페이지 44 - Rohm Semiconductor 제품 - 다이오드 - 정류기 - 단일

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
RB520S-30FTE61	Rohm Semiconductor	DIODE SCHOTTKY 30V 200MA EMD2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1µA @ 10V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: EMD2 Operating Temperature - Junction: 125°C (Max)	패키지: SC-79, SOD-523	재고3,232	30V	200mA	600mV @ 200mA	Small Signal =< 200mA (Io), Any Speed	-	1µA @ 10V	-	Surface Mount	SC-79, SOD-523	EMD2	125°C (Max)
RB521S-30FTE61	Rohm Semiconductor	DIODE SCHOTTKY 30V 200MA EMD2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 500mV @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 30µA @ 10V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: EMD2 Operating Temperature - Junction: 125°C (Max)	패키지: SC-79, SOD-523	재고2,560	30V	200mA	500mV @ 200mA	Small Signal =< 200mA (Io), Any Speed	-	30µA @ 10V	-	Surface Mount	SC-79, SOD-523	EMD2	125°C (Max)
RB160A30T-32	Rohm Semiconductor	DIODE SCHOTTKY 30V 1A MSR Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 480mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 30V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-41 Mini, Axial Supplier Device Package: MSR Operating Temperature - Junction: 150°C (Max)	패키지: DO-41 Mini, Axial	재고7,008	30V	1A	480mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 30V	-	Through Hole	DO-41 Mini, Axial	MSR	150°C (Max)
1SR139-400T-31	Rohm Semiconductor	DIODE GEN PURP 400V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-41 Mini, Axial Supplier Device Package: MSR Operating Temperature - Junction: 150°C (Max)	패키지: DO-41 Mini, Axial	재고4,400	400V	1A	1.1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 400V	-	Through Hole	DO-41 Mini, Axial	MSR	150°C (Max)
RF305B6STL	Rohm Semiconductor	DIODE GEN PURP 600V 3A CPD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: CPD Operating Temperature - Junction: 150°C (Max)	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고4,128	600V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	-	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	CPD	150°C (Max)
RF101A2ST-32	Rohm Semiconductor	DIODE GEN PURP 200V 1A MSR Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 870mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-41 Mini, Axial Supplier Device Package: MSR Operating Temperature - Junction: 150°C (Max)	패키지: DO-41 Mini, Axial	재고3,440	200V	1A	870mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	10µA @ 200V	-	Through Hole	DO-41 Mini, Axial	MSR	150°C (Max)
1SR153-400T-32	Rohm Semiconductor	DIODE GEN PURP 400V 1A MSR Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-41 Mini, Axial Supplier Device Package: MSR Operating Temperature - Junction: 150°C (Max)	패키지: DO-41 Mini, Axial	재고96,000	400V	1A	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	400ns	10µA @ 400V	-	Through Hole	DO-41 Mini, Axial	MSR	150°C (Max)
RB160M-40TR	Rohm Semiconductor	DIODE SCHOTTKY 40V 1A PMDU Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 510mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 30µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: PMDU Operating Temperature - Junction: 150°C (Max)	패키지: SOD-123F	재고3,889,440	40V	1A	510mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	30µA @ 40V	-	Surface Mount	SOD-123F	PMDU	150°C (Max)
RF501PS2STB	Rohm Semiconductor	DIODE GEN PURP 200V 5A 8TSOP Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 920mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 1µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-TSOP Operating Temperature - Junction: 150°C (Max)	패키지: 8-SMD, Flat Lead	재고6,464	200V	5A	920mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	1µA @ 200V	-	Surface Mount	8-SMD, Flat Lead	8-TSOP	150°C (Max)
RLS4148TE-11	Rohm Semiconductor	DIODE GEN PURP 75V 150MA LLDS Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 5µA @ 75V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: LLDS Operating Temperature - Junction: -65°C ~ 200°C	패키지: DO-213AC, MINI-MELF, SOD-80	재고7,992,504	75V	150mA	1V @ 10mA	Small Signal =< 200mA (Io), Any Speed	4ns	5µA @ 75V	4pF @ 0V, 1MHz	Surface Mount	DO-213AC, MINI-MELF, SOD-80	LLDS	-65°C ~ 200°C
RLS-73TE-11	Rohm Semiconductor	DIODE GEN PURP 80V 130MA LLDS Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 130mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 500nA @ 80V Capacitance @ Vr, F: 2pF @ 0.5V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: LLDS Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-213AC, MINI-MELF, SOD-80	재고182,976	80V	130mA	1.2V @ 100mA	Small Signal =< 200mA (Io), Any Speed	4ns	500nA @ 80V	2pF @ 0.5V, 1MHz	Surface Mount	DO-213AC, MINI-MELF, SOD-80	LLDS	-65°C ~ 175°C
RB721Q-40T-77	Rohm Semiconductor	DIODE SCHOTTKY 40V 30MA MSD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 30mA Voltage - Forward (Vf) (Max) @ If: 370mV @ 1mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500nA @ 25V Capacitance @ Vr, F: 2pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AG, DO-34, Axial Supplier Device Package: MSD Operating Temperature - Junction: 125°C (Max)	패키지: DO-204AG, DO-34, Axial	재고5,776	40V	30mA	370mV @ 1mA	Small Signal =< 200mA (Io), Any Speed	-	500nA @ 25V	2pF @ 1V, 1MHz	Through Hole	DO-204AG, DO-34, Axial	MSD	125°C (Max)
RB441Q-40T-77	Rohm Semiconductor	DIODE SCHOTTKY 40V 100MA MSD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 550mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 40V Capacitance @ Vr, F: 6pF @ 10V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AG, DO-34, Axial Supplier Device Package: MSD Operating Temperature - Junction: 125°C (Max)	패키지: DO-204AG, DO-34, Axial	재고3,904	40V	100mA	550mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	100µA @ 40V	6pF @ 10V, 1MHz	Through Hole	DO-204AG, DO-34, Axial	MSD	125°C (Max)
1SS244T-77	Rohm Semiconductor	DIODE GEN PURP 220V 200MA MSD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 220V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 10µA @ 220V Capacitance @ Vr, F: 3pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AG, DO-34, Axial Supplier Device Package: MSD Operating Temperature - Junction: 175°C (Max)	패키지: DO-204AG, DO-34, Axial	재고5,552	220V	200mA	1.5V @ 200mA	Small Signal =< 200mA (Io), Any Speed	75ns	10µA @ 220V	3pF @ 0V, 1MHz	Through Hole	DO-204AG, DO-34, Axial	MSD	175°C (Max)
1SR139-600T-32	Rohm Semiconductor	DIODE GEN PURP 600V 1A MSR Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-41 Mini, Axial Supplier Device Package: MSR Operating Temperature - Junction: 150°C (Max)	패키지: DO-41 Mini, Axial	재고7,520	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 600V	-	Through Hole	DO-41 Mini, Axial	MSR	150°C (Max)
1SR139-400T-32	Rohm Semiconductor	DIODE GEN PURP 400V 1A MSR Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-41 Mini, Axial Supplier Device Package: MSR Operating Temperature - Junction: 150°C (Max)	패키지: DO-41 Mini, Axial	재고12,756	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 400V	-	Through Hole	DO-41 Mini, Axial	MSR	150°C (Max)
1N4148T-77	Rohm Semiconductor	DIODE GEN PURP 75V 150MA GSD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 5µA @ 75V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: GSD Operating Temperature - Junction: -65°C ~ 200°C	패키지: DO-204AH, DO-35, Axial	재고6,816	75V	150mA	1V @ 10mA	Small Signal =< 200mA (Io), Any Speed	4ns	5µA @ 75V	4pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	GSD	-65°C ~ 200°C
1N4148T-72	Rohm Semiconductor	DIODE GEN PURP 75V 150MA GSD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 5µA @ 75V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: GSD Operating Temperature - Junction: -65°C ~ 200°C	패키지: DO-204AH, DO-35, Axial	재고960,120	75V	150mA	1V @ 10mA	Small Signal =< 200mA (Io), Any Speed	4ns	5µA @ 75V	4pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	GSD	-65°C ~ 200°C
RLS4448TE-11	Rohm Semiconductor	DIODE GEN PURP 75V 150MA LLDS Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 5µA @ 75V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: LLDS Operating Temperature - Junction: -65°C ~ 200°C	패키지: DO-213AC, MINI-MELF, SOD-80	재고54,000	75V	150mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	4ns	5µA @ 75V	4pF @ 0V, 1MHz	Surface Mount	DO-213AC, MINI-MELF, SOD-80	LLDS	-65°C ~ 200°C
RLS4150TE-11	Rohm Semiconductor	DIODE GEN PURP 50V 200MA LLDS Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 100nA @ 50V Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: LLDS Operating Temperature - Junction: -65°C ~ 200°C	패키지: DO-213AC, MINI-MELF, SOD-80	재고9,792	50V	200mA	1V @ 200mA	Small Signal =< 200mA (Io), Any Speed	4ns	100nA @ 50V	2.5pF @ 0V, 1MHz	Surface Mount	DO-213AC, MINI-MELF, SOD-80	LLDS	-65°C ~ 200°C
RLS245TE-11	Rohm Semiconductor	DIODE GEN PURP 220V 200MA LLDS Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 220V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 10µA @ 220V Capacitance @ Vr, F: 3pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: LLDS Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-213AC, MINI-MELF, SOD-80	재고3,695,856	220V	200mA	1.5V @ 200mA	Small Signal =< 200mA (Io), Any Speed	75ns	10µA @ 220V	3pF @ 0V, 1MHz	Surface Mount	DO-213AC, MINI-MELF, SOD-80	LLDS	-65°C ~ 175°C
1SS133T-77	Rohm Semiconductor	DIODE GEN PURP 80V 130MA MSD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 130mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 500nA @ 80V Capacitance @ Vr, F: 2pF @ 0.5V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AG, DO-34, Axial Supplier Device Package: MSD Operating Temperature - Junction: 175°C (Max)	패키지: DO-204AG, DO-34, Axial	재고125,832	80V	130mA	1.2V @ 100mA	Small Signal =< 200mA (Io), Any Speed	4ns	500nA @ 80V	2pF @ 0.5V, 1MHz	Through Hole	DO-204AG, DO-34, Axial	MSD	175°C (Max)
1N4148T-73	Rohm Semiconductor	DIODE GEN PURP 75V 150MA GSD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 5µA @ 75V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: GSD Operating Temperature - Junction: -65°C ~ 200°C	패키지: DO-204AH, DO-35, Axial	재고6,528	75V	150mA	1V @ 10mA	Small Signal =< 200mA (Io), Any Speed	4ns	5µA @ 75V	4pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	GSD	-65°C ~ 200°C
RLS139TE-11	Rohm Semiconductor	DIODE GEN PURP 80V 130MA LLDS Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 130mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 20nA @ 30V Capacitance @ Vr, F: 5pF @ 0.5V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: LLDS Operating Temperature - Junction: 175°C (Max)	패키지: DO-213AC, MINI-MELF, SOD-80	재고3,152	80V	130mA	1.2V @ 100mA	Small Signal =< 200mA (Io), Any Speed	50ns	20nA @ 30V	5pF @ 0.5V, 1MHz	Surface Mount	DO-213AC, MINI-MELF, SOD-80	LLDS	175°C (Max)
SCS120KGC	Rohm Semiconductor	DIODE SCHOTTKY 1.2KV 20A TO220AC Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.75V @ 20A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 400µA @ 1200V Capacitance @ Vr, F: 1300pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C (Max)	패키지: TO-220-2	재고6,272	1200V	20A	1.75V @ 20A	No Recovery Time > 500mA (Io)	0ns	400µA @ 1200V	1300pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220AC	175°C (Max)
SCS110KGC	Rohm Semiconductor	DIODE SCHOTTKY 1.2KV 10A TO220AC Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 10A (DC) Voltage - Forward (Vf) (Max) @ If: 1.75V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 200µA @ 1200V Capacitance @ Vr, F: 650pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C (Max)	패키지: TO-220-2	재고4,480	1200V	10A (DC)	1.75V @ 10A	No Recovery Time > 500mA (Io)	0ns	200µA @ 1200V	650pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220AC	175°C (Max)
SCS105KGC	Rohm Semiconductor	DIODE SCHOTTKY 1.2KV 5A TO220AC Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 5A (DC) Voltage - Forward (Vf) (Max) @ If: 1.75V @ 5A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 100µA @ 1200V Capacitance @ Vr, F: 325pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C (Max)	패키지: TO-220-2	재고5,616	1200V	5A (DC)	1.75V @ 5A	No Recovery Time > 500mA (Io)	0ns	100µA @ 1200V	325pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220AC	175°C (Max)
SCS110AMC	Rohm Semiconductor	DIODE SCHOTTKY 600V 10A TO220FM Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 10A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 200µA @ 600V Capacitance @ Vr, F: 430pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220FM Operating Temperature - Junction: 150°C (Max)	패키지: TO-220-2	재고4,912	600V	10A (DC)	1.7V @ 10A	No Recovery Time > 500mA (Io)	0ns	200µA @ 600V	430pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220FM	150°C (Max)

RB520S-30FTE61

Rohm Semiconductor

DIODE SCHOTTKY 30V 200MA EMD2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1µA @ 10V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: EMD2
Operating Temperature - Junction: 125°C (Max)

패키지: SC-79, SOD-523

재고3,232

30V

200mA

600mV @ 200mA

Small Signal =< 200mA (Io), Any Speed

-

1µA @ 10V

-

Surface Mount

SC-79, SOD-523

EMD2

125°C (Max)

RB521S-30FTE61

Rohm Semiconductor

DIODE SCHOTTKY 30V 200MA EMD2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 500mV @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 30µA @ 10V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: EMD2
Operating Temperature - Junction: 125°C (Max)

패키지: SC-79, SOD-523

재고2,560

30V

200mA

500mV @ 200mA

Small Signal =< 200mA (Io), Any Speed

-

30µA @ 10V

-

Surface Mount

SC-79, SOD-523

EMD2

125°C (Max)

RB160A30T-32

Rohm Semiconductor

DIODE SCHOTTKY 30V 1A MSR

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 480mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-41 Mini, Axial
Supplier Device Package: MSR
Operating Temperature - Junction: 150°C (Max)

패키지: DO-41 Mini, Axial

재고7,008

30V

1A

480mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

50µA @ 30V

-

Through Hole

DO-41 Mini, Axial

MSR

150°C (Max)

1SR139-400T-31

Rohm Semiconductor

DIODE GEN PURP 400V 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-41 Mini, Axial
Supplier Device Package: MSR
Operating Temperature - Junction: 150°C (Max)

패키지: DO-41 Mini, Axial

재고4,400

400V

1A

1.1V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

10µA @ 400V

-

Through Hole

DO-41 Mini, Axial

MSR

150°C (Max)

RF305B6STL

Rohm Semiconductor

DIODE GEN PURP 600V 3A CPD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: CPD
Operating Temperature - Junction: 150°C (Max)

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고4,128

600V

3A

-

Fast Recovery =< 500ns, > 200mA (Io)

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

CPD

150°C (Max)

RF101A2ST-32

Rohm Semiconductor

DIODE GEN PURP 200V 1A MSR

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 870mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-41 Mini, Axial
Supplier Device Package: MSR
Operating Temperature - Junction: 150°C (Max)

패키지: DO-41 Mini, Axial

재고3,440

200V

1A

870mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

10µA @ 200V

-

Through Hole

DO-41 Mini, Axial

MSR

150°C (Max)

1SR153-400T-32

Rohm Semiconductor

DIODE GEN PURP 400V 1A MSR

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400ns
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-41 Mini, Axial
Supplier Device Package: MSR
Operating Temperature - Junction: 150°C (Max)

패키지: DO-41 Mini, Axial

재고96,000

400V

1A

1.3V @ 800mA

Fast Recovery =< 500ns, > 200mA (Io)

400ns

10µA @ 400V

-

Through Hole

DO-41 Mini, Axial

MSR

150°C (Max)

RB160M-40TR

Rohm Semiconductor

DIODE SCHOTTKY 40V 1A PMDU

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 510mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 30µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)

패키지: SOD-123F

재고3,889,440

40V

1A

510mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

30µA @ 40V

-

Surface Mount

SOD-123F

PMDU

150°C (Max)

RF501PS2STB

Rohm Semiconductor

DIODE GEN PURP 200V 5A 8TSOP

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 920mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 1µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-TSOP
Operating Temperature - Junction: 150°C (Max)

패키지: 8-SMD, Flat Lead

재고6,464

200V

5A

920mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

1µA @ 200V

-

Surface Mount

8-SMD, Flat Lead

8-TSOP

150°C (Max)

RLS4148TE-11

Rohm Semiconductor

DIODE GEN PURP 75V 150MA LLDS

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 5µA @ 75V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: LLDS
Operating Temperature - Junction: -65°C ~ 200°C

패키지: DO-213AC, MINI-MELF, SOD-80

재고7,992,504

75V

150mA

1V @ 10mA

Small Signal =< 200mA (Io), Any Speed

4ns

5µA @ 75V

4pF @ 0V, 1MHz

Surface Mount

DO-213AC, MINI-MELF, SOD-80

LLDS

-65°C ~ 200°C

RLS-73TE-11

Rohm Semiconductor

DIODE GEN PURP 80V 130MA LLDS

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 130mA
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 500nA @ 80V
Capacitance @ Vr, F: 2pF @ 0.5V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: LLDS
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-213AC, MINI-MELF, SOD-80

재고182,976

80V

130mA

1.2V @ 100mA

Small Signal =< 200mA (Io), Any Speed

4ns

500nA @ 80V

2pF @ 0.5V, 1MHz

Surface Mount

DO-213AC, MINI-MELF, SOD-80

LLDS

-65°C ~ 175°C

RB721Q-40T-77

Rohm Semiconductor

DIODE SCHOTTKY 40V 30MA MSD

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 30mA
Voltage - Forward (Vf) (Max) @ If: 370mV @ 1mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500nA @ 25V
Capacitance @ Vr, F: 2pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AG, DO-34, Axial
Supplier Device Package: MSD
Operating Temperature - Junction: 125°C (Max)

패키지: DO-204AG, DO-34, Axial

재고5,776

40V

30mA

370mV @ 1mA

Small Signal =< 200mA (Io), Any Speed

-

500nA @ 25V

2pF @ 1V, 1MHz

Through Hole

DO-204AG, DO-34, Axial

MSD

125°C (Max)

RB441Q-40T-77

Rohm Semiconductor

DIODE SCHOTTKY 40V 100MA MSD

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 550mV @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 40V
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AG, DO-34, Axial
Supplier Device Package: MSD
Operating Temperature - Junction: 125°C (Max)

패키지: DO-204AG, DO-34, Axial

재고3,904

40V

100mA

550mV @ 100mA

Small Signal =< 200mA (Io), Any Speed

-

100µA @ 40V

6pF @ 10V, 1MHz

Through Hole

DO-204AG, DO-34, Axial

MSD

125°C (Max)

1SS244T-77

Rohm Semiconductor

DIODE GEN PURP 220V 200MA MSD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 220V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 10µA @ 220V
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AG, DO-34, Axial
Supplier Device Package: MSD
Operating Temperature - Junction: 175°C (Max)

패키지: DO-204AG, DO-34, Axial

재고5,552

220V

200mA

1.5V @ 200mA

Small Signal =< 200mA (Io), Any Speed

75ns

10µA @ 220V

3pF @ 0V, 1MHz

Through Hole

DO-204AG, DO-34, Axial

MSD

175°C (Max)

1SR139-600T-32

Rohm Semiconductor

DIODE GEN PURP 600V 1A MSR

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-41 Mini, Axial
Supplier Device Package: MSR
Operating Temperature - Junction: 150°C (Max)

패키지: DO-41 Mini, Axial

재고7,520

600V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 600V

-

Through Hole

DO-41 Mini, Axial

MSR

150°C (Max)

1SR139-400T-32

Rohm Semiconductor

DIODE GEN PURP 400V 1A MSR

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-41 Mini, Axial
Supplier Device Package: MSR
Operating Temperature - Junction: 150°C (Max)

패키지: DO-41 Mini, Axial

재고12,756

400V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 400V

-

Through Hole

DO-41 Mini, Axial

MSR

150°C (Max)

1N4148T-77

Rohm Semiconductor

DIODE GEN PURP 75V 150MA GSD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 5µA @ 75V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: GSD
Operating Temperature - Junction: -65°C ~ 200°C

패키지: DO-204AH, DO-35, Axial

재고6,816

75V

150mA

1V @ 10mA

Small Signal =< 200mA (Io), Any Speed

4ns

5µA @ 75V

4pF @ 0V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

GSD

-65°C ~ 200°C

1N4148T-72

Rohm Semiconductor

DIODE GEN PURP 75V 150MA GSD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 5µA @ 75V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: GSD
Operating Temperature - Junction: -65°C ~ 200°C

패키지: DO-204AH, DO-35, Axial

재고960,120

75V

150mA

1V @ 10mA

Small Signal =< 200mA (Io), Any Speed

4ns

5µA @ 75V

4pF @ 0V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

GSD

-65°C ~ 200°C

RLS4448TE-11

Rohm Semiconductor

DIODE GEN PURP 75V 150MA LLDS

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 5µA @ 75V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: LLDS
Operating Temperature - Junction: -65°C ~ 200°C

패키지: DO-213AC, MINI-MELF, SOD-80

재고54,000

75V

150mA

1V @ 100mA

Small Signal =< 200mA (Io), Any Speed

4ns

5µA @ 75V

4pF @ 0V, 1MHz

Surface Mount

DO-213AC, MINI-MELF, SOD-80

LLDS

-65°C ~ 200°C

RLS4150TE-11

Rohm Semiconductor

DIODE GEN PURP 50V 200MA LLDS

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 100nA @ 50V
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: LLDS
Operating Temperature - Junction: -65°C ~ 200°C

패키지: DO-213AC, MINI-MELF, SOD-80

재고9,792

50V

200mA

1V @ 200mA

Small Signal =< 200mA (Io), Any Speed

4ns

100nA @ 50V

2.5pF @ 0V, 1MHz

Surface Mount

DO-213AC, MINI-MELF, SOD-80

LLDS

-65°C ~ 200°C

RLS245TE-11

Rohm Semiconductor

DIODE GEN PURP 220V 200MA LLDS

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 220V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 10µA @ 220V
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: LLDS
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-213AC, MINI-MELF, SOD-80

재고3,695,856

220V

200mA

1.5V @ 200mA

Small Signal =< 200mA (Io), Any Speed

75ns

10µA @ 220V

3pF @ 0V, 1MHz

Surface Mount

DO-213AC, MINI-MELF, SOD-80

LLDS

-65°C ~ 175°C

1SS133T-77

Rohm Semiconductor

DIODE GEN PURP 80V 130MA MSD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 130mA
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 500nA @ 80V
Capacitance @ Vr, F: 2pF @ 0.5V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AG, DO-34, Axial
Supplier Device Package: MSD
Operating Temperature - Junction: 175°C (Max)

패키지: DO-204AG, DO-34, Axial

재고125,832

80V

130mA

1.2V @ 100mA

Small Signal =< 200mA (Io), Any Speed

4ns

500nA @ 80V

2pF @ 0.5V, 1MHz

Through Hole

DO-204AG, DO-34, Axial

MSD

175°C (Max)

1N4148T-73

Rohm Semiconductor

DIODE GEN PURP 75V 150MA GSD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 5µA @ 75V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: GSD
Operating Temperature - Junction: -65°C ~ 200°C

패키지: DO-204AH, DO-35, Axial

재고6,528

75V

150mA

1V @ 10mA

Small Signal =< 200mA (Io), Any Speed

4ns

5µA @ 75V

4pF @ 0V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

GSD

-65°C ~ 200°C

RLS139TE-11

Rohm Semiconductor

DIODE GEN PURP 80V 130MA LLDS

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 130mA
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 20nA @ 30V
Capacitance @ Vr, F: 5pF @ 0.5V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: LLDS
Operating Temperature - Junction: 175°C (Max)

패키지: DO-213AC, MINI-MELF, SOD-80

재고3,152

80V

130mA

1.2V @ 100mA

Small Signal =< 200mA (Io), Any Speed

50ns

20nA @ 30V

5pF @ 0.5V, 1MHz

Surface Mount

DO-213AC, MINI-MELF, SOD-80

LLDS

175°C (Max)

SCS120KGC

Rohm Semiconductor

DIODE SCHOTTKY 1.2KV 20A TO220AC

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.75V @ 20A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 400µA @ 1200V
Capacitance @ Vr, F: 1300pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)

패키지: TO-220-2

재고6,272

1200V

20A

1.75V @ 20A

No Recovery Time > 500mA (Io)

0ns

400µA @ 1200V

1300pF @ 1V, 1MHz

Through Hole

TO-220-2

TO-220AC

175°C (Max)

SCS110KGC

Rohm Semiconductor

DIODE SCHOTTKY 1.2KV 10A TO220AC

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 10A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.75V @ 10A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 200µA @ 1200V
Capacitance @ Vr, F: 650pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)

패키지: TO-220-2

재고4,480

1200V

10A (DC)

1.75V @ 10A

No Recovery Time > 500mA (Io)

0ns

200µA @ 1200V

650pF @ 1V, 1MHz

Through Hole

TO-220-2

TO-220AC

175°C (Max)

SCS105KGC

Rohm Semiconductor

DIODE SCHOTTKY 1.2KV 5A TO220AC

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 5A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.75V @ 5A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 100µA @ 1200V
Capacitance @ Vr, F: 325pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)

패키지: TO-220-2

재고5,616

1200V

5A (DC)

1.75V @ 5A

No Recovery Time > 500mA (Io)

0ns

100µA @ 1200V

325pF @ 1V, 1MHz

Through Hole

TO-220-2

TO-220AC

175°C (Max)

SCS110AMC

Rohm Semiconductor

DIODE SCHOTTKY 600V 10A TO220FM

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 10A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 200µA @ 600V
Capacitance @ Vr, F: 430pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220FM
Operating Temperature - Junction: 150°C (Max)

패키지: TO-220-2

재고4,912

600V

10A (DC)

1.7V @ 10A

No Recovery Time > 500mA (Io)

0ns

200µA @ 600V

430pF @ 1V, 1MHz

Through Hole

TO-220-2

TO-220FM

150°C (Max)