Rohm Semiconductor 제품 - 다이오드 - 정류기 - 단일 | Heisener Electronics
고객 문의
SalesDept@heisener.com +86-755-83210559 ext. 706
로그인/등록
Language Translation

* Please refer to the English Version as our Official Version.

BOM
카트 0

Rohm Semiconductor 제품 - 다이오드 - 정류기 - 단일

기록 1,270
페이지  1/46
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
RFV8BGE6STL
Rohm Semiconductor

DIODE GEN PURP 600V 8A TO252GE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 45 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252GE
  • Operating Temperature - Junction: 150°C
패키지: -
재고7,500
600 V
8A
2.8 V @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
45 ns
10 µA @ 600 V
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252GE
150°C
RBR5L30ADDTE25
Rohm Semiconductor

DIODE SCHOTTKY 30V 5A PMDS

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 540 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 30 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: PMDS
  • Operating Temperature - Junction: 150°C
패키지: -
재고846
30 V
5A
540 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 30 V
-
Surface Mount
DO-214AC, SMA
PMDS
150°C
SCS302AJTLL
Rohm Semiconductor

DIODE SIL CARB 650V 2.15A LPTL

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 2.15A
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2.15 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 10.8 µA @ 650 V
  • Capacitance @ Vr, F: 110pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: LPTL
  • Operating Temperature - Junction: 175°C (Max)
패키지: -
재고1,497
650 V
2.15A
1.5 V @ 2.15 A
No Recovery Time > 500mA (Io)
0 ns
10.8 µA @ 650 V
110pF @ 1V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
LPTL
175°C (Max)
SCS220AGC17
Rohm Semiconductor

DIODE SIC 650V 20A TO220ACFP

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 400 µA @ 600 V
  • Capacitance @ Vr, F: 730pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220ACFP
  • Operating Temperature - Junction: 175°C
패키지: -
재고2,220
650 V
20A
1.55 V @ 20 A
No Recovery Time > 500mA (Io)
0 ns
400 µA @ 600 V
730pF @ 1V, 1MHz
Through Hole
TO-220-2
TO-220ACFP
175°C
RBQ3RSM65BTL1
Rohm Semiconductor

DIODE SCHOTTKY 65V 3A TO277A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 65 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 570 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 90 µA @ 65 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A
  • Operating Temperature - Junction: 150°C
패키지: -
재고11,964
65 V
3A
570 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
90 µA @ 65 V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A
150°C
RB068MM-40TFTR
Rohm Semiconductor

DIODE SCHOTTKY 40V 2A PMDU

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 725 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 550 nA @ 40 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: PMDU
  • Operating Temperature - Junction: 150°C (Max)
패키지: -
재고1,443
40 V
2A
725 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
550 nA @ 40 V
-
Surface Mount
SOD-123F
PMDU
150°C (Max)
RB520VM-30FHTE-17
Rohm Semiconductor

DIODE SCHOTTKY 30V 200MA UMD2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 580 mV @ 200 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 µA @ 10 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SC-90, SOD-323F
  • Supplier Device Package: UMD2
  • Operating Temperature - Junction: 150°C (Max)
패키지: -
재고9,870
30 V
200mA
580 mV @ 200 mA
Small Signal =< 200mA (Io), Any Speed
-
1 µA @ 10 V
-
Surface Mount
SC-90, SOD-323F
UMD2
150°C (Max)
RFN20NS6SFHTL
Rohm Semiconductor

DIODE GEN PURP 600V 20A LPDS

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 60 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Capacitance @ Vr, F: 322pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: LPDS
  • Operating Temperature - Junction: 150°C (Max)
패키지: -
재고2,427
600 V
20A
1.55 V @ 20 A
Fast Recovery =< 500ns, > 200mA (Io)
60 ns
10 µA @ 600 V
322pF @ 0V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
LPDS
150°C (Max)
BAS21HMFHT116
Rohm Semiconductor

DIODE GEN PURP 200V 200MA SSD3

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 100 nA @ 200 V
  • Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SSD3
  • Operating Temperature - Junction: 150°C (Max)
패키지: -
Request a Quote
200 V
200mA
1.25 V @ 200 mA
Small Signal =< 200mA (Io), Any Speed
50 ns
100 nA @ 200 V
2.5pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SSD3
150°C (Max)
RB461FMT106
Rohm Semiconductor

DIODE SCHOTTKY 20V 700MA SOT323

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20 V
  • Current - Average Rectified (Io): 700mA
  • Voltage - Forward (Vf) (Max) @ If: 490 mV @ 700 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 µA @ 20 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
  • Operating Temperature - Junction: 125°C
패키지: -
재고17,859
20 V
700mA
490 mV @ 700 mA
Fast Recovery =< 500ns, > 200mA (Io)
-
200 µA @ 20 V
-
Surface Mount
SC-70, SOT-323
SOT-323
125°C
RFUH10TF6SFHC9
Rohm Semiconductor

DIODE GEN PURP 600V 10A TO220NFM

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: TO-220NFM
  • Operating Temperature - Junction: 150°C (Max)
패키지: -
재고1,278
600 V
10A
2.8 V @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
25 ns
10 µA @ 600 V
-
Through Hole
TO-220-2 Full Pack
TO-220NFM
150°C (Max)
RB168MM150TFTR
Rohm Semiconductor

DIODE SCHOTTKY 150V 1A PMDU

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 840 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 4 µA @ 150 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: PMDU
  • Operating Temperature - Junction: 150°C (Max)
패키지: -
재고41,103
150 V
1A
840 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
4 µA @ 150 V
-
Surface Mount
SOD-123F
PMDU
150°C (Max)
RBQ3RSM65BTFTL1
Rohm Semiconductor

DIODE SCHOTTKY 65V 3A TO277A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 65 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 570 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 90 µA @ 65 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A
  • Operating Temperature - Junction: 150°C
패키지: -
재고12,000
65 V
3A
570 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
90 µA @ 65 V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A
150°C
BAS116HYFHT116
Rohm Semiconductor

DIODE GEN PURP 80V 215MA SOT23

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 80 V
  • Current - Average Rectified (Io): 215mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3 µs
  • Current - Reverse Leakage @ Vr: 5 nA @ 75 V
  • Capacitance @ Vr, F: 4pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
  • Operating Temperature - Junction: 150°C
패키지: -
재고2,625
80 V
215mA
1.25 V @ 150 mA
Standard Recovery >500ns, > 200mA (Io)
3 µs
5 nA @ 75 V
4pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
150°C
RB521S-40FHTE61
Rohm Semiconductor

DIODE SCHOTTKY SMD

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
SCS220AEGC11
Rohm Semiconductor

DIODE SIL CARBIDE 650V 20A TO247

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 400 µA @ 600 V
  • Capacitance @ Vr, F: 730pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
  • Operating Temperature - Junction: 175°C
패키지: -
재고1,104
650 V
20A
1.55 V @ 20 A
No Recovery Time > 500mA (Io)
0 ns
400 µA @ 600 V
730pF @ 1V, 1MHz
Through Hole
TO-247-3
TO-247
175°C
RSX048LAP2STR
Rohm Semiconductor

200V 3A, SINGLE, PMDTM, ULTRA LO

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 870 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 nA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: SOD-128
  • Operating Temperature - Junction: 175°C
패키지: -
Request a Quote
200 V
3A
870 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
200 nA @ 200 V
-
Surface Mount
SOD-128
SOD-128
175°C
RRD07MM4STR
Rohm Semiconductor

DIODE GEN PURP 400V 700MA PMDU

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 700mA
  • Voltage - Forward (Vf) (Max) @ If: 980 mV @ 700 mA
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 µA @ 400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: PMDU
  • Operating Temperature - Junction: 150°C (Max)
패키지: -
재고18,063
400 V
700mA
980 mV @ 700 mA
Standard Recovery >500ns, > 200mA (Io)
-
1 µA @ 400 V
-
Surface Mount
SOD-123F
PMDU
150°C (Max)
RBR3L40BDDTE25
Rohm Semiconductor

DIODE SCHOTTKY 40V 3A PMDS

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 620 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 80 µA @ 40 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: PMDS
  • Operating Temperature - Junction: 150°C
패키지: -
재고5,523
40 V
3A
620 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
80 µA @ 40 V
-
Surface Mount
DO-214AC, SMA
PMDS
150°C
RB540VM-40FHTE-17
Rohm Semiconductor

DIODE SCHOTTKY 40V 200MA UMD2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 710 mV @ 100 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 15 µA @ 40 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SC-90, SOD-323F
  • Supplier Device Package: UMD2
  • Operating Temperature - Junction: 150°C (Max)
패키지: -
재고4,770
40 V
200mA
710 mV @ 100 mA
Small Signal =< 200mA (Io), Any Speed
-
15 µA @ 40 V
-
Surface Mount
SC-90, SOD-323F
UMD2
150°C (Max)
RB060MM-30TFTR
Rohm Semiconductor

DIODE SCHOTTKY 30V 2A PMDU

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 30 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: PMDU
  • Operating Temperature - Junction: 150°C (Max)
패키지: -
재고12,240
30 V
2A
490 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
50 µA @ 30 V
-
Surface Mount
SOD-123F
PMDU
150°C (Max)
RB511VM-40TE-17
Rohm Semiconductor

DIODE SCHOTTKY 40V 100MA UMD2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 410 mV @ 10 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 25 µA @ 40 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SC-90, SOD-323F
  • Supplier Device Package: UMD2
  • Operating Temperature - Junction: 125°C (Max)
패키지: -
재고27,642
40 V
100mA
410 mV @ 10 mA
Small Signal =< 200mA (Io), Any Speed
-
25 µA @ 40 V
-
Surface Mount
SC-90, SOD-323F
UMD2
125°C (Max)
RF1005TF6SFHC9
Rohm Semiconductor

DIODE GEN PURP 600V 10A TO220NFM

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 40 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: TO-220NFM
  • Operating Temperature - Junction: 150°C (Max)
패키지: -
재고2,862
600 V
10A
1.7 V @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
40 ns
10 µA @ 600 V
-
Through Hole
TO-220-2 Full Pack
TO-220NFM
150°C (Max)
RB751S-40FVTE61
Rohm Semiconductor

DIODE SCHOTTKY SMD

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
RFUH10NS4SFHTL
Rohm Semiconductor

DIODE GEN PURP 430V 10A LPDS

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 430 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 430 V
  • Capacitance @ Vr, F: 150pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: LPDS
  • Operating Temperature - Junction: 150°C (Max)
패키지: -
Request a Quote
430 V
10A
1.7 V @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
25 ns
10 µA @ 430 V
150pF @ 0V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
LPDS
150°C (Max)
RB053LA-30TR
Rohm Semiconductor

DIODE SCHOTTKY 30V 3A PMDS

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
RBR3MM40ATFTR
Rohm Semiconductor

DIODE SCHOTTKY 40V 3A PMDU

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 620 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 80 µA @ 40 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: PMDU
  • Operating Temperature - Junction: 150°C (Max)
패키지: -
재고63,957
40 V
3A
620 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
80 µA @ 40 V
-
Surface Mount
SOD-123F
PMDU
150°C (Max)
BAS16HYT116
Rohm Semiconductor

DIODE GEN PURP 80V 215MA SOT23

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 80 V
  • Current - Average Rectified (Io): 215mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 4 ns
  • Current - Reverse Leakage @ Vr: 500 nA @ 80 V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
  • Operating Temperature - Junction: 150°C
패키지: -
재고5,562
80 V
215mA
1.25 V @ 150 mA
Fast Recovery =< 500ns, > 200mA (Io)
4 ns
500 nA @ 80 V
2pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
150°C