페이지 4 - Rohm Semiconductor 제품 - 다이오드 - 정류기 - 단일

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
YQ30NL10SEFHTL	Rohm Semiconductor	TRENCH MOS STRUCTURE, 100V, 30A, Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 860 mV @ 30 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263L Operating Temperature - Junction: 150°C	패키지: -	재고3,000	100 V	30A	860 mV @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	150 µA @ 100 V	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263L	150°C
RB521S-303TTE61	Rohm Semiconductor	DIODE SCHOTTKY SMD Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
SCS308AJTLL	Rohm Semiconductor	DIODE SIL CARBIDE 650V 8A LPTL Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 40 µA @ 650 V Capacitance @ Vr, F: 400pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: LPTL Operating Temperature - Junction: 175°C (Max)	패키지: -	재고2,850	650 V	8A	1.5 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	400pF @ 1V, 1MHz	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	LPTL	175°C (Max)
RB520S-309HLTE61	Rohm Semiconductor	DIODE SCHOTTKY SMD Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
RBR3L30BDDTE25	Rohm Semiconductor	DIODE SCHOTTKY 30V 3A PMDS Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 80 µA @ 30 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: PMDS Operating Temperature - Junction: 150°C	패키지: -	재고1,236	30 V	3A	530 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	80 µA @ 30 V	-	Surface Mount	DO-214AC, SMA	PMDS	150°C
RB168MM-60TFTR	Rohm Semiconductor	DIODE SCHOTTKY 60V 1A PMDU Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.5 µA @ 60 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: PMDU Operating Temperature - Junction: 150°C (Max)	패키지: -	재고42,483	60 V	1A	680 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.5 µA @ 60 V	-	Surface Mount	SOD-123F	PMDU	150°C (Max)
RFV5BGE6STL	Rohm Semiconductor	DIODE GEN PURP 600V 5A TO252GE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40 ns Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252GE Operating Temperature - Junction: 150°C	패키지: -	재고7,470	600 V	5A	2.8 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	40 ns	10 µA @ 600 V	-	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252GE	150°C
RB521ZS-40T2R	Rohm Semiconductor	DIODE SCHOTTKY 40V 100MA GMD2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 410 mV @ 10 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 25 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 0201 (0603 Metric) Supplier Device Package: GMD2 Operating Temperature - Junction: 125°C	패키지: -	Request a Quote	40 V	100mA	410 mV @ 10 mA	Small Signal =< 200mA (Io), Any Speed	-	25 µA @ 40 V	-	Surface Mount	0201 (0603 Metric)	GMD2	125°C
RB168VWM-30TR	Rohm Semiconductor	DIODE SCHOTTKY 30V 1A PMDE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 690 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 600 nA @ 30 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: PMDE Operating Temperature - Junction: 175°C	패키지: -	재고17,700	30 V	1A	690 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	600 nA @ 30 V	-	Surface Mount	2-SMD, Flat Lead	PMDE	175°C
RF101L4STFTE25	Rohm Semiconductor	DIODE GEN PURP 400V 1A PMDS Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: PMDS Operating Temperature - Junction: 150°C	패키지: -	재고3,315	400 V	1A	1.25 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	10 µA @ 400 V	-	Surface Mount	DO-214AC, SMA	PMDS	150°C
RB168VWM-40TR	Rohm Semiconductor	DIODE SCHOTTKY 40V 1A PMDE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 690 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 nA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: PMDE Operating Temperature - Junction: 175°C	패키지: -	재고6,096	40 V	1A	690 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 nA @ 40 V	-	Surface Mount	2-SMD, Flat Lead	PMDE	175°C
RB560VM-40FHTE-17	Rohm Semiconductor	DIODE SCHOTTKY 40V 500MA UMD2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 640 mV @ 500 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 40 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: UMD2 Operating Temperature - Junction: 150°C (Max)	패키지: -	재고22,230	40 V	500mA	640 mV @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	-	40 µA @ 40 V	-	Surface Mount	SC-90, SOD-323F	UMD2	150°C (Max)
RB050LA-40GTR	Rohm Semiconductor	DIODE SCHOTTKY 40V 3A PMDT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: PMDT Operating Temperature - Junction: 150°C	패키지: -	Request a Quote	40 V	3A	550 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 40 V	-	Surface Mount	SOD-128	PMDT	150°C
RB520S-307STE61	Rohm Semiconductor	DIODE SCHOTTKY SMD Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
BAS116HYT116	Rohm Semiconductor	DIODE GEN PURP 80V 215MA SOT23 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80 V Current - Average Rectified (Io): 215mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Current - Reverse Leakage @ Vr: 5 nA @ 75 V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23 Operating Temperature - Junction: 150°C	패키지: -	재고17,706	80 V	215mA	1.25 V @ 150 mA	Standard Recovery >500ns, > 200mA (Io)	3 µs	5 nA @ 75 V	4pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23	150°C
RB520S-308HQTE61	Rohm Semiconductor	DIODE SCHOTTKY SMD Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
RB510VM-40TE-17	Rohm Semiconductor	DIODE SCHOTTKY 40V 100MA UMD2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 480 mV @ 10 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: UMD2 Operating Temperature - Junction: 150°C	패키지: -	재고8,316	40 V	100mA	480 mV @ 10 mA	Small Signal =< 200mA (Io), Any Speed	-	2 µA @ 40 V	-	Surface Mount	SC-90, SOD-323F	UMD2	150°C
YQ15RSM10SDTFTL1	Rohm Semiconductor	TRENCH MOS STRUCTURE, 100V, 15A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 680 mV @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A Operating Temperature - Junction: 175°C	패키지: -	재고12,000	100 V	15A	680 mV @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 100 V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A	175°C
RB168VWM-60TFTR	Rohm Semiconductor	DIODE SCHOTTKY 60V 1A PMDE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 760 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 nA @ 60 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: PMDE Operating Temperature - Junction: 175°C	패키지: -	재고4,581	60 V	1A	760 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 nA @ 60 V	-	Surface Mount	2-SMD, Flat Lead	PMDE	175°C
RB050LA-40TFTR	Rohm Semiconductor	DIODE SCHOTTKY 40V 3A PMDT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: PMDT Operating Temperature - Junction: 150°C	패키지: -	Request a Quote	40 V	3A	550 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 40 V	-	Surface Mount	SOD-128	PMDT	150°C
RB521ASA-30FHT2RB	Rohm Semiconductor	SUPER LOW VF, 30V, 200MA, DFN100 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 470 mV @ 200 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 30 µA @ 10 V Capacitance @ Vr, F: - Mounting Type: Surface Mount, Wettable Flank Package / Case: SOD-882 Supplier Device Package: DFN1006-2W Operating Temperature - Junction: 125°C	패키지: -	재고23,925	30 V	200mA	470 mV @ 200 mA	Small Signal =< 200mA (Io), Any Speed	-	30 µA @ 10 V	-	Surface Mount, Wettable Flank	SOD-882	DFN1006-2W	125°C
DAN217CT116	Rohm Semiconductor	DIODE GEN PURP 80V 100MA SMD3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80 V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Current - Reverse Leakage @ Vr: 100 nA @ 70 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SMD3 Operating Temperature - Junction: 150°C	패키지: -	Request a Quote	80 V	100mA	1.2 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	4 ns	100 nA @ 70 V	-	Surface Mount	TO-236-3, SC-59, SOT-23-3	SMD3	150°C
BAT54HYT116	Rohm Semiconductor	DIODE SCHOTTKY 30V 200MA SOT23 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 2 µA @ 25 V Capacitance @ Vr, F: 12pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23 Operating Temperature - Junction: 150°C	패키지: -	재고8,445	30 V	200mA	800 mV @ 100 mA	Small Signal =< 200mA (Io), Any Speed	50 ns	2 µA @ 25 V	12pF @ 1V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23	150°C
RBR5LAM30ATFTR	Rohm Semiconductor	AUTOMOTIVE SCHOTTKY BARRIER DIOD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 30 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: PMDTM Operating Temperature - Junction: 150°C (Max)	패키지: -	재고19,062	30 V	5A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 30 V	-	Surface Mount	SOD-128	PMDTM	150°C (Max)
RB751CS-40FHT2RA	Rohm Semiconductor	DIODE SCHOTTKY 30V 30MA VMN2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 30mA Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 nA @ 30 V Capacitance @ Vr, F: 2pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: VMN2 (SOD-923) Operating Temperature - Junction: 125°C (Max)	패키지: -	재고83,121	30 V	30mA	370 mV @ 1 mA	Small Signal =< 200mA (Io), Any Speed	-	500 nA @ 30 V	2pF @ 1V, 1MHz	Surface Mount	2-SMD, Flat Lead	VMN2 (SOD-923)	125°C (Max)
RB540SM-40T2R	Rohm Semiconductor	DIODE SCHOTTKY 40V 200MA EMD2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 710 mV @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 15 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: EMD2 Operating Temperature - Junction: 150°C	패키지: -	재고22,857	40 V	200mA	710 mV @ 100 mA	Small Signal =< 200mA (Io), Any Speed	-	15 µA @ 40 V	-	Surface Mount	SC-79, SOD-523	EMD2	150°C
1SS355VMFHTE-17	Rohm Semiconductor	DIODE GEN PURP 80V 100MA UMD2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80 V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Current - Reverse Leakage @ Vr: 100 nA @ 80 V Capacitance @ Vr, F: 3pF @ 500mV, 1MHz Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: UMD2 Operating Temperature - Junction: 150°C (Max)	패키지: -	재고58,698	80 V	100mA	1.2 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	4 ns	100 nA @ 80 V	3pF @ 500mV, 1MHz	Surface Mount	SC-90, SOD-323F	UMD2	150°C (Max)
RB521S-403TTE61	Rohm Semiconductor	DIODE SCHOTTKY SMD Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-

YQ30NL10SEFHTL

Rohm Semiconductor

TRENCH MOS STRUCTURE, 100V, 30A,

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 30 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263L
Operating Temperature - Junction: 150°C

패키지: -

재고3,000

100 V

30A

860 mV @ 30 A

Fast Recovery =< 500ns, > 200mA (Io)

-

150 µA @ 100 V

-

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

TO-263L

150°C

RB521S-303TTE61

Rohm Semiconductor

DIODE SCHOTTKY SMD

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

Request a Quote

-

SCS308AJTLL

Rohm Semiconductor

DIODE SIL CARBIDE 650V 8A LPTL

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Capacitance @ Vr, F: 400pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: LPTL
Operating Temperature - Junction: 175°C (Max)

패키지: -

재고2,850

650 V

8A

1.5 V @ 8 A

No Recovery Time > 500mA (Io)

0 ns

40 µA @ 650 V

400pF @ 1V, 1MHz

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

LPTL

175°C (Max)

RB520S-309HLTE61

Rohm Semiconductor

DIODE SCHOTTKY SMD

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

Request a Quote

-

RBR3L30BDDTE25

Rohm Semiconductor

DIODE SCHOTTKY 30V 3A PMDS

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 80 µA @ 30 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C

패키지: -

재고1,236

30 V

3A

530 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

80 µA @ 30 V

-

Surface Mount

DO-214AC, SMA

PMDS

150°C

RB168MM-60TFTR

Rohm Semiconductor

DIODE SCHOTTKY 60V 1A PMDU

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1.5 µA @ 60 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)

패키지: -

재고42,483

60 V

1A

680 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

1.5 µA @ 60 V

-

Surface Mount

SOD-123F

PMDU

150°C (Max)

RFV5BGE6STL

Rohm Semiconductor

DIODE GEN PURP 600V 5A TO252GE

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C

패키지: -

재고7,470

600 V

5A

2.8 V @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

40 ns

10 µA @ 600 V

-

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

TO-252GE

150°C

RB521ZS-40T2R

Rohm Semiconductor

DIODE SCHOTTKY 40V 100MA GMD2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 410 mV @ 10 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 25 µA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Supplier Device Package: GMD2
Operating Temperature - Junction: 125°C

패키지: -

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40 V

100mA

410 mV @ 10 mA

Small Signal =< 200mA (Io), Any Speed

-

25 µA @ 40 V

-

Surface Mount

0201 (0603 Metric)

GMD2

125°C

RB168VWM-30TR

Rohm Semiconductor

DIODE SCHOTTKY 30V 1A PMDE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 600 nA @ 30 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C

패키지: -

재고17,700

30 V

1A

690 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

600 nA @ 30 V

-

Surface Mount

2-SMD, Flat Lead

PMDE

175°C

RF101L4STFTE25

Rohm Semiconductor

DIODE GEN PURP 400V 1A PMDS

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C

패키지: -

재고3,315

400 V

1A

1.25 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

25 ns

10 µA @ 400 V

-

Surface Mount

DO-214AC, SMA

PMDS

150°C

RB168VWM-40TR

Rohm Semiconductor

DIODE SCHOTTKY 40V 1A PMDE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 nA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C

패키지: -

재고6,096

40 V

1A

690 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 nA @ 40 V

-

Surface Mount

2-SMD, Flat Lead

PMDE

175°C

RB560VM-40FHTE-17

Rohm Semiconductor

DIODE SCHOTTKY 40V 500MA UMD2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 500 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 40 µA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Supplier Device Package: UMD2
Operating Temperature - Junction: 150°C (Max)

패키지: -

재고22,230

40 V

500mA

640 mV @ 500 mA

Fast Recovery =< 500ns, > 200mA (Io)

-

40 µA @ 40 V

-

Surface Mount

SC-90, SOD-323F

UMD2

150°C (Max)

RB050LA-40GTR

Rohm Semiconductor

DIODE SCHOTTKY 40V 3A PMDT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: PMDT
Operating Temperature - Junction: 150°C

패키지: -

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40 V

3A

550 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 40 V

-

Surface Mount

SOD-128

PMDT

150°C

RB520S-307STE61

Rohm Semiconductor

DIODE SCHOTTKY SMD

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

Request a Quote

-

BAS116HYT116

Rohm Semiconductor

DIODE GEN PURP 80V 215MA SOT23

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80 V
Current - Average Rectified (Io): 215mA
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Operating Temperature - Junction: 150°C

패키지: -

재고17,706

80 V

215mA

1.25 V @ 150 mA

Standard Recovery >500ns, > 200mA (Io)

3 µs

5 nA @ 75 V

4pF @ 0V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

150°C

RB520S-308HQTE61

Rohm Semiconductor

DIODE SCHOTTKY SMD

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

Request a Quote

-

RB510VM-40TE-17

Rohm Semiconductor

DIODE SCHOTTKY 40V 100MA UMD2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 10 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2 µA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Supplier Device Package: UMD2
Operating Temperature - Junction: 150°C

패키지: -

재고8,316

40 V

100mA

480 mV @ 10 mA

Small Signal =< 200mA (Io), Any Speed

-

2 µA @ 40 V

-

Surface Mount

SC-90, SOD-323F

UMD2

150°C

YQ15RSM10SDTFTL1

Rohm Semiconductor

TRENCH MOS STRUCTURE, 100V, 15A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 15 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C

패키지: -

재고12,000

100 V

15A

680 mV @ 15 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 100 V

-

Surface Mount

TO-277, 3-PowerDFN

TO-277A

175°C

RB168VWM-60TFTR

Rohm Semiconductor

DIODE SCHOTTKY 60V 1A PMDE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 nA @ 60 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C

패키지: -

재고4,581

60 V

1A

760 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 nA @ 60 V

-

Surface Mount

2-SMD, Flat Lead

PMDE

175°C

RB050LA-40TFTR

Rohm Semiconductor

DIODE SCHOTTKY 40V 3A PMDT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: PMDT
Operating Temperature - Junction: 150°C

패키지: -

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40 V

3A

550 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 40 V

-

Surface Mount

SOD-128

PMDT

150°C

RB521ASA-30FHT2RB

Rohm Semiconductor

SUPER LOW VF, 30V, 200MA, DFN100

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 200 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount, Wettable Flank
Package / Case: SOD-882
Supplier Device Package: DFN1006-2W
Operating Temperature - Junction: 125°C

패키지: -

재고23,925

30 V

200mA

470 mV @ 200 mA

Small Signal =< 200mA (Io), Any Speed

-

30 µA @ 10 V

-

Surface Mount, Wettable Flank

SOD-882

DFN1006-2W

125°C

DAN217CT116

Rohm Semiconductor

DIODE GEN PURP 80V 100MA SMD3

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80 V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SMD3
Operating Temperature - Junction: 150°C

패키지: -

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80 V

100mA

1.2 V @ 100 mA

Small Signal =< 200mA (Io), Any Speed

4 ns

100 nA @ 70 V

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

SMD3

150°C

BAT54HYT116

Rohm Semiconductor

DIODE SCHOTTKY 30V 200MA SOT23

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Capacitance @ Vr, F: 12pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Operating Temperature - Junction: 150°C

패키지: -

재고8,445

30 V

200mA

800 mV @ 100 mA

Small Signal =< 200mA (Io), Any Speed

50 ns

2 µA @ 25 V

12pF @ 1V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

150°C

RBR5LAM30ATFTR

Rohm Semiconductor

AUTOMOTIVE SCHOTTKY BARRIER DIOD

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C (Max)

패키지: -

재고19,062

30 V

5A

-

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 30 V

-

Surface Mount

SOD-128

PMDTM

150°C (Max)

RB751CS-40FHT2RA

Rohm Semiconductor

DIODE SCHOTTKY 30V 30MA VMN2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 30mA
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
Capacitance @ Vr, F: 2pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Supplier Device Package: VMN2 (SOD-923)
Operating Temperature - Junction: 125°C (Max)

패키지: -

재고83,121

30 V

30mA

370 mV @ 1 mA

Small Signal =< 200mA (Io), Any Speed

-

500 nA @ 30 V

2pF @ 1V, 1MHz

Surface Mount

2-SMD, Flat Lead

VMN2 (SOD-923)

125°C (Max)

RB540SM-40T2R

Rohm Semiconductor

DIODE SCHOTTKY 40V 200MA EMD2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 100 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 15 µA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: EMD2
Operating Temperature - Junction: 150°C

패키지: -

재고22,857

40 V

200mA

710 mV @ 100 mA

Small Signal =< 200mA (Io), Any Speed

-

15 µA @ 40 V

-

Surface Mount

SC-79, SOD-523

EMD2

150°C

1SS355VMFHTE-17

Rohm Semiconductor

DIODE GEN PURP 80V 100MA UMD2

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80 V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
Capacitance @ Vr, F: 3pF @ 500mV, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Supplier Device Package: UMD2
Operating Temperature - Junction: 150°C (Max)

패키지: -

재고58,698

80 V

100mA

1.2 V @ 100 mA

Small Signal =< 200mA (Io), Any Speed

4 ns

100 nA @ 80 V

3pF @ 500mV, 1MHz

Surface Mount

SC-90, SOD-323F

UMD2

150°C (Max)

RB521S-403TTE61

Rohm Semiconductor

DIODE SCHOTTKY SMD

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

Request a Quote

-