페이지 11 - Rohm Semiconductor 제품 - 다이오드 - 정류기 - 단일

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
RBR2VWM40ATFTR	Rohm Semiconductor	DIODE SCHOTTKY 40V 2A PMDE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 620 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: PMDE Operating Temperature - Junction: 150°C	패키지: -	재고21,972	40 V	2A	620 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 40 V	-	Surface Mount	2-SMD, Flat Lead	PMDE	150°C
RFN5TF8SFHC9	Rohm Semiconductor	DIODE GEN PURP 800V 5A TO220NFM Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40 ns Current - Reverse Leakage @ Vr: 10 µA @ 800 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: TO-220NFM Operating Temperature - Junction: 150°C (Max)	패키지: -	재고1,479	800 V	5A	2.1 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	40 ns	10 µA @ 800 V	-	Through Hole	TO-220-2 Full Pack	TO-220NFM	150°C (Max)
RB088LAM-30TR	Rohm Semiconductor	DIODE SCHOTTKY 30V 5A PMDTM Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2.5 µA @ 30 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: PMDTM Operating Temperature - Junction: 150°C	패키지: -	재고7,209	30 V	5A	690 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	2.5 µA @ 30 V	-	Surface Mount	SOD-128	PMDTM	150°C
RBS3MM40BTR	Rohm Semiconductor	DIODE SCHOTTKY 20V 3A PMDU Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 450 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 600 µA @ 20 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: PMDU Operating Temperature - Junction: 125°C	패키지: -	재고33,579	20 V	3A	450 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	600 µA @ 20 V	-	Surface Mount	SOD-123F	PMDU	125°C
RBR3RSM40BTL1	Rohm Semiconductor	DIODE SCHOTTKY 40V 3A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 470 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 120 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A Operating Temperature - Junction: 150°C	패키지: -	재고11,892	40 V	3A	470 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	120 µA @ 40 V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A	150°C
RBS3MM40ATR	Rohm Semiconductor	DIODE SCHOTTKY 20V 3A PMDU Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 20 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: PMDU Operating Temperature - Junction: 125°C	패키지: -	Request a Quote	20 V	3A	490 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 20 V	-	Surface Mount	SOD-123F	PMDU	125°C
RB056LAM-40TFTR	Rohm Semiconductor	DIODE SCHOTTKY 40V 3A PMDTM Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: PMDTM Operating Temperature - Junction: 150°C (Max)	패키지: -	재고28,956	40 V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 40 V	-	Surface Mount	SOD-128	PMDTM	150°C (Max)
RBR1VWM60ATR	Rohm Semiconductor	DIODE SCHOTTKY 60V 1A PMDE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 75 µA @ 60 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: PMDE Operating Temperature - Junction: 150°C	패키지: -	재고16,389	60 V	1A	530 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	75 µA @ 60 V	-	Surface Mount	2-SMD, Flat Lead	PMDE	150°C
RB520S-30FSTE61	Rohm Semiconductor	DIODE SCHOTTKY SMD Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
RR268MM-600TR	Rohm Semiconductor	DIODE GEN PURP 400V 1A PMDU Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: PMDU Operating Temperature - Junction: 150°C (Max)	패키지: -	재고22,920	400 V	1A	980 mV @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 400 V	-	Surface Mount	SOD-123F	PMDU	150°C (Max)
RB510VM-30TE-17	Rohm Semiconductor	DIODE SCHOTTKY 30V 100MA UMD2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 460 mV @ 10 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 300 nA @ 10 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: UMD2 Operating Temperature - Junction: 150°C (Max)	패키지: -	재고30,987	30 V	100mA	460 mV @ 10 mA	Small Signal =< 200mA (Io), Any Speed	-	300 nA @ 10 V	-	Surface Mount	SC-90, SOD-323F	UMD2	150°C (Max)
RB160SS-30T2R	Rohm Semiconductor	DIODE SCHOTTKY 30V 1A KMD2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 35 µA @ 30 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 0603 (1608 Metric) Supplier Device Package: KMD2 Operating Temperature - Junction: 150°C	패키지: -	Request a Quote	30 V	1A	520 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	35 µA @ 30 V	-	Surface Mount	0603 (1608 Metric)	KMD2	150°C
RFN2L4SDDTE25	Rohm Semiconductor	DIODE GEN PURP 400V 1.5A PMDS Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Current - Reverse Leakage @ Vr: 1 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: PMDS Operating Temperature - Junction: 150°C	패키지: -	재고2,595	400 V	1.5A	1.2 V @ 1.5 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	1 µA @ 400 V	-	Surface Mount	DO-214AC, SMA	PMDS	150°C
RB058L150DDTE25	Rohm Semiconductor	DIODE SCHOTTKY 150V 3A PMDS Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3 µA @ 150 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: PMDS Operating Temperature - Junction: 150°C	패키지: -	재고690	150 V	3A	850 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	3 µA @ 150 V	-	Surface Mount	DO-214AC, SMA	PMDS	150°C
RBR3L30ADDTE25	Rohm Semiconductor	DIODE SCHOTTKY 30V 3A PMDS Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 30 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: PMDS Operating Temperature - Junction: 150°C	패키지: -	재고42	30 V	3A	580 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 30 V	-	Surface Mount	DO-214AC, SMA	PMDS	150°C
RBR2LAM40ATFTR	Rohm Semiconductor	DIODE SCHOTTKY 40V 2A PMDTM Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 80 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: PMDTM Operating Temperature - Junction: 150°C (Max)	패키지: -	재고18,834	40 V	2A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	80 µA @ 40 V	-	Surface Mount	SOD-128	PMDTM	150°C (Max)
RB031LA-30TR	Rohm Semiconductor	DIODE SCHOTTKY 30V PMDT Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
SCS310AMC	Rohm Semiconductor	DIODE SIL CARB 650V 10A TO220FM Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 50 µA @ 650 V Capacitance @ Vr, F: 500pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: TO-220FM Operating Temperature - Junction: 175°C (Max)	패키지: -	재고645	650 V	10A	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	500pF @ 1V, 1MHz	Through Hole	TO-220-2 Full Pack	TO-220FM	175°C (Max)
RB541VM-40TE-17	Rohm Semiconductor	DIODE SCHOTTKY 40V 200MA UMD2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 610 mV @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: UMD2 Operating Temperature - Junction: 125°C (Max)	패키지: -	재고9,171	40 V	200mA	610 mV @ 100 mA	Small Signal =< 200mA (Io), Any Speed	-	100 µA @ 40 V	-	Surface Mount	SC-90, SOD-323F	UMD2	125°C (Max)
BAS116HMFHT116	Rohm Semiconductor	DIODE GEN PURP 80V 215MA SSD3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80 V Current - Average Rectified (Io): 215mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Current - Reverse Leakage @ Vr: 5 nA @ 75 V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SSD3 Operating Temperature - Junction: 150°C (Max)	패키지: -	Request a Quote	80 V	215mA	1.25 V @ 150 mA	Standard Recovery >500ns, > 200mA (Io)	3 µs	5 nA @ 75 V	4pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SSD3	150°C (Max)
1SR154-400TFTE25	Rohm Semiconductor	ROHM Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: PMDS Operating Temperature - Junction: 150°C	패키지: -	Request a Quote	400 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 400 V	-	Surface Mount	DO-214AC, SMA	PMDS	150°C
RB060MM-40TFTR	Rohm Semiconductor	DIODE SCHOTTKY 40V 2A PMDU Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 560 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: PMDU Operating Temperature - Junction: 150°C (Max)	패키지: -	재고14,265	40 V	2A	560 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 40 V	-	Surface Mount	SOD-123F	PMDU	150°C (Max)
YQ3RSM10SDTFTL1	Rohm Semiconductor	TRENCH MOS STRUCTURE, 100V, 3A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 640 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 30 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A Operating Temperature - Junction: 175°C	패키지: -	재고12,000	100 V	3A	640 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	30 µA @ 100 V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A	175°C
RBR2L40ADDTE25	Rohm Semiconductor	DIODE SCHOTTKY 40V 2A PMDS Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 80 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: PMDS Operating Temperature - Junction: 150°C	패키지: -	재고1,104	40 V	2A	550 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	80 µA @ 40 V	-	Surface Mount	DO-214AC, SMA	PMDS	150°C
RSX078BM2SFNSTL	Rohm Semiconductor	200V 5A, TO-252, ULTRA LOW IR SB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 920 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 nA @ 200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 Operating Temperature - Junction: 175°C	패키지: -	Request a Quote	200 V	5A	920 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 nA @ 200 V	-	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252	175°C
RB168VWM150TR	Rohm Semiconductor	DIODE SCHOTTKY 150V 1A PMDE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 890 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 150 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: PMDE Operating Temperature - Junction: 175°C	패키지: -	재고8,733	150 V	1A	890 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 µA @ 150 V	-	Surface Mount	2-SMD, Flat Lead	PMDE	175°C
RB521S-40GTE61	Rohm Semiconductor	DIODE SCHOTTKY SMD Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
RFN3BGE6STL	Rohm Semiconductor	DIODE GEN PURP 600V 3A TO252 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max)	패키지: -	재고9	600 V	3A	1.55 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	10 µA @ 600 V	-	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252	150°C (Max)

RBR2VWM40ATFTR

Rohm Semiconductor

DIODE SCHOTTKY 40V 2A PMDE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Supplier Device Package: PMDE
Operating Temperature - Junction: 150°C

패키지: -

재고21,972

40 V

2A

620 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

50 µA @ 40 V

-

Surface Mount

2-SMD, Flat Lead

PMDE

150°C

RFN5TF8SFHC9

Rohm Semiconductor

DIODE GEN PURP 800V 5A TO220NFM

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: TO-220NFM
Operating Temperature - Junction: 150°C (Max)

패키지: -

재고1,479

800 V

5A

2.1 V @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

40 ns

10 µA @ 800 V

-

Through Hole

TO-220-2 Full Pack

TO-220NFM

150°C (Max)

RB088LAM-30TR

Rohm Semiconductor

DIODE SCHOTTKY 30V 5A PMDTM

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2.5 µA @ 30 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C

패키지: -

재고7,209

30 V

5A

690 mV @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

-

2.5 µA @ 30 V

-

Surface Mount

SOD-128

PMDTM

150°C

RBS3MM40BTR

Rohm Semiconductor

DIODE SCHOTTKY 20V 3A PMDU

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 600 µA @ 20 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: PMDU
Operating Temperature - Junction: 125°C

패키지: -

재고33,579

20 V

3A

450 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

600 µA @ 20 V

-

Surface Mount

SOD-123F

PMDU

125°C

RBR3RSM40BTL1

Rohm Semiconductor

DIODE SCHOTTKY 40V 3A TO277A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 120 µA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C

패키지: -

재고11,892

40 V

3A

470 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

120 µA @ 40 V

-

Surface Mount

TO-277, 3-PowerDFN

TO-277A

150°C

RBS3MM40ATR

Rohm Semiconductor

DIODE SCHOTTKY 20V 3A PMDU

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: PMDU
Operating Temperature - Junction: 125°C

패키지: -

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20 V

3A

490 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 20 V

-

Surface Mount

SOD-123F

PMDU

125°C

RB056LAM-40TFTR

Rohm Semiconductor

DIODE SCHOTTKY 40V 3A PMDTM

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C (Max)

패키지: -

재고28,956

40 V

3A

-

Fast Recovery =< 500ns, > 200mA (Io)

-

50 µA @ 40 V

-

Surface Mount

SOD-128

PMDTM

150°C (Max)

RBR1VWM60ATR

Rohm Semiconductor

DIODE SCHOTTKY 60V 1A PMDE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 75 µA @ 60 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Supplier Device Package: PMDE
Operating Temperature - Junction: 150°C

패키지: -

재고16,389

60 V

1A

530 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

75 µA @ 60 V

-

Surface Mount

2-SMD, Flat Lead

PMDE

150°C

RB520S-30FSTE61

Rohm Semiconductor

DIODE SCHOTTKY SMD

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

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-

RR268MM-600TR

Rohm Semiconductor

DIODE GEN PURP 400V 1A PMDU

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)

패키지: -

재고22,920

400 V

1A

980 mV @ 1 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 400 V

-

Surface Mount

SOD-123F

PMDU

150°C (Max)

RB510VM-30TE-17

Rohm Semiconductor

DIODE SCHOTTKY 30V 100MA UMD2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 10 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 300 nA @ 10 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Supplier Device Package: UMD2
Operating Temperature - Junction: 150°C (Max)

패키지: -

재고30,987

30 V

100mA

460 mV @ 10 mA

Small Signal =< 200mA (Io), Any Speed

-

300 nA @ 10 V

-

Surface Mount

SC-90, SOD-323F

UMD2

150°C (Max)

RB160SS-30T2R

Rohm Semiconductor

DIODE SCHOTTKY 30V 1A KMD2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 35 µA @ 30 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 0603 (1608 Metric)
Supplier Device Package: KMD2
Operating Temperature - Junction: 150°C

패키지: -

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30 V

1A

520 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

35 µA @ 30 V

-

Surface Mount

0603 (1608 Metric)

KMD2

150°C

RFN2L4SDDTE25

Rohm Semiconductor

DIODE GEN PURP 400V 1.5A PMDS

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1.5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C

패키지: -

재고2,595

400 V

1.5A

1.2 V @ 1.5 A

Fast Recovery =< 500ns, > 200mA (Io)

30 ns

1 µA @ 400 V

-

Surface Mount

DO-214AC, SMA

PMDS

150°C

RB058L150DDTE25

Rohm Semiconductor

DIODE SCHOTTKY 150V 3A PMDS

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3 µA @ 150 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C

패키지: -

재고690

150 V

3A

850 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

3 µA @ 150 V

-

Surface Mount

DO-214AC, SMA

PMDS

150°C

RBR3L30ADDTE25

Rohm Semiconductor

DIODE SCHOTTKY 30V 3A PMDS

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C

패키지: -

재고42

30 V

3A

580 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

50 µA @ 30 V

-

Surface Mount

DO-214AC, SMA

PMDS

150°C

RBR2LAM40ATFTR

Rohm Semiconductor

DIODE SCHOTTKY 40V 2A PMDTM

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 80 µA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C (Max)

패키지: -

재고18,834

40 V

2A

-

Fast Recovery =< 500ns, > 200mA (Io)

-

80 µA @ 40 V

-

Surface Mount

SOD-128

PMDTM

150°C (Max)

RB031LA-30TR

Rohm Semiconductor

DIODE SCHOTTKY 30V PMDT

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

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-

SCS310AMC

Rohm Semiconductor

DIODE SIL CARB 650V 10A TO220FM

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Capacitance @ Vr, F: 500pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: TO-220FM
Operating Temperature - Junction: 175°C (Max)

패키지: -

재고645

650 V

10A

1.5 V @ 10 A

No Recovery Time > 500mA (Io)

0 ns

50 µA @ 650 V

500pF @ 1V, 1MHz

Through Hole

TO-220-2 Full Pack

TO-220FM

175°C (Max)

RB541VM-40TE-17

Rohm Semiconductor

DIODE SCHOTTKY 40V 200MA UMD2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 100 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Supplier Device Package: UMD2
Operating Temperature - Junction: 125°C (Max)

패키지: -

재고9,171

40 V

200mA

610 mV @ 100 mA

Small Signal =< 200mA (Io), Any Speed

-

100 µA @ 40 V

-

Surface Mount

SC-90, SOD-323F

UMD2

125°C (Max)

BAS116HMFHT116

Rohm Semiconductor

DIODE GEN PURP 80V 215MA SSD3

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80 V
Current - Average Rectified (Io): 215mA
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SSD3
Operating Temperature - Junction: 150°C (Max)

패키지: -

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80 V

215mA

1.25 V @ 150 mA

Standard Recovery >500ns, > 200mA (Io)

3 µs

5 nA @ 75 V

4pF @ 0V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

SSD3

150°C (Max)

1SR154-400TFTE25

Rohm Semiconductor

ROHM

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C

패키지: -

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400 V

1A

1.1 V @ 1 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 400 V

-

Surface Mount

DO-214AC, SMA

PMDS

150°C

RB060MM-40TFTR

Rohm Semiconductor

DIODE SCHOTTKY 40V 2A PMDU

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)

패키지: -

재고14,265

40 V

2A

560 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 40 V

-

Surface Mount

SOD-123F

PMDU

150°C (Max)

YQ3RSM10SDTFTL1

Rohm Semiconductor

TRENCH MOS STRUCTURE, 100V, 3A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 30 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C

패키지: -

재고12,000

100 V

3A

640 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

30 µA @ 100 V

-

Surface Mount

TO-277, 3-PowerDFN

TO-277A

175°C

RBR2L40ADDTE25

Rohm Semiconductor

DIODE SCHOTTKY 40V 2A PMDS

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 80 µA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C

패키지: -

재고1,104

40 V

2A

550 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

80 µA @ 40 V

-

Surface Mount

DO-214AC, SMA

PMDS

150°C

RSX078BM2SFNSTL

Rohm Semiconductor

200V 5A, TO-252, ULTRA LOW IR SB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200 nA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: TO-252
Operating Temperature - Junction: 175°C

패키지: -

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200 V

5A

920 mV @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

-

200 nA @ 200 V

-

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

TO-252

175°C

RB168VWM150TR

Rohm Semiconductor

DIODE SCHOTTKY 150V 1A PMDE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C

패키지: -

재고8,733

150 V

1A

890 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

1 µA @ 150 V

-

Surface Mount

2-SMD, Flat Lead

PMDE

175°C

RB521S-40GTE61

Rohm Semiconductor

DIODE SCHOTTKY SMD

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

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-

RFN3BGE6STL

Rohm Semiconductor

DIODE GEN PURP 600V 3A TO252

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)

패키지: -

재고9

600 V

3A

1.55 V @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

30 ns

10 µA @ 600 V

-

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

TO-252

150°C (Max)