페이지 37 - Rohm Semiconductor 제품 - 다이오드 - 정류기 - 단일

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
RB168MM100TR	Rohm Semiconductor	DIODE SCHOTTKY 100V 1A SOD123FL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 810mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400nA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: PMDU Operating Temperature - Junction: 150°C (Max)	패키지: SOD-123F	재고39,000	100V	1A	810mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400nA @ 100V	-	Surface Mount	SOD-123F	PMDU	150°C (Max)
RF101L2SDDTE25	Rohm Semiconductor	DIODE GEN PURP 200V 1A PMDS Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 870mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: PMDS Operating Temperature - Junction: 150°C (Max)	패키지: DO-214AC, SMA	재고2,624	200V	1A	870mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 200V	-	Surface Mount	DO-214AC, SMA	PMDS	150°C (Max)
RB068L-60TE25	Rohm Semiconductor	DIODE SCHOTTKY 60V 2A PMDU Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2µA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: PMDU Operating Temperature - Junction: 150°C (Max)	패키지: SOD-123F	재고3,312	60V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	2µA @ 60V	-	Surface Mount	SOD-123F	PMDU	150°C (Max)
RB168L-60TE25	Rohm Semiconductor	DIODE SCHOTTKY 60V 1A PMDS Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 680mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.5µA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: PMDS Operating Temperature - Junction: 150°C (Max)	패키지: DO-214AC, SMA	재고7,344	60V	1A	680mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.5µA @ 60V	-	Surface Mount	DO-214AC, SMA	PMDS	150°C (Max)
RB521SM-40T2R	Rohm Semiconductor	DIODE SCHOTTKY 40V 200MA EMD2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 540mV @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 90µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: EMD2 Operating Temperature - Junction: 150°C (Max)	패키지: SC-79, SOD-523	재고91,716	40V	200mA	540mV @ 200mA	Small Signal =< 200mA (Io), Any Speed	-	90µA @ 40V	-	Surface Mount	SC-79, SOD-523	EMD2	150°C (Max)
RF01VM2STE-17	Rohm Semiconductor	DIODE GEN PURP 250V 100MA UMD2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 250V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 250V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: UMD2 Operating Temperature - Junction: 150°C (Max)	패키지: SC-90, SOD-323F	재고2,656	250V	100mA	1.2V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 250V	-	Surface Mount	SC-90, SOD-323F	UMD2	150°C (Max)
RB501VM-40TE-17	Rohm Semiconductor	DIODE SCHOTTKY 40V 100MA UMD2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 550mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 30µA @ 10V Capacitance @ Vr, F: 6pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: UMD2 Operating Temperature - Junction: 125°C (Max)	패키지: SC-90, SOD-323F	재고4,344,600	40V	100mA	550mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	30µA @ 10V	6pF @ 10V, 1MHz	Surface Mount	SC-90, SOD-323F	UMD2	125°C (Max)
RB530SM-30T2R	Rohm Semiconductor	DIODE SCHOTTKY 30V 200MA EMD2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 450mV @ 10mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500nA @ 10V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: EMD2 Operating Temperature - Junction: 150°C (Max)	패키지: SC-79, SOD-523	재고96,000	30V	200mA	450mV @ 10mA	Fast Recovery =< 500ns, > 200mA (Io)	-	500nA @ 10V	-	Surface Mount	SC-79, SOD-523	EMD2	150°C (Max)
SCS308APC9	Rohm Semiconductor	DIODE SC SCHKY 650V 8A TO220ACP Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 8A (DC) Voltage - Forward (Vf) (Max) @ If: 1.5V @ 8A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 40µA @ 650V Capacitance @ Vr, F: 400pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: - Operating Temperature - Junction: 175°C (Max)	패키지: TO-220-2	재고15,216	650V	8A (DC)	1.5V @ 8A	No Recovery Time > 500mA (Io)	0ns	40µA @ 650V	400pF @ 1V, 1MHz	Through Hole	TO-220-2	-	175°C (Max)
RFN30TS6SGC11	Rohm Semiconductor	DIODE GEN PURP 600V 30A TO247 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.55V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 Operating Temperature - Junction: 150°C (Max)	패키지: TO-247-3	재고6,204	600V	30A	1.55V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	60ns	10µA @ 600V	-	Through Hole	TO-247-3	TO-247	150°C (Max)
RFUH30TS6SGC11	Rohm Semiconductor	DIODE SUPER FAST 600V 15A TO247 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 2.8V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 Operating Temperature - Junction: 150°C (Max)	패키지: TO-247-3	재고10,680	600V	15A	2.8V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	-	Through Hole	TO-247-3	TO-247	150°C (Max)
SCS306APC9	Rohm Semiconductor	DIODE SC SCHKY 650V 6A TO220ACP Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 6A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 30µA @ 650V Capacitance @ Vr, F: 300pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: - Operating Temperature - Junction: 175°C (Max)	패키지: TO-220-2	재고15,984	650V	6A	1.5V @ 6A	No Recovery Time > 500mA (Io)	0ns	30µA @ 650V	300pF @ 1V, 1MHz	Through Hole	TO-220-2	-	175°C (Max)
SCS304APC9	Rohm Semiconductor	DIODE SCHOTTKY 650V 4A TO220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 4A (DC) Voltage - Forward (Vf) (Max) @ If: 1.5V @ 4A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 20µA @ 650V Capacitance @ Vr, F: 200pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: - Operating Temperature - Junction: 175°C (Max)	패키지: TO-220-2	재고21,348	650V	4A (DC)	1.5V @ 4A	No Recovery Time > 500mA (Io)	0ns	20µA @ 650V	200pF @ 1V, 1MHz	Through Hole	TO-220-2	-	175°C (Max)
SCS302APC9	Rohm Semiconductor	DIODE SCHOTTKY 650V 2A TO220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 2A (DC) Voltage - Forward (Vf) (Max) @ If: 1.5V @ 2A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 10.8µA @ 650V Capacitance @ Vr, F: 110pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: - Operating Temperature - Junction: 175°C (Max)	패키지: TO-220-2	재고21,072	650V	2A (DC)	1.5V @ 2A	No Recovery Time > 500mA (Io)	0ns	10.8µA @ 650V	110pF @ 1V, 1MHz	Through Hole	TO-220-2	-	175°C (Max)
RFNL20TJ6SGC9	Rohm Semiconductor	DIODE GP 600V 20A TO220ACFP Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 180ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: TO-220ACFP Operating Temperature - Junction: 150°C (Max)	패키지: TO-220-2 Full Pack	재고18,756	600V	20A	1.3V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	180ns	10µA @ 600V	-	Through Hole	TO-220-2 Full Pack	TO-220ACFP	150°C (Max)
RFV15TG6SGC9	Rohm Semiconductor	DIODE GEN PURP 600V 15A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 2.8V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220ACFP Operating Temperature - Junction: 150°C (Max)	패키지: TO-220-2	재고16,212	600V	15A	2.8V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 600V	-	Through Hole	TO-220-2	TO-220ACFP	150°C (Max)
RFV12TG6SGC9	Rohm Semiconductor	DIODE GEN PURP 600V 12A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 2.8V @ 12A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220ACFP Operating Temperature - Junction: 150°C (Max)	패키지: TO-220-2	재고19,872	600V	12A	2.8V @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	45ns	10µA @ 600V	-	Through Hole	TO-220-2	TO-220ACFP	150°C (Max)
RFUH20TB4S	Rohm Semiconductor	DIODE GEN PURP 430V 20A TO220FN Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 430V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 10µA @ 430V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220FN Operating Temperature - Junction: 150°C (Max)	패키지: TO-220-3 Full Pack	재고18,372	430V	20A	1.7V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	10µA @ 430V	-	Through Hole	TO-220-3 Full Pack	TO-220FN	150°C (Max)
RFNL10TJ6SGC9	Rohm Semiconductor	DIODE GP 600V 10A TO220ACFP Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220ACFP Operating Temperature - Junction: 150°C (Max)	패키지: TO-220-2	재고16,248	600V	10A	1.3V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	10µA @ 600V	-	Through Hole	TO-220-2	TO-220ACFP	150°C (Max)
RFV8TJ6SGC9	Rohm Semiconductor	DIODE GEN PURP 600V 8A TO220ACFP Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 2.8V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: TO-220ACFP Operating Temperature - Junction: 150°C (Max)	패키지: TO-220-2 Full Pack	재고18,240	600V	8A	2.8V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	45ns	10µA @ 600V	-	Through Hole	TO-220-2 Full Pack	TO-220ACFP	150°C (Max)
RFV8TG6SGC9	Rohm Semiconductor	DIODE GEN PURP 600V 8A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 2.8V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220ACFP Operating Temperature - Junction: 150°C (Max)	패키지: TO-220-2	재고22,872	600V	8A	2.8V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	45ns	10µA @ 600V	-	Through Hole	TO-220-2	TO-220ACFP	150°C (Max)
RFVS8TJ6SGC9	Rohm Semiconductor	DIODE GEN PURP 600V 8A TO220ACFP Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 3V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: TO-220ACFP Operating Temperature - Junction: 150°C (Max)	패키지: TO-220-2 Full Pack	재고23,460	600V	8A	3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	40ns	10µA @ 600V	-	Through Hole	TO-220-2 Full Pack	TO-220ACFP	150°C (Max)
RFVS8TG6SGC9	Rohm Semiconductor	DIODE GEN PURP 600V 8A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 3V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220ACFP Operating Temperature - Junction: 150°C (Max)	패키지: TO-220-2	재고20,628	600V	8A	3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	40ns	10µA @ 600V	-	Through Hole	TO-220-2	TO-220ACFP	150°C (Max)
RFNL5TJ6SGC9	Rohm Semiconductor	DIODE GEN PURP 600V 5A TO220ACFP Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 130ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220ACFP Operating Temperature - Junction: 150°C (Max)	패키지: TO-220-2	재고19,728	600V	5A	1.3V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	130ns	10µA @ 600V	-	Through Hole	TO-220-2	TO-220ACFP	150°C (Max)
SCS208AMC	Rohm Semiconductor	DIODE SCHOTTKY 650V 8A TO220FM Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.55V @ 8A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 160µA @ 600V Capacitance @ Vr, F: 291pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: TO-220FM Operating Temperature - Junction: 175°C (Max)	패키지: TO-220-2 Full Pack	재고10,752	650V	8A	1.55V @ 8A	No Recovery Time > 500mA (Io)	0ns	160µA @ 600V	291pF @ 1V, 1MHz	Through Hole	TO-220-2 Full Pack	TO-220FM	175°C (Max)
RFUS20TM4S	Rohm Semiconductor	DIODE GEN PURP 430V 20A TO220NFM Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 430V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 430V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NFM Operating Temperature - Junction: 150°C (Max)	패키지: TO-220-3 Full Pack	재고9,480	430V	20A	1.6V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 430V	-	Through Hole	TO-220-3 Full Pack	TO-220NFM	150°C (Max)
RF1005TF6S	Rohm Semiconductor	DIODE GEN PURP 600V 10A TO220NFM Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: TO-220NFM Operating Temperature - Junction: 150°C (Max)	패키지: TO-220-2 Full Pack	재고18,240	600V	10A	1.7V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	40ns	10µA @ 600V	-	Through Hole	TO-220-2 Full Pack	TO-220NFM	150°C (Max)
RF505TF6S	Rohm Semiconductor	DIODE GEN PURP 600V 5A TO220NFM Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Supplier Device Package: TO-220NFM Operating Temperature - Junction: 150°C (Max)	패키지: TO-220-2 Full Pack, Isolated Tab	재고22,884	600V	5A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	-	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	TO-220NFM	150°C (Max)

RB168MM100TR

Rohm Semiconductor

DIODE SCHOTTKY 100V 1A SOD123FL

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 810mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 400nA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)

패키지: SOD-123F

재고39,000

100V

1A

810mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

400nA @ 100V

-

Surface Mount

SOD-123F

PMDU

150°C (Max)

RF101L2SDDTE25

Rohm Semiconductor

DIODE GEN PURP 200V 1A PMDS

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 870mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)

패키지: DO-214AC, SMA

재고2,624

200V

1A

870mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

10µA @ 200V

-

Surface Mount

DO-214AC, SMA

PMDS

150°C (Max)

RB068L-60TE25

Rohm Semiconductor

DIODE SCHOTTKY 60V 2A PMDU

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2µA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)

패키지: SOD-123F

재고3,312

60V

2A

700mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

2µA @ 60V

-

Surface Mount

SOD-123F

PMDU

150°C (Max)

RB168L-60TE25

Rohm Semiconductor

DIODE SCHOTTKY 60V 1A PMDS

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 680mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1.5µA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)

패키지: DO-214AC, SMA

재고7,344

60V

1A

680mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

1.5µA @ 60V

-

Surface Mount

DO-214AC, SMA

PMDS

150°C (Max)

RB521SM-40T2R

Rohm Semiconductor

DIODE SCHOTTKY 40V 200MA EMD2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 540mV @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 90µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: EMD2
Operating Temperature - Junction: 150°C (Max)

패키지: SC-79, SOD-523

재고91,716

40V

200mA

540mV @ 200mA

Small Signal =< 200mA (Io), Any Speed

-

90µA @ 40V

-

Surface Mount

SC-79, SOD-523

EMD2

150°C (Max)

RF01VM2STE-17

Rohm Semiconductor

DIODE GEN PURP 250V 100MA UMD2

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 250V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 250V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Supplier Device Package: UMD2
Operating Temperature - Junction: 150°C (Max)

패키지: SC-90, SOD-323F

재고2,656

250V

100mA

1.2V @ 100mA

Fast Recovery =< 500ns, > 200mA (Io)

-

10µA @ 250V

-

Surface Mount

SC-90, SOD-323F

UMD2

150°C (Max)

RB501VM-40TE-17

Rohm Semiconductor

DIODE SCHOTTKY 40V 100MA UMD2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 550mV @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 30µA @ 10V
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Supplier Device Package: UMD2
Operating Temperature - Junction: 125°C (Max)

패키지: SC-90, SOD-323F

재고4,344,600

40V

100mA

550mV @ 100mA

Small Signal =< 200mA (Io), Any Speed

-

30µA @ 10V

6pF @ 10V, 1MHz

Surface Mount

SC-90, SOD-323F

UMD2

125°C (Max)

RB530SM-30T2R

Rohm Semiconductor

DIODE SCHOTTKY 30V 200MA EMD2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 450mV @ 10mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500nA @ 10V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: EMD2
Operating Temperature - Junction: 150°C (Max)

패키지: SC-79, SOD-523

재고96,000

30V

200mA

450mV @ 10mA

Fast Recovery =< 500ns, > 200mA (Io)

-

500nA @ 10V

-

Surface Mount

SC-79, SOD-523

EMD2

150°C (Max)

SCS308APC9

Rohm Semiconductor

DIODE SC SCHKY 650V 8A TO220ACP

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 8A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 8A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 40µA @ 650V
Capacitance @ Vr, F: 400pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: -
Operating Temperature - Junction: 175°C (Max)

패키지: TO-220-2

재고15,216

650V

8A (DC)

1.5V @ 8A

No Recovery Time > 500mA (Io)

0ns

40µA @ 650V

400pF @ 1V, 1MHz

Through Hole

TO-220-2

-

175°C (Max)

RFN30TS6SGC11

Rohm Semiconductor

DIODE GEN PURP 600V 30A TO247

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.55V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60ns
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247
Operating Temperature - Junction: 150°C (Max)

패키지: TO-247-3

재고6,204

600V

30A

1.55V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

60ns

10µA @ 600V

-

Through Hole

TO-247-3

TO-247

150°C (Max)

RFUH30TS6SGC11

Rohm Semiconductor

DIODE SUPER FAST 600V 15A TO247

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 2.8V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247
Operating Temperature - Junction: 150°C (Max)

패키지: TO-247-3

재고10,680

600V

15A

2.8V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 600V

-

Through Hole

TO-247-3

TO-247

150°C (Max)

SCS306APC9

Rohm Semiconductor

DIODE SC SCHKY 650V 6A TO220ACP

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 6A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 30µA @ 650V
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: -
Operating Temperature - Junction: 175°C (Max)

패키지: TO-220-2

재고15,984

650V

6A

1.5V @ 6A

No Recovery Time > 500mA (Io)

0ns

30µA @ 650V

300pF @ 1V, 1MHz

Through Hole

TO-220-2

-

175°C (Max)

SCS304APC9

Rohm Semiconductor

DIODE SCHOTTKY 650V 4A TO220-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 4A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 4A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 20µA @ 650V
Capacitance @ Vr, F: 200pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: -
Operating Temperature - Junction: 175°C (Max)

패키지: TO-220-2

재고21,348

650V

4A (DC)

1.5V @ 4A

No Recovery Time > 500mA (Io)

0ns

20µA @ 650V

200pF @ 1V, 1MHz

Through Hole

TO-220-2

-

175°C (Max)

SCS302APC9

Rohm Semiconductor

DIODE SCHOTTKY 650V 2A TO220-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 2A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 2A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 10.8µA @ 650V
Capacitance @ Vr, F: 110pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: -
Operating Temperature - Junction: 175°C (Max)

패키지: TO-220-2

재고21,072

650V

2A (DC)

1.5V @ 2A

No Recovery Time > 500mA (Io)

0ns

10.8µA @ 650V

110pF @ 1V, 1MHz

Through Hole

TO-220-2

-

175°C (Max)

RFNL20TJ6SGC9

Rohm Semiconductor

DIODE GP 600V 20A TO220ACFP

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 180ns
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: TO-220ACFP
Operating Temperature - Junction: 150°C (Max)

패키지: TO-220-2 Full Pack

재고18,756

600V

20A

1.3V @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

180ns

10µA @ 600V

-

Through Hole

TO-220-2 Full Pack

TO-220ACFP

150°C (Max)

RFV15TG6SGC9

Rohm Semiconductor

DIODE GEN PURP 600V 15A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 2.8V @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220ACFP
Operating Temperature - Junction: 150°C (Max)

패키지: TO-220-2

재고16,212

600V

15A

2.8V @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

10µA @ 600V

-

Through Hole

TO-220-2

TO-220ACFP

150°C (Max)

RFV12TG6SGC9

Rohm Semiconductor

DIODE GEN PURP 600V 12A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 2.8V @ 12A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45ns
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220ACFP
Operating Temperature - Junction: 150°C (Max)

패키지: TO-220-2

재고19,872

600V

12A

2.8V @ 12A

Fast Recovery =< 500ns, > 200mA (Io)

45ns

10µA @ 600V

-

Through Hole

TO-220-2

TO-220ACFP

150°C (Max)

RFUH20TB4S

Rohm Semiconductor

DIODE GEN PURP 430V 20A TO220FN

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 430V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 10µA @ 430V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C (Max)

패키지: TO-220-3 Full Pack

재고18,372

430V

20A

1.7V @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

10µA @ 430V

-

Through Hole

TO-220-3 Full Pack

TO-220FN

150°C (Max)

RFNL10TJ6SGC9

Rohm Semiconductor

DIODE GP 600V 10A TO220ACFP

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220ACFP
Operating Temperature - Junction: 150°C (Max)

패키지: TO-220-2

재고16,248

600V

10A

1.3V @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

10µA @ 600V

-

Through Hole

TO-220-2

TO-220ACFP

150°C (Max)

RFV8TJ6SGC9

Rohm Semiconductor

DIODE GEN PURP 600V 8A TO220ACFP

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 2.8V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45ns
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: TO-220ACFP
Operating Temperature - Junction: 150°C (Max)

패키지: TO-220-2 Full Pack

재고18,240

600V

8A

2.8V @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

45ns

10µA @ 600V

-

Through Hole

TO-220-2 Full Pack

TO-220ACFP

150°C (Max)

RFV8TG6SGC9

Rohm Semiconductor

DIODE GEN PURP 600V 8A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 2.8V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45ns
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220ACFP
Operating Temperature - Junction: 150°C (Max)

패키지: TO-220-2

재고22,872

600V

8A

2.8V @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

45ns

10µA @ 600V

-

Through Hole

TO-220-2

TO-220ACFP

150°C (Max)

RFVS8TJ6SGC9

Rohm Semiconductor

DIODE GEN PURP 600V 8A TO220ACFP

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 3V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40ns
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: TO-220ACFP
Operating Temperature - Junction: 150°C (Max)

패키지: TO-220-2 Full Pack

재고23,460

600V

8A

3V @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

40ns

10µA @ 600V

-

Through Hole

TO-220-2 Full Pack

TO-220ACFP

150°C (Max)

RFVS8TG6SGC9

Rohm Semiconductor

DIODE GEN PURP 600V 8A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 3V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40ns
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220ACFP
Operating Temperature - Junction: 150°C (Max)

패키지: TO-220-2

재고20,628

600V

8A

3V @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

40ns

10µA @ 600V

-

Through Hole

TO-220-2

TO-220ACFP

150°C (Max)

RFNL5TJ6SGC9

Rohm Semiconductor

DIODE GEN PURP 600V 5A TO220ACFP

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 130ns
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220ACFP
Operating Temperature - Junction: 150°C (Max)

패키지: TO-220-2

재고19,728

600V

5A

1.3V @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

130ns

10µA @ 600V

-

Through Hole

TO-220-2

TO-220ACFP

150°C (Max)

SCS208AMC

Rohm Semiconductor

DIODE SCHOTTKY 650V 8A TO220FM

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.55V @ 8A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 160µA @ 600V
Capacitance @ Vr, F: 291pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: TO-220FM
Operating Temperature - Junction: 175°C (Max)

패키지: TO-220-2 Full Pack

재고10,752

650V

8A

1.55V @ 8A

No Recovery Time > 500mA (Io)

0ns

160µA @ 600V

291pF @ 1V, 1MHz

Through Hole

TO-220-2 Full Pack

TO-220FM

175°C (Max)

RFUS20TM4S

Rohm Semiconductor

DIODE GEN PURP 430V 20A TO220NFM

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 430V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 430V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220NFM
Operating Temperature - Junction: 150°C (Max)

패키지: TO-220-3 Full Pack

재고9,480

430V

20A

1.6V @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 430V

-

Through Hole

TO-220-3 Full Pack

TO-220NFM

150°C (Max)

RF1005TF6S

Rohm Semiconductor

DIODE GEN PURP 600V 10A TO220NFM

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40ns
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: TO-220NFM
Operating Temperature - Junction: 150°C (Max)

패키지: TO-220-2 Full Pack

재고18,240

600V

10A

1.7V @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

40ns

10µA @ 600V

-

Through Hole

TO-220-2 Full Pack

TO-220NFM

150°C (Max)

RF505TF6S

Rohm Semiconductor

DIODE GEN PURP 600V 5A TO220NFM

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Supplier Device Package: TO-220NFM
Operating Temperature - Junction: 150°C (Max)

패키지: TO-220-2 Full Pack, Isolated Tab

재고22,884

600V

5A

-

Fast Recovery =< 500ns, > 200mA (Io)

-

Through Hole

TO-220-2 Full Pack, Isolated Tab

TO-220NFM

150°C (Max)