페이지 18 - NXP 제품 - 트랜지스터 - FET, MOSFET - RF | Heisener Electronics
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NXP 제품 - 트랜지스터 - FET, MOSFET - RF

기록 1,171
페이지  18/42
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설명
패키지
재고
수량
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
MRF6VP41KHR5
NXP

FET RF 2CH 110V 450MHZ NI1230

  • Transistor Type: LDMOS (Dual)
  • Frequency: 450MHz
  • Gain: 20dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 1000W
  • Voltage - Rated: 110V
  • Package / Case: NI-1230
  • Supplier Device Package: NI-1230
패키지: NI-1230
재고3,680
450MHz
20dB
50V
-
-
150mA
1000W
110V
NI-1230
NI-1230
AFV121KHSR5
NXP

IC TRANS RF LDMOS

  • Transistor Type: LDMOS (Dual)
  • Frequency: 960MHz ~ 1.22GHz
  • Gain: 19.6dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 1000W
  • Voltage - Rated: 112V
  • Package / Case: NI-1230-4S
  • Supplier Device Package: NI-1230-4S
패키지: NI-1230-4S
재고7,888
960MHz ~ 1.22GHz
19.6dB
50V
-
-
100mA
1000W
112V
NI-1230-4S
NI-1230-4S
AFV121KHR5
NXP

IC TRANS RF LDMOS

  • Transistor Type: LDMOS (Dual)
  • Frequency: 960MHz ~ 1.22GHz
  • Gain: 19.6dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 1000W
  • Voltage - Rated: 112V
  • Package / Case: SOT-979A
  • Supplier Device Package: NI-1230-4H
패키지: SOT-979A
재고6,320
960MHz ~ 1.22GHz
19.6dB
50V
-
-
100mA
1000W
112V
SOT-979A
NI-1230-4H
AFV121KGSR5
NXP

IC TRANS RF LDMOS

  • Transistor Type: LDMOS (Dual)
  • Frequency: 960MHz ~ 1.22GHz
  • Gain: 19.6dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 1000W
  • Voltage - Rated: 112V
  • Package / Case: NI-1230-4S GW
  • Supplier Device Package: NI-1230-4S Gull Wing
패키지: NI-1230-4S GW
재고4,000
960MHz ~ 1.22GHz
19.6dB
50V
-
-
100mA
1000W
112V
NI-1230-4S GW
NI-1230-4S Gull Wing
MMRF1312GSR5
NXP

TRANS 960-1215MHZ 1000W PEAK 50V

  • Transistor Type: LDMOS (Dual)
  • Frequency: 1.03GHz
  • Gain: 19.6dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 1000W
  • Voltage - Rated: 112V
  • Package / Case: NI-1230-4S GW
  • Supplier Device Package: NI-1230-4S Gull Wing
패키지: NI-1230-4S GW
재고5,024
1.03GHz
19.6dB
50V
-
-
100mA
1000W
112V
NI-1230-4S GW
NI-1230-4S Gull Wing
AFG24S100HR5
NXP

IC TRANS RF LDMOS

  • Transistor Type: -
  • Frequency: 1MHz ~ 2.5GHz
  • Gain: 16.3dB
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 100W
  • Voltage - Rated: 50V
  • Package / Case: NI-360H-2SB
  • Supplier Device Package: NI-360H-2SB
패키지: NI-360H-2SB
재고3,552
1MHz ~ 2.5GHz
16.3dB
-
-
-
-
100W
50V
NI-360H-2SB
NI-360H-2SB
MMRF5014HR5
NXP

FET RF 125V 2.5GHZ NI360

  • Transistor Type: HEMT
  • Frequency: 2.5GHz
  • Gain: 18dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 350mA
  • Power - Output: 125W
  • Voltage - Rated: 125V
  • Package / Case: NI-360H-2SB
  • Supplier Device Package: NI-360H-2SB
패키지: NI-360H-2SB
재고4,000
2.5GHz
18dB
50V
-
-
350mA
125W
125V
NI-360H-2SB
NI-360H-2SB
MMRF5015NR5
NXP

TRANS RF N-CH 125W 50V

  • Transistor Type: HEMT
  • Frequency: 2.5GHz
  • Gain: 16.6dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 350mA
  • Power - Output: 125W
  • Voltage - Rated: 125V
  • Package / Case: TO-270-2
  • Supplier Device Package: OM-780-2
패키지: TO-270-2
재고2,784
2.5GHz
16.6dB
50V
-
-
350mA
125W
125V
TO-270-2
OM-780-2
MMRF1006HSR5
NXP

FET RF 2CH 120V 450MHZ NI-1230S

  • Transistor Type: LDMOS
  • Frequency: 450MHz
  • Gain: 20dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 1000W
  • Voltage - Rated: 120V
  • Package / Case: NI-1230S-4
  • Supplier Device Package: NI-1230S-4
패키지: NI-1230S-4
재고7,152
450MHz
20dB
50V
-
-
150mA
1000W
120V
NI-1230S-4
NI-1230S-4
MRF6V12500HR5
NXP

FET RF 110V 1.03GHZ NI-780H

  • Transistor Type: LDMOS
  • Frequency: 1.03GHz
  • Gain: 19.7dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 200mA
  • Power - Output: 500W
  • Voltage - Rated: 110V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
패키지: NI-780
재고4,608
1.03GHz
19.7dB
50V
-
-
200mA
500W
110V
NI-780
NI-780
MRF6V12500HSR5
NXP

FET RF 110V 1.03GHZ NI-1230H

  • Transistor Type: LDMOS
  • Frequency: 1.03GHz
  • Gain: 19.7dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 200mA
  • Power - Output: 500W
  • Voltage - Rated: 110V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
패키지: NI-780S
재고5,056
1.03GHz
19.7dB
50V
-
-
200mA
500W
110V
NI-780S
NI-780S
MMRF1009HSR5
NXP

FET RF 110V 1.03GHZ NI-780S

  • Transistor Type: LDMOS
  • Frequency: 1.03GHz
  • Gain: 19.7dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 200mA
  • Power - Output: 500W
  • Voltage - Rated: 110V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
패키지: NI-780S
재고3,840
1.03GHz
19.7dB
50V
-
-
200mA
500W
110V
NI-780S
NI-780S
MMRF1011HSR5
NXP

FET RF 100V 1.4GHZ

  • Transistor Type: LDMOS
  • Frequency: 1.4GHz
  • Gain: 18dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 330W
  • Voltage - Rated: 100V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
패키지: NI-780S
재고7,680
1.4GHz
18dB
50V
-
-
150mA
330W
100V
NI-780S
NI-780S
MMRF1011HR5
NXP

FET RF 100V 1.4GHZ

  • Transistor Type: LDMOS
  • Frequency: 1.4GHz
  • Gain: 18dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 330W
  • Voltage - Rated: 100V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
패키지: NI-780
재고7,648
1.4GHz
18dB
50V
-
-
150mA
330W
100V
NI-780
NI-780
hot MRF8P29300HSR6
NXP

FET RF 2CH 65V 2.9GHZ NI1230S

  • Transistor Type: LDMOS (Dual)
  • Frequency: 2.9GHz
  • Gain: 13.3dB
  • Voltage - Test: 30V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 320W
  • Voltage - Rated: 65V
  • Package / Case: NI-1230S
  • Supplier Device Package: NI-1230S
패키지: NI-1230S
재고7,408
2.9GHz
13.3dB
30V
-
-
100mA
320W
65V
NI-1230S
NI-1230S
MRF8P29300HR6
NXP

FET RF 2CH 65V 2.9GHZ NI1230

  • Transistor Type: LDMOS (Dual)
  • Frequency: 2.9GHz
  • Gain: 13.3dB
  • Voltage - Test: 30V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 320W
  • Voltage - Rated: 65V
  • Package / Case: NI-1230
  • Supplier Device Package: NI-1230
패키지: NI-1230
재고7,632
2.9GHz
13.3dB
30V
-
-
100mA
320W
65V
NI-1230
NI-1230
MMRF1013HSR5
NXP

FET RF 2CH 65V 2.9GHZ

  • Transistor Type: LDMOS (Dual)
  • Frequency: 2.9GHz
  • Gain: 13.3dB
  • Voltage - Test: 30V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 320W
  • Voltage - Rated: 65V
  • Package / Case: NI-1230-4S
  • Supplier Device Package: NI-1230-4S
패키지: NI-1230-4S
재고5,200
2.9GHz
13.3dB
30V
-
-
100mA
320W
65V
NI-1230-4S
NI-1230-4S
MMRF1013HR5
NXP

FET RF 2CH 65V 2.9GHZ

  • Transistor Type: LDMOS (Dual)
  • Frequency: 2.9GHz
  • Gain: 13.3dB
  • Voltage - Test: 30V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 320W
  • Voltage - Rated: 65V
  • Package / Case: SOT-979A
  • Supplier Device Package: NI-1230-4H
패키지: SOT-979A
재고3,488
2.9GHz
13.3dB
30V
-
-
100mA
320W
65V
SOT-979A
NI-1230-4H
MRF6V14300HSR5
NXP

FET RF 100V 1.4GHZ NI780S

  • Transistor Type: LDMOS
  • Frequency: 1.4GHz
  • Gain: 18dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 330W
  • Voltage - Rated: 100V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
패키지: NI-780S
재고6,656
1.4GHz
18dB
50V
-
-
150mA
330W
100V
NI-780S
NI-780S
MRF6V14300HR5
NXP

FET RF 100V 1.4GHZ NI780

  • Transistor Type: LDMOS
  • Frequency: 1.4GHz
  • Gain: 18dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 330W
  • Voltage - Rated: 100V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
패키지: NI-780
재고6,672
1.4GHz
18dB
50V
-
-
150mA
330W
100V
NI-780
NI-780
MRF6V13250HSR5
NXP

FET RF 120V 1.3GHZ NI780S

  • Transistor Type: LDMOS
  • Frequency: 1.3GHz
  • Gain: 22.7dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 250W
  • Voltage - Rated: 120V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
패키지: NI-780S
재고7,040
1.3GHz
22.7dB
50V
-
-
100mA
250W
120V
NI-780S
NI-780S
MRF6V13250HR5
NXP

FET RF 120V 1.3GHZ NI780

  • Transistor Type: LDMOS
  • Frequency: 1.3GHz
  • Gain: 22.7dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 250W
  • Voltage - Rated: 120V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
패키지: NI-780
재고2,240
1.3GHz
22.7dB
50V
-
-
100mA
250W
120V
NI-780
NI-780
MMRF1008HSR5
NXP

FET RF 100V 1.03GHZ NI-780S

  • Transistor Type: LDMOS
  • Frequency: 1.03GHz
  • Gain: 20.3dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 275W
  • Voltage - Rated: 100V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
패키지: NI-780S
재고5,328
1.03GHz
20.3dB
50V
-
-
100mA
275W
100V
NI-780S
NI-780S
MRFE6VP61K25GSR5
NXP

FET RF 2CH 133V 230MHZ NI1230GS

  • Transistor Type: LDMOS
  • Frequency: 230MHz
  • Gain: 24dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 1250W
  • Voltage - Rated: 133V
  • Package / Case: NI-1230S-4 GW
  • Supplier Device Package: NI-1230S-4 GullWing
패키지: NI-1230S-4 GW
재고5,456
230MHz
24dB
50V
-
-
100mA
1250W
133V
NI-1230S-4 GW
NI-1230S-4 GullWing
MMRF1306HSR5
NXP

FET RF 2CH 133V 230MHZ NI-1230S

  • Transistor Type: LDMOS (Dual)
  • Frequency: 230MHz
  • Gain: 24dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 1250W
  • Voltage - Rated: 133V
  • Package / Case: NI-1230-4S
  • Supplier Device Package: NI-1230-4S
패키지: NI-1230-4S
재고7,296
230MHz
24dB
50V
-
-
100mA
1250W
133V
NI-1230-4S
NI-1230-4S
MMRF1005HSR5
NXP

FET RF 120V 1.3GHZ NI-780S

  • Transistor Type: LDMOS
  • Frequency: 1.3GHz
  • Gain: 22.7dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 250W
  • Voltage - Rated: 120V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
패키지: NI-780S
재고6,144
1.3GHz
22.7dB
50V
-
-
100mA
250W
120V
NI-780S
NI-780S
MMRF1005HR5
NXP

FET RF 120V 1.3GHZ NI-780

  • Transistor Type: LDMOS
  • Frequency: 1.3GHz
  • Gain: 22.7dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 250W
  • Voltage - Rated: 120V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
패키지: NI-780
재고6,320
1.3GHz
22.7dB
50V
-
-
100mA
250W
120V
NI-780
NI-780
MRF6V12250HSR5
NXP

FET RF 100V 1.03GHZ NI-780S

  • Transistor Type: LDMOS
  • Frequency: 1.03GHz
  • Gain: 20.3dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 275W
  • Voltage - Rated: 100V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
패키지: NI-780S
재고3,360
1.03GHz
20.3dB
50V
-
-
100mA
275W
100V
NI-780S
NI-780S