페이지 24 - Rohm Semiconductor 제품 - 다이오드 - 정류기 - 단일

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
RSX051VYM30FHTR	Rohm Semiconductor	DIODE SCHOTTKY 30V 500MA TUMD2M Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 390 mV @ 500 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 9.6 ns Current - Reverse Leakage @ Vr: 200 µA @ 30 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: TUMD2M Operating Temperature - Junction: 150°C (Max)	패키지: -	재고43,608	30 V	500mA	390 mV @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	9.6 ns	200 µA @ 30 V	-	Surface Mount	2-SMD, Flat Lead	TUMD2M	150°C (Max)
RRD20TJ10SGC9	Rohm Semiconductor	DIODE GEN PURP 1KV 20A TO220ACFP Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 20 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: TO-220ACFP Operating Temperature - Junction: 150°C	패키지: -	재고792	1000 V	20A	1.05 V @ 20 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 1000 V	-	Through Hole	TO-220-2 Full Pack	TO-220ACFP	150°C
RB508FM-40FHT106	Rohm Semiconductor	DIODE SCHOTTKY 40V 80MA SOT323 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 80mA Voltage - Forward (Vf) (Max) @ If: 590 mV @ 40 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 35 nA @ 30 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323 Operating Temperature - Junction: 150°C	패키지: -	재고7,146	40 V	80mA	590 mV @ 40 mA	Small Signal =< 200mA (Io), Any Speed	-	35 nA @ 30 V	-	Surface Mount	SC-70, SOT-323	SOT-323	150°C
RBR2MM40BTFTR	Rohm Semiconductor	DIODE SCHOTTKY 40V 2A PMDU Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 80 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: PMDU Operating Temperature - Junction: 150°C (Max)	패키지: -	재고16,365	40 V	2A	550 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	80 µA @ 40 V	-	Surface Mount	SOD-123F	PMDU	150°C (Max)
RF201L4SDDTE25	Rohm Semiconductor	DIODE GEN PURP 400V 1.5A PMDS Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Current - Reverse Leakage @ Vr: 1 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: PMDS Operating Temperature - Junction: 150°C	패키지: -	재고4,857	400 V	1.5A	1.2 V @ 1.5 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	1 µA @ 400 V	-	Surface Mount	DO-214AC, SMA	PMDS	150°C
RF505TF6SFHC9	Rohm Semiconductor	DIODE GEN PURP 600V 5A TO220NFM Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: TO-220NFM Operating Temperature - Junction: 150°C (Max)	패키지: -	재고2,781	600 V	5A	1.7 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	10 µA @ 600 V	-	Through Hole	TO-220-2 Full Pack	TO-220NFM	150°C (Max)
RB070MM-30TFTR	Rohm Semiconductor	DIODE SCHOTTKY 30V 1.5A PMDU Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 30 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: PMDU Operating Temperature - Junction: 150°C (Max)	패키지: -	재고7,854	30 V	1.5A	490 mV @ 1.5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 30 V	-	Surface Mount	SOD-123F	PMDU	150°C (Max)
RB078BM10SFNSTL	Rohm Semiconductor	100V 5A, TO-252, ULTRA LOW IR SB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 740 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 6.4 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 2-PLCC Supplier Device Package: 2-SMD Operating Temperature - Junction: 175°C	패키지: -	재고7,500	100 V	5A	740 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	6.4 µA @ 100 V	-	Surface Mount	2-PLCC	2-SMD	175°C
SCS312AHGC9	Rohm Semiconductor	DIODE SIL CARB 650V 12A TO220ACP Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: - Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 60 µA @ 650 V Capacitance @ Vr, F: 600pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220ACP Operating Temperature - Junction: 175°C (Max)	패키지: -	재고129	650 V	12A	-	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 650 V	600pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220ACP	175°C (Max)
1SS400UCTE61	Rohm Semiconductor	DIODE GENERAL PURPOSE SMD Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
RB058LAM100TFTR	Rohm Semiconductor	DIODE SCHOTTKY 100V 3A PMDTM Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3 µA @ 150 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: PMDTM Operating Temperature - Junction: 150°C (Max)	패키지: -	재고91,050	100 V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	3 µA @ 150 V	-	Surface Mount	SOD-128	PMDTM	150°C (Max)
RB521S-30FVTE61	Rohm Semiconductor	DIODE SCHOTTKY SMD Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
RB520VM-40FHTE-17	Rohm Semiconductor	DIODE SCHOTTKY 40V 200MA UMD2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: UMD2 Operating Temperature - Junction: 150°C (Max)	패키지: -	재고3,255	40 V	200mA	550 mV @ 100 mA	Small Signal =< 200mA (Io), Any Speed	-	10 µA @ 40 V	-	Surface Mount	SC-90, SOD-323F	UMD2	150°C (Max)
RBQ5RSM10BTL1	Rohm Semiconductor	DIODE SCHOTTKY 100V 5A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 140 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A Operating Temperature - Junction: 150°C	패키지: -	재고11,727	100 V	5A	700 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	140 µA @ 100 V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A	150°C
YQ8RSM10SDTFTL1	Rohm Semiconductor	TRENCH MOS STRUCTURE, 100V, 8A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 670 mV @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 60 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A Operating Temperature - Junction: 175°C	패키지: -	재고12,000	100 V	8A	670 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	60 µA @ 100 V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A	175°C
RB520S-30ZTTE61	Rohm Semiconductor	DIODE SCHOTTKY SMD Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
1SS400G9JTE61	Rohm Semiconductor	DIODE GENERAL PURPOSE SMD Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
RFN2LAM4STFTR	Rohm Semiconductor	DIODE GEN PURP 400V 1.5A PMDTM Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Current - Reverse Leakage @ Vr: 1 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: PMDTM Operating Temperature - Junction: 150°C (Max)	패키지: -	재고18,795	400 V	1.5A	1.2 V @ 1.5 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	1 µA @ 400 V	-	Surface Mount	SOD-128	PMDTM	150°C (Max)
RB521ZS-30T2R_1	Rohm Semiconductor	DIODE SCHOTTKY 30V 100MA GMD2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 370 mV @ 10 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 7 µA @ 10 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 0201 (0603 Metric) Supplier Device Package: GMD2 Operating Temperature - Junction: 150°C	패키지: -	Request a Quote	30 V	100mA	370 mV @ 10 mA	Small Signal =< 200mA (Io), Any Speed	-	7 µA @ 10 V	-	Surface Mount	0201 (0603 Metric)	GMD2	150°C
RB400VYM-50FHTR	Rohm Semiconductor	DIODE SCHOTTKY 40V 500MA TUMD2M Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 7.35 ns Current - Reverse Leakage @ Vr: 50 µA @ 30 V Capacitance @ Vr, F: 130pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: TUMD2M Operating Temperature - Junction: 150°C (Max)	패키지: -	재고17,991	40 V	500mA	550 mV @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	7.35 ns	50 µA @ 30 V	130pF @ 0V, 1MHz	Surface Mount	2-SMD, Flat Lead	TUMD2M	150°C (Max)
RBQ5RSM65BTFTL1	Rohm Semiconductor	DIODE SCHOTTKY 65V 5A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 65 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 660 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 90 µA @ 65 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A Operating Temperature - Junction: 150°C	패키지: -	재고12,000	65 V	5A	660 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	90 µA @ 65 V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A	150°C
SCS315AJTLL	Rohm Semiconductor	DIODE SIL CARBIDE 650V 15A LPTL Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 75 µA @ 650 V Capacitance @ Vr, F: 750pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: LPTL Operating Temperature - Junction: 175°C (Max)	패키지: -	재고1,200	650 V	15A	1.5 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	75 µA @ 650 V	750pF @ 1V, 1MHz	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	LPTL	175°C (Max)
RB511VM-30FHTE-17	Rohm Semiconductor	DIODE SCHOTTKY 30V 100MA UMD2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 370 mV @ 10 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 7 µA @ 10 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: UMD2 Operating Temperature - Junction: 125°C (Max)	패키지: -	Request a Quote	30 V	100mA	370 mV @ 10 mA	Small Signal =< 200mA (Io), Any Speed	-	7 µA @ 10 V	-	Surface Mount	SC-90, SOD-323F	UMD2	125°C (Max)
RF302LAM2STFTR	Rohm Semiconductor	DIODE GEN PURP 200V 3A PMDTM Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 920 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: PMDTM Operating Temperature - Junction: 150°C (Max)	패키지: -	재고41,106	200 V	3A	920 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	10 µA @ 200 V	-	Surface Mount	SOD-128	PMDTM	150°C (Max)
RFN10BM3SFHTL	Rohm Semiconductor	DIODE GEN PURP 350V 10A TO252 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 350 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Current - Reverse Leakage @ Vr: 10 µA @ 350 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max)	패키지: -	재고13,785	350 V	10A	1.5 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	10 µA @ 350 V	-	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252	150°C (Max)
RB520S-30GTE61	Rohm Semiconductor	DIODE SCHOTTKY SMD Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
RBR5L30BDDTE25	Rohm Semiconductor	DIODE SCHOTTKY 30V 5A PMDS Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 490 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150 µA @ 30 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: PMDS Operating Temperature - Junction: 150°C	패키지: -	재고34,266	30 V	5A	490 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	150 µA @ 30 V	-	Surface Mount	DO-214AC, SMA	PMDS	150°C
RSX058LAP2STR	Rohm Semiconductor	200V 3A, SINGLE, PMDTM, ULTRA LO Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 920 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 nA @ 200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: SOD-128 Operating Temperature - Junction: 175°C	패키지: -	재고8,445	200 V	3A	920 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 nA @ 200 V	-	Surface Mount	SOD-128	SOD-128	175°C

RSX051VYM30FHTR

Rohm Semiconductor

DIODE SCHOTTKY 30V 500MA TUMD2M

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 390 mV @ 500 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 9.6 ns
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Supplier Device Package: TUMD2M
Operating Temperature - Junction: 150°C (Max)

패키지: -

재고43,608

30 V

500mA

390 mV @ 500 mA

Fast Recovery =< 500ns, > 200mA (Io)

9.6 ns

200 µA @ 30 V

-

Surface Mount

2-SMD, Flat Lead

TUMD2M

150°C (Max)

RRD20TJ10SGC9

Rohm Semiconductor

DIODE GEN PURP 1KV 20A TO220ACFP

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 20 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: TO-220ACFP
Operating Temperature - Junction: 150°C

패키지: -

재고792

1000 V

20A

1.05 V @ 20 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 1000 V

-

Through Hole

TO-220-2 Full Pack

TO-220ACFP

150°C

RB508FM-40FHT106

Rohm Semiconductor

DIODE SCHOTTKY 40V 80MA SOT323

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 80mA
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 40 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 35 nA @ 30 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
Operating Temperature - Junction: 150°C

패키지: -

재고7,146

40 V

80mA

590 mV @ 40 mA

Small Signal =< 200mA (Io), Any Speed

-

35 nA @ 30 V

-

Surface Mount

SC-70, SOT-323

SOT-323

150°C

RBR2MM40BTFTR

Rohm Semiconductor

DIODE SCHOTTKY 40V 2A PMDU

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 80 µA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)

패키지: -

재고16,365

40 V

2A

550 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

80 µA @ 40 V

-

Surface Mount

SOD-123F

PMDU

150°C (Max)

RF201L4SDDTE25

Rohm Semiconductor

DIODE GEN PURP 400V 1.5A PMDS

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1.5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C

패키지: -

재고4,857

400 V

1.5A

1.2 V @ 1.5 A

Fast Recovery =< 500ns, > 200mA (Io)

30 ns

1 µA @ 400 V

-

Surface Mount

DO-214AC, SMA

PMDS

150°C

RF505TF6SFHC9

Rohm Semiconductor

DIODE GEN PURP 600V 5A TO220NFM

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: TO-220NFM
Operating Temperature - Junction: 150°C (Max)

패키지: -

재고2,781

600 V

5A

1.7 V @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

30 ns

10 µA @ 600 V

-

Through Hole

TO-220-2 Full Pack

TO-220NFM

150°C (Max)

RB070MM-30TFTR

Rohm Semiconductor

DIODE SCHOTTKY 30V 1.5A PMDU

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1.5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)

패키지: -

재고7,854

30 V

1.5A

490 mV @ 1.5 A

Fast Recovery =< 500ns, > 200mA (Io)

-

50 µA @ 30 V

-

Surface Mount

SOD-123F

PMDU

150°C (Max)

RB078BM10SFNSTL

Rohm Semiconductor

100V 5A, TO-252, ULTRA LOW IR SB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 6.4 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 2-PLCC
Supplier Device Package: 2-SMD
Operating Temperature - Junction: 175°C

패키지: -

재고7,500

100 V

5A

740 mV @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

-

6.4 µA @ 100 V

-

Surface Mount

2-PLCC

2-SMD

175°C

SCS312AHGC9

Rohm Semiconductor

DIODE SIL CARB 650V 12A TO220ACP

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: -
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Capacitance @ Vr, F: 600pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220ACP
Operating Temperature - Junction: 175°C (Max)

패키지: -

재고129

650 V

12A

-

No Recovery Time > 500mA (Io)

0 ns

60 µA @ 650 V

600pF @ 1V, 1MHz

Through Hole

TO-220-2

TO-220ACP

175°C (Max)

1SS400UCTE61

Rohm Semiconductor

DIODE GENERAL PURPOSE SMD

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

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-

RB058LAM100TFTR

Rohm Semiconductor

DIODE SCHOTTKY 100V 3A PMDTM

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3 µA @ 150 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C (Max)

패키지: -

재고91,050

100 V

3A

-

Fast Recovery =< 500ns, > 200mA (Io)

-

3 µA @ 150 V

-

Surface Mount

SOD-128

PMDTM

150°C (Max)

RB521S-30FVTE61

Rohm Semiconductor

DIODE SCHOTTKY SMD

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

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-

RB520VM-40FHTE-17

Rohm Semiconductor

DIODE SCHOTTKY 40V 200MA UMD2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Supplier Device Package: UMD2
Operating Temperature - Junction: 150°C (Max)

패키지: -

재고3,255

40 V

200mA

550 mV @ 100 mA

Small Signal =< 200mA (Io), Any Speed

-

10 µA @ 40 V

-

Surface Mount

SC-90, SOD-323F

UMD2

150°C (Max)

RBQ5RSM10BTL1

Rohm Semiconductor

DIODE SCHOTTKY 100V 5A TO277A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 140 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C

패키지: -

재고11,727

100 V

5A

700 mV @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

-

140 µA @ 100 V

-

Surface Mount

TO-277, 3-PowerDFN

TO-277A

150°C

YQ8RSM10SDTFTL1

Rohm Semiconductor

TRENCH MOS STRUCTURE, 100V, 8A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 60 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C

패키지: -

재고12,000

100 V

8A

670 mV @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

-

60 µA @ 100 V

-

Surface Mount

TO-277, 3-PowerDFN

TO-277A

175°C

RB520S-30ZTTE61

Rohm Semiconductor

DIODE SCHOTTKY SMD

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

Request a Quote

-

1SS400G9JTE61

Rohm Semiconductor

DIODE GENERAL PURPOSE SMD

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

Request a Quote

-

RFN2LAM4STFTR

Rohm Semiconductor

DIODE GEN PURP 400V 1.5A PMDTM

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1.5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C (Max)

패키지: -

재고18,795

400 V

1.5A

1.2 V @ 1.5 A

Fast Recovery =< 500ns, > 200mA (Io)

30 ns

1 µA @ 400 V

-

Surface Mount

SOD-128

PMDTM

150°C (Max)

RB521ZS-30T2R_1

Rohm Semiconductor

DIODE SCHOTTKY 30V 100MA GMD2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 10 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 7 µA @ 10 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Supplier Device Package: GMD2
Operating Temperature - Junction: 150°C

패키지: -

Request a Quote

30 V

100mA

370 mV @ 10 mA

Small Signal =< 200mA (Io), Any Speed

-

7 µA @ 10 V

-

Surface Mount

0201 (0603 Metric)

GMD2

150°C

RB400VYM-50FHTR

Rohm Semiconductor

DIODE SCHOTTKY 40V 500MA TUMD2M

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 7.35 ns
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
Capacitance @ Vr, F: 130pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Supplier Device Package: TUMD2M
Operating Temperature - Junction: 150°C (Max)

패키지: -

재고17,991

40 V

500mA

550 mV @ 500 mA

Fast Recovery =< 500ns, > 200mA (Io)

7.35 ns

50 µA @ 30 V

130pF @ 0V, 1MHz

Surface Mount

2-SMD, Flat Lead

TUMD2M

150°C (Max)

RBQ5RSM65BTFTL1

Rohm Semiconductor

DIODE SCHOTTKY 65V 5A TO277A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 65 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 90 µA @ 65 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C

패키지: -

재고12,000

65 V

5A

660 mV @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

-

90 µA @ 65 V

-

Surface Mount

TO-277, 3-PowerDFN

TO-277A

150°C

SCS315AJTLL

Rohm Semiconductor

DIODE SIL CARBIDE 650V 15A LPTL

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 75 µA @ 650 V
Capacitance @ Vr, F: 750pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: LPTL
Operating Temperature - Junction: 175°C (Max)

패키지: -

재고1,200

650 V

15A

1.5 V @ 15 A

No Recovery Time > 500mA (Io)

0 ns

75 µA @ 650 V

750pF @ 1V, 1MHz

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

LPTL

175°C (Max)

RB511VM-30FHTE-17

Rohm Semiconductor

DIODE SCHOTTKY 30V 100MA UMD2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 10 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 7 µA @ 10 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Supplier Device Package: UMD2
Operating Temperature - Junction: 125°C (Max)

패키지: -

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30 V

100mA

370 mV @ 10 mA

Small Signal =< 200mA (Io), Any Speed

-

7 µA @ 10 V

-

Surface Mount

SC-90, SOD-323F

UMD2

125°C (Max)

RF302LAM2STFTR

Rohm Semiconductor

DIODE GEN PURP 200V 3A PMDTM

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C (Max)

패키지: -

재고41,106

200 V

3A

920 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

25 ns

10 µA @ 200 V

-

Surface Mount

SOD-128

PMDTM

150°C (Max)

RFN10BM3SFHTL

Rohm Semiconductor

DIODE GEN PURP 350V 10A TO252

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 350 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Current - Reverse Leakage @ Vr: 10 µA @ 350 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)

패키지: -

재고13,785

350 V

10A

1.5 V @ 10 A

Fast Recovery =< 500ns, > 200mA (Io)

30 ns

10 µA @ 350 V

-

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

TO-252

150°C (Max)

RB520S-30GTE61

Rohm Semiconductor

DIODE SCHOTTKY SMD

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

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-

RBR5L30BDDTE25

Rohm Semiconductor

DIODE SCHOTTKY 30V 5A PMDS

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 150 µA @ 30 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C

패키지: -

재고34,266

30 V

5A

490 mV @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

-

150 µA @ 30 V

-

Surface Mount

DO-214AC, SMA

PMDS

150°C

RSX058LAP2STR

Rohm Semiconductor

200V 3A, SINGLE, PMDTM, ULTRA LO

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: SOD-128
Operating Temperature - Junction: 175°C

패키지: -

재고8,445

200 V

3A

920 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 nA @ 200 V

-

Surface Mount

SOD-128

175°C