페이지 6 - Rohm Semiconductor 제품 - 트랜지스터 - FET, MOSFET - 어레이 | Heisener Electronics
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Rohm Semiconductor 제품 - 트랜지스터 - FET, MOSFET - 어레이

기록 313
페이지  6/12
이미지
부품 번호
제조업체
설명
패키지
재고
수량
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
TT8K1TR
Rohm Semiconductor

MOSFET 2N-CH 20V 2.5A TSST8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate, 1.5V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A
  • Rds On (Max) @ Id, Vgs: 72 mOhm @ 2.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 10V
  • Power - Max: 1W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 8-TSST
패키지: 8-SMD, Flat Lead
재고25,026
Logic Level Gate, 1.5V Drive
20V
2.5A
72 mOhm @ 2.5A, 4.5V
1V @ 1mA
3.6nC @ 4.5V
260pF @ 10V
1W
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
8-TSST
TT8M1TR
Rohm Semiconductor

MOSFET N/P-CH 20V 2.5A TSST8

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate, 1.5V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A
  • Rds On (Max) @ Id, Vgs: 72 mOhm @ 2.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 10V
  • Power - Max: 1W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 8-TSST
패키지: 8-SMD, Flat Lead
재고24,150
Logic Level Gate, 1.5V Drive
20V
2.5A
72 mOhm @ 2.5A, 4.5V
1V @ 1mA
3.6nC @ 4.5V
260pF @ 10V
1W
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
8-TSST
hot QS8J1TR
Rohm Semiconductor

MOSFET 2P-CH 12V 4.5A TSMT8

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: 29 mOhm @ 4.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 31nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 6V
  • Power - Max: 1.5W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: TSMT8
패키지: 8-SMD, Flat Lead
재고5,168
Logic Level Gate
12V
4.5A
29 mOhm @ 4.5A, 4.5V
1V @ 1mA
31nC @ 4.5V
2450pF @ 6V
1.5W
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
TSMT8
TT8J2TR
Rohm Semiconductor

MOSFET 2P-CH 30V 2.5A TSST8

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A
  • Rds On (Max) @ Id, Vgs: 84 mOhm @ 2.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V
  • Power - Max: 1.25W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 8-TSST
패키지: 8-SMD, Flat Lead
재고45,180
Logic Level Gate
30V
2.5A
84 mOhm @ 2.5A, 10V
2.5V @ 1mA
4.8nC @ 5V
460pF @ 10V
1.25W
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
8-TSST
hot QS6K1TR
Rohm Semiconductor

MOSFET 2N-CH 30V 1A TSMT6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1A
  • Rds On (Max) @ Id, Vgs: 238 mOhm @ 1A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 77pF @ 10V
  • Power - Max: 1.25W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSMT6 (SC-95)
패키지: SOT-23-6 Thin, TSOT-23-6
재고578,508
Logic Level Gate
30V
1A
238 mOhm @ 1A, 4.5V
1.5V @ 1mA
2.4nC @ 4.5V
77pF @ 10V
1.25W
150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSMT6 (SC-95)
hot QS6J11TR
Rohm Semiconductor

MOSFET 2P-CH 12V 2A TSMT6

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 2A
  • Rds On (Max) @ Id, Vgs: 105 mOhm @ 2A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 6V
  • Power - Max: 600mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSMT6 (SC-95)
패키지: SOT-23-6 Thin, TSOT-23-6
재고464,472
Logic Level Gate
12V
2A
105 mOhm @ 2A, 4.5V
1V @ 1mA
6.5nC @ 4.5V
770pF @ 6V
600mW
150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSMT6 (SC-95)
hot QS6M4TR
Rohm Semiconductor

