페이지 4 - Microchip Technology 제품 - 트랜지스터 - FET, MOSFET - 단일 | Heisener Electronics
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Microchip Technology 제품 - 트랜지스터 - FET, MOSFET - 단일

기록 441
페이지  4/16
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Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
APT8015JVFR
Microchip Technology

MOSFET N-CH 800V 44A ISOTOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 17650 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 150mOhm @ 500mA, 10V
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP®
  • Package / Case: SOT-227-4, miniBLOC
패키지: -
Request a Quote
MOSFET (Metal Oxide)
800 V
44A (Tc)
-
4V @ 5mA
285 nC @ 10 V
17650 pF @ 25 V
-
-
-
150mOhm @ 500mA, 10V
-
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC
APT34M60S
Microchip Technology

MOSFET N-CH 600V 36A D3PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6640 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 624W (Tc)
  • Rds On (Max) @ Id, Vgs: 190mOhm @ 17A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D3PAK
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
패키지: -
재고138
MOSFET (Metal Oxide)
600 V
36A (Tc)
10V
5V @ 1mA
165 nC @ 10 V
6640 pF @ 25 V
±30V
-
624W (Tc)
190mOhm @ 17A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D3PAK
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
APT20M18B2VFRG
Microchip Technology

MOSFET N-CH 200V 100A T-MAX

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 9880 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 18mOhm @ 50A, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: T-MAX™ [B2]
  • Package / Case: TO-247-3 Variant
패키지: -
Request a Quote
MOSFET (Metal Oxide)
200 V
100A (Tc)
-
4V @ 2.5mA
330 nC @ 10 V
9880 pF @ 25 V
-
-
-
18mOhm @ 50A, 10V
-
Through Hole
T-MAX™ [B2]
TO-247-3 Variant
APT10M11LVRG
Microchip Technology

MOSFET N-CH 100V 100A TO264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 450 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 520W (Tc)
  • Rds On (Max) @ Id, Vgs: 11mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 (L)
  • Package / Case: TO-264-3, TO-264AA
패키지: -
재고72
MOSFET (Metal Oxide)
100 V
100A (Tc)
10V
4V @ 2.5mA
450 nC @ 10 V
10300 pF @ 25 V
±30V
-
520W (Tc)
11mOhm @ 50A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-264 (L)
TO-264-3, TO-264AA
MSC100SM70JCU3
Microchip Technology

SICFET N-CH 700V 124A SOT227

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 700 V
  • Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 2.4V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 700 V
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 365W (Tc)
  • Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227 (ISOTOP®)
  • Package / Case: SOT-227-4, miniBLOC
패키지: -
Request a Quote
SiCFET (Silicon Carbide)
700 V
124A (Tc)
20V
2.4V @ 4mA
215 nC @ 20 V
4500 pF @ 700 V
+25V, -10V
-
365W (Tc)
19mOhm @ 40A, 20V
-55°C ~ 150°C (TJ)
Chassis Mount
SOT-227 (ISOTOP®)
SOT-227-4, miniBLOC
MSC100SM70JCU2
Microchip Technology

SICFET N-CH 700V 124A SOT227

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 700 V
  • Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 2.4V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 700 V
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 365W (Tc)
  • Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227 (ISOTOP®)
  • Package / Case: SOT-227-4, miniBLOC
패키지: -
재고33
SiCFET (Silicon Carbide)
700 V
124A (Tc)
20V
2.4V @ 4mA
215 nC @ 20 V
4500 pF @ 700 V
+25V, -10V
-
365W (Tc)
19mOhm @ 40A, 20V
-55°C ~ 150°C (TJ)
Chassis Mount
SOT-227 (ISOTOP®)
SOT-227-4, miniBLOC
APT12067LFLLG
Microchip Technology

MOSFET N-CH 1200V 18A TO264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 670mOhm @ 9A, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 [L]
  • Package / Case: TO-264-3, TO-264AA
패키지: -
Request a Quote
MOSFET (Metal Oxide)
1200 V
18A (Tc)
-
5V @ 2.5mA
150 nC @ 10 V
4420 pF @ 25 V
-
-
-
670mOhm @ 9A, 10V
-
Through Hole
TO-264 [L]
TO-264-3, TO-264AA
APT20M18LVFRG
Microchip Technology

MOSFET N-CH 200V 100A TO264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 9880 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 18mOhm @ 50A, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 [L]
  • Package / Case: TO-264-3, TO-264AA
패키지: -
Request a Quote
MOSFET (Metal Oxide)
200 V
100A (Tc)
-
4V @ 2.5mA
330 nC @ 10 V
9880 pF @ 25 V
-
-
-
18mOhm @ 50A, 10V
-
Through Hole
TO-264 [L]
TO-264-3, TO-264AA
APT6013JFLL
Microchip Technology

MOSFET N-CH 600V 39A ISOTOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5630 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 130mOhm @ 19.5A, 10V
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP®
  • Package / Case: SOT-227-4, miniBLOC
패키지: -
Request a Quote
MOSFET (Metal Oxide)
600 V
39A (Tc)
-
5V @ 2.5mA
130 nC @ 10 V
5630 pF @ 25 V
-
-
-
130mOhm @ 19.5A, 10V
-
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC
APT10026L2LLG
Microchip Technology

MOSFET N-CH 1000V 38A 264 MAX

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000 V
  • Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 267 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7114 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 260mOhm @ 19A, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: 264 MAX™ [L2]
  • Package / Case: TO-264-3, TO-264AA
패키지: -
Request a Quote
MOSFET (Metal Oxide)
1000 V
38A (Tc)
-
5V @ 5mA
267 nC @ 10 V
7114 pF @ 25 V
-
-
-
260mOhm @ 19A, 10V
-
Through Hole
264 MAX™ [L2]
TO-264-3, TO-264AA
APT20M34SLLG-TR
Microchip Technology

MOSFET N-CH 200V 74A D3PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 403W (Tc)
  • Rds On (Max) @ Id, Vgs: 34mOhm @ 37A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D3PAK
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
패키지: -
Request a Quote
MOSFET (Metal Oxide)
200 V
74A (Tc)
10V
5V @ 1mA
60 nC @ 10 V
3660 pF @ 25 V
±30V
-
403W (Tc)
34mOhm @ 37A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D3PAK
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
APT10045JFLL
Microchip Technology

MOSFET N-CH 1000V 21A ISOTOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000 V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 460mOhm @ 11.5A, 10V
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP®
  • Package / Case: SOT-227-4, miniBLOC
패키지: -
Request a Quote
MOSFET (Metal Oxide)
1000 V
21A (Tc)
-
5V @ 2.5mA
154 nC @ 10 V
4350 pF @ 25 V
-
-
-
460mOhm @ 11.5A, 10V
-
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC
APT6029BFLLG
Microchip Technology

MOSFET N-CH 600V 21A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2615 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 290mOhm @ 10.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 [B]
  • Package / Case: TO-247-3
패키지: -
Request a Quote
MOSFET (Metal Oxide)
600 V
21A (Tc)
-
5V @ 1mA
65 nC @ 10 V
2615 pF @ 25 V
-
-
300W (Tc)
290mOhm @ 10.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247 [B]
TO-247-3
MSC025SMA120S
Microchip Technology

SICFET N-CH 1.2KV 100A D3PAK

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D3PAK
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
패키지: -
재고396
SiCFET (Silicon Carbide)
1200 V
89A (Tc)
-
-
-
-
-
-
-
-
-55°C ~ 175°C (TJ)
Surface Mount
D3PAK
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
MSC025SMA120B
Microchip Technology

SICFET N-CH 1.2KV 103A TO247-3

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 103A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 1000 V
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 500W (Tc)
  • Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
패키지: -
재고432
SiCFET (Silicon Carbide)
1200 V
103A (Tc)
20V
2.8V @ 1mA
232 nC @ 20 V
3020 pF @ 1000 V
+25V, -10V
-
500W (Tc)
31mOhm @ 40A, 20V
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
MSC025SMA120J
Microchip Technology

SICFET N-CH 1.2KV 77A SOT227

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 1000 V
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 278W (Tc)
  • Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227 (ISOTOP®)
  • Package / Case: SOT-227-4, miniBLOC
패키지: -
Request a Quote
SiCFET (Silicon Carbide)
1200 V
77A (Tc)
20V
2.8V @ 1mA
232 nC @ 20 V
3020 pF @ 1000 V
+25V, -10V
-
278W (Tc)
31mOhm @ 40A, 20V
-55°C ~ 175°C (TJ)
Chassis Mount
SOT-227 (ISOTOP®)
SOT-227-4, miniBLOC
APT1201R4BLLG
Microchip Technology

MOSFET N-CH 1200V 9A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
패키지: -
Request a Quote
MOSFET (Metal Oxide)
1200 V
9A (Tc)
10V
5V @ 1mA
120 nC @ 10 V
2500 pF @ 25 V
±30V
-
300W (Tc)
1.4Ohm @ 4.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
TP5335MF-G-VAO
Microchip Technology

MOSFET, P-CHANNEL ENHANCEMENT-MO

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 350 V
  • Current - Continuous Drain (Id) @ 25°C: 85mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 360mW (Ta)
  • Rds On (Max) @ Id, Vgs: 30Ohm @ 200mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-DFN (2x2)
  • Package / Case: 6-VDFN Exposed Pad
패키지: -
Request a Quote
MOSFET (Metal Oxide)
350 V
85mA (Tj)
4.5V, 10V
2.4V @ 1mA
-
110 pF @ 25 V
±20V
-
360mW (Ta)
30Ohm @ 200mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
6-DFN (2x2)
6-VDFN Exposed Pad
TN2130K1-G-VAO
Microchip Technology

MOSFET N-CH 300V 85MA SOT23-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300 V
  • Current - Continuous Drain (Id) @ 25°C: 85mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V
  • Vgs(th) (Max) @ Id: 2.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 360mW (Ta)
  • Rds On (Max) @ Id, Vgs: 25Ohm @ 120mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TA)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
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MOSFET (Metal Oxide)
300 V
85mA (Tj)
4.5V
2.4V @ 1mA
-
50 pF @ 25 V
±20V
-
360mW (Ta)
25Ohm @ 120mA, 4.5V
-55°C ~ 150°C (TA)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
APT10045LFLLG
Microchip Technology

MOSFET N-CH 1000V 23A TO264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000 V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 460mOhm @ 11.5A, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 [L]
  • Package / Case: TO-264-3, TO-264AA
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MOSFET (Metal Oxide)
1000 V
23A (Tc)
-
5V @ 2.5mA
154 nC @ 10 V
4350 pF @ 25 V
-
-
-
460mOhm @ 11.5A, 10V
-
Through Hole
TO-264 [L]
TO-264-3, TO-264AA
APT5018BFLLG
Microchip Technology

MOSFET N-CH 500V 27A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2596 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 180mOhm @ 13.5A, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 [B]
  • Package / Case: TO-247-3
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MOSFET (Metal Oxide)
500 V
27A (Tc)
-
5V @ 1mA
58 nC @ 10 V
2596 pF @ 25 V
-
-
-
180mOhm @ 13.5A, 10V
-
Through Hole
TO-247 [B]
TO-247-3
APT10045LLLG
Microchip Technology

MOSFET N-CH 1000V 23A TO264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000 V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 450mOhm @ 11.5A, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 [L]
  • Package / Case: TO-264-3, TO-264AA
패키지: -
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MOSFET (Metal Oxide)
1000 V
23A (Tc)
-
5V @ 2.5mA
154 nC @ 10 V
4350 pF @ 25 V
-
-
-
450mOhm @ 11.5A, 10V
-
Through Hole
TO-264 [L]
TO-264-3, TO-264AA
APT1201R5BVFRG
Microchip Technology

MOSFET N-CH 1200V 10A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4440 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 1.5Ohm @ 5A, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 [B]
  • Package / Case: TO-247-3
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MOSFET (Metal Oxide)
1200 V
10A (Tc)
10V
4V @ 1mA
285 nC @ 10 V
4440 pF @ 25 V
-
-
-
1.5Ohm @ 5A, 10V
-
Through Hole
TO-247 [B]
TO-247-3
MSC750SMA170SA
Microchip Technology

MOSFET SIC 1700 V 750 MOHM D2PAK

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1700 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 3.25V @ 100µA (Typ)
  • Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 184 pF @ 1000 V
  • Vgs (Max): +23V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 63W (Tc)
  • Rds On (Max) @ Id, Vgs: 940mOhm @ 2.5A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK-7
  • Package / Case: TO-263-8, DPak (7 Leads + Tab)
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SiCFET (Silicon Carbide)
1700 V
6A (Tc)
20V
3.25V @ 100µA (Typ)
11 nC @ 20 V
184 pF @ 1000 V
+23V, -10V
-
63W (Tc)
940mOhm @ 2.5A, 20V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK-7
TO-263-8, DPak (7 Leads + Tab)
MSC750SMA170B4
Microchip Technology

TRANS SJT 1700V TO247-4

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1700 V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 3.25V @ 100µA (Typ)
  • Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 184 pF @ 1360 V
  • Vgs (Max): +23V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 68W (Tc)
  • Rds On (Max) @ Id, Vgs: 940mOhm @ 2.5A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4
  • Package / Case: TO-247-4
패키지: -
재고177
SiCFET (Silicon Carbide)
1700 V
7A (Tc)
20V
3.25V @ 100µA (Typ)
11 nC @ 20 V
184 pF @ 1360 V
+23V, -10V
-
68W (Tc)
940mOhm @ 2.5A, 20V
-55°C ~ 175°C (TJ)
Through Hole
TO-247-4
TO-247-4
MSC015SMA070B4
Microchip Technology

TRANS SJT N-CH 700V 140A TO247-4

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 700 V
  • Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 2.4V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 700 V
  • Vgs (Max): +23V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 455W (Tc)
  • Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4
  • Package / Case: TO-247-4
패키지: -
재고69
SiCFET (Silicon Carbide)
700 V
140A (Tc)
20V
2.4V @ 4mA
215 nC @ 20 V
4500 pF @ 700 V
+23V, -10V
-
455W (Tc)
19mOhm @ 40A, 20V
-55°C ~ 175°C (TJ)
Through Hole
TO-247-4
TO-247-4
APT8030JVFR
Microchip Technology

MOSFET N-CH 800V 25A ISOTOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 510 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 10V
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP®
  • Package / Case: SOT-227-4, miniBLOC
패키지: -
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MOSFET (Metal Oxide)
800 V
25A (Tc)
-
4V @ 2.5mA
510 nC @ 10 V
7900 pF @ 25 V
-
-
-
300mOhm @ 500mA, 10V
-
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC
APT20M11JFLL
Microchip Technology

MOSFET N-CH 200V 176A ISOTOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 176A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 10320 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 11mOhm @ 88A, 10V
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP®
  • Package / Case: SOT-227-4, miniBLOC
패키지: -
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MOSFET (Metal Oxide)
200 V
176A (Tc)
-
5V @ 5mA
180 nC @ 10 V
10320 pF @ 25 V
-
-
-
11mOhm @ 88A, 10V
-
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC