페이지 87 - Micron Technology Inc. 제품 - 메모리

부품 번호	제조업체	설명	패키지	재고	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MT29F4G16ABAFAH4-AIT:F	Micron Technology Inc.	IC FLASH SLC 4G 256MX16 FBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 4Gb (256M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 63-VFBGA Supplier Device Package: 63-VFBGA (9x11)	패키지: 63-VFBGA	재고5,376	FLASH	FLASH - NAND (SLC)	4Gb (256M x 16)	Parallel	-	-	-	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	63-VFBGA	63-VFBGA (9x11)
MT29F4G01ABBFD12-AAT:F TR	Micron Technology Inc.	IC FLASH NAND 4G SLC TBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 4Gb (4G x 1) Memory Interface: SPI Clock Frequency: 83MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7V ~ 1.95V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-T-PBGA (6x8)	패키지: 24-TBGA	재고7,200	FLASH	FLASH - NAND (SLC)	4Gb (4G x 1)	SPI	83MHz	-	-	1.7V ~ 1.95V	-40°C ~ 105°C (TA)	Surface Mount	24-TBGA	24-T-PBGA (6x8)
MT29F4G01ABAFD12-AAT:F TR	Micron Technology Inc.	IC FLASH 4G SPI TBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 4Gb (4G x 1) Memory Interface: SPI Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-T-PBGA (6x8)	패키지: 24-TBGA	재고6,864	FLASH	FLASH - NAND	4Gb (4G x 1)	SPI	-	-	-	2.7V ~ 3.6V	-40°C ~ 105°C (TC)	Surface Mount	24-TBGA	24-T-PBGA (6x8)
MT29F4G08ABBFAH4-AITES:F TR	Micron Technology Inc.	IC FLASH NAND 4G PAR 63VFBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,144	-	-	-	-	-	-	-	-	-	-	-	-
MT29F4G08ABAFAH4-AIT:F TR	Micron Technology Inc.	IC FLASH 4G PARALLEL 63VFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 63-VFBGA Supplier Device Package: 63-VFBGA (9x11)	패키지: 63-VFBGA	재고3,152	FLASH	FLASH - NAND	4Gb (512M x 8)	Parallel	-	-	-	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	63-VFBGA	63-VFBGA (9x11)
MT29F4G16ABAFAH4-AIT:F TR	Micron Technology Inc.	IC FLASH SLC 4G 256MX16 FBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 4Gb (256M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 63-VFBGA Supplier Device Package: 63-VFBGA (9x11)	패키지: 63-VFBGA	재고3,584	FLASH	FLASH - NAND (SLC)	4Gb (256M x 16)	Parallel	-	-	-	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	63-VFBGA	63-VFBGA (9x11)
MT29F1G01ABBFD12-AAT:F TR	Micron Technology Inc.	IC FLASH 1G SPI TBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 1Gb (1G x 1) Memory Interface: SPI Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7V ~ 1.95V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-T-PBGA (6x8)	패키지: 24-TBGA	재고5,632	FLASH	FLASH - NAND	1Gb (1G x 1)	SPI	-	-	-	1.7V ~ 1.95V	-40°C ~ 105°C (TA)	Surface Mount	24-TBGA	24-T-PBGA (6x8)
MT47H64M16NF-25E AIT:M TR	Micron Technology Inc.	IC SDRAM DDR2 1G 84FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 1Gb (64M x 16) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Access Time: 400ps Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 84-TFBGA Supplier Device Package: 84-FBGA (8x12.5)	패키지: 84-TFBGA	재고6,752	DRAM	SDRAM - DDR2	1Gb (64M x 16)	Parallel	400MHz	15ns	400ps	1.7V ~ 1.9V	-40°C ~ 85°C (TA)	Surface Mount	84-TFBGA	84-FBGA (8x12.5)
MT47H128M8SH-25E AIT:M TR	Micron Technology Inc.	IC SDRAM DDR2 1G 60FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 1Gb (128M x 8) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Access Time: 400ps Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-FBGA (8x10)	패키지: 60-TFBGA	재고3,344	DRAM	SDRAM - DDR2	1Gb (128M x 8)	Parallel	400MHz	15ns	400ps	1.7V ~ 1.9V	-40°C ~ 95°C (TC)	Surface Mount	60-TFBGA	60-FBGA (8x10)
MT47H128M8SH-25E:M TR	Micron Technology Inc.	IC SDRAM DDR2 1G 60FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 1Gb (128M x 8) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Access Time: 400ps Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: 0°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-FBGA (8x10)	패키지: 60-TFBGA	재고4,656	DRAM	SDRAM - DDR2	1Gb (128M x 8)	Parallel	400MHz	15ns	400ps	1.7V ~ 1.9V	0°C ~ 85°C (TC)	Surface Mount	60-TFBGA	60-FBGA (8x10)
MT29F4G01ABBFDM70A3WC1	Micron Technology Inc.	IC FLASH NAND 4G SLC Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고4,224	-	-	-	-	-	-	-	-	-	-	-	-
MT29F4G01ABAFDM70A3WC1	Micron Technology Inc.	IC FLASH SLC 4G NAND Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,592	-	-	-	-	-	-	-	-	-	-	-	-
MT29F4G08ABBFAM70A3WC1	Micron Technology Inc.	IC FLASH SLC 4G DIE 512MX8 Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7V ~ 1.95V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Wafer	패키지: Die	재고6,272	FLASH	FLASH - NAND (SLC)	4Gb (512M x 8)	Parallel	-	-	-	1.7V ~ 1.95V	0°C ~ 70°C (TA)	Surface Mount	Die	Wafer
MT25QU256ABA8E12-0AUT TR	Micron Technology Inc.	IC FLASH NOR SER 256M 24TPBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (32M x 8) Memory Interface: SPI Clock Frequency: 166MHz Write Cycle Time - Word, Page: 1.8ms Access Time: - Voltage - Supply: 1.7V ~ 2V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-T-PBGA (6x8)	패키지: 24-TBGA	재고5,696	FLASH	FLASH - NOR	256Mb (32M x 8)	SPI	166MHz	1.8ms	-	1.7V ~ 2V	-40°C ~ 125°C (TA)	Surface Mount	24-TBGA	24-T-PBGA (6x8)
MT25QL256ABA8E12-0AUT TR	Micron Technology Inc.	IC FLASH NOR SER 256MB 24TPBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (32M x 8) Memory Interface: SPI Clock Frequency: 133MHz Write Cycle Time - Word, Page: 1.8ms Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-T-PBGA (6x8)	패키지: 24-TBGA	재고7,168	FLASH	FLASH - NOR	256Mb (32M x 8)	SPI	133MHz	1.8ms	-	2.7V ~ 3.6V	-40°C ~ 125°C (TA)	Surface Mount	24-TBGA	24-T-PBGA (6x8)
MT29F2G08ABAGAWP-AITES:G	Micron Technology Inc.	IC FLASH 2G PARALLEL 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 2Gb (256M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	패키지: 48-TFSOP (0.724", 18.40mm Width)	재고4,944	FLASH	FLASH - NAND (SLC)	2Gb (256M x 8)	Parallel	-	-	-	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP I
MT29F2G08ABAGAH4-AITES:G	Micron Technology Inc.	IC FLASH 2G PARALLEL 63VFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 2Gb (256M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 63-VFBGA Supplier Device Package: 63-VFBGA (9x11)	패키지: 63-VFBGA	재고3,520	FLASH	FLASH - NAND (SLC)	2Gb (256M x 8)	Parallel	-	-	-	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	63-VFBGA	63-VFBGA (9x11)
MT29F2G08ABAGAWP-AITES:G TR	Micron Technology Inc.	IC FLASH 2G PARALLEL 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 2Gb (256M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	패키지: 48-TFSOP (0.724", 18.40mm Width)	재고4,256	FLASH	FLASH - NAND (SLC)	2Gb (256M x 8)	Parallel	-	-	-	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP I
MT29F2G08ABAGAH4-AITES:G TR	Micron Technology Inc.	IC FLASH 2G PARALLEL 63VFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 2Gb (256M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 63-VFBGA Supplier Device Package: 63-VFBGA (9x11)	패키지: 63-VFBGA	재고2,272	FLASH	FLASH - NAND (SLC)	2Gb (256M x 8)	Parallel	-	-	-	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	63-VFBGA	63-VFBGA (9x11)
MT47H64M8SH-25E IT:H TR	Micron Technology Inc.	IC SDRAM DDR2 512M 60FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 512M (64M x 8) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Access Time: 400ps Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-FBGA (8x10)	패키지: 60-TFBGA	재고5,296	DRAM	SDRAM - DDR2	512M (64M x 8)	Parallel	400MHz	15ns	400ps	1.7V ~ 1.9V	-40°C ~ 95°C (TC)	Surface Mount	60-TFBGA	60-FBGA (8x10)
MT47H64M16NF-25E IT:M TR	Micron Technology Inc.	IC SDRAM DDR2 1G 84FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 1Gb (64M x 16) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Access Time: 400ps Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 84-TFBGA Supplier Device Package: 84-FBGA (8x12.5)	패키지: 84-TFBGA	재고2,464	DRAM	SDRAM - DDR2	1Gb (64M x 16)	Parallel	400MHz	15ns	400ps	1.7V ~ 1.9V	-40°C ~ 85°C (TA)	Surface Mount	84-TFBGA	84-FBGA (8x12.5)
MT47H128M8SH-25E IT:M TR	Micron Technology Inc.	IC SDRAM DDR2 1G 60FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 1Gb (128M x 8) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Access Time: 400ps Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-FBGA (8x10)	패키지: 60-TFBGA	재고2,960	DRAM	SDRAM - DDR2	1Gb (128M x 8)	Parallel	400MHz	15ns	400ps	1.7V ~ 1.9V	-40°C ~ 95°C (TC)	Surface Mount	60-TFBGA	60-FBGA (8x10)
MT47H64M8SH-25E:H TR	Micron Technology Inc.	IC SDRAM DDR2 512M 60FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 512M (64M x 8) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Access Time: 400ps Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: 0°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-FBGA (8x10)	패키지: 60-TFBGA	재고5,856	DRAM	SDRAM - DDR2	512M (64M x 8)	Parallel	400MHz	15ns	400ps	1.7V ~ 1.9V	0°C ~ 85°C (TC)	Surface Mount	60-TFBGA	60-FBGA (8x10)
MT47H64M16NF-25E:M TR	Micron Technology Inc.	IC SDRAM DDR2 1G 84FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 1Gb (64M x 16) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Access Time: 400ps Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: 0°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 84-TFBGA Supplier Device Package: 84-FBGA (8x12.5)	패키지: 84-TFBGA	재고5,120	DRAM	SDRAM - DDR2	1Gb (64M x 16)	Parallel	400MHz	15ns	400ps	1.7V ~ 1.9V	0°C ~ 85°C (TC)	Surface Mount	84-TFBGA	84-FBGA (8x12.5)
MT47H32M16NF-25E:H TR	Micron Technology Inc.	IC SDRAM DDR2 512M 84FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 512M (32M x 16) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Access Time: 400ps Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: 0°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 84-TFBGA Supplier Device Package: 84-FBGA (8x12.5)	패키지: 84-TFBGA	재고5,424	DRAM	SDRAM - DDR2	512M (32M x 16)	Parallel	400MHz	15ns	400ps	1.7V ~ 1.9V	0°C ~ 85°C (TC)	Surface Mount	84-TFBGA	84-FBGA (8x12.5)
MT29F4G01ABAFDWB-IT:F TR	Micron Technology Inc.	IC FLASH 4G SPI UPDFN Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 4Gb (4G x 1) Memory Interface: SPI Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-UDFN Supplier Device Package: 8-UPDFN (8x6) (MLP8)	패키지: 8-UDFN	재고5,808	FLASH	FLASH - NAND (SLC)	4Gb (4G x 1)	SPI	-	-	-	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	8-UDFN	8-UPDFN (8x6) (MLP8)
MT29F4G08ABAFAWP-IT:F TR	Micron Technology Inc.	IC FLASH 4G PARALLEL 48TSOP1 Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	패키지: 48-TFSOP (0.724", 18.40mm Width)	재고6,432	FLASH	FLASH - NAND (SLC)	4Gb (512M x 8)	Parallel	-	-	-	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP I
MT29F4G08ABBFAH4-IT:F TR	Micron Technology Inc.	IC FLASH NAND 4G PAR 63VFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7V ~ 1.95V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 63-VFBGA Supplier Device Package: 63-VFBGA (9x11)	패키지: 63-VFBGA	재고2,336	FLASH	FLASH - NAND (SLC)	4Gb (512M x 8)	Parallel	-	-	-	1.7V ~ 1.95V	-40°C ~ 85°C (TA)	Surface Mount	63-VFBGA	63-VFBGA (9x11)

MT29F4G16ABAFAH4-AIT:F

Micron Technology Inc.

IC FLASH SLC 4G 256MX16 FBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 4Gb (256M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Supplier Device Package: 63-VFBGA (9x11)

패키지: 63-VFBGA

재고5,376

FLASH

FLASH - NAND (SLC)

4Gb (256M x 16)

Parallel

-

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

63-VFBGA

63-VFBGA (9x11)

MT29F4G01ABBFD12-AAT:F TR

Micron Technology Inc.

IC FLASH NAND 4G SLC TBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 4Gb (4G x 1)
Memory Interface: SPI
Clock Frequency: 83MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-T-PBGA (6x8)

패키지: 24-TBGA

재고7,200

FLASH

FLASH - NAND (SLC)

4Gb (4G x 1)

SPI

83MHz

-

1.7V ~ 1.95V

-40°C ~ 105°C (TA)

Surface Mount

24-TBGA

24-T-PBGA (6x8)

MT29F4G01ABAFD12-AAT:F TR

Micron Technology Inc.

IC FLASH 4G SPI TBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 4Gb (4G x 1)
Memory Interface: SPI
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-T-PBGA (6x8)

패키지: 24-TBGA

재고6,864

FLASH

FLASH - NAND

4Gb (4G x 1)

SPI

-

2.7V ~ 3.6V

-40°C ~ 105°C (TC)

Surface Mount

24-TBGA

24-T-PBGA (6x8)

MT29F4G08ABBFAH4-AITES:F TR

Micron Technology Inc.

IC FLASH NAND 4G PAR 63VFBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,144

-

MT29F4G08ABAFAH4-AIT:F TR

Micron Technology Inc.

IC FLASH 4G PARALLEL 63VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 4Gb (512M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Supplier Device Package: 63-VFBGA (9x11)

패키지: 63-VFBGA

재고3,152

FLASH

FLASH - NAND

4Gb (512M x 8)

Parallel

-

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

63-VFBGA

63-VFBGA (9x11)

MT29F4G16ABAFAH4-AIT:F TR

Micron Technology Inc.

IC FLASH SLC 4G 256MX16 FBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 4Gb (256M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Supplier Device Package: 63-VFBGA (9x11)

패키지: 63-VFBGA

재고3,584

FLASH

FLASH - NAND (SLC)

4Gb (256M x 16)

Parallel

-

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

63-VFBGA

63-VFBGA (9x11)

MT29F1G01ABBFD12-AAT:F TR

Micron Technology Inc.

IC FLASH 1G SPI TBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 1Gb (1G x 1)
Memory Interface: SPI
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-T-PBGA (6x8)

패키지: 24-TBGA

재고5,632

FLASH

FLASH - NAND

1Gb (1G x 1)

SPI

-

1.7V ~ 1.95V

-40°C ~ 105°C (TA)

Surface Mount

24-TBGA

24-T-PBGA (6x8)

MT47H64M16NF-25E AIT:M TR

Micron Technology Inc.

IC SDRAM DDR2 1G 84FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 1Gb (64M x 16)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 400ps
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 84-TFBGA
Supplier Device Package: 84-FBGA (8x12.5)

패키지: 84-TFBGA

재고6,752

DRAM

SDRAM - DDR2

1Gb (64M x 16)

Parallel

400MHz

15ns

400ps

1.7V ~ 1.9V

-40°C ~ 85°C (TA)

Surface Mount

84-TFBGA

84-FBGA (8x12.5)

MT47H128M8SH-25E AIT:M TR

Micron Technology Inc.

IC SDRAM DDR2 1G 60FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 1Gb (128M x 8)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 400ps
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-FBGA (8x10)

패키지: 60-TFBGA

재고3,344

DRAM

SDRAM - DDR2

1Gb (128M x 8)

Parallel

400MHz

15ns

400ps

1.7V ~ 1.9V

-40°C ~ 95°C (TC)

Surface Mount

60-TFBGA

60-FBGA (8x10)

MT47H128M8SH-25E:M TR

Micron Technology Inc.

IC SDRAM DDR2 1G 60FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 1Gb (128M x 8)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 400ps
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-FBGA (8x10)

패키지: 60-TFBGA

재고4,656

DRAM

SDRAM - DDR2

1Gb (128M x 8)

Parallel

400MHz

15ns

400ps

1.7V ~ 1.9V

0°C ~ 85°C (TC)

Surface Mount

60-TFBGA

60-FBGA (8x10)

MT29F4G01ABBFDM70A3WC1

Micron Technology Inc.

IC FLASH NAND 4G SLC

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고4,224

-

MT29F4G01ABAFDM70A3WC1

Micron Technology Inc.

IC FLASH SLC 4G NAND

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,592

-

MT29F4G08ABBFAM70A3WC1

Micron Technology Inc.

IC FLASH SLC 4G DIE 512MX8

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 4Gb (512M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Wafer

패키지: Die

재고6,272

FLASH

FLASH - NAND (SLC)

4Gb (512M x 8)

Parallel

-

1.7V ~ 1.95V

0°C ~ 70°C (TA)

Surface Mount

Die

Wafer

MT25QU256ABA8E12-0AUT TR

Micron Technology Inc.

IC FLASH NOR SER 256M 24TPBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mb (32M x 8)
Memory Interface: SPI
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 1.8ms
Access Time: -
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-T-PBGA (6x8)

패키지: 24-TBGA

재고5,696

FLASH

FLASH - NOR

256Mb (32M x 8)

SPI

166MHz

1.8ms

-

1.7V ~ 2V

-40°C ~ 125°C (TA)

Surface Mount

24-TBGA

24-T-PBGA (6x8)

MT25QL256ABA8E12-0AUT TR

Micron Technology Inc.

IC FLASH NOR SER 256MB 24TPBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mb (32M x 8)
Memory Interface: SPI
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 1.8ms
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-T-PBGA (6x8)

패키지: 24-TBGA

재고7,168

FLASH

FLASH - NOR

256Mb (32M x 8)

SPI

133MHz

1.8ms

-

2.7V ~ 3.6V

-40°C ~ 125°C (TA)

Surface Mount

24-TBGA

24-T-PBGA (6x8)

MT29F2G08ABAGAWP-AITES:G

Micron Technology Inc.

IC FLASH 2G PARALLEL 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 2Gb (256M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I

패키지: 48-TFSOP (0.724", 18.40mm Width)

재고4,944

FLASH

FLASH - NAND (SLC)

2Gb (256M x 8)

Parallel

-

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP I

MT29F2G08ABAGAH4-AITES:G

Micron Technology Inc.

IC FLASH 2G PARALLEL 63VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 2Gb (256M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Supplier Device Package: 63-VFBGA (9x11)

패키지: 63-VFBGA

재고3,520

FLASH

FLASH - NAND (SLC)

2Gb (256M x 8)

Parallel

-

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

63-VFBGA

63-VFBGA (9x11)

MT29F2G08ABAGAWP-AITES:G TR

Micron Technology Inc.

IC FLASH 2G PARALLEL 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 2Gb (256M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I

패키지: 48-TFSOP (0.724", 18.40mm Width)

재고4,256

FLASH

FLASH - NAND (SLC)

2Gb (256M x 8)

Parallel

-

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP I

MT29F2G08ABAGAH4-AITES:G TR

Micron Technology Inc.

IC FLASH 2G PARALLEL 63VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 2Gb (256M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Supplier Device Package: 63-VFBGA (9x11)

패키지: 63-VFBGA

재고2,272

FLASH

FLASH - NAND (SLC)

2Gb (256M x 8)

Parallel

-

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

63-VFBGA

63-VFBGA (9x11)

MT47H64M8SH-25E IT:H TR

Micron Technology Inc.

IC SDRAM DDR2 512M 60FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 512M (64M x 8)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 400ps
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-FBGA (8x10)

패키지: 60-TFBGA

재고5,296

DRAM

SDRAM - DDR2

512M (64M x 8)

Parallel

400MHz

15ns

400ps

1.7V ~ 1.9V

-40°C ~ 95°C (TC)

Surface Mount

60-TFBGA

60-FBGA (8x10)

MT47H64M16NF-25E IT:M TR

Micron Technology Inc.

IC SDRAM DDR2 1G 84FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 1Gb (64M x 16)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 400ps
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 84-TFBGA
Supplier Device Package: 84-FBGA (8x12.5)

패키지: 84-TFBGA

재고2,464

DRAM

SDRAM - DDR2

1Gb (64M x 16)

Parallel

400MHz

15ns

400ps

1.7V ~ 1.9V

-40°C ~ 85°C (TA)

Surface Mount

84-TFBGA

84-FBGA (8x12.5)

MT47H128M8SH-25E IT:M TR

Micron Technology Inc.

IC SDRAM DDR2 1G 60FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 1Gb (128M x 8)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 400ps
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-FBGA (8x10)

패키지: 60-TFBGA

재고2,960

DRAM

SDRAM - DDR2

1Gb (128M x 8)

Parallel

400MHz

15ns

400ps

1.7V ~ 1.9V

-40°C ~ 95°C (TC)

Surface Mount

60-TFBGA

60-FBGA (8x10)

MT47H64M8SH-25E:H TR

Micron Technology Inc.

IC SDRAM DDR2 512M 60FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 512M (64M x 8)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 400ps
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-FBGA (8x10)

패키지: 60-TFBGA

재고5,856

DRAM

SDRAM - DDR2

512M (64M x 8)

Parallel

400MHz

15ns

400ps

1.7V ~ 1.9V

0°C ~ 85°C (TC)

Surface Mount

60-TFBGA

60-FBGA (8x10)

MT47H64M16NF-25E:M TR

Micron Technology Inc.

IC SDRAM DDR2 1G 84FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 1Gb (64M x 16)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 400ps
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 84-TFBGA
Supplier Device Package: 84-FBGA (8x12.5)

패키지: 84-TFBGA

재고5,120

DRAM

SDRAM - DDR2

1Gb (64M x 16)

Parallel

400MHz

15ns

400ps

1.7V ~ 1.9V

0°C ~ 85°C (TC)

Surface Mount

84-TFBGA

84-FBGA (8x12.5)

MT47H32M16NF-25E:H TR

Micron Technology Inc.

IC SDRAM DDR2 512M 84FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 512M (32M x 16)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 400ps
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 84-TFBGA
Supplier Device Package: 84-FBGA (8x12.5)

패키지: 84-TFBGA

재고5,424

DRAM

SDRAM - DDR2

512M (32M x 16)

Parallel

400MHz

15ns

400ps

1.7V ~ 1.9V

0°C ~ 85°C (TC)

Surface Mount

84-TFBGA

84-FBGA (8x12.5)

MT29F4G01ABAFDWB-IT:F TR

Micron Technology Inc.

IC FLASH 4G SPI UPDFN

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 4Gb (4G x 1)
Memory Interface: SPI
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UDFN
Supplier Device Package: 8-UPDFN (8x6) (MLP8)

패키지: 8-UDFN

재고5,808

FLASH

FLASH - NAND (SLC)

4Gb (4G x 1)

SPI

-

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

8-UDFN

8-UPDFN (8x6) (MLP8)

MT29F4G08ABAFAWP-IT:F TR

Micron Technology Inc.

IC FLASH 4G PARALLEL 48TSOP1

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 4Gb (512M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I

패키지: 48-TFSOP (0.724", 18.40mm Width)

재고6,432

FLASH

FLASH - NAND (SLC)

4Gb (512M x 8)

Parallel

-

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP I

MT29F4G08ABBFAH4-IT:F TR

Micron Technology Inc.

IC FLASH NAND 4G PAR 63VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 4Gb (512M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Supplier Device Package: 63-VFBGA (9x11)

패키지: 63-VFBGA

재고2,336

FLASH

FLASH - NAND (SLC)

4Gb (512M x 8)

Parallel

-

1.7V ~ 1.95V

-40°C ~ 85°C (TA)

Surface Mount

63-VFBGA

63-VFBGA (9x11)