페이지 12 - NXP 제품 - 트랜지스터 - FET, MOSFET - RF | Heisener Electronics
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NXP 제품 - 트랜지스터 - FET, MOSFET - RF

기록 1,171
페이지  12/42
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제조업체
설명
패키지
재고
수량
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
hot MRF7S19120NR1
NXP

FET RF 65V 1.99GHZ TO-270-4

  • Transistor Type: LDMOS
  • Frequency: 1.99GHz
  • Gain: 18dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.2A
  • Power - Output: 36W
  • Voltage - Rated: 65V
  • Package / Case: TO-270AB
  • Supplier Device Package: TO-270 WB-4
패키지: TO-270AB
재고35,592
1.99GHz
18dB
28V
-
-
1.2A
36W
65V
TO-270AB
TO-270 WB-4
MMRF1304LR5
NXP

FET RF 133V 512MHZ NI-360

  • Transistor Type: LDMOS
  • Frequency: 512MHz
  • Gain: 25.9dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 10mA
  • Power - Output: 25W
  • Voltage - Rated: 133V
  • Package / Case: NI-360
  • Supplier Device Package: NI-360
패키지: NI-360
재고7,584
512MHz
25.9dB
50V
-
-
10mA
25W
133V
NI-360
NI-360
MRF6VP3091NR5
NXP

FET RF 2CH 115V 860MHZ TO272-4

  • Transistor Type: LDMOS (Dual)
  • Frequency: 860MHz
  • Gain: 22dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 350mA
  • Power - Output: 18W
  • Voltage - Rated: 115V
  • Package / Case: TO-272-4
  • Supplier Device Package: TO-272-4
패키지: TO-272-4
재고3,600
860MHz
22dB
50V
-
-
350mA
18W
115V
TO-272-4
TO-272-4
MRF6VP3091NBR5
NXP

FET RF 2CH 115V 860MHZ TO272-4

  • Transistor Type: LDMOS (Dual)
  • Frequency: 860MHz
  • Gain: 22dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 350mA
  • Power - Output: 18W
  • Voltage - Rated: 115V
  • Package / Case: TO-272-4
  • Supplier Device Package: TO-272-4
패키지: TO-272-4
재고6,096
860MHz
22dB
50V
-
-
350mA
18W
115V
TO-272-4
TO-272-4
MRF6V3090NR1
NXP

FET RF 110V 860MHZ TO270-4

  • Transistor Type: LDMOS
  • Frequency: 860MHz
  • Gain: 22dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 350mA
  • Power - Output: 18W
  • Voltage - Rated: 110V
  • Package / Case: TO-270AB
  • Supplier Device Package: TO-270 WB-4
패키지: TO-270AB
재고4,816
860MHz
22dB
50V
-
-
350mA
18W
110V
TO-270AB
TO-270 WB-4
MRF6VP3091NR1
NXP

FET RF 2CH 115V 860MHZ TO270-4

  • Transistor Type: LDMOS (Dual)
  • Frequency: 860MHz
  • Gain: 22dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 350mA
  • Power - Output: 18W
  • Voltage - Rated: 115V
  • Package / Case: TO-270AB
  • Supplier Device Package: TO-270 WB-4
패키지: TO-270AB
재고3,392
860MHz
22dB
50V
-
-
350mA
18W
115V
TO-270AB
TO-270 WB-4
MRF6VP3091NBR1
NXP

FET RF 2CH 115V 860MHZ TO272-4

  • Transistor Type: LDMOS (Dual)
  • Frequency: 860MHz
  • Gain: 22dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 350mA
  • Power - Output: 18W
  • Voltage - Rated: 115V
  • Package / Case: TO-272BB
  • Supplier Device Package: TO-272 WB-4
패키지: TO-272BB
재고4,080
860MHz
22dB
50V
-
-
350mA
18W
115V
TO-272BB
TO-272 WB-4
MRF6V3090NBR1
NXP

FET RF 110V 860MHZ TO272-4

  • Transistor Type: LDMOS
  • Frequency: 860MHz
  • Gain: 22dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 350mA
  • Power - Output: 18W
  • Voltage - Rated: 110V
  • Package / Case: TO-272BB
  • Supplier Device Package: TO-272 WB-4
패키지: TO-272BB
재고4,304
860MHz
22dB
50V
-
-
350mA
18W
110V
TO-272BB
TO-272 WB-4
MMRF1018NR1
NXP

FET RF 120V 860MHZ

  • Transistor Type: LDMOS
  • Frequency: 860MHz
  • Gain: 22dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 350mA
  • Power - Output: 18W
  • Voltage - Rated: 120V
  • Package / Case: TO-270-4
  • Supplier Device Package: TO-270 WB-4
패키지: TO-270-4
재고2,432
860MHz
22dB
50V
-
-
350mA
18W
120V
TO-270-4
TO-270 WB-4
MMRF1018NBR1
NXP

FET RF 120V 860MHZ

  • Transistor Type: LDMOS
  • Frequency: 860MHz
  • Gain: 22dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 350mA
  • Power - Output: 18W
  • Voltage - Rated: 120V
  • Package / Case: TO-272-4
  • Supplier Device Package: TO-272-4
패키지: TO-272-4
재고6,480
860MHz
22dB
50V
-
-
350mA
18W
120V
TO-272-4
TO-272-4
hot MRF8S18120HSR3
NXP

FET RF 65V 1.81GHZ NI-780S

  • Transistor Type: LDMOS
  • Frequency: 1.81GHz
  • Gain: 18.2dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 800mA
  • Power - Output: 72W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
패키지: NI-780S
재고6,576
1.81GHz
18.2dB
28V
-
-
800mA
72W
65V
NI-780S
NI-780S
A2T20H160W04NR3
NXP

RF TRANS 2.0GHZ 160W OM780-4L

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고6,080
-
-
-
-
-
-
-
-
-
-
MRF8S21120HSR3
NXP

FET RF 65V 2.17GHZ NI780HS

  • Transistor Type: LDMOS
  • Frequency: 2.17GHz
  • Gain: 17.6dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 850mA
  • Power - Output: 28W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
패키지: NI-780S
재고5,952
2.17GHz
17.6dB
28V
-
-
850mA
28W
65V
NI-780S
NI-780S
MRF8P20100HSR3
NXP

FET RF 2CH 65V 2.03GHZ NI780H-4

  • Transistor Type: LDMOS (Dual)
  • Frequency: 2.03GHz
  • Gain: 16dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 400mA
  • Power - Output: 20W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S-4
  • Supplier Device Package: NI-780S-4
패키지: NI-780S-4
재고7,232
2.03GHz
16dB
28V
-
-
400mA
20W
65V
NI-780S-4
NI-780S-4
MRF8S9102NR3
NXP

FET RF 70V 920MHZ OM780-2

  • Transistor Type: LDMOS
  • Frequency: 920MHz
  • Gain: 23.1dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 750mA
  • Power - Output: 28W
  • Voltage - Rated: 70V
  • Package / Case: OM-780-2
  • Supplier Device Package: OM-780-2
패키지: OM-780-2
재고2,656
920MHz
23.1dB
28V
-
-
750mA
28W
70V
OM-780-2
OM-780-2
MRF8HP21080HSR3
NXP

FET RF 2CH 65V 2.17GHZ NI780S-4

  • Transistor Type: LDMOS (Dual)
  • Frequency: 2.17GHz
  • Gain: 14.4dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 16W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S-4
  • Supplier Device Package: NI-780S-4
패키지: NI-780S-4
재고2,608
2.17GHz
14.4dB
28V
-
-
150mA
16W
65V
NI-780S-4
NI-780S-4
hot MRF8S21100HSR3
NXP

FET RF 65V 2.17GHZ NI780S

  • Transistor Type: LDMOS
  • Frequency: 2.17GHz
  • Gain: 18.3dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 700mA
  • Power - Output: 24W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
패키지: NI-780S
재고6,960
2.17GHz
18.3dB
28V
-
-
700mA
24W
65V
NI-780S
NI-780S
MRF7S21080HSR3
NXP

FET RF 65V 2.17GHZ NI-780S

  • Transistor Type: LDMOS
  • Frequency: 2.17GHz
  • Gain: 18dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 800mA
  • Power - Output: 22W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
패키지: NI-780S
재고7,408
2.17GHz
18dB
28V
-
-
800mA
22W
65V
NI-780S
NI-780S
AFT26H050W26SR3
NXP

FET RF 2CH 65V 2.69GHZ NI780-4

  • Transistor Type: LDMOS
  • Frequency: 2.69GHz
  • Gain: 14.2dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 9W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S-4L4L-8
  • Supplier Device Package: NI-780S-4L4L-8
패키지: NI-780S-4L4L-8
재고3,296
2.69GHz
14.2dB
28V
-
-
100mA
9W
65V
NI-780S-4L4L-8
NI-780S-4L4L-8
MRF8S9120NR3
NXP

FET RF 70V 960MHZ QM780-2

  • Transistor Type: LDMOS
  • Frequency: 960MHz
  • Gain: 19.8dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 800mA
  • Power - Output: 33W
  • Voltage - Rated: 70V
  • Package / Case: OM-780-2
  • Supplier Device Package: OM-780-2
패키지: OM-780-2
재고7,984
960MHz
19.8dB
28V
-
-
800mA
33W
70V
OM-780-2
OM-780-2
hot MRF8P26080HSR3
NXP

FET RF 2CH 65V 2.62GHZ NI780S-4

  • Transistor Type: LDMOS (Dual)
  • Frequency: 2.62GHz
  • Gain: 15dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 300mA
  • Power - Output: 14W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S-4
  • Supplier Device Package: NI-780S-4
패키지: NI-780S-4
재고54,024
2.62GHz
15dB
28V
-
-
300mA
14W
65V
NI-780S-4
NI-780S-4
MRF8HP21080HR3
NXP

FET RF 2CH 65V 2.17GHZ NI780-4

  • Transistor Type: LDMOS (Dual)
  • Frequency: 2.17GHz
  • Gain: 14.4dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 16W
  • Voltage - Rated: 65V
  • Package / Case: NI-780-4
  • Supplier Device Package: NI-780-4
패키지: NI-780-4
재고3,520
2.17GHz
14.4dB
28V
-
-
150mA
16W
65V
NI-780-4
NI-780-4
hot MRF7P20040HSR3
NXP

FET RF 2CH 65V 2.03GHZ NI780HS-4

  • Transistor Type: LDMOS (Dual)
  • Frequency: 2.03GHz
  • Gain: 18.2dB
  • Voltage - Test: 32V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 10W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S-4
  • Supplier Device Package: NI-780S-4
패키지: NI-780S-4
재고7,932
2.03GHz
18.2dB
32V
-
-
150mA
10W
65V
NI-780S-4
NI-780S-4
A2T21H140-24SR3
NXP

RF FET 2.1GHZ 140W NI780S-4L2L

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,832
-
-
-
-
-
-
-
-
-
-
hot MRFE6S9125NR1
NXP

FET RF 66V 880MHZ TO-270-4

  • Transistor Type: LDMOS
  • Frequency: 880MHz
  • Gain: 20.2dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 950mA
  • Power - Output: 27W
  • Voltage - Rated: 66V
  • Package / Case: TO-270AB
  • Supplier Device Package: TO-270 WB-4
패키지: TO-270AB
재고8,748
880MHz
20.2dB
28V
-
-
950mA
27W
66V
TO-270AB
TO-270 WB-4
MRFE6S9125NBR1
NXP

FET RF 66V 880MHZ TO-272-4

  • Transistor Type: LDMOS
  • Frequency: 880MHz
  • Gain: 20.2dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 950mA
  • Power - Output: 27W
  • Voltage - Rated: 66V
  • Package / Case: TO-272BB
  • Supplier Device Package: TO-272 WB-4
패키지: TO-272BB
재고6,192
880MHz
20.2dB
28V
-
-
950mA
27W
66V
TO-272BB
TO-272 WB-4
hot MRF5S9080NBR1
NXP

FET RF 65V 960MHZ TO-272-4

  • Transistor Type: LDMOS
  • Frequency: 960MHz
  • Gain: 18.5dB
  • Voltage - Test: 26V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 600mA
  • Power - Output: 80W
  • Voltage - Rated: 65V
  • Package / Case: TO-272BB
  • Supplier Device Package: TO-272 WB-4
패키지: TO-272BB
재고16,764
960MHz
18.5dB
26V
-
-
600mA
80W
65V
TO-272BB
TO-272 WB-4
MMRF2004NBR1
NXP

FET RF 65V 2.7GHZ TO-272

  • Transistor Type: LDMOS
  • Frequency: 2.7GHz
  • Gain: 28.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 77mA
  • Power - Output: 4W
  • Voltage - Rated: 65V
  • Package / Case: TO-272-16 Variant, Flat Leads
  • Supplier Device Package: TO-272 WB-16
패키지: TO-272-16 Variant, Flat Leads
재고2,608
2.7GHz
28.5dB
28V
-
-
77mA
4W
65V
TO-272-16 Variant, Flat Leads
TO-272 WB-16