페이지 24 - Rohm Semiconductor 제품 - 다이오드 - 정류기 - 단일 | Heisener Electronics
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Rohm Semiconductor 제품 - 다이오드 - 정류기 - 단일

기록 1,270
페이지  24/46
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
RSX051VYM30FHTR
Rohm Semiconductor

DIODE SCHOTTKY 30V 500MA TUMD2M

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 390 mV @ 500 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 9.6 ns
  • Current - Reverse Leakage @ Vr: 200 µA @ 30 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, Flat Lead
  • Supplier Device Package: TUMD2M
  • Operating Temperature - Junction: 150°C (Max)
패키지: -
재고43,608
30 V
500mA
390 mV @ 500 mA
Fast Recovery =< 500ns, > 200mA (Io)
9.6 ns
200 µA @ 30 V
-
Surface Mount
2-SMD, Flat Lead
TUMD2M
150°C (Max)
RRD20TJ10SGC9
Rohm Semiconductor

DIODE GEN PURP 1KV 20A TO220ACFP

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 20 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: TO-220ACFP
  • Operating Temperature - Junction: 150°C
패키지: -
재고792
1000 V
20A
1.05 V @ 20 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 1000 V
-
Through Hole
TO-220-2 Full Pack
TO-220ACFP
150°C
RB508FM-40FHT106
Rohm Semiconductor

DIODE SCHOTTKY 40V 80MA SOT323

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 80mA
  • Voltage - Forward (Vf) (Max) @ If: 590 mV @ 40 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 35 nA @ 30 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
  • Operating Temperature - Junction: 150°C
패키지: -
재고7,146
40 V
80mA
590 mV @ 40 mA
Small Signal =< 200mA (Io), Any Speed
-
35 nA @ 30 V
-
Surface Mount
SC-70, SOT-323
SOT-323
150°C
RBR2MM40BTFTR
Rohm Semiconductor

DIODE SCHOTTKY 40V 2A PMDU

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 80 µA @ 40 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: PMDU
  • Operating Temperature - Junction: 150°C (Max)
패키지: -
재고16,365
40 V
2A
550 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
80 µA @ 40 V
-
Surface Mount
SOD-123F
PMDU
150°C (Max)
RF201L4SDDTE25
Rohm Semiconductor

DIODE GEN PURP 400V 1.5A PMDS

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1.5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: PMDS
  • Operating Temperature - Junction: 150°C
패키지: -
재고4,857
400 V
1.5A
1.2 V @ 1.5 A
Fast Recovery =< 500ns, > 200mA (Io)
30 ns
1 µA @ 400 V
-
Surface Mount
DO-214AC, SMA
PMDS
150°C
RF505TF6SFHC9
Rohm Semiconductor

DIODE GEN PURP 600V 5A TO220NFM

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: TO-220NFM
  • Operating Temperature - Junction: 150°C (Max)
패키지: -
재고2,781
600 V
5A
1.7 V @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
30 ns
10 µA @ 600 V
-
Through Hole
TO-220-2 Full Pack
TO-220NFM
150°C (Max)
RB070MM-30TFTR
Rohm Semiconductor

DIODE SCHOTTKY 30V 1.5A PMDU

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1.5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 30 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: PMDU
  • Operating Temperature - Junction: 150°C (Max)
패키지: -
재고7,854
30 V
1.5A
490 mV @ 1.5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
50 µA @ 30 V
-
Surface Mount
SOD-123F
PMDU
150°C (Max)
RB078BM10SFNSTL
Rohm Semiconductor

100V 5A, TO-252, ULTRA LOW IR SB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 740 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 6.4 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: 2-PLCC
  • Supplier Device Package: 2-SMD
  • Operating Temperature - Junction: 175°C
패키지: -
재고7,500
100 V
5A
740 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
6.4 µA @ 100 V
-
Surface Mount
2-PLCC
2-SMD
175°C
SCS312AHGC9
Rohm Semiconductor

DIODE SIL CARB 650V 12A TO220ACP

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 60 µA @ 650 V
  • Capacitance @ Vr, F: 600pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220ACP
  • Operating Temperature - Junction: 175°C (Max)
패키지: -
재고129
650 V
12A
-
No Recovery Time > 500mA (Io)
0 ns
60 µA @ 650 V
600pF @ 1V, 1MHz
Through Hole
TO-220-2
TO-220ACP
175°C (Max)
1SS400UCTE61
Rohm Semiconductor

DIODE GENERAL PURPOSE SMD

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
RB058LAM100TFTR
Rohm Semiconductor

DIODE SCHOTTKY 100V 3A PMDTM

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 3 µA @ 150 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: PMDTM
  • Operating Temperature - Junction: 150°C (Max)
패키지: -
재고91,050
100 V
3A
-
Fast Recovery =< 500ns, > 200mA (Io)
-
3 µA @ 150 V
-
Surface Mount
SOD-128
PMDTM
150°C (Max)
RB521S-30FVTE61
Rohm Semiconductor

DIODE SCHOTTKY SMD

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
RB520VM-40FHTE-17
Rohm Semiconductor

DIODE SCHOTTKY 40V 200MA UMD2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 40 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SC-90, SOD-323F
  • Supplier Device Package: UMD2
  • Operating Temperature - Junction: 150°C (Max)
패키지: -
재고3,255
40 V
200mA
550 mV @ 100 mA
Small Signal =< 200mA (Io), Any Speed
-
10 µA @ 40 V
-
Surface Mount
SC-90, SOD-323F
UMD2
150°C (Max)
RBQ5RSM10BTL1
Rohm Semiconductor

DIODE SCHOTTKY 100V 5A TO277A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 140 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A
  • Operating Temperature - Junction: 150°C
패키지: -
재고11,727
100 V
5A
700 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
140 µA @ 100 V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A
150°C
YQ8RSM10SDTFTL1
Rohm Semiconductor

TRENCH MOS STRUCTURE, 100V, 8A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 670 mV @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 60 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A
  • Operating Temperature - Junction: 175°C
패키지: -
재고12,000
100 V
8A
670 mV @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
-
60 µA @ 100 V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A
175°C
RB520S-30ZTTE61
Rohm Semiconductor

DIODE SCHOTTKY SMD

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
1SS400G9JTE61
Rohm Semiconductor

DIODE GENERAL PURPOSE SMD

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
RFN2LAM4STFTR
Rohm Semiconductor

DIODE GEN PURP 400V 1.5A PMDTM

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1.5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: PMDTM
  • Operating Temperature - Junction: 150°C (Max)
패키지: -
재고18,795
400 V
1.5A
1.2 V @ 1.5 A
Fast Recovery =< 500ns, > 200mA (Io)
30 ns
1 µA @ 400 V
-
Surface Mount
SOD-128
PMDTM
150°C (Max)
RB521ZS-30T2R_1
Rohm Semiconductor

DIODE SCHOTTKY 30V 100MA GMD2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 370 mV @ 10 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 7 µA @ 10 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: 0201 (0603 Metric)
  • Supplier Device Package: GMD2
  • Operating Temperature - Junction: 150°C
패키지: -
Request a Quote
30 V
100mA
370 mV @ 10 mA
Small Signal =< 200mA (Io), Any Speed
-
7 µA @ 10 V
-
Surface Mount
0201 (0603 Metric)
GMD2
150°C
RB400VYM-50FHTR
Rohm Semiconductor

DIODE SCHOTTKY 40V 500MA TUMD2M

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 7.35 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 30 V
  • Capacitance @ Vr, F: 130pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, Flat Lead
  • Supplier Device Package: TUMD2M
  • Operating Temperature - Junction: 150°C (Max)
패키지: -
재고17,991
40 V
500mA
550 mV @ 500 mA
Fast Recovery =< 500ns, > 200mA (Io)
7.35 ns
50 µA @ 30 V
130pF @ 0V, 1MHz
Surface Mount
2-SMD, Flat Lead
TUMD2M
150°C (Max)
RBQ5RSM65BTFTL1
Rohm Semiconductor

DIODE SCHOTTKY 65V 5A TO277A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 65 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 660 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 90 µA @ 65 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A
  • Operating Temperature - Junction: 150°C
패키지: -
재고12,000
65 V
5A
660 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
90 µA @ 65 V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A
150°C
SCS315AJTLL
Rohm Semiconductor

DIODE SIL CARBIDE 650V 15A LPTL

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 75 µA @ 650 V
  • Capacitance @ Vr, F: 750pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: LPTL
  • Operating Temperature - Junction: 175°C (Max)
패키지: -
재고1,200
650 V
15A
1.5 V @ 15 A
No Recovery Time > 500mA (Io)
0 ns
75 µA @ 650 V
750pF @ 1V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
LPTL
175°C (Max)
RB511VM-30FHTE-17
Rohm Semiconductor

DIODE SCHOTTKY 30V 100MA UMD2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 370 mV @ 10 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 7 µA @ 10 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SC-90, SOD-323F
  • Supplier Device Package: UMD2
  • Operating Temperature - Junction: 125°C (Max)
패키지: -
Request a Quote
30 V
100mA
370 mV @ 10 mA
Small Signal =< 200mA (Io), Any Speed
-
7 µA @ 10 V
-
Surface Mount
SC-90, SOD-323F
UMD2
125°C (Max)
RF302LAM2STFTR
Rohm Semiconductor

DIODE GEN PURP 200V 3A PMDTM

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 920 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: PMDTM
  • Operating Temperature - Junction: 150°C (Max)
패키지: -
재고41,106
200 V
3A
920 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
25 ns
10 µA @ 200 V
-
Surface Mount
SOD-128
PMDTM
150°C (Max)
RFN10BM3SFHTL
Rohm Semiconductor

DIODE GEN PURP 350V 10A TO252

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 350 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 350 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252
  • Operating Temperature - Junction: 150°C (Max)
패키지: -
재고13,785
350 V
10A
1.5 V @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
30 ns
10 µA @ 350 V
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252
150°C (Max)
RB520S-30GTE61
Rohm Semiconductor

DIODE SCHOTTKY SMD

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
RBR5L30BDDTE25
Rohm Semiconductor

DIODE SCHOTTKY 30V 5A PMDS

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 490 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150 µA @ 30 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: PMDS
  • Operating Temperature - Junction: 150°C
패키지: -
재고34,266
30 V
5A
490 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
150 µA @ 30 V
-
Surface Mount
DO-214AC, SMA
PMDS
150°C
RSX058LAP2STR
Rohm Semiconductor

200V 3A, SINGLE, PMDTM, ULTRA LO

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 920 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 nA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: SOD-128
  • Operating Temperature - Junction: 175°C
패키지: -
재고8,445
200 V
3A
920 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 nA @ 200 V
-
Surface Mount
SOD-128
SOD-128
175°C