페이지 17 - NXP 제품 - 트랜지스터 - FET, MOSFET - RF | Heisener Electronics
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NXP 제품 - 트랜지스터 - FET, MOSFET - RF

기록 1,171
페이지  17/42
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제조업체
설명
패키지
재고
수량
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
MRF6P24190HR6
NXP

FET RF 68V 2.39GHZ NI-1230

  • Transistor Type: LDMOS
  • Frequency: 2.39GHz
  • Gain: 14dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.9A
  • Power - Output: 40W
  • Voltage - Rated: 68V
  • Package / Case: NI-1230
  • Supplier Device Package: NI-1230
패키지: NI-1230
재고7,552
2.39GHz
14dB
28V
-
-
1.9A
40W
68V
NI-1230
NI-1230
MRFE6VP61K25HSR5
NXP

FET RF 2CH 133V 230MHZ NI-1230S

  • Transistor Type: LDMOS (Dual)
  • Frequency: 230MHz
  • Gain: 24dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 1250W
  • Voltage - Rated: 133V
  • Package / Case: NI-1230S
  • Supplier Device Package: NI-1230S
패키지: NI-1230S
재고6,320
230MHz
24dB
50V
-
-
100mA
1250W
133V
NI-1230S
NI-1230S
MRF6VP11KGSR5
NXP

FET RF 2CH 110V 130MHZ NI-1230S

  • Transistor Type: LDMOS (Dual)
  • Frequency: 130MHz
  • Gain: 26dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 1000W
  • Voltage - Rated: 110V
  • Package / Case: NI-1230S-4 GW
  • Supplier Device Package: NI-1230S-4 GullWing
패키지: NI-1230S-4 GW
재고5,696
130MHz
26dB
50V
-
-
150mA
1000W
110V
NI-1230S-4 GW
NI-1230S-4 GullWing
MRF6VP2600HR6
NXP

FET RF 2CH 110V 225MHZ NI1230

  • Transistor Type: LDMOS (Dual)
  • Frequency: 225MHz
  • Gain: 25dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 2.6A
  • Power - Output: 125W
  • Voltage - Rated: 110V
  • Package / Case: NI-1230
  • Supplier Device Package: NI-1230
패키지: NI-1230
재고3,760
225MHz
25dB
50V
-
-
2.6A
125W
110V
NI-1230
NI-1230
MRFE6P3300HR3
NXP

FET RF 66V 863MHZ NI-860C3

  • Transistor Type: LDMOS
  • Frequency: 857MHz ~ 863MHz
  • Gain: 20.4dB
  • Voltage - Test: 32V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.6A
  • Power - Output: 270W
  • Voltage - Rated: 66V
  • Package / Case: NI-860C3
  • Supplier Device Package: NI-860C3
패키지: NI-860C3
재고4,160
857MHz ~ 863MHz
20.4dB
32V
-
-
1.6A
270W
66V
NI-860C3
NI-860C3
A2T18H450W19SR6
NXP

IC TRANS RF LDMOS

  • Transistor Type: LDMOS
  • Frequency: 1.805GHz ~ 1.88GHz
  • Gain: 16.5dB
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 89W
  • Voltage - Rated: 30V
  • Package / Case: NI-1230S-8 Variant, Flat Leads
  • Supplier Device Package: NI-1230S-8
패키지: NI-1230S-8 Variant, Flat Leads
재고5,648
1.805GHz ~ 1.88GHz
16.5dB
-
-
-
-
89W
30V
NI-1230S-8 Variant, Flat Leads
NI-1230S-8
AFV09P350-04NR3
NXP

FET RF 2CH 105V 920MHZ OM780-4

  • Transistor Type: LDMOS (Dual)
  • Frequency: 920MHz
  • Gain: 19.5dB
  • Voltage - Test: 48V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 860mA
  • Power - Output: 100W
  • Voltage - Rated: 105V
  • Package / Case: OM780-4
  • Supplier Device Package: OM780-4
패키지: OM780-4
재고2,928
920MHz
19.5dB
48V
-
-
860mA
100W
105V
OM780-4
OM780-4
AFV09P350-04GNR3
NXP

FET RF 2CH 105V 920MHZ OM780-4GW

  • Transistor Type: LDMOS (Dual)
  • Frequency: 920MHz
  • Gain: 19.5dB
  • Voltage - Test: 48V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 860mA
  • Power - Output: 100W
  • Voltage - Rated: 105V
  • Package / Case: OM-780G-4L
  • Supplier Device Package: OM-780G-4L
패키지: OM-780G-4L
재고4,000
920MHz
19.5dB
48V
-
-
860mA
100W
105V
OM-780G-4L
OM-780G-4L
MRF8VP13350NR3
NXP

TRANS RF LDMOS 350W 50V

  • Transistor Type: LDMOS (Dual)
  • Frequency: 1.3GHz
  • Gain: 19.2dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 350W
  • Voltage - Rated: 100V
  • Package / Case: OM780-4
  • Supplier Device Package: OM780-4
패키지: OM780-4
재고7,072
1.3GHz
19.2dB
50V
-
-
100mA
350W
100V
OM780-4
OM780-4
MRF8VP13350GNR3
NXP

TRANS RF LDMOS 350W 50V

  • Transistor Type: LDMOS (Dual)
  • Frequency: 1.3GHz
  • Gain: 19.2dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 350W
  • Voltage - Rated: 100V
  • Package / Case: OM-780G-4L
  • Supplier Device Package: OM-780G-4L
패키지: OM-780G-4L
재고2,912
1.3GHz
19.2dB
50V
-
-
100mA
350W
100V
OM-780G-4L
OM-780G-4L
MMRF1020-04GNR3
NXP

FET RF 2CH 105V 920MHZ OM780-4G

  • Transistor Type: LDMOS (Dual)
  • Frequency: 920MHz
  • Gain: 19.5dB
  • Voltage - Test: 48V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 860mA
  • Power - Output: 100W
  • Voltage - Rated: 105V
  • Package / Case: OM-780G-4L
  • Supplier Device Package: OM-780G-4L
패키지: OM-780G-4L
재고3,088
920MHz
19.5dB
48V
-
-
860mA
100W
105V
OM-780G-4L
OM-780G-4L
MRFE6VP61K25GNR6
NXP

TRANS RF LDMOS 1250W 50V

  • Transistor Type: LDMOS (Dual)
  • Frequency: 230MHz
  • Gain: 23dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 1250W
  • Voltage - Rated: 133V
  • Package / Case: OM-1230G-4L
  • Supplier Device Package: OM-1230G-4L
패키지: OM-1230G-4L
재고4,624
230MHz
23dB
50V
-
-
100mA
1250W
133V
OM-1230G-4L
OM-1230G-4L
MMRF1016HR5
NXP

FET RF 2CH 120V 225MHZ

  • Transistor Type: LDMOS (Dual)
  • Frequency: 225MHz
  • Gain: 25dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 2.6A
  • Power - Output: 125W
  • Voltage - Rated: 120V
  • Package / Case: SOT-979A
  • Supplier Device Package: NI-1230-4H
패키지: SOT-979A
재고5,424
225MHz
25dB
50V
-
-
2.6A
125W
120V
SOT-979A
NI-1230-4H
MHT1001HR5
NXP

IC TRANS RF LDMOS 2450MHZ

  • Transistor Type: LDMOS (Dual)
  • Frequency: 2.39GHz
  • Gain: 14dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.9A
  • Power - Output: 40W
  • Voltage - Rated: 68V
  • Package / Case: SOT-979A
  • Supplier Device Package: NI-1230-4H
패키지: SOT-979A
재고7,824
2.39GHz
14dB
28V
-
-
1.9A
40W
68V
SOT-979A
NI-1230-4H
MRFE8VP8600HR5
NXP

TRANS RF N-CH 600W 50V

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고3,952
-
-
-
-
-
-
-
-
-
-
MMRF1022HSR5
NXP

FET RF 2CH 65V 2.14GHZ NI1230S-4

  • Transistor Type: LDMOS (Dual)
  • Frequency: 2.14GHz
  • Gain: 16.2dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 500mA
  • Power - Output: 63W
  • Voltage - Rated: 65V
  • Package / Case: NI-1230-4LS2L
  • Supplier Device Package: NI-1230-4LS2L
패키지: NI-1230-4LS2L
재고5,872
2.14GHz
16.2dB
28V
-
-
500mA
63W
65V
NI-1230-4LS2L
NI-1230-4LS2L
MMRF1308HR5
NXP

FET RF 2CH 133V 230MHZ NI1230

  • Transistor Type: LDMOS (Dual)
  • Frequency: 230MHz
  • Gain: 25dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 600W
  • Voltage - Rated: 133V
  • Package / Case: SOT-979A
  • Supplier Device Package: NI-1230-4H
패키지: SOT-979A
재고2,336
230MHz
25dB
50V
-
-
100mA
600W
133V
SOT-979A
NI-1230-4H
MMRF1308HSR5
NXP

FET RF 2CH 133V 230MHZ

  • Transistor Type: LDMOS (Dual)
  • Frequency: 230MHz
  • Gain: 25dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 600W
  • Voltage - Rated: 133V
  • Package / Case: NI-1230-4S
  • Supplier Device Package: NI-1230-4S
패키지: NI-1230-4S
재고2,304
230MHz
25dB
50V
-
-
100mA
600W
133V
NI-1230-4S
NI-1230-4S
A2T18H410-24SR6
NXP

IC TRANS RF LDMOS

  • Transistor Type: LDMOS (Dual)
  • Frequency: 1.81GHz
  • Gain: 17.4dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 800mA
  • Power - Output: 71W
  • Voltage - Rated: 65V
  • Package / Case: NI-1230-4LS2L
  • Supplier Device Package: NI-1230-4LS2L
패키지: NI-1230-4LS2L
재고6,640
1.81GHz
17.4dB
28V
-
-
800mA
71W
65V
NI-1230-4LS2L
NI-1230-4LS2L
A2T21H410-24SR6
NXP

IC TRANS RF LDMOS

  • Transistor Type: LDMOS (Dual)
  • Frequency: 2.17GHz
  • Gain: 15.6dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 600mA
  • Power - Output: 72W
  • Voltage - Rated: 65V
  • Package / Case: NI-1230-4LS2L
  • Supplier Device Package: NI-1230-4LS2L
패키지: NI-1230-4LS2L
재고5,904
2.17GHz
15.6dB
28V
-
-
600mA
72W
65V
NI-1230-4LS2L
NI-1230-4LS2L
MRFE6VP5600HSR5
NXP

FET RF 2CH 130V 230MHZ NI1230S

  • Transistor Type: LDMOS (Dual)
  • Frequency: 230MHz
  • Gain: 25dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 600W
  • Voltage - Rated: 130V
  • Package / Case: NI-1230S
  • Supplier Device Package: NI-1230S
패키지: NI-1230S
재고6,928
230MHz
25dB
50V
-
-
100mA
600W
130V
NI-1230S
NI-1230S
MRFE6VP5600HR6
NXP

FET RF 2CH 130V 230MHZ NI1230

  • Transistor Type: LDMOS (Dual)
  • Frequency: 230MHz
  • Gain: 25dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 600W
  • Voltage - Rated: 130V
  • Package / Case: NI-1230
  • Supplier Device Package: NI-1230
패키지: NI-1230
재고4,128
230MHz
25dB
50V
-
-
100mA
600W
130V
NI-1230
NI-1230
MRFE6VP8600HSR5
NXP

FET RF 2CH 130V 860MHZ NI1230S

  • Transistor Type: LDMOS (Dual)
  • Frequency: 860MHz
  • Gain: 19.3dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.4A
  • Power - Output: 125W
  • Voltage - Rated: 130V
  • Package / Case: NI-1230S
  • Supplier Device Package: NI-1230S
패키지: NI-1230S
재고4,864
860MHz
19.3dB
50V
-
-
1.4A
125W
130V
NI-1230S
NI-1230S
AFT18HW355SR6
NXP

FET RF 2CH 65V 1.88GHZ NI1230S-4

  • Transistor Type: LDMOS (Dual)
  • Frequency: 1.88GHz
  • Gain: 15.2dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.1A
  • Power - Output: 63W
  • Voltage - Rated: 65V
  • Package / Case: NI-1230S
  • Supplier Device Package: NI-1230S
패키지: NI-1230S
재고3,504
1.88GHz
15.2dB
28V
-
-
1.1A
63W
65V
NI-1230S
NI-1230S
AFT18HW355SR5
NXP

FET RF 2CH 65V 1.88GHZ NI1230S-4

  • Transistor Type: LDMOS (Dual)
  • Frequency: 1.88GHz
  • Gain: 15.2dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.1A
  • Power - Output: 63W
  • Voltage - Rated: 65V
  • Package / Case: NI-1230S
  • Supplier Device Package: NI-1230S
패키지: NI-1230S
재고3,360
1.88GHz
15.2dB
28V
-
-
1.1A
63W
65V
NI-1230S
NI-1230S
AFT21H350W04GSR6
NXP

FET RF 2CH 65V 2.11GHZ

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz
  • Gain: 16.4dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 750mA
  • Power - Output: 63W
  • Voltage - Rated: 65V
  • Package / Case: NI-1230S-4 GW
  • Supplier Device Package: NI-1230S-4 GullWing
패키지: NI-1230S-4 GW
재고2,816
2.11GHz
16.4dB
28V
-
-
750mA
63W
65V
NI-1230S-4 GW
NI-1230S-4 GullWing
AFT21H350W03SR6
NXP

FET RF 2CH 65V 2.11GHZ NI1230S

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz
  • Gain: 16.4dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 750mA
  • Power - Output: 63W
  • Voltage - Rated: 65V
  • Package / Case: NI-1230S
  • Supplier Device Package: NI-1230S
패키지: NI-1230S
재고7,504
2.11GHz
16.4dB
28V
-
-
750mA
63W
65V
NI-1230S
NI-1230S
A2T21H360-24SR6
NXP

IC TRANS RF LDMOS

  • Transistor Type: LDMOS
  • Frequency: 2.14GHz
  • Gain: 16.2dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 500mA
  • Power - Output: 63W
  • Voltage - Rated: 65V
  • Package / Case: NI-1230-4LS2L
  • Supplier Device Package: NI-1230-4LS2L
패키지: NI-1230-4LS2L
재고2,336
2.14GHz
16.2dB
28V
-
-
500mA
63W
65V
NI-1230-4LS2L
NI-1230-4LS2L