페이지 5 - Rohm Semiconductor 제품 - 트랜지스터 - FET, MOSFET - 어레이 | Heisener Electronics
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Rohm Semiconductor 제품 - 트랜지스터 - FET, MOSFET - 어레이

기록 313
페이지  5/12
이미지
부품 번호
제조업체
설명
패키지
재고
수량
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
SP8M4TB
Rohm Semiconductor

MOSFET 30V 9A/7A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9A, 7A
  • Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
패키지: -
Request a Quote
-
30V
9A, 7A
18mOhm @ 9A, 10V
2.5V @ 1mA
21nC @ 5V
1190pF @ 10V
2W (Ta)
150°C
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
HP8M51TB1
Rohm Semiconductor

MOSFET N/P-CH 100V 4.5A 8HSOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 170mOhm @ 4.5A, 10V, 290mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 26.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 50V, 1430pF @ 50V
  • Power - Max: 3W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-HSOP
패키지: -
재고7,344
-
100V
4.5A (Ta)
170mOhm @ 4.5A, 10V, 290mOhm @ 4.5A, 10V
2.5V @ 1mA
15nC @ 10V, 26.2nC @ 10V
600pF @ 50V, 1430pF @ 50V
3W (Ta)
150°C (TJ)
Surface Mount
8-PowerTDFN
8-HSOP
US5K3TR
Rohm Semiconductor

MOSFET 2N-CH 30V 1.5A TUMT5

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
SH8MB4TB1
Rohm Semiconductor

40V 4.5A/5.5A, DUAL NCH+PCH, SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 5.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V, 46mOhm @ 5.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V, 17.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V, 920pF @ 20V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
패키지: -
Request a Quote
-
40V
4.5A (Ta), 5.5A (Ta)
55mOhm @ 4.5A, 10V, 46mOhm @ 5.5A, 10V
2.5V @ 1mA
3.5nC @ 10V, 17.2nC @ 10V
150pF @ 20V, 920pF @ 20V
2W (Ta)
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
UT6KB5TCR
Rohm Semiconductor

MOSFET 2N-CH 40V 5A HUML2020L8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-PowerUDFN
  • Supplier Device Package: HUML2020L8
패키지: -
재고6,954
-
40V
5A (Ta)
48mOhm @ 5A, 10V
2.5V @ 1mA
3.5nC @ 10V
150pF @ 20V
2W (Ta)
150°C (TJ)
Surface Mount
6-PowerUDFN
HUML2020L8
SP8J62TB1
Rohm Semiconductor

MOSFET 2P-CH 30V 8SOP

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
SH8MB5TB1
Rohm Semiconductor

MOSFET N/P-CH 40V 8.5A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 19.4mOhm @ 8.5A, 10V, 16.8mOhm @ 8.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 20V, 51nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 20V, 2870pF @ 20V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
패키지: -
재고18,546
-
40V
8.5A (Ta)
19.4mOhm @ 8.5A, 10V, 16.8mOhm @ 8.5A, 10V
2.5V @ 1mA
10.6nC @ 20V, 51nC @ 20V
530pF @ 20V, 2870pF @ 20V
2W (Ta)
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
BSM400D12P2G003
Rohm Semiconductor

SIC 2N-CH 1200V 400A MODULE

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 400A (Tc)
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 4V @ 85mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 38000pF @ 10V
  • Power - Max: 2450W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: -
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
재고12
-
1200V (1.2kV)
400A (Tc)
-
4V @ 85mA
-
38000pF @ 10V
2450W (Tc)
-40°C ~ 150°C (TJ)
-
Module
Module
BSM600D12P4G103
Rohm Semiconductor

SIC 2N-CH 1200V 567A MODULE

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 567A (Tc)
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 4.8V @ 291.2mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 59000pF @ 10V
  • Power - Max: 1.78kW (Tc)
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
재고12
-
1200V (1.2kV)
567A (Tc)
-
4.8V @ 291.2mA
-
59000pF @ 10V
1.78kW (Tc)
175°C (TJ)
Chassis Mount
Module
Module
HT8KC5TB1
Rohm Semiconductor

60V 10A, DUAL NCH+NCH, HSMT8, PO

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 10A (Tc)
  • Rds On (Max) @ Id, Vgs: 90mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V
  • Power - Max: 2W (Ta), 13W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: 8-HSMT (3.2x3)
패키지: -
재고9,000
-
60V
3.5A (Ta), 10A (Tc)
90mOhm @ 3.5A, 10V
2.5V @ 1mA
3.1nC @ 10V
135pF @ 30V
2W (Ta), 13W (Tc)
150°C (TJ)
Surface Mount
8-PowerVDFN
8-HSMT (3.2x3)
SH8KE6TB1
Rohm Semiconductor

MOSFET 2N-CH 100V 4.5A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 58mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 50V
  • Power - Max: 1.4W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
패키지: -
재고4,629
-
100V
4.5A (Ta)
58mOhm @ 4.5A, 10V
2.5V @ 1mA
6.7nC @ 10V
305pF @ 50V
1.4W (Ta)
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
US6M2GTR
Rohm Semiconductor

MOSFET N/P-CH 30V/20V 1.5A TUMT6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V, 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A, 1A
  • Rds On (Max) @ Id, Vgs: 240mOhm @ 1.5A, 4.5V, 390mOhm @ 1A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA, 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V, 2.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V, 150pF @ 10V
  • Power - Max: 1W
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: TUMT6
패키지: -
Request a Quote
-
30V, 20V
1.5A, 1A
240mOhm @ 1.5A, 4.5V, 390mOhm @ 1A, 4.5V
1.5V @ 1mA, 2V @ 1mA
2.2nC @ 4.5V, 2.1nC @ 4.5V
80pF @ 10V, 150pF @ 10V
1W
150°C
Surface Mount
6-SMD, Flat Leads
TUMT6
SH8KA1GZETB
Rohm Semiconductor

MOSFET 2N-CH 30V 4.5A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 80mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 125pf @ 15V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
패키지: -
재고22,230
-
30V
4.5A (Ta)
80mOhm @ 4.5A, 10V
2.5V @ 1mA
3nC @ 10V
125pf @ 15V
2W (Ta)
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
QH8ME5TCR
Rohm Semiconductor

100V 2A, DUAL NCH+PCH, TSMT8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Rds On (Max) @ Id, Vgs: 202mOhm @ 2A, 10V, 270mOhm @ 2A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V, 19.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V, 590pF @ 50V
  • Power - Max: 1.1W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: TSMT8
패키지: -
Request a Quote
-
100V
2A (Ta)
202mOhm @ 2A, 10V, 270mOhm @ 2A, 10V
2.5V @ 1mA
2.8nC @ 10V, 19.7nC @ 10V
90pF @ 50V, 590pF @ 50V
1.1W (Ta)
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
TSMT8
SH8JB5TB1
Rohm Semiconductor

MOSFET 2P-CH 40V 8.5A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 15.3mOhm @ 8.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2870pF @ 20V
  • Power - Max: 1.4W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
패키지: -
재고38,187
-
40V
8.5A (Ta)
15.3mOhm @ 8.5A, 10V
2.5V @ 1mA
51nC @ 10V
2870pF @ 20V
1.4W (Ta)
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
SH8KE7TB1
Rohm Semiconductor

MOSFET 2N-CH 100V 8A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
  • Rds On (Max) @ Id, Vgs: 20.9mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 19.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 50V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
패키지: -
재고7,350
-
100V
8A (Ta)
20.9mOhm @ 8A, 10V
2.5V @ 1mA
19.8nC @ 10V
1110pF @ 50V
2W (Ta)
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
HT8KC6TB1
Rohm Semiconductor

60V 15A, DUAL NCH+NCH, HSMT8, PO

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 15A (Tc)
  • Rds On (Max) @ Id, Vgs: 29mOhm @ 6.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 30V
  • Power - Max: 2W (Ta), 14W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: 8-HSMT (3.2x3)
패키지: -
Request a Quote
-
60V
6.5A (Ta), 15A (Tc)
29mOhm @ 6.5A, 10V
2.5V @ 1mA
7.6nC @ 10V
460pF @ 30V
2W (Ta), 14W (Tc)
150°C (TJ)
Surface Mount
8-PowerVDFN
8-HSMT (3.2x3)
SP8M3FU6TB1
Rohm Semiconductor

MOSFET N/P-CH 30V 5A/4.5A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 4.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V, 56mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V, 8.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V, 850pF @ 10V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
패키지: -
Request a Quote
-
30V
5A (Ta), 4.5A (Ta)
51mOhm @ 5A, 10V, 56mOhm @ 4.5A, 10V
2.5V @ 1mA
3.9nC @ 5V, 8.5nC @ 5V
230pF @ 10V, 850pF @ 10V
2W (Ta)
150°C
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
SP8M5FRATB
Rohm Semiconductor

MOSFET N/P-CH 30V 6A/7A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 7A (Ta)
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V, 28mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 5V, 25nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V, 2600pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
패키지: -
재고30
-
30V
6A (Ta), 7A (Ta)
30mOhm @ 6A, 10V, 28mOhm @ 7A, 10V
2.5V @ 1mA
7.2nC @ 5V, 25nC @ 5V
520pF @ 10V, 2600pF @ 10V
2W
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
QH8JE5TCR
Rohm Semiconductor

-100V DUAL PCH+PCH, TSMT8, POWER

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Rds On (Max) @ Id, Vgs: 270mOhm @ 2A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 19.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 50V
  • Power - Max: 1.1W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: TSMT8
패키지: -
Request a Quote
-
100V
2A (Ta)
270mOhm @ 2A, 10V
2.5V @ 1mA
19.7nC @ 10V
590pF @ 50V
1.1W (Ta)
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
TSMT8
HP8ME5TB1
Rohm Semiconductor

MOSFET N/P-CH 100V 3A/8.5A 8HSOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 8.5A (Tc), 3A (Ta), 8A (Tc)
  • Rds On (Max) @ Id, Vgs: 193mOhm @ 3A, 10V, 273mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V, 19.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V, 590pF @ 50V
  • Power - Max: 3W (Ta), 20W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-HSOP
패키지: -
재고3,549
-
100V
3A (Ta), 8.5A (Tc), 3A (Ta), 8A (Tc)
193mOhm @ 3A, 10V, 273mOhm @ 3A, 10V
2.5V @ 1mA
2.9nC @ 10V, 19.7nC @ 10V
90pF @ 50V, 590pF @ 50V
3W (Ta), 20W (Tc)
150°C (TJ)
Surface Mount
8-PowerTDFN
8-HSOP
SP8M3FU7TB1
Rohm Semiconductor

MOSFET N/P-CH 30V 5A/4.5A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 4.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V, 56mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V, 8.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V, 850pF @ 10V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
패키지: -
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30V
5A (Ta), 4.5A (Ta)
51mOhm @ 5A, 10V, 56mOhm @ 4.5A, 10V
2.5V @ 1mA
3.9nC @ 5V, 8.5nC @ 5V
230pF @ 10V, 850pF @ 10V
2W (Ta)
150°C
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
SP8K1FRATB
Rohm Semiconductor

MOSFET 2N-CH 30V 5A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V
  • Power - Max: 1.4W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
패키지: -
재고7,401
-
30V
5A (Ta)
51mOhm @ 5A, 10V
2.5V @ 1mA
5.5nC @ 5V
230pF @ 10V
1.4W (Ta)
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
SP8K31HZGTB
Rohm Semiconductor

MOSFET 2N-CH 60V 3.5A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 120mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
패키지: -
재고14,673
-
60V
3.5A (Ta)
120mOhm @ 3.5A, 10V
2.5V @ 1mA
5.2nC @ 5V
250pF @ 10V
2W (Ta)
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
HP8M31TB1
Rohm Semiconductor

MOSFET N/P-CH 60V 8.5A 8HSOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 65mOhm @ 8.5A, 10V, 70mOhm @ 8.5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V, 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 30V, 2300pF @ 30V
  • Power - Max: 3W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-HSOP
패키지: -
재고3
-
60V
8.5A (Ta)
65mOhm @ 8.5A, 10V, 70mOhm @ 8.5A, 10V
3V @ 1mA
12.3nC @ 10V, 38nC @ 10V
470pF @ 30V, 2300pF @ 30V
3W (Ta)
150°C (TJ)
Surface Mount
8-PowerTDFN
8-HSOP
SP8K31FRATB
Rohm Semiconductor

MOSFET 2N-CH 60V 3.5A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 120mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
패키지: -
Request a Quote
-
60V
3.5A (Ta)
120mOhm @ 3.5A, 10V
2.5V @ 1mA
5.2nC @ 5V
250pF @ 10V
2W
150°C
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
SP8K52HZGTB
Rohm Semiconductor

MOSFET 2N-CH 100V 3A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
패키지: -
재고7,062
-
100V
3A (Ta)
170mOhm @ 3A, 10V
2.5V @ 1mA
8.5nC @ 5V
610pF @ 25V
2W (Ta)
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
SP8M10FRATB
Rohm Semiconductor

MOSFET N/P-CH 30V 7A/4.5A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate, 4V Drive
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 4.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V, 56mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 5V, 8.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V, 850pF @ 10V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
패키지: -
재고3,543
Logic Level Gate, 4V Drive
30V
7A (Ta), 4.5A (Ta)
25mOhm @ 7A, 10V, 56mOhm @ 4.5A, 10V
2.5V @ 1mA
8.4nC @ 5V, 8.5nC @ 5V
600pF @ 10V, 850pF @ 10V
2W (Ta)
150°C
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP