페이지 5 - Microchip Technology 제품 - 트랜지스터 - FET, MOSFET - 단일 | Heisener Electronics
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Microchip Technology 제품 - 트랜지스터 - FET, MOSFET - 단일

기록 441
페이지  5/16
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재고
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Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
APT50M38JFLL
Microchip Technology

MOSFET N-CH 500V 88A ISOTOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 38mOhm @ 44A, 10V
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP®
  • Package / Case: SOT-227-4, miniBLOC
패키지: -
Request a Quote
MOSFET (Metal Oxide)
500 V
88A (Tc)
-
5V @ 5mA
270 nC @ 10 V
12000 pF @ 25 V
-
-
-
38mOhm @ 44A, 10V
-
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC
APT6030BVRG
Microchip Technology

MOSFET N-CH 600V 21A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 300mOhm @ 10.5A, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 [B]
  • Package / Case: TO-247-3
패키지: -
Request a Quote
MOSFET (Metal Oxide)
600 V
21A (Tc)
-
4V @ 1mA
150 nC @ 10 V
3750 pF @ 25 V
-
-
-
300mOhm @ 10.5A, 10V
-
Through Hole
TO-247 [B]
TO-247-3
APT30M61SLLG-TR
Microchip Technology

MOSFET N-CH 300V 54A D3PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300 V
  • Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3720 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 403W (Tc)
  • Rds On (Max) @ Id, Vgs: 61mOhm @ 27A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D3PAK
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
패키지: -
Request a Quote
MOSFET (Metal Oxide)
300 V
54A (Tc)
10V
5V @ 1mA
64 nC @ 10 V
3720 pF @ 25 V
±30V
-
403W (Tc)
61mOhm @ 27A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D3PAK
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
MSC015SMA070B
Microchip Technology

SICFET N-CH 700V 131A TO247-3

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 700 V
  • Current - Continuous Drain (Id) @ 25°C: 131A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 2.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 700 V
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 400W (Tc)
  • Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
패키지: -
재고1,299
SiCFET (Silicon Carbide)
700 V
131A (Tc)
20V
2.4V @ 1mA
215 nC @ 20 V
4500 pF @ 700 V
+25V, -10V
-
400W (Tc)
19mOhm @ 40A, 20V
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
MSC015SMA070S
Microchip Technology

SICFET N-CH 700V 126A D3PAK

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 700 V
  • Current - Continuous Drain (Id) @ 25°C: 126A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 2.4V @ 4mA (Typ)
  • Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 700 V
  • Vgs (Max): +23V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 370W (Tc)
  • Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D3PAK
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
패키지: -
Request a Quote
SiCFET (Silicon Carbide)
700 V
126A (Tc)
20V
2.4V @ 4mA (Typ)
215 nC @ 20 V
4500 pF @ 700 V
+23V, -10V
-
370W (Tc)
19mOhm @ 40A, 20V
-55°C ~ 175°C (TJ)
Surface Mount
D3PAK
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
MSC015SMA070J
Microchip Technology

MOSFET SIC 700 V 15 MOHM SOT-227

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 700 V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227 (ISOTOP®)
  • Package / Case: SOT-227-4, miniBLOC
패키지: -
Request a Quote
SiCFET (Silicon Carbide)
700 V
-
-
-
-
-
-
-
-
-
-
Chassis Mount
SOT-227 (ISOTOP®)
SOT-227-4, miniBLOC
APT20M11JLL
Microchip Technology

MOSFET N-CH 200V 176A ISOTOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 176A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 10320 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 11mOhm @ 88A, 10V
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP®
  • Package / Case: SOT-227-4, miniBLOC
패키지: -
Request a Quote
MOSFET (Metal Oxide)
200 V
176A (Tc)
-
5V @ 5mA
180 nC @ 10 V
10320 pF @ 25 V
-
-
-
11mOhm @ 88A, 10V
-
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC
APT5017SVRG
Microchip Technology

MOSFET N-CH 500V 30A D3PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5280 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 170mOhm @ 500mA, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: D3PAK
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
패키지: -
Request a Quote
MOSFET (Metal Oxide)
500 V
30A (Tc)
-
4V @ 1mA
300 nC @ 10 V
5280 pF @ 25 V
-
-
-
170mOhm @ 500mA, 10V
-
Surface Mount
D3PAK
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
APT1001R6BFLLG
Microchip Technology

MOSFET N-CH 1000V 8A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000 V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 266W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.6Ohm @ 4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 [B]
  • Package / Case: TO-247-3
패키지: -
Request a Quote
MOSFET (Metal Oxide)
1000 V
8A (Tc)
10V
5V @ 1mA
55 nC @ 10 V
1320 pF @ 25 V
±30V
-
266W (Tc)
1.6Ohm @ 4A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247 [B]
TO-247-3
APT34F60S
Microchip Technology

MOSFET N-CH 600V 36A D3PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6640 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 624W (Tc)
  • Rds On (Max) @ Id, Vgs: 190mOhm @ 17A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D3PAK
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
패키지: -
재고273
MOSFET (Metal Oxide)
600 V
36A (Tc)
10V
5V @ 1mA
165 nC @ 10 V
6640 pF @ 25 V
±30V
-
624W (Tc)
190mOhm @ 17A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D3PAK
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
APT6015LVRG
Microchip Technology

MOSFET N-CH 600V 38A TO264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 475 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 150mOhm @ 500mA, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 [L]
  • Package / Case: TO-264-3, TO-264AA
패키지: -
Request a Quote
MOSFET (Metal Oxide)
600 V
38A (Tc)
-
4V @ 2.5mA
475 nC @ 10 V
9000 pF @ 25 V
-
-
-
150mOhm @ 500mA, 10V
-
Through Hole
TO-264 [L]
TO-264-3, TO-264AA
APT8043BLLG
Microchip Technology

MOSFET N-CH 800V 20A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 [B]
  • Package / Case: TO-247-3
패키지: -
Request a Quote
MOSFET (Metal Oxide)
800 V
20A (Tc)
-
5V @ 1mA
85 nC @ 10 V
2500 pF @ 25 V
-
-
-
430mOhm @ 5A, 10V
-
Through Hole
TO-247 [B]
TO-247-3
APT20M45SVRG
Microchip Technology

MOSFET N-CH 200V 56A D3PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4860 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 500mA, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: D3PAK
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
패키지: -
Request a Quote
MOSFET (Metal Oxide)
200 V
56A (Tc)
-
4V @ 1mA
195 nC @ 10 V
4860 pF @ 25 V
-
-
-
45mOhm @ 500mA, 10V
-
Surface Mount
D3PAK
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
APT34F60S-TR
Microchip Technology

MOSFET N-CH 600V 36A D3PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6640 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 624W (Tc)
  • Rds On (Max) @ Id, Vgs: 190mOhm @ 17A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D3PAK
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
패키지: -
Request a Quote
MOSFET (Metal Oxide)
600 V
36A (Tc)
10V
5V @ 1mA
165 nC @ 10 V
6640 pF @ 25 V
±30V
-
624W (Tc)
190mOhm @ 17A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D3PAK
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
APT8056BVRG
Microchip Technology

MOSFET N-CH 800V 16A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4440 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 560mOhm @ 500mA, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 [B]
  • Package / Case: TO-247-3
패키지: -
Request a Quote
MOSFET (Metal Oxide)
800 V
16A (Tc)
-
4V @ 1mA
275 nC @ 10 V
4440 pF @ 25 V
-
-
-
560mOhm @ 500mA, 10V
-
Through Hole
TO-247 [B]
TO-247-3
APT1001RSVRG
Microchip Technology

MOSFET N-CH 1000V 11A D3PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000 V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 1Ohm @ 500mA, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: D3PAK
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
패키지: -
Request a Quote
MOSFET (Metal Oxide)
1000 V
11A (Tc)
-
4V @ 1mA
225 nC @ 10 V
3660 pF @ 25 V
-
-
-
1Ohm @ 500mA, 10V
-
Surface Mount
D3PAK
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
MSC400SMA330B4
Microchip Technology

MOSFET SIC 3300 V 400 MOHM TO-24

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 3300 V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 2.97V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 579 pF @ 2400 V
  • Vgs (Max): +23V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 131W (Tc)
  • Rds On (Max) @ Id, Vgs: 520mOhm @ 5A, 20V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4
  • Package / Case: TO-247-4
패키지: -
재고885
SiCFET (Silicon Carbide)
3300 V
11A (Tc)
20V
2.97V @ 1mA
37 nC @ 20 V
579 pF @ 2400 V
+23V, -10V
-
131W (Tc)
520mOhm @ 5A, 20V
-55°C ~ 150°C (TJ)
Through Hole
TO-247-4
TO-247-4
APT10086BVRG
Microchip Technology

MOSFET N-CH 1000V 13A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000 V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4440 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 860mOhm @ 500mA, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 [B]
  • Package / Case: TO-247-3
패키지: -
Request a Quote
MOSFET (Metal Oxide)
1000 V
13A (Tc)
-
4V @ 1mA
275 nC @ 10 V
4440 pF @ 25 V
-
-
-
860mOhm @ 500mA, 10V
-
Through Hole
TO-247 [B]
TO-247-3
MSC017SMA120S
Microchip Technology

MOSFET SIC 1200V 17 MOHM TO-268

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 2.7V @ 4.5mA (Typ)
  • Gate Charge (Qg) (Max) @ Vgs: 249 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5280 pF @ 1000 V
  • Vgs (Max): +22V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 357W (Tc)
  • Rds On (Max) @ Id, Vgs: 22mOhm @ 40A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D3PAK
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
패키지: -
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SiCFET (Silicon Carbide)
1200 V
100A (Tc)
20V
2.7V @ 4.5mA (Typ)
249 nC @ 20 V
5280 pF @ 1000 V
+22V, -10V
-
357W (Tc)
22mOhm @ 40A, 20V
-55°C ~ 175°C (TJ)
Surface Mount
D3PAK
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
MSC017SMA120B
Microchip Technology

MOSFET SIC 1200V 17 MOHM TO-247

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 113A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 2.7V @ 4.5mA (Typ)
  • Gate Charge (Qg) (Max) @ Vgs: 249 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5280 pF @ 1000 V
  • Vgs (Max): +22V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 455W (Tc)
  • Rds On (Max) @ Id, Vgs: 22mOhm @ 40A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
패키지: -
재고6
SiCFET (Silicon Carbide)
1200 V
113A (Tc)
20V
2.7V @ 4.5mA (Typ)
249 nC @ 20 V
5280 pF @ 1000 V
+22V, -10V
-
455W (Tc)
22mOhm @ 40A, 20V
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
MSC017SMA120J
Microchip Technology

MOSFET SIC 1200V 17 MOHM SOT-227

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 2.7V @ 4.5mA (Typ)
  • Gate Charge (Qg) (Max) @ Vgs: 249 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5280 pF @ 1000 V
  • Vgs (Max): +23V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 278W (Tc)
  • Rds On (Max) @ Id, Vgs: 22mOhm @ 40A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: -
  • Supplier Device Package: SOT-227
  • Package / Case: -
패키지: -
재고30
SiCFET (Silicon Carbide)
1200 V
88A (Tc)
20V
2.7V @ 4.5mA (Typ)
249 nC @ 20 V
5280 pF @ 1000 V
+23V, -10V
-
278W (Tc)
22mOhm @ 40A, 20V
-55°C ~ 175°C (TJ)
-
SOT-227
-
APT10M07JVFR
Microchip Technology

MOSFET N-CH 100V 225A ISOTOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 1050 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 21600 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 7mOhm @ 500mA, 10V
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP®
  • Package / Case: SOT-227-4, miniBLOC
패키지: -
Request a Quote
MOSFET (Metal Oxide)
100 V
225A (Tc)
-
4V @ 5mA
1050 nC @ 10 V
21600 pF @ 25 V
-
-
-
7mOhm @ 500mA, 10V
-
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC
APT50M50L2LLG
Microchip Technology

MOSFET N-CH 500V 89A 264 MAX

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 10550 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 44.5A, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: 264 MAX™ [L2]
  • Package / Case: TO-264-3, TO-264AA
패키지: -
Request a Quote
MOSFET (Metal Oxide)
500 V
89A (Tc)
-
5V @ 5mA
200 nC @ 10 V
10550 pF @ 25 V
-
-
-
50mOhm @ 44.5A, 10V
-
Through Hole
264 MAX™ [L2]
TO-264-3, TO-264AA
APT8014L2LLG
Microchip Technology

MOSFET N-CH 800V 52A 264 MAX

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7238 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 140mOhm @ 26A, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: 264 MAX™ [L2]
  • Package / Case: TO-264-3, TO-264AA
패키지: -
Request a Quote
MOSFET (Metal Oxide)
800 V
52A (Tc)
-
5V @ 5mA
285 nC @ 10 V
7238 pF @ 25 V
-
-
-
140mOhm @ 26A, 10V
-
Through Hole
264 MAX™ [L2]
TO-264-3, TO-264AA
APT10M11JVFR
Microchip Technology

MOSFET N-CH 100V 144A ISOTOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 144A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 450 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 10380 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 11mOhm @ 500mA, 10V
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP®
  • Package / Case: SOT-227-4, miniBLOC
패키지: -
Request a Quote
MOSFET (Metal Oxide)
100 V
144A (Tc)
-
4V @ 2.5mA
450 nC @ 10 V
10380 pF @ 25 V
-
-
-
11mOhm @ 500mA, 10V
-
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC
MSC180SMA120SA
Microchip Technology

MOSFET SIC 1200 V 180 MOHM TO-26

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 3.26V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 1000 V
  • Vgs (Max): +23V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 225mOhm @ 8A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK-7
  • Package / Case: TO-263-8, DPak (7 Leads + Tab)
패키지: -
Request a Quote
SiCFET (Silicon Carbide)
1200 V
21A (Tc)
20V
3.26V @ 500µA
34 nC @ 20 V
510 pF @ 1000 V
+23V, -10V
-
125W (Tc)
225mOhm @ 8A, 20V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK-7
TO-263-8, DPak (7 Leads + Tab)
MSC180SMA120S
Microchip Technology

MOSFET SIC 1200 V 180 MOHM TO-26

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 3.26V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 1000 V
  • Vgs (Max): +23V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 225mOhm @ 8A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D3PAK
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
패키지: -
재고543
SiCFET (Silicon Carbide)
1200 V
21A (Tc)
20V
3.26V @ 500µA
34 nC @ 20 V
510 pF @ 1000 V
+23V, -10V
-
125W (Tc)
225mOhm @ 8A, 20V
-55°C ~ 175°C (TJ)
Surface Mount
D3PAK
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
MSC180SMA120B
Microchip Technology

MOSFET 1200V 25A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 20V
  • Vgs(th) (Max) @ Id: 4.5V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 1000 V
  • Vgs (Max): +23V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 147W (Tc)
  • Rds On (Max) @ Id, Vgs: 225mOhm @ 8A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
패키지: -
재고3
MOSFET (Metal Oxide)
1200 V
21A (Tc)
5V, 20V
4.5V @ 500µA
36 nC @ 20 V
530 pF @ 1000 V
+23V, -10V
-
147W (Tc)
225mOhm @ 8A, 20V
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3