페이지 90 - Micron Technology Inc. 제품 - 메모리

부품 번호	제조업체	설명	패키지	재고	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MT53E128M32D2DS-046 AIT:A	Micron Technology Inc.	IC DRAM LPDDR4 WFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 4Gb (128M x 32) Memory Interface: - Clock Frequency: 2.133GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 0.6V, 1.1V Operating Temperature: -40°C ~ 95°C Mounting Type: Surface Mount Package / Case: - Supplier Device Package: -	패키지: -	재고6,240	DRAM	SDRAM - Mobile LPDDR4	4Gb (128M x 32)	-	2.133GHz	-	-	0.6V, 1.1V	-40°C ~ 95°C	Surface Mount	-	-
MT29F2G08ABBGAH4-AATES:G	Micron Technology Inc.	IC FLASH 2G NAND SLC 63VFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 2Gb (256M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 30ns Access Time: - Voltage - Supply: 1.7V ~ 1.95V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 63-VFBGA Supplier Device Package: 63-VFBGA (9x11)	패키지: 63-VFBGA	재고4,848	FLASH	FLASH - NAND (SLC)	2Gb (256M x 8)	Parallel	-	30ns	-	1.7V ~ 1.95V	-40°C ~ 105°C (TA)	Surface Mount	63-VFBGA	63-VFBGA (9x11)
MT53E128M32D2DS-053 AIT:A TR	Micron Technology Inc.	IC DRAM LPDDR4 WFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 4Gb (128M x 32) Memory Interface: - Clock Frequency: 1.866GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 0.6V, 1.1V Operating Temperature: -40°C ~ 95°C Mounting Type: Surface Mount Package / Case: - Supplier Device Package: -	패키지: -	재고6,576	DRAM	SDRAM - Mobile LPDDR4	4Gb (128M x 32)	-	1.866GHz	-	-	0.6V, 1.1V	-40°C ~ 95°C	Surface Mount	-	-
MT53E128M32D2DS-046 AIT:A TR	Micron Technology Inc.	IC DRAM LPDDR4 WFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 4Gb (128M x 32) Memory Interface: - Clock Frequency: 2.133GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 0.6V, 1.1V Operating Temperature: -40°C ~ 95°C Mounting Type: Surface Mount Package / Case: - Supplier Device Package: -	패키지: -	재고5,600	DRAM	SDRAM - Mobile LPDDR4	4Gb (128M x 32)	-	2.133GHz	-	-	0.6V, 1.1V	-40°C ~ 95°C	Surface Mount	-	-
MT29F8G08ADBFAH4-AAT:F TR	Micron Technology Inc.	IC FLASH NAND 8G PAR VFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 8Gb (1G x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7V ~ 1.95V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 63-VFBGA Supplier Device Package: 63-VFBGA (9x11)	패키지: 63-VFBGA	재고4,816	FLASH	FLASH - NAND (SLC)	8Gb (1G x 8)	Parallel	-	-	-	1.7V ~ 1.95V	-40°C ~ 105°C (TA)	Surface Mount	63-VFBGA	63-VFBGA (9x11)
MT29F8G08ADAFAH4-AAT:F TR	Micron Technology Inc.	IC FLASH NAND 8G PAR VFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 8Gb (1G x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 63-VFBGA Supplier Device Package: 63-VFBGA (9x11)	패키지: 63-VFBGA	재고5,280	FLASH	FLASH - NAND (SLC)	8Gb (1G x 8)	Parallel	-	-	-	2.7V ~ 3.6V	-40°C ~ 105°C (TA)	Surface Mount	63-VFBGA	63-VFBGA (9x11)
MT29F8G01ADBFD12-AAT:F TR	Micron Technology Inc.	IC FLASH NAND 8G PAR TBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 8Gb (8G x 1) Memory Interface: SPI Clock Frequency: 83MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7V ~ 1.95V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-T-PBGA (6x8)	패키지: 24-TBGA	재고4,112	FLASH	FLASH - NAND (SLC)	8Gb (8G x 1)	SPI	83MHz	-	-	1.7V ~ 1.95V	-40°C ~ 105°C (TA)	Surface Mount	24-TBGA	24-T-PBGA (6x8)
MT29F8G01ADAFD12-AAT:F TR	Micron Technology Inc.	IC FLASH NAND 8G PAR TBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 8Gb (8G x 1) Memory Interface: SPI Clock Frequency: 83MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-T-PBGA (6x8)	패키지: 24-TBGA	재고4,480	FLASH	FLASH - NAND (SLC)	8Gb (8G x 1)	SPI	83MHz	-	-	2.7V ~ 3.6V	-40°C ~ 105°C (TA)	Surface Mount	24-TBGA	24-T-PBGA (6x8)
MT29F8G08ADAFAWP-AIT:F TR	Micron Technology Inc.	IC FLASH NAND 8G PAR TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 8Gb (1G x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	패키지: 48-TFSOP (0.724", 18.40mm Width)	재고5,760	FLASH	FLASH - NAND (SLC)	8Gb (1G x 8)	Parallel	-	-	-	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP I
MT53E256M16D1DS-046 WT:B	Micron Technology Inc.	IC DRAM LPDDR4 WFBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고7,920	-	-	-	-	-	-	-	-	-	-	-	-
MT46V32M16CY-5B XIT:J	Micron Technology Inc.	IC SDRAM DDR 512M 60FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 512M (32M x 16) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Voltage - Supply: 2.5V ~ 2.7V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-FBGA (8x12.5)	패키지: 60-TFBGA	재고5,392	DRAM	SDRAM - DDR	512M (32M x 16)	Parallel	200MHz	15ns	700ps	2.5V ~ 2.7V	-40°C ~ 85°C (TA)	Surface Mount	60-TFBGA	60-FBGA (8x12.5)
MT46V32M16CY-5B XIT:J TR	Micron Technology Inc.	IC SDRAM DDR 512M 60FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 512M (32M x 16) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Voltage - Supply: 2.5V ~ 2.7V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-FBGA (8x12.5)	패키지: 60-TFBGA	재고4,512	DRAM	SDRAM - DDR	512M (32M x 16)	Parallel	200MHz	15ns	700ps	2.5V ~ 2.7V	-40°C ~ 85°C (TA)	Surface Mount	60-TFBGA	60-FBGA (8x12.5)
MT53E256M16D1DS-046 WT:B TR	Micron Technology Inc.	IC DRAM LPDDR4 WFBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고6,336	-	-	-	-	-	-	-	-	-	-	-	-
MT53E128M32D2DS-053 WT:A	Micron Technology Inc.	IC DRAM LPDDR4 WFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 4Gb (128M x 32) Memory Interface: - Clock Frequency: 1.866GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 0.6V, 1.1V Operating Temperature: -30°C ~ 85°C Mounting Type: Surface Mount Package / Case: - Supplier Device Package: -	패키지: -	재고4,288	DRAM	SDRAM - Mobile LPDDR4	4Gb (128M x 32)	-	1.866GHz	-	-	0.6V, 1.1V	-30°C ~ 85°C	Surface Mount	-	-
MT53E128M32D2DS-046 WT:A	Micron Technology Inc.	IC DRAM LPDDR4 WFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 4Gb (128M x 32) Memory Interface: - Clock Frequency: 2.133GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 0.6V, 1.1V Operating Temperature: -30°C ~ 85°C Mounting Type: Surface Mount Package / Case: - Supplier Device Package: -	패키지: -	재고5,664	DRAM	SDRAM - Mobile LPDDR4	4Gb (128M x 32)	-	2.133GHz	-	-	0.6V, 1.1V	-30°C ~ 85°C	Surface Mount	-	-
MT41K256M16TW-107 IT:P	Micron Technology Inc.	IC SDRAM 4GBIT 933MHZ 96FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 4Gb (256M x 16) Memory Interface: Parallel Clock Frequency: 933MHz Write Cycle Time - Word, Page: - Access Time: 20ns Voltage - Supply: 1.283V ~ 1.45V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-FBGA (8x14)	패키지: 96-TFBGA	재고7,936	DRAM	SDRAM - DDR3L	4Gb (256M x 16)	Parallel	933MHz	-	20ns	1.283V ~ 1.45V	-40°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-FBGA (8x14)
MT40A512M8RH-083E:B TR	Micron Technology Inc.	IC SDRAM DDR4 4G 78FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Clock Frequency: 1.2GHz Write Cycle Time - Word, Page: 15ns Access Time: 19ns Voltage - Supply: 1.14V ~ 1.26V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-FBGA (9x10.5)	패키지: 78-TFBGA	재고5,680	DRAM	SDRAM - DDR4	4Gb (512M x 8)	Parallel	1.2GHz	15ns	19ns	1.14V ~ 1.26V	0°C ~ 95°C (TC)	Surface Mount	78-TFBGA	78-FBGA (9x10.5)
MT40A256M16GE-083E:B TR	Micron Technology Inc.	IC SDRAM DDR4 4G PAR 96FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 4Gb (256M x 16) Memory Interface: Parallel Clock Frequency: 1.2GHz Write Cycle Time - Word, Page: 15ns Access Time: 19ns Voltage - Supply: 1.14V ~ 1.26V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-FBGA (9x14)	패키지: 96-TFBGA	재고4,896	DRAM	SDRAM - DDR4	4Gb (256M x 16)	Parallel	1.2GHz	15ns	19ns	1.14V ~ 1.26V	0°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-FBGA (9x14)
MT40A256M16GE-075E:B TR	Micron Technology Inc.	IC SDRAM DDR4 4G PAR 96FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 4Gb (256M x 16) Memory Interface: Parallel Clock Frequency: 1.333GHz Write Cycle Time - Word, Page: 15ns Access Time: 19ns Voltage - Supply: 1.14V ~ 1.26V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-FBGA (9x14)	패키지: 96-TFBGA	재고7,328	DRAM	SDRAM - DDR4	4Gb (256M x 16)	Parallel	1.333GHz	15ns	19ns	1.14V ~ 1.26V	0°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-FBGA (9x14)
MT53E128M32D2DS-053 WT:A TR	Micron Technology Inc.	IC DRAM LPDDR4 WFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 4Gb (128M x 32) Memory Interface: - Clock Frequency: 1.866GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 0.6V, 1.1V Operating Temperature: -30°C ~ 85°C Mounting Type: Surface Mount Package / Case: - Supplier Device Package: -	패키지: -	재고5,184	DRAM	SDRAM - Mobile LPDDR4	4Gb (128M x 32)	-	1.866GHz	-	-	0.6V, 1.1V	-30°C ~ 85°C	Surface Mount	-	-
MT53E128M32D2DS-046 WT:A TR	Micron Technology Inc.	IC DRAM LPDDR4 WFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 4Gb (128M x 32) Memory Interface: - Clock Frequency: 2.133GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 0.6V, 1.1V Operating Temperature: -30°C ~ 85°C Mounting Type: Surface Mount Package / Case: - Supplier Device Package: -	패키지: -	재고4,944	DRAM	SDRAM - Mobile LPDDR4	4Gb (128M x 32)	-	2.133GHz	-	-	0.6V, 1.1V	-30°C ~ 85°C	Surface Mount	-	-
MT41K512M8DA-107 IT:P TR	Micron Technology Inc.	IC SDRAM DDR3 4GB 78FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Clock Frequency: 933MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Voltage - Supply: 1.283V ~ 1.45V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-FBGA (8x10.5)	패키지: 78-TFBGA	재고2,512	DRAM	SDRAM - DDR3L	4Gb (512M x 8)	Parallel	933MHz	15ns	20ns	1.283V ~ 1.45V	-40°C ~ 95°C (TC)	Surface Mount	78-TFBGA	78-FBGA (8x10.5)
MT41K256M16TW-107 IT:P TR	Micron Technology Inc.	IC SDRAM DDR3 4GB 96FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 4Gb (256M x 16) Memory Interface: Parallel Clock Frequency: 933MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Voltage - Supply: 1.283V ~ 1.45V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-FBGA (8x14)	패키지: 96-TFBGA	재고2,448	DRAM	SDRAM - DDR3L	4Gb (256M x 16)	Parallel	933MHz	15ns	20ns	1.283V ~ 1.45V	-40°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-FBGA (8x14)
MT47H256M4SH-25E:M TR	Micron Technology Inc.	IC SDRAM DDR2 1G 60FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 1Gb (256M x 4) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Access Time: 400ps Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: 0°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-FBGA (8x10)	패키지: 60-TFBGA	재고2,736	DRAM	SDRAM - DDR2	1Gb (256M x 4)	Parallel	400MHz	15ns	400ps	1.7V ~ 1.9V	0°C ~ 85°C (TC)	Surface Mount	60-TFBGA	60-FBGA (8x10)
MT53E128M16D1DS-053 AAT:A	Micron Technology Inc.	IC DRAM LPDDR4 WFBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고3,344	-	-	-	-	-	-	-	-	-	-	-	-
MT53E128M16D1DS-046 AAT:A	Micron Technology Inc.	IC DRAM LPDDR4 WFBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고3,760	-	-	-	-	-	-	-	-	-	-	-	-
MT41K512M8DA-093:P TR	Micron Technology Inc.	IC SDRAM DDR3 4GB 78FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Clock Frequency: 1.066GHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Voltage - Supply: 1.283V ~ 1.45V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-FBGA (8x10.5)	패키지: 78-TFBGA	재고6,880	DRAM	SDRAM - DDR3L	4Gb (512M x 8)	Parallel	1.066GHz	15ns	20ns	1.283V ~ 1.45V	0°C ~ 95°C (TC)	Surface Mount	78-TFBGA	78-FBGA (8x10.5)
MTFC4GACAALT-4M IT	Micron Technology Inc.	MODULE EMMC 4GB 100TBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 32Gb (4G x 8) Memory Interface: MMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-TBGA Supplier Device Package: 100-TBGA (14x18)	패키지: 100-TBGA	재고4,768	FLASH	FLASH - NAND	32Gb (4G x 8)	MMC	-	-	-	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	100-TBGA	100-TBGA (14x18)

MT53E128M32D2DS-046 AIT:A

Micron Technology Inc.

IC DRAM LPDDR4 WFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 4Gb (128M x 32)
Memory Interface: -
Clock Frequency: 2.133GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 0.6V, 1.1V
Operating Temperature: -40°C ~ 95°C
Mounting Type: Surface Mount
Package / Case: -
Supplier Device Package: -

패키지: -

재고6,240

DRAM

SDRAM - Mobile LPDDR4

4Gb (128M x 32)

-

2.133GHz

-

0.6V, 1.1V

-40°C ~ 95°C

Surface Mount

-

MT29F2G08ABBGAH4-AATES:G

Micron Technology Inc.

IC FLASH 2G NAND SLC 63VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 2Gb (256M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 30ns
Access Time: -
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Supplier Device Package: 63-VFBGA (9x11)

패키지: 63-VFBGA

재고4,848

FLASH

FLASH - NAND (SLC)

2Gb (256M x 8)

Parallel

-

30ns

-

1.7V ~ 1.95V

-40°C ~ 105°C (TA)

Surface Mount

63-VFBGA

63-VFBGA (9x11)

MT53E128M32D2DS-053 AIT:A TR

Micron Technology Inc.

IC DRAM LPDDR4 WFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 4Gb (128M x 32)
Memory Interface: -
Clock Frequency: 1.866GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 0.6V, 1.1V
Operating Temperature: -40°C ~ 95°C
Mounting Type: Surface Mount
Package / Case: -
Supplier Device Package: -

패키지: -

재고6,576

DRAM

SDRAM - Mobile LPDDR4

4Gb (128M x 32)

-

1.866GHz

-

0.6V, 1.1V

-40°C ~ 95°C

Surface Mount

-

MT53E128M32D2DS-046 AIT:A TR

Micron Technology Inc.

IC DRAM LPDDR4 WFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 4Gb (128M x 32)
Memory Interface: -
Clock Frequency: 2.133GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 0.6V, 1.1V
Operating Temperature: -40°C ~ 95°C
Mounting Type: Surface Mount
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,600

DRAM

SDRAM - Mobile LPDDR4

4Gb (128M x 32)

-

2.133GHz

-

0.6V, 1.1V

-40°C ~ 95°C

Surface Mount

-

MT29F8G08ADBFAH4-AAT:F TR

Micron Technology Inc.

IC FLASH NAND 8G PAR VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 8Gb (1G x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Supplier Device Package: 63-VFBGA (9x11)

패키지: 63-VFBGA

재고4,816

FLASH

FLASH - NAND (SLC)

8Gb (1G x 8)

Parallel

-

1.7V ~ 1.95V

-40°C ~ 105°C (TA)

Surface Mount

63-VFBGA

63-VFBGA (9x11)

MT29F8G08ADAFAH4-AAT:F TR

Micron Technology Inc.

IC FLASH NAND 8G PAR VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 8Gb (1G x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Supplier Device Package: 63-VFBGA (9x11)

패키지: 63-VFBGA

재고5,280

FLASH

FLASH - NAND (SLC)

8Gb (1G x 8)

Parallel

-

2.7V ~ 3.6V

-40°C ~ 105°C (TA)

Surface Mount

63-VFBGA

63-VFBGA (9x11)

MT29F8G01ADBFD12-AAT:F TR

Micron Technology Inc.

IC FLASH NAND 8G PAR TBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 8Gb (8G x 1)
Memory Interface: SPI
Clock Frequency: 83MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-T-PBGA (6x8)

패키지: 24-TBGA

재고4,112

FLASH

FLASH - NAND (SLC)

8Gb (8G x 1)

SPI

83MHz

-

1.7V ~ 1.95V

-40°C ~ 105°C (TA)

Surface Mount

24-TBGA

24-T-PBGA (6x8)

MT29F8G01ADAFD12-AAT:F TR

Micron Technology Inc.

IC FLASH NAND 8G PAR TBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 8Gb (8G x 1)
Memory Interface: SPI
Clock Frequency: 83MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-T-PBGA (6x8)

패키지: 24-TBGA

재고4,480

FLASH

FLASH - NAND (SLC)

8Gb (8G x 1)

SPI

83MHz

-

2.7V ~ 3.6V

-40°C ~ 105°C (TA)

Surface Mount

24-TBGA

24-T-PBGA (6x8)

MT29F8G08ADAFAWP-AIT:F TR

Micron Technology Inc.

IC FLASH NAND 8G PAR TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 8Gb (1G x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I

패키지: 48-TFSOP (0.724", 18.40mm Width)

재고5,760

FLASH

FLASH - NAND (SLC)

8Gb (1G x 8)

Parallel

-

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP I

MT53E256M16D1DS-046 WT:B

Micron Technology Inc.

IC DRAM LPDDR4 WFBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고7,920

-

MT46V32M16CY-5B XIT:J

Micron Technology Inc.

IC SDRAM DDR 512M 60FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 512M (32M x 16)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 700ps
Voltage - Supply: 2.5V ~ 2.7V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-FBGA (8x12.5)

패키지: 60-TFBGA

재고5,392

DRAM

SDRAM - DDR

512M (32M x 16)

Parallel

200MHz

15ns

700ps

2.5V ~ 2.7V

-40°C ~ 85°C (TA)

Surface Mount

60-TFBGA

60-FBGA (8x12.5)

MT46V32M16CY-5B XIT:J TR

Micron Technology Inc.

IC SDRAM DDR 512M 60FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 512M (32M x 16)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 700ps
Voltage - Supply: 2.5V ~ 2.7V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-FBGA (8x12.5)

패키지: 60-TFBGA

재고4,512

DRAM

SDRAM - DDR

512M (32M x 16)

Parallel

200MHz

15ns

700ps

2.5V ~ 2.7V

-40°C ~ 85°C (TA)

Surface Mount

60-TFBGA

60-FBGA (8x12.5)

MT53E256M16D1DS-046 WT:B TR

Micron Technology Inc.

IC DRAM LPDDR4 WFBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고6,336

-

MT53E128M32D2DS-053 WT:A

Micron Technology Inc.

IC DRAM LPDDR4 WFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 4Gb (128M x 32)
Memory Interface: -
Clock Frequency: 1.866GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 0.6V, 1.1V
Operating Temperature: -30°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: -
Supplier Device Package: -

패키지: -

재고4,288

DRAM

SDRAM - Mobile LPDDR4

4Gb (128M x 32)

-

1.866GHz

-

0.6V, 1.1V

-30°C ~ 85°C

Surface Mount

-

MT53E128M32D2DS-046 WT:A

Micron Technology Inc.

IC DRAM LPDDR4 WFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 4Gb (128M x 32)
Memory Interface: -
Clock Frequency: 2.133GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 0.6V, 1.1V
Operating Temperature: -30°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,664

DRAM

SDRAM - Mobile LPDDR4

4Gb (128M x 32)

-

2.133GHz

-

0.6V, 1.1V

-30°C ~ 85°C

Surface Mount

-

MT41K256M16TW-107 IT:P

Micron Technology Inc.

IC SDRAM 4GBIT 933MHZ 96FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 4Gb (256M x 16)
Memory Interface: Parallel
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: -
Access Time: 20ns
Voltage - Supply: 1.283V ~ 1.45V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (8x14)

패키지: 96-TFBGA

재고7,936

DRAM

SDRAM - DDR3L

4Gb (256M x 16)

Parallel

933MHz

-

20ns

1.283V ~ 1.45V

-40°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-FBGA (8x14)

MT40A512M8RH-083E:B TR

Micron Technology Inc.

IC SDRAM DDR4 4G 78FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 4Gb (512M x 8)
Memory Interface: Parallel
Clock Frequency: 1.2GHz
Write Cycle Time - Word, Page: 15ns
Access Time: 19ns
Voltage - Supply: 1.14V ~ 1.26V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-FBGA (9x10.5)

패키지: 78-TFBGA

재고5,680

DRAM

SDRAM - DDR4

4Gb (512M x 8)

Parallel

1.2GHz

15ns

19ns

1.14V ~ 1.26V

0°C ~ 95°C (TC)

Surface Mount

78-TFBGA

78-FBGA (9x10.5)

MT40A256M16GE-083E:B TR

Micron Technology Inc.

IC SDRAM DDR4 4G PAR 96FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 4Gb (256M x 16)
Memory Interface: Parallel
Clock Frequency: 1.2GHz
Write Cycle Time - Word, Page: 15ns
Access Time: 19ns
Voltage - Supply: 1.14V ~ 1.26V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (9x14)

패키지: 96-TFBGA

재고4,896

DRAM

SDRAM - DDR4

4Gb (256M x 16)

Parallel

1.2GHz

15ns

19ns

1.14V ~ 1.26V

0°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-FBGA (9x14)

MT40A256M16GE-075E:B TR

Micron Technology Inc.

IC SDRAM DDR4 4G PAR 96FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 4Gb (256M x 16)
Memory Interface: Parallel
Clock Frequency: 1.333GHz
Write Cycle Time - Word, Page: 15ns
Access Time: 19ns
Voltage - Supply: 1.14V ~ 1.26V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (9x14)

패키지: 96-TFBGA

재고7,328

DRAM

SDRAM - DDR4

4Gb (256M x 16)

Parallel

1.333GHz

15ns

19ns

1.14V ~ 1.26V

0°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-FBGA (9x14)

MT53E128M32D2DS-053 WT:A TR

Micron Technology Inc.

IC DRAM LPDDR4 WFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 4Gb (128M x 32)
Memory Interface: -
Clock Frequency: 1.866GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 0.6V, 1.1V
Operating Temperature: -30°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,184

DRAM

SDRAM - Mobile LPDDR4

4Gb (128M x 32)

-

1.866GHz

-

0.6V, 1.1V

-30°C ~ 85°C

Surface Mount

-

MT53E128M32D2DS-046 WT:A TR

Micron Technology Inc.

IC DRAM LPDDR4 WFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 4Gb (128M x 32)
Memory Interface: -
Clock Frequency: 2.133GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 0.6V, 1.1V
Operating Temperature: -30°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: -
Supplier Device Package: -

패키지: -

재고4,944

DRAM

SDRAM - Mobile LPDDR4

4Gb (128M x 32)

-

2.133GHz

-

0.6V, 1.1V

-30°C ~ 85°C

Surface Mount

-

MT41K512M8DA-107 IT:P TR

Micron Technology Inc.

IC SDRAM DDR3 4GB 78FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 4Gb (512M x 8)
Memory Interface: Parallel
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Voltage - Supply: 1.283V ~ 1.45V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-FBGA (8x10.5)

패키지: 78-TFBGA

재고2,512

DRAM

SDRAM - DDR3L

4Gb (512M x 8)

Parallel

933MHz

15ns

20ns

1.283V ~ 1.45V

-40°C ~ 95°C (TC)

Surface Mount

78-TFBGA

78-FBGA (8x10.5)

MT41K256M16TW-107 IT:P TR

Micron Technology Inc.

IC SDRAM DDR3 4GB 96FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 4Gb (256M x 16)
Memory Interface: Parallel
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Voltage - Supply: 1.283V ~ 1.45V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (8x14)

패키지: 96-TFBGA

재고2,448

DRAM

SDRAM - DDR3L

4Gb (256M x 16)

Parallel

933MHz

15ns

20ns

1.283V ~ 1.45V

-40°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-FBGA (8x14)

MT47H256M4SH-25E:M TR

Micron Technology Inc.

IC SDRAM DDR2 1G 60FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 1Gb (256M x 4)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 400ps
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-FBGA (8x10)

패키지: 60-TFBGA

재고2,736

DRAM

SDRAM - DDR2

1Gb (256M x 4)

Parallel

400MHz

15ns

400ps

1.7V ~ 1.9V

0°C ~ 85°C (TC)

Surface Mount

60-TFBGA

60-FBGA (8x10)

MT53E128M16D1DS-053 AAT:A

Micron Technology Inc.

IC DRAM LPDDR4 WFBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고3,344

-

MT53E128M16D1DS-046 AAT:A

Micron Technology Inc.

IC DRAM LPDDR4 WFBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고3,760

-

MT41K512M8DA-093:P TR

Micron Technology Inc.

IC SDRAM DDR3 4GB 78FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 4Gb (512M x 8)
Memory Interface: Parallel
Clock Frequency: 1.066GHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Voltage - Supply: 1.283V ~ 1.45V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-FBGA (8x10.5)

패키지: 78-TFBGA

재고6,880

DRAM

SDRAM - DDR3L

4Gb (512M x 8)

Parallel

1.066GHz

15ns

20ns

1.283V ~ 1.45V

0°C ~ 95°C (TC)

Surface Mount

78-TFBGA

78-FBGA (8x10.5)

MTFC4GACAALT-4M IT

Micron Technology Inc.

MODULE EMMC 4GB 100TBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 32Gb (4G x 8)
Memory Interface: MMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-TBGA
Supplier Device Package: 100-TBGA (14x18)

패키지: 100-TBGA

재고4,768

FLASH

FLASH - NAND

32Gb (4G x 8)

MMC

-

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

100-TBGA

100-TBGA (14x18)