페이지 4 - ON Semiconductor 제품 - 트랜지스터 - IGBT - 단일 | Heisener Electronics
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ON Semiconductor 제품 - 트랜지스터 - IGBT - 단일

기록 148
페이지  4/6
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
NGB8202NT4
ON Semiconductor

IGBT 440V 20A 150W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 440V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 50A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 4.5V, 20A
  • Power - Max: 150W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: -
  • Td (on/off) @ 25°C: -/5µs
  • Test Condition: 300V, 9A, 1 kOhm, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고2,256
440V
20A
50A
1.9V @ 4.5V, 20A
150W
-
Logic
-
-/5µs
300V, 9A, 1 kOhm, 5V
-
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
hot MGB15N40CLT4
ON Semiconductor

IGBT 440V 15A 150W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 440V
  • Current - Collector (Ic) (Max): 15A
  • Current - Collector Pulsed (Icm): 50A
  • Vce(on) (Max) @ Vge, Ic: 2.9V @ 4V, 25A
  • Power - Max: 150W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: -
  • Td (on/off) @ 25°C: -/4µs
  • Test Condition: 300V, 6.5A, 1 kOhm
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고150,516
440V
15A
50A
2.9V @ 4V, 25A
150W
-
Logic
-
-/4µs
300V, 6.5A, 1 kOhm
-
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
hot NGP15N41CLG
ON Semiconductor

IGBT 440V 15A 107W TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 440V
  • Current - Collector (Ic) (Max): 15A
  • Current - Collector Pulsed (Icm): 50A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 4V, 10A
  • Power - Max: 107W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: -
  • Td (on/off) @ 25°C: -/4µs
  • Test Condition: 300V, 6.5A, 1 kOhm
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고3,904
440V
15A
50A
2.2V @ 4V, 10A
107W
-
Logic
-
-/4µs
300V, 6.5A, 1 kOhm
-
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220AB
hot NGB18N40CLBT4G
ON Semiconductor

IGBT 430V 18A 115W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 430V
  • Current - Collector (Ic) (Max): 18A
  • Current - Collector Pulsed (Icm): 50A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 4V, 15A
  • Power - Max: 115W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고165,408
430V
18A
50A
2.5V @ 4V, 15A
115W
-
Logic
-
-
-
-
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
MGP15N40CLG
ON Semiconductor

IGBT 440V 15A 150W TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 440V
  • Current - Collector (Ic) (Max): 15A
  • Current - Collector Pulsed (Icm): 50A
  • Vce(on) (Max) @ Vge, Ic: 2.9V @ 4V, 25A
  • Power - Max: 150W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: -
  • Td (on/off) @ 25°C: -/4µs
  • Test Condition: 300V, 6.5A, 1 kOhm
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고2,640
440V
15A
50A
2.9V @ 4V, 25A
150W
-
Logic
-
-/4µs
300V, 6.5A, 1 kOhm
-
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220AB
NGP15N41CL
ON Semiconductor

IGBT 440V 15A 107W TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 440V
  • Current - Collector (Ic) (Max): 15A
  • Current - Collector Pulsed (Icm): 50A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 4V, 10A
  • Power - Max: 107W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: -
  • Td (on/off) @ 25°C: -/4µs
  • Test Condition: 300V, 6.5A, 1 kOhm
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고5,664
440V
15A
50A
2.2V @ 4V, 10A
107W
-
Logic
-
-/4µs
300V, 6.5A, 1 kOhm
-
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220AB
NGD18N40CLBT4
ON Semiconductor

IGBT 430V 15A 115W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 430V
  • Current - Collector (Ic) (Max): 15A
  • Current - Collector Pulsed (Icm): 50A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 4V, 15A
  • Power - Max: 115W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK-3
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고3,440
430V
15A
50A
2.5V @ 4V, 15A
115W
-
Logic
-
-
-
-
-55°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK-3
hot NGB18N40CLBT4
ON Semiconductor

IGBT 430V 18A 115W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 430V
  • Current - Collector (Ic) (Max): 18A
  • Current - Collector Pulsed (Icm): 50A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 4V, 15A
  • Power - Max: 115W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고7,248
430V
18A
50A
2.5V @ 4V, 15A
115W
-
Logic
-
-
-
-
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
hot NGB15N41CLT4
ON Semiconductor

IGBT 440V 15A 107W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 440V
  • Current - Collector (Ic) (Max): 15A
  • Current - Collector Pulsed (Icm): 50A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 4V, 10A
  • Power - Max: 107W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: -
  • Td (on/off) @ 25°C: -/4µs
  • Test Condition: 300V, 6.5A, 1 kOhm
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고10,188
440V
15A
50A
2.2V @ 4V, 10A
107W
-
Logic
-
-/4µs
300V, 6.5A, 1 kOhm
-
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
NGD15N41CLT4
ON Semiconductor

IGBT 440V 15A 107W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 440V
  • Current - Collector (Ic) (Max): 15A
  • Current - Collector Pulsed (Icm): 50A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 4V, 10A
  • Power - Max: 107W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: -
  • Td (on/off) @ 25°C: -/4µs
  • Test Condition: 300V, 6.5A, 1 kOhm
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK-3
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고5,088
440V
15A
50A
2.2V @ 4V, 10A
107W
-
Logic
-
-/4µs
300V, 6.5A, 1 kOhm
-
-55°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK-3
MGP15N40CL
ON Semiconductor

IGBT 440V 15A 150W TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 440V
  • Current - Collector (Ic) (Max): 15A
  • Current - Collector Pulsed (Icm): 50A
  • Vce(on) (Max) @ Vge, Ic: 2.9V @ 4V, 25A
  • Power - Max: 150W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: -
  • Td (on/off) @ 25°C: -/4µs
  • Test Condition: 300V, 6.5A, 1 kOhm
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고2,000
440V
15A
50A
2.9V @ 4V, 25A
150W
-
Logic
-
-/4µs
300V, 6.5A, 1 kOhm
-
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220AB
NGTB30N120L2WG
ON Semiconductor

IGBT 1200V 60A 534W TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
  • Power - Max: 534W
  • Switching Energy: 4.4mJ (on), 1.4mJ (off)
  • Input Type: Standard
  • Gate Charge: 310nC
  • Td (on/off) @ 25°C: 116ns/285ns
  • Test Condition: 600V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 450ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고7,504
1200V
60A
120A
1.9V @ 15V, 30A
534W
4.4mJ (on), 1.4mJ (off)
Standard
310nC
116ns/285ns
600V, 30A, 10 Ohm, 15V
450ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
NGTB75N65FL2WG
ON Semiconductor

IGBT 600V 75A TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
  • Power - Max: 595W
  • Switching Energy: 1.5mJ (on), 1mJ (off)
  • Input Type: Standard
  • Gate Charge: 310nC
  • Td (on/off) @ 25°C: 110ns/270ns
  • Test Condition: 400V, 75A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 80ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고6,944
650V
100A
200A
2V @ 15V, 75A
595W
1.5mJ (on), 1mJ (off)
Standard
310nC
110ns/270ns
400V, 75A, 10 Ohm, 15V
80ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
hot NGTB30N120FL2WG
ON Semiconductor

IGBT 1200V 60A 452W TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
  • Power - Max: 452W
  • Switching Energy: 2.6mJ (on), 700µJ (off)
  • Input Type: Standard
  • Gate Charge: 220nC
  • Td (on/off) @ 25°C: 98ns/210ns
  • Test Condition: 600V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 240ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고7,632
1200V
60A
120A
2.3V @ 15V, 30A
452W
2.6mJ (on), 700µJ (off)
Standard
220nC
98ns/210ns
600V, 30A, 10 Ohm, 15V
240ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
hot NGTB75N60FL2WG
ON Semiconductor

IGBT 600V 75A TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
  • Power - Max: 595W
  • Switching Energy: 1.5mJ (on), 1mJ (off)
  • Input Type: Standard
  • Gate Charge: 310nC
  • Td (on/off) @ 25°C: 110ns/270ns
  • Test Condition: 400V, 75A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 80ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고6,160
600V
100A
200A
2V @ 15V, 75A
595W
1.5mJ (on), 1mJ (off)
Standard
310nC
110ns/270ns
400V, 75A, 10 Ohm, 15V
80ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
NGTB50N60L2WG
ON Semiconductor

IGBT 600V 50A TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
  • Power - Max: 500W
  • Switching Energy: 800µJ (on), 600µJ (off)
  • Input Type: Standard
  • Gate Charge: 310nC
  • Td (on/off) @ 25°C: 110ns/270ns
  • Test Condition: 400V, 50A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 67ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고4,544
600V
100A
200A
1.8V @ 15V, 50A
500W
800µJ (on), 600µJ (off)
Standard
310nC
110ns/270ns
400V, 50A, 10 Ohm, 15V
67ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
NGTG40N120FL2WG
ON Semiconductor

IGBT 1200V 40A TO-247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
  • Power - Max: 535W
  • Switching Energy: 3.4mJ (on), 1.1mJ (off)
  • Input Type: Standard
  • Gate Charge: 313nC
  • Td (on/off) @ 25°C: 116ns/286ns
  • Test Condition: 600V, 40A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: TO-247-3
재고5,888
1200V
80A
200A
2.4V @ 15V, 40A
535W
3.4mJ (on), 1.1mJ (off)
Standard
313nC
116ns/286ns
600V, 40A, 10 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
NGTB50N65FL2WG
ON Semiconductor

IGBT 600V 50A TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
  • Power - Max: 417W
  • Switching Energy: 1.5mJ (on), 460µJ (off)
  • Input Type: Standard
  • Gate Charge: 220nC
  • Td (on/off) @ 25°C: 100ns/237ns
  • Test Condition: 400V, 50A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 94ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: TO-247-3
재고7,088
650V
100A
200A
2V @ 15V, 50A
417W
1.5mJ (on), 460µJ (off)
Standard
220nC
100ns/237ns
400V, 50A, 10 Ohm, 15V
94ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
NGTB60N60SWG
ON Semiconductor

IGBT 600V 120A 298W TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 120A
  • Current - Collector Pulsed (Icm): 240A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
  • Power - Max: 298W
  • Switching Energy: 1.41mJ (on), 600µJ (off)
  • Input Type: Standard
  • Gate Charge: 173nC
  • Td (on/off) @ 25°C: 87ns/180ns
  • Test Condition: 400V, 60A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 76ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고3,408
600V
120A
240A
2.5V @ 15V, 60A
298W
1.41mJ (on), 600µJ (off)
Standard
173nC
87ns/180ns
400V, 60A, 10 Ohm, 15V
76ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
NGTB75N60SWG
ON Semiconductor

IGBT 75A 600V TO-247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
  • Power - Max: 595W
  • Switching Energy: 1.5mJ (on), 1mJ (off)
  • Input Type: Standard
  • Gate Charge: 310nC
  • Td (on/off) @ 25°C: 110ns/270ns
  • Test Condition: 400V, 75A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 80ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: TO-247-3
재고4,832
600V
100A
200A
2V @ 15V, 75A
595W
1.5mJ (on), 1mJ (off)
Standard
310nC
110ns/270ns
400V, 75A, 10 Ohm, 15V
80ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
hot NGTB50N60FL2WG
ON Semiconductor

IGBT 600V 50A TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
  • Power - Max: 417W
  • Switching Energy: 1.5mJ (on), 460µJ (off)
  • Input Type: Standard
  • Gate Charge: 220nC
  • Td (on/off) @ 25°C: 100ns/237ns
  • Test Condition: 400V, 50A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 94ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: TO-247-3
재고4,784
600V
100A
200A
2V @ 15V, 50A
417W
1.5mJ (on), 460µJ (off)
Standard
220nC
100ns/237ns
400V, 50A, 10 Ohm, 15V
94ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
NGTB40N60L2WG
ON Semiconductor

IGBT 600V 80A 417W TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2.61V @ 15V, 40A
  • Power - Max: 417W
  • Switching Energy: 1.17mJ (on), 280µJ (off)
  • Input Type: Standard
  • Gate Charge: 228nC
  • Td (on/off) @ 25°C: 98ns/213ns
  • Test Condition: 400V, 40A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 73ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고7,984
600V
80A
160A
2.61V @ 15V, 40A
417W
1.17mJ (on), 280µJ (off)
Standard
228nC
98ns/213ns
400V, 40A, 10 Ohm, 15V
73ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
NGTB50N60S1WG
ON Semiconductor

IGBT 50A 600V TO-247

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
  • Power - Max: 417W
  • Switching Energy: 1.5mJ (on), 460µJ (off)
  • Input Type: Standard
  • Gate Charge: 220nC
  • Td (on/off) @ 25°C: 100ns/237ns
  • Test Condition: 400V, 50A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 94ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: TO-247-3
재고3,936
600V
100A
200A
2V @ 15V, 50A
417W
1.5mJ (on), 460µJ (off)
Standard
220nC
100ns/237ns
400V, 50A, 10 Ohm, 15V
94ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
NGTB40N60FLWG
ON Semiconductor

IGBT 600V 80A 257W TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
  • Power - Max: 257W
  • Switching Energy: 890µJ (on), 440µJ (off)
  • Input Type: Standard
  • Gate Charge: 171nC
  • Td (on/off) @ 25°C: 85ns/174ns
  • Test Condition: 400V, 40A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 77ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고5,904
600V
80A
160A
2.1V @ 15V, 40A
257W
890µJ (on), 440µJ (off)
Standard
171nC
85ns/174ns
400V, 40A, 10 Ohm, 15V
77ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
NGTB75N65FL2WAG
ON Semiconductor

IGBT FIELD STOP 650V TO247-4

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 200A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
  • Power - Max: 536W
  • Switching Energy: 610µJ (on), 1.2mJ (off)
  • Input Type: Standard
  • Gate Charge: 310nC
  • Td (on/off) @ 25°C: 23ns/157ns
  • Test Condition: 400V, 75A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 90ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-4
  • Supplier Device Package: TO-247-4L
패키지: TO-247-4
재고7,760
650V
200A
200A
2V @ 15V, 75A
536W
610µJ (on), 1.2mJ (off)
Standard
310nC
23ns/157ns
400V, 75A, 10 Ohm, 15V
90ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-4
TO-247-4L
NGTB50N120FL2WAG
ON Semiconductor

IGBT FIELD STOP 1.2KV TO247-4

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 200A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A
  • Power - Max: 536W
  • Switching Energy: 2.15mJ (on), 1.4mJ (off)
  • Input Type: Standard
  • Gate Charge: 313nC
  • Td (on/off) @ 25°C: 28ns/150ns
  • Test Condition: 600V, 50A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 281ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-4
  • Supplier Device Package: TO-247-4L
패키지: TO-247-4
재고5,760
1200V
200A
200A
2.6V @ 15V, 50A
536W
2.15mJ (on), 1.4mJ (off)
Standard
313nC
28ns/150ns
600V, 50A, 10 Ohm, 15V
281ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-4
TO-247-4L
NGTB40N135IHRWG
ON Semiconductor

IGBT 1350V 80A 394W TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1350V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A
  • Power - Max: 394W
  • Switching Energy: 1.3mJ (off)
  • Input Type: Standard
  • Gate Charge: 234nC
  • Td (on/off) @ 25°C: -/250ns
  • Test Condition: 600V, 40A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고4,544
1350V
80A
120A
2.7V @ 15V, 40A
394W
1.3mJ (off)
Standard
234nC
-/250ns
600V, 40A, 10 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
NGTB50N60SWG
ON Semiconductor

IGBT 600V 50A TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A
  • Power - Max: -
  • Switching Energy: 600µJ (off)
  • Input Type: Standard
  • Gate Charge: 135nC
  • Td (on/off) @ 25°C: 70ns/144ns
  • Test Condition: 400V, 50A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 376ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: TO-247-3
재고4,448
600V
100A
200A
2.6V @ 15V, 50A
-
600µJ (off)
Standard
135nC
70ns/144ns
400V, 50A, 10 Ohm, 15V
376ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3