-6
MAX5048BATT-T
Maxim Integrated

IC MOSFET DRIVER 6-TDFN

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4 V ~ 12.6 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.4V
  • Current - Peak Output (Source, Sink): 1.3A, 7.6A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 82ns, 12.5ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WDFN Exposed Pad
  • Supplier Device Package: 6-TDFN-EP (3x3)
패키지: 6-WDFN Exposed Pad
재고2,368
Single
1
N-Channel MOSFET
4 V ~ 12.6 V
0.8V, 2.4V
1.3A, 7.6A
Inverting, Non-Inverting
-
82ns, 12.5ns
-40°C ~ 150°C (TJ)
Surface Mount
6-WDFN Exposed Pad
6-TDFN-EP (3x3)
MAX5048AAUT-T
Maxim Integrated

IC MOSFET DRIVER HS SOT23-6

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4 V ~ 12.6 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 1.3A, 7.6A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 82ns, 12.5ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-23-6
패키지: SOT-23-6
재고6,656
Single
1
N-Channel MOSFET
4 V ~ 12.6 V
-
1.3A, 7.6A
Inverting, Non-Inverting
-
82ns, 12.5ns
-40°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-23-6
MAX5048AATT-T
Maxim Integrated

IC MOSFET DRIVER 6-TDFN

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4 V ~ 12.6 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 1.3A, 7.6A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 82ns, 12.5ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WDFN Exposed Pad
  • Supplier Device Package: 6-TDFN-EP (3x3)
패키지: 6-WDFN Exposed Pad
재고6,672
Single
1
N-Channel MOSFET
4 V ~ 12.6 V
-
1.3A, 7.6A
Inverting, Non-Inverting
-
82ns, 12.5ns
-40°C ~ 150°C (TJ)
Surface Mount
6-WDFN Exposed Pad
6-TDFN-EP (3x3)
MAX4429ESA-T
Maxim Integrated

IC MOSFET DRV SGL 6A HS 8-SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 18 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.4V
  • Current - Peak Output (Source, Sink): 6A, 6A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 25ns, 25ns
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고4,800
Single
1
N-Channel, P-Channel MOSFET
4.5 V ~ 18 V
0.8V, 2.4V
6A, 6A
Inverting
-
25ns, 25ns
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot MAX4429ESA
Maxim Integrated

IC MOSFET DRV SGL 6A HS 8-SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 18 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.4V
  • Current - Peak Output (Source, Sink): 6A, 6A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 25ns, 25ns
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고351,948
Single
1
N-Channel, P-Channel MOSFET
4.5 V ~ 18 V
0.8V, 2.4V
6A, 6A
Inverting
-
25ns, 25ns
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
MAX4427ESA-T
Maxim Integrated

IC DRIVER DUAL MOSFET 1.5A 8SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 18 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.4V
  • Current - Peak Output (Source, Sink): 1.5A, 1.5A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 20ns, 20ns
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고3,056
Independent
2
N-Channel, P-Channel MOSFET
4.5 V ~ 18 V
0.8V, 2.4V
1.5A, 1.5A
Non-Inverting
-
20ns, 20ns
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
MAX4420ESA-T
Maxim Integrated

IC DRIVER MOSFET 6A HS 8-SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 18 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.4V
  • Current - Peak Output (Source, Sink): 6A, 6A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 25ns, 25ns
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고7,872
Single
1
N-Channel, P-Channel MOSFET
4.5 V ~ 18 V
0.8V, 2.4V
6A, 6A
Non-Inverting
-
25ns, 25ns
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC