페이지 9 - Maxim Integrated 제품 - PMIC - 게이트 구동기 | Heisener Electronics
고객 문의
SalesDept@heisener.com +86-755-83210559 ext. 887
로그인/등록
Language Translation

* Please refer to the English Version as our Official Version.

BOM
카트 0

Maxim Integrated 제품 - PMIC - 게이트 구동기

기록 306
페이지  9/11
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Channel Type
Number of Drivers
Gate Type
Voltage - Supply
Logic Voltage - VIL, VIH
Current - Peak Output (Source, Sink)
Input Type
High Side Voltage - Max (Bootstrap)
Rise / Fall Time (Typ)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
MAX15070BEUT+T
Maxim Integrated

IC MOSFET DRIVER HNM LL SOT23-6

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 6 V ~ 14 V
  • Logic Voltage - VIL, VIH: 2V, 4.25V
  • Current - Peak Output (Source, Sink): 3A, 7A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 36ns, 17ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-23-6
패키지: SOT-23-6
재고2,464
Single
1
N-Channel MOSFET
6 V ~ 14 V
2V, 4.25V
3A, 7A
Inverting, Non-Inverting
-
36ns, 17ns
-40°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-23-6
MAX15070BAUT+T
Maxim Integrated

IC MOSFET DRIVER HNM LL SOT23-6

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 6 V ~ 14 V
  • Logic Voltage - VIL, VIH: 2V, 4.25V
  • Current - Peak Output (Source, Sink): 3A, 7A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 36ns, 17ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-23-6
패키지: SOT-23-6
재고3,200
Single
1
N-Channel MOSFET
6 V ~ 14 V
2V, 4.25V
3A, 7A
Inverting, Non-Inverting
-
36ns, 17ns
-40°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-23-6
MAX15070AEUT+T
Maxim Integrated

IC MOSFET DRIVER TTL SOT23-6

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4 V ~ 14 V
  • Logic Voltage - VIL, VIH: 0.8V, 2V
  • Current - Peak Output (Source, Sink): 3A, 7A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 25ns, 14ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-23-6
패키지: SOT-23-6
재고4,384
Single
1
N-Channel MOSFET
4 V ~ 14 V
0.8V, 2V
3A, 7A
Inverting, Non-Inverting
-
25ns, 14ns
-40°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-23-6
MAX5078BATT/V+T
Maxim Integrated

IC MOSFET DVR 4A 20NS 6-TDFN

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4 V ~ 15 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.1V
  • Current - Peak Output (Source, Sink): 4A, 4A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 32ns, 26ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WDFN Exposed Pad
  • Supplier Device Package: 6-TDFN-EP (3x3)
패키지: 6-WDFN Exposed Pad
재고2,048
Single
1
N-Channel MOSFET
4 V ~ 15 V
0.8V, 2.1V
4A, 4A
Inverting, Non-Inverting
-
32ns, 26ns
-40°C ~ 150°C (TJ)
Surface Mount
6-WDFN Exposed Pad
6-TDFN-EP (3x3)
MAX15012DASA+T
Maxim Integrated

IC HALF-BRIDGE MOSFET DVR 8-SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 8 V ~ 12.6 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 2A, 2A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): 175V
  • Rise / Fall Time (Typ): 65ns, 65ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
재고5,664
Independent
2
N-Channel MOSFET
8 V ~ 12.6 V
-
2A, 2A
Inverting, Non-Inverting
175V
65ns, 65ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
hot MAX4428CSA+T
Maxim Integrated

IC MOSFET DRVR INV/NONINV 8-SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 18 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.4V
  • Current - Peak Output (Source, Sink): 1.5A, 1.5A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 20ns, 20ns
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고4,880
Independent
2
N-Channel, P-Channel MOSFET
4.5 V ~ 18 V
0.8V, 2.4V
1.5A, 1.5A
Inverting, Non-Inverting
-
20ns, 20ns
0°C ~ 70°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
MAX4429CSA+T
Maxim Integrated

IC MOSFET DRV SGL 6A HS 8-SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 18 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.4V
  • Current - Peak Output (Source, Sink): 6A, 6A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 25ns, 25ns
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고4,848
Single
1
N-Channel, P-Channel MOSFET
4.5 V ~ 18 V
0.8V, 2.4V
6A, 6A
Inverting
-
25ns, 25ns
0°C ~ 70°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot MAX4426ESA+T
Maxim Integrated

IC MOSFET DRVR DUAL INV 8-SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 18 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.4V
  • Current - Peak Output (Source, Sink): 1.5A, 1.5A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 20ns, 20ns
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고207,852
Independent
2
N-Channel, P-Channel MOSFET
4.5 V ~ 18 V
0.8V, 2.4V
1.5A, 1.5A
Inverting
-
20ns, 20ns
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
MAX4429ESA+T
Maxim Integrated

IC MOSFET DRV SGL 6A HS 8-SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 18 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.4V
  • Current - Peak Output (Source, Sink): 6A, 6A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 25ns, 25ns
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고5,760
Single
1
N-Channel, P-Channel MOSFET
4.5 V ~ 18 V
0.8V, 2.4V
6A, 6A
Inverting
-
25ns, 25ns
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
MAX15018AASA+T
Maxim Integrated

IC MOSF DRVR HALF BRDG HS 8-SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 8 V ~ 12.6 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 3A, 3A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 125V
  • Rise / Fall Time (Typ): 50ns, 40ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
재고3,728
Independent
2
N-Channel MOSFET
8 V ~ 12.6 V
-
3A, 3A
Non-Inverting
125V
50ns, 40ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
MAX15025EATB+T
Maxim Integrated

IC GATE DRVR 2CH 16NS 10TDFN

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 28 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 2A, 4A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 48ns, 32ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 10-WFDFN Exposed Pad
  • Supplier Device Package: 10-TDFN-EP (3x3)
패키지: 10-WFDFN Exposed Pad
재고5,376
Independent
2
N-Channel MOSFET
4.5 V ~ 28 V
-
2A, 4A
Inverting, Non-Inverting
-
48ns, 32ns
-40°C ~ 150°C (TJ)
Surface Mount
10-WFDFN Exposed Pad
10-TDFN-EP (3x3)
MAX15025DATB+T
Maxim Integrated

IC GATE DRVR 2CH 16NS 10TDFN

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 6.5 V ~ 28 V
  • Logic Voltage - VIL, VIH: 2V, 4.25V
  • Current - Peak Output (Source, Sink): 2A, 4A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 48ns, 32ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 10-WFDFN Exposed Pad
  • Supplier Device Package: 10-TDFN-EP (3x3)
패키지: 10-WFDFN Exposed Pad
재고7,104
Independent
2
N-Channel MOSFET
6.5 V ~ 28 V
2V, 4.25V
2A, 4A
Inverting, Non-Inverting
-
48ns, 32ns
-40°C ~ 150°C (TJ)
Surface Mount
10-WFDFN Exposed Pad
10-TDFN-EP (3x3)
MAX15025FATB+T
Maxim Integrated

IC GATE DRVR 2CH 16NS 10TDFN

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 6.5 V ~ 28 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 2A, 4A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 48ns, 32ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 10-WFDFN Exposed Pad
  • Supplier Device Package: 10-TDFN-EP (3x3)
패키지: 10-WFDFN Exposed Pad
재고3,472
Independent
2
N-Channel MOSFET
6.5 V ~ 28 V
-
2A, 4A
Inverting, Non-Inverting
-
48ns, 32ns
-40°C ~ 150°C (TJ)
Surface Mount
10-WFDFN Exposed Pad
10-TDFN-EP (3x3)
MAX15025HATB+T
Maxim Integrated

IC GATE DRVR 2CH 16NS 10TDFN

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 6.5 V ~ 28 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 2A, 4A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 48ns, 32ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 10-WFDFN Exposed Pad
  • Supplier Device Package: 10-TDFN-EP (3x3)
패키지: 10-WFDFN Exposed Pad
재고3,472
Independent
2
N-Channel MOSFET
6.5 V ~ 28 V
-
2A, 4A
Inverting, Non-Inverting
-
48ns, 32ns
-40°C ~ 150°C (TJ)
Surface Mount
10-WFDFN Exposed Pad
10-TDFN-EP (3x3)
MAX15025GATB+T
Maxim Integrated

IC GATE DRVR 2CH 16NS 10TDFN

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 28 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 2A, 4A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 48ns, 32ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 10-WFDFN Exposed Pad
  • Supplier Device Package: 10-TDFN-EP (3x3)
패키지: 10-WFDFN Exposed Pad
재고3,824
Independent
2
N-Channel MOSFET
4.5 V ~ 28 V
-
2A, 4A
Inverting, Non-Inverting
-
48ns, 32ns
-40°C ~ 150°C (TJ)
Surface Mount
10-WFDFN Exposed Pad
10-TDFN-EP (3x3)
MAX15025CATB+T
Maxim Integrated

IC GATE DRVR 2CH 16NS 10TDFN

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 28 V
  • Logic Voltage - VIL, VIH: 0.8V, 2V
  • Current - Peak Output (Source, Sink): 2A, 4A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 42ns, 30ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 10-WFDFN Exposed Pad
  • Supplier Device Package: 10-TDFN-EP (3x3)
패키지: 10-WFDFN Exposed Pad
재고3,696
Independent
2
N-Channel MOSFET
4.5 V ~ 28 V
0.8V, 2V
2A, 4A
Inverting, Non-Inverting
-
42ns, 30ns
-40°C ~ 150°C (TJ)
Surface Mount
10-WFDFN Exposed Pad
10-TDFN-EP (3x3)
MAX15025BATB+T
Maxim Integrated

IC GATE DRVR 2CH 16NS 10TDFN

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 6.5 V ~ 28 V
  • Logic Voltage - VIL, VIH: 2V, 4.25V
  • Current - Peak Output (Source, Sink): 2A, 4A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 48ns, 32ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 10-WFDFN Exposed Pad
  • Supplier Device Package: 10-TDFN-EP (3x3)
패키지: 10-WFDFN Exposed Pad
재고3,680
Independent
2
N-Channel MOSFET
6.5 V ~ 28 V
2V, 4.25V
2A, 4A
Inverting, Non-Inverting
-
48ns, 32ns
-40°C ~ 150°C (TJ)
Surface Mount
10-WFDFN Exposed Pad
10-TDFN-EP (3x3)
MAX15024BATB+T
Maxim Integrated

IC GATE DRVR 1CH 16NS 10TDFN

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 6.5 V ~ 28 V
  • Logic Voltage - VIL, VIH: 2V, 4.25V
  • Current - Peak Output (Source, Sink): 4A, 8A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 24ns, 16ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 10-WFDFN Exposed Pad
  • Supplier Device Package: 10-TDFN-EP (3x3)
패키지: 10-WFDFN Exposed Pad
재고5,632
Single
1
N-Channel MOSFET
6.5 V ~ 28 V
2V, 4.25V
4A, 8A
Inverting, Non-Inverting
-
24ns, 16ns
-40°C ~ 150°C (TJ)
Surface Mount
10-WFDFN Exposed Pad
10-TDFN-EP (3x3)
MAX15024CATB+T
Maxim Integrated

IC GATE DRVR 1CH 16NS 10TDFN

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 28 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 4A, 8A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 24ns, 16ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 10-WFDFN Exposed Pad
  • Supplier Device Package: 10-TDFN-EP (3x3)
패키지: 10-WFDFN Exposed Pad
재고3,648
Single
1
N-Channel MOSFET
4.5 V ~ 28 V
-
4A, 8A
Inverting, Non-Inverting
-
24ns, 16ns
-40°C ~ 150°C (TJ)
Surface Mount
10-WFDFN Exposed Pad
10-TDFN-EP (3x3)
MAX15024DATB+T
Maxim Integrated

IC GATE DRVR 1CH 16NS 10TDFN

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 6.5 V ~ 28 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 4A, 8A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 24ns, 16ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 10-WFDFN Exposed Pad
  • Supplier Device Package: 10-TDFN-EP (3x3)
패키지: 10-WFDFN Exposed Pad
재고7,984
Single
1
N-Channel MOSFET
6.5 V ~ 28 V
-
4A, 8A
Inverting, Non-Inverting
-
24ns, 16ns
-40°C ~ 150°C (TJ)
Surface Mount
10-WFDFN Exposed Pad
10-TDFN-EP (3x3)
MAX5075AAUA
Maxim Integrated

IC DRVR FET P-P 8-UMAX

  • Driven Configuration: Low-Side
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 15 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 3A, 3A
  • Input Type: RC Input Circuit
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 10ns, 10ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
  • Supplier Device Package: 8-uMax-EP
패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
재고6,848
Synchronous
2
N-Channel MOSFET
4.5 V ~ 15 V
-
3A, 3A
RC Input Circuit
-
10ns, 10ns
-40°C ~ 150°C (TJ)
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
8-uMax-EP
MAX5063DASA+T
Maxim Integrated

IC MOSFET DRIVER 8-SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 8 V ~ 12.6 V
  • Logic Voltage - VIL, VIH: 0.8V, 2V
  • Current - Peak Output (Source, Sink): 2A, 2A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): 125V
  • Rise / Fall Time (Typ): 65ns, 65ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
재고4,288
Independent
2
N-Channel MOSFET
8 V ~ 12.6 V
0.8V, 2V
2A, 2A
Inverting, Non-Inverting
125V
65ns, 65ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
MAX5062BASA+T
Maxim Integrated

IC MOSFET DRIVER 8-SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 8 V ~ 12.6 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 2A, 2A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): 125V
  • Rise / Fall Time (Typ): 65ns, 65ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고4,624
Independent
2
N-Channel MOSFET
8 V ~ 12.6 V
-
2A, 2A
Inverting, Non-Inverting
125V
65ns, 65ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
MAX5057AASA+T
Maxim Integrated

IC MOSFET DRVR DUAL 8-SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4 V ~ 15 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.1V
  • Current - Peak Output (Source, Sink): 4A, 4A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 32ns, 26ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
재고6,208
Independent
2
N-Channel MOSFET
4 V ~ 15 V
0.8V, 2.1V
4A, 4A
Inverting, Non-Inverting
-
32ns, 26ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
MAX5062CASA+T
Maxim Integrated

IC MOSFET DRIVER 8-SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 8 V ~ 12.6 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 2A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 125V
  • Rise / Fall Time (Typ): 65ns, 65ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
재고6,784
Independent
2
N-Channel MOSFET
8 V ~ 12.6 V
-
2A, 2A
Non-Inverting
125V
65ns, 65ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
MAX5062DASA+T
Maxim Integrated

IC MOSFET DRIVER 8-SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 8 V ~ 12.6 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 2A, 2A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): 125V
  • Rise / Fall Time (Typ): 65ns, 65ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
재고3,712
Independent
2
N-Channel MOSFET
8 V ~ 12.6 V
-
2A, 2A
Inverting, Non-Inverting
125V
65ns, 65ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
MAX5064AATC+T
Maxim Integrated

IC MOSFET DRIVER 12-TQFN

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 8 V ~ 12.6 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 2A, 2A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): 125V
  • Rise / Fall Time (Typ): 65ns, 65ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 12-WQFN Exposed Pad
  • Supplier Device Package: 12-TQFN (4x4)
패키지: 12-WQFN Exposed Pad
재고7,872
Independent
2
N-Channel MOSFET
8 V ~ 12.6 V
-
2A, 2A
Inverting, Non-Inverting
125V
65ns, 65ns
-40°C ~ 150°C (TJ)
Surface Mount
12-WQFN Exposed Pad
12-TQFN (4x4)
hot MAX626ESA+T
Maxim Integrated

IC DRIVER MOSFET DUAL 8-SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 18 V
  • Logic Voltage - VIL, VIH: 0.8V, 2V
  • Current - Peak Output (Source, Sink): 2A, 2A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 25ns, 20ns
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고238,176
Independent
2
N-Channel, P-Channel MOSFET
4.5 V ~ 18 V
0.8V, 2V
2A, 2A
Inverting
-
25ns, 20ns
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC