페이지 9 - NXP 제품 - 트랜지스터 - FET, MOSFET - RF | Heisener Electronics
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NXP 제품 - 트랜지스터 - FET, MOSFET - RF

기록 1,171
페이지  9/42
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제조업체
설명
패키지
재고
수량
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
MMRF1312HR5
NXP

TRANS 900-1215MHZ 1000W PEAK 50V

  • Transistor Type: LDMOS (Dual)
  • Frequency: 1.03GHz
  • Gain: 19.6dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 1000W
  • Voltage - Rated: 112V
  • Package / Case: SOT-979A
  • Supplier Device Package: NI-1230-4H
패키지: SOT-979A
재고3,216
1.03GHz
19.6dB
50V
-
-
100mA
1000W
112V
SOT-979A
NI-1230-4H
MMRF1009HR5
NXP

FET RF 110V 1.03GHZ NI-780S

  • Transistor Type: LDMOS
  • Frequency: 1.03GHz
  • Gain: 19.7dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 200mA
  • Power - Output: 500W
  • Voltage - Rated: 110V
  • Package / Case: SOT-957A
  • Supplier Device Package: NI-780H-2L
패키지: SOT-957A
재고7,296
1.03GHz
19.7dB
50V
-
-
200mA
500W
110V
SOT-957A
NI-780H-2L
MMRF1006HR5
NXP

FET RF 2CH 120V 450MHZ NI-1230

  • Transistor Type: LDMOS
  • Frequency: 450MHz
  • Gain: 20dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 1000W
  • Voltage - Rated: 120V
  • Package / Case: SOT-979A
  • Supplier Device Package: NI-1230-4H
패키지: SOT-979A
재고7,072
450MHz
20dB
50V
-
-
150mA
1000W
120V
SOT-979A
NI-1230-4H
MMRF1008HR5
NXP

FET RF 100V 1.03GHZ NI-780

  • Transistor Type: LDMOS
  • Frequency: 1.03GHz
  • Gain: 20.3dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 275W
  • Voltage - Rated: 100V
  • Package / Case: SOT-957A
  • Supplier Device Package: NI-780H-2L
패키지: SOT-957A
재고3,856
1.03GHz
20.3dB
50V
-
-
100mA
275W
100V
SOT-957A
NI-780H-2L
MMRF1306HR5
NXP

FET RF 2CH 133V 230MHZ NI-1230

  • Transistor Type: LDMOS (Dual)
  • Frequency: 230MHz
  • Gain: 24dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 1250W
  • Voltage - Rated: 133V
  • Package / Case: SOT-979A
  • Supplier Device Package: NI-1230-4H
패키지: SOT-979A
재고5,328
230MHz
24dB
50V
-
-
100mA
1250W
133V
SOT-979A
NI-1230-4H
hot MRF6VP11KHR5
NXP

FET RF 2CH 110V 130MHZ NI-1230

  • Transistor Type: LDMOS (Dual)
  • Frequency: 130MHz
  • Gain: 26dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 1000W
  • Voltage - Rated: 110V
  • Package / Case: NI-1230
  • Supplier Device Package: NI-1230
패키지: NI-1230
재고5,328
130MHz
26dB
50V
-
-
150mA
1000W
110V
NI-1230
NI-1230
MRF1K50NR5
NXP

WIDEBAND RF POWER LDMOS TRANSIST

  • Transistor Type: LDMOS
  • Frequency: 1.8MHz ~ 500MHz
  • Gain: 23dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 1500W
  • Voltage - Rated: 50V
  • Package / Case: OM-1230-4L
  • Supplier Device Package: OM-1230-4L
패키지: OM-1230-4L
재고5,104
1.8MHz ~ 500MHz
23dB
50V
-
-
-
1500W
50V
OM-1230-4L
OM-1230-4L
hot MRF6VP2600HR5
NXP

FET RF 2CH 110V 225MHZ NI-1230

  • Transistor Type: LDMOS (Dual)
  • Frequency: 225MHz
  • Gain: 25dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 2.6A
  • Power - Output: 125W
  • Voltage - Rated: 110V
  • Package / Case: NI-1230
  • Supplier Device Package: NI-1230
패키지: NI-1230
재고3,840
225MHz
25dB
50V
-
-
2.6A
125W
110V
NI-1230
NI-1230
MRFE6VP61K25NR6
NXP

TRANS RF LDMOS 1250W 50V

  • Transistor Type: LDMOS (Dual)
  • Frequency: 230MHz
  • Gain: 23dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 1250W
  • Voltage - Rated: 133V
  • Package / Case: OM-1230-4L
  • Supplier Device Package: OM-1230-4L
패키지: OM-1230-4L
재고3,264
230MHz
23dB
50V
-
-
100mA
1250W
133V
OM-1230-4L
OM-1230-4L
MRF24300NR3
NXP

RF POWER LDMOS TRANS 2450MHZ 300

  • Transistor Type: LDMOS
  • Frequency: 2.45GHz
  • Gain: 13.1dB
  • Voltage - Test: 32V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 330W
  • Voltage - Rated: 65V
  • Package / Case: OM-780-2
  • Supplier Device Package: OM-780-2
패키지: OM-780-2
재고4,480
2.45GHz
13.1dB
32V
-
-
100mA
330W
65V
OM-780-2
OM-780-2
MRF7S24250NR3
NXP

TRANS RF LDMOS 250W 32V

  • Transistor Type: LDMOS
  • Frequency: 2.45GHz
  • Gain: 14.7dB
  • Voltage - Test: 30V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 256W
  • Voltage - Rated: 65V
  • Package / Case: OM-780-2
  • Supplier Device Package: OM-780-2
패키지: OM-780-2
재고3,360
2.45GHz
14.7dB
30V
-
-
100mA
256W
65V
OM-780-2
OM-780-2
A2T23H300-24SR6
NXP

IC TRANS RF LDMOS

  • Transistor Type: LDMOS (Dual)
  • Frequency: 2.3GHz
  • Gain: 14.9dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 750mA
  • Power - Output: 66W
  • Voltage - Rated: 65V
  • Package / Case: NI-1230-4LS2L
  • Supplier Device Package: NI-1230-4LS2L
패키지: NI-1230-4LS2L
재고7,764
2.3GHz
14.9dB
28V
-
-
750mA
66W
65V
NI-1230-4LS2L
NI-1230-4LS2L
MRF8P20165WHSR5
NXP

FET RF 2CH 65V 2.01GHZ NI780S4

  • Transistor Type: LDMOS (Dual)
  • Frequency: 1.98GHz ~ 2.01GHz
  • Gain: 14.8dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 550mA
  • Power - Output: 37W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S-4
  • Supplier Device Package: NI-780S-4
패키지: NI-780S-4
재고6,396
1.98GHz ~ 2.01GHz
14.8dB
28V
-
-
550mA
37W
65V
NI-780S-4
NI-780S-4
MRF8P20140WHSR5
NXP

FET RF 2CH 65V 1.91GHZ NI780S-4

  • Transistor Type: LDMOS (Dual)
  • Frequency: 1.88GHz ~ 1.91GHz
  • Gain: 16dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 500mA
  • Power - Output: 24W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S-4
  • Supplier Device Package: NI-780S-4
패키지: NI-780S-4
재고7,344
1.88GHz ~ 1.91GHz
16dB
28V
-
-
500mA
24W
65V
NI-780S-4
NI-780S-4
MMRF1310HR5
NXP

FET RF 2CH 133V 230MHZ NI780

  • Transistor Type: LDMOS (Dual)
  • Frequency: 230MHz
  • Gain: 26.5dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 300W
  • Voltage - Rated: 133V
  • Package / Case: NI-780-4
  • Supplier Device Package: NI-780-4
패키지: NI-780-4
재고6,480
230MHz
26.5dB
50V
-
-
100mA
300W
133V
NI-780-4
NI-780-4
MRFE6VP6600NR3
NXP

TRANS RF LDMOS 600W 50V

  • Transistor Type: LDMOS (Dual)
  • Frequency: 230MHz
  • Gain: 24.7dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 600W
  • Voltage - Rated: 133V
  • Package / Case: OM780-4
  • Supplier Device Package: OM780-4
패키지: OM780-4
재고6,528
230MHz
24.7dB
50V
-
-
100mA
600W
133V
OM780-4
OM780-4
MMRF1305HR5
NXP

FET RF 2CH 133V 512MHZ NI-780-4

  • Transistor Type: LDMOS (Dual)
  • Frequency: 512MHz
  • Gain: 26dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 100W
  • Voltage - Rated: 133V
  • Package / Case: NI-780-4
  • Supplier Device Package: NI-780-4
패키지: NI-780-4
재고4,080
512MHz
26dB
50V
-
-
100mA
100W
133V
NI-780-4
NI-780-4
MW7IC2425NBR1
NXP

FET RF 65V 2.45GHZ TO-272-16

  • Transistor Type: LDMOS
  • Frequency: 2.45GHz
  • Gain: 27.7dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 55mA
  • Power - Output: 25W
  • Voltage - Rated: 65V
  • Package / Case: TO-272-16 Variant, Flat Leads
  • Supplier Device Package: TO-272 WB-16
패키지: TO-272-16 Variant, Flat Leads
재고3,600
2.45GHz
27.7dB
28V
-
-
55mA
25W
65V
TO-272-16 Variant, Flat Leads
TO-272 WB-16
MRF6V2300NBR1
NXP

FET RF 110V 220MHZ TO-272-4

  • Transistor Type: LDMOS
  • Frequency: 220MHz
  • Gain: 25.5dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 900mA
  • Power - Output: 300W
  • Voltage - Rated: 110V
  • Package / Case: TO-272BB
  • Supplier Device Package: TO-272 WB-4
패키지: TO-272BB
재고2,800
220MHz
25.5dB
50V
-
-
900mA
300W
110V
TO-272BB
TO-272 WB-4
MMRF1316NR1
NXP

FET RF 2CH 133V 230MHZ TO270

  • Transistor Type: LDMOS (Dual)
  • Frequency: 230MHz
  • Gain: 27dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 300W
  • Voltage - Rated: 133V
  • Package / Case: TO-270-4
  • Supplier Device Package: TO-270 WB-4
패키지: TO-270-4
재고3,568
230MHz
27dB
50V
-
-
100mA
300W
133V
TO-270-4
TO-270 WB-4
MRFE6VP5300NR1
NXP

FET RF 2CH 133V 230MHZ TO-270

  • Transistor Type: LDMOS (Dual)
  • Frequency: 230MHz
  • Gain: 27dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 300W
  • Voltage - Rated: 133V
  • Package / Case: TO-270AB
  • Supplier Device Package: TO-270 WB-4
패키지: TO-270AB
재고4,528
230MHz
27dB
50V
-
-
100mA
300W
133V
TO-270AB
TO-270 WB-4
MRFE6VP5300GNR1
NXP

FET RF 2CH 133V 230MHZ TO-270 GW

  • Transistor Type: LDMOS (Dual)
  • Frequency: 230MHz
  • Gain: 27dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 300W
  • Voltage - Rated: 133V
  • Package / Case: TO-270BB
  • Supplier Device Package: TO-270 WB-4 Gull
패키지: TO-270BB
재고3,632
230MHz
27dB
50V
-
-
100mA
300W
133V
TO-270BB
TO-270 WB-4 Gull
MRF6V10010NR4
NXP

FET RF 100V 1.09GHZ PLD-1.5

  • Transistor Type: LDMOS
  • Frequency: 1.09GHz
  • Gain: 25dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 10mA
  • Power - Output: 10W
  • Voltage - Rated: 100V
  • Package / Case: PLD-1.5
  • Supplier Device Package: PLD-1.5
패키지: PLD-1.5
재고6,084
1.09GHz
25dB
50V
-
-
10mA
10W
100V
PLD-1.5
PLD-1.5
MRF6V2150NBR1
NXP

FET RF 110V 220MHZ TO-272-4

  • Transistor Type: LDMOS
  • Frequency: 220MHz
  • Gain: 25dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 450mA
  • Power - Output: 150W
  • Voltage - Rated: 110V
  • Package / Case: TO-272BB
  • Supplier Device Package: TO-272 WB-4
패키지: TO-272BB
재고4,640
220MHz
25dB
50V
-
-
450mA
150W
110V
TO-272BB
TO-272 WB-4
MRF1570FNT1
NXP

FET RF 40V 470MHZ TO272-8

  • Transistor Type: LDMOS
  • Frequency: 470MHz
  • Gain: 11.5dB
  • Voltage - Test: 12.5V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 800mA
  • Power - Output: 70W
  • Voltage - Rated: 40V
  • Package / Case: TO-272-8
  • Supplier Device Package: TO-272-8 Flat Lead
패키지: TO-272-8
재고7,440
470MHz
11.5dB
12.5V
-
-
800mA
70W
40V
TO-272-8
TO-272-8 Flat Lead
hot MRFE6VP5150NR1
NXP

FET RF 2CH 133V 230MHZ TO-270

  • Transistor Type: LDMOS (Dual)
  • Frequency: 230MHz
  • Gain: 26.1dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 150W
  • Voltage - Rated: 133V
  • Package / Case: TO-270AB
  • Supplier Device Package: TO-270 WB-4
패키지: TO-270AB
재고4,608
230MHz
26.1dB
50V
-
-
100mA
150W
133V
TO-270AB
TO-270 WB-4
MRFE6VP5150GNR1
NXP

FET RF 2CH 133V 230MHZ TO-270 GW

  • Transistor Type: LDMOS (Dual)
  • Frequency: 230MHz
  • Gain: 26.1dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 150W
  • Voltage - Rated: 133V
  • Package / Case: TO-270BB
  • Supplier Device Package: TO-270 WB-4 Gull
패키지: TO-270BB
재고2,512
230MHz
26.1dB
50V
-
-
100mA
150W
133V
TO-270BB
TO-270 WB-4 Gull
MMRF1315NR1
NXP

FET RF 66V 880MHZ TO270

  • Transistor Type: LDMOS
  • Frequency: 880MHz
  • Gain: 21.1dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 450mA
  • Power - Output: 14W
  • Voltage - Rated: 66V
  • Package / Case: TO-270-2
  • Supplier Device Package: TO-270-2
패키지: TO-270-2
재고5,568
880MHz
21.1dB
28V
-
-
450mA
14W
66V
TO-270-2
TO-270-2