MOSFET N/P-CH 30V/20V 1.5A TSMT6

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V, 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A
  • Rds On (Max) @ Id, Vgs: 230 mOhm @ 1.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V
  • Power - Max: 1.25W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSMT6 (SC-95)
패키지: SOT-23-6 Thin, TSOT-23-6
재고313,884
Logic Level Gate
30V, 20V
1.5A
230 mOhm @ 1.5A, 4.5V
1.5V @ 1mA
1.6nC @ 4.5V
80pF @ 10V
1.25W
150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSMT6 (SC-95)
hot UM6K1NTN
Rohm Semiconductor

MOSFET 2N-CH 30V .1A SOT-363

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 100mA
  • Rds On (Max) @ Id, Vgs: 8 Ohm @ 10mA, 4V
  • Vgs(th) (Max) @ Id: 1.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 5V
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: UMT6
패키지: 6-TSSOP, SC-88, SOT-363
재고3,766,380
Logic Level Gate
30V
100mA
8 Ohm @ 10mA, 4V
1.5V @ 100µA
-
13pF @ 5V
150mW
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
UMT6
hot UM6K31NTN
Rohm Semiconductor

MOSFET 2N-CH 60V 0.25A UMT6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate, 2.5V Drive
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 250mA
  • Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 250mA, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: UMT6
패키지: 6-TSSOP, SC-88, SOT-363
재고782,052
Logic Level Gate, 2.5V Drive
60V
250mA
2.4 Ohm @ 250mA, 10V
2.3V @ 1mA
-
15pF @ 25V
150mW
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
UMT6
EM6K34T2CR
Rohm Semiconductor

MOSFET 2N-CH 50V 0.2A EMT6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate, 0.9V Drive
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 200mA
  • Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 200mA, 4.5V
  • Vgs(th) (Max) @ Id: 800mV @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 10V
  • Power - Max: 120mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: EMT6
패키지: SOT-563, SOT-666
재고260,514
Logic Level Gate, 0.9V Drive
50V
200mA
2.2 Ohm @ 200mA, 4.5V
800mV @ 1mA
-
26pF @ 10V
120mW
150°C (TJ)
Surface Mount
SOT-563, SOT-666
EMT6
BSM120D12P2C005
Rohm Semiconductor

MOSFET 2N-CH 1200V 120A MODULE

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 120A
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 2.7V @ 22mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 10V
  • Power - Max: 780W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: -
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: Module
재고4,992
Standard
1200V (1.2kV)
120A
-
2.7V @ 22mA
-
14000pF @ 10V
780W
-40°C ~ 150°C (TJ)
-
Module
Module
hot SH8K32TB1
Rohm Semiconductor

MOSFET 2N-CH 60V 4.5A SOP8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: 65 mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP (5.0x6.0)
패키지: 8-SOIC (0.154", 3.90mm Width)
재고22,524
Logic Level Gate
60V
4.5A
65 mOhm @ 4.5A, 10V
2.5V @ 1mA
10nC @ 5V
500pF @ 10V
2W
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP (5.0x6.0)
hot US6M2TR
Rohm Semiconductor

MOSFET N/P-CH 30V/20V TUMT6

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V, 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A, 1A
  • Rds On (Max) @ Id, Vgs: 240 mOhm @ 1.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V
  • Power - Max: 1W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: TUMT6
패키지: 6-SMD, Flat Leads
재고1,609,164
Standard
30V, 20V
1.5A, 1A
240 mOhm @ 1.5A, 4.5V
1.5V @ 1mA
2.2nC @ 4.5V
80pF @ 10V
1W
150°C (TJ)
Surface Mount
6-SMD, Flat Leads
TUMT6
hot QS6K21TR
Rohm Semiconductor

MOSFET 2N-CH 45V 1A TSMT6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 45V
  • Current - Continuous Drain (Id) @ 25°C: 1A
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.25W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSMT6 (SC-95)
패키지: SOT-23-6 Thin, TSOT-23-6
재고361,212
Standard
45V
1A
-
1.5V @ 1mA
-
-
1.25W
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSMT6 (SC-95)
hot QS5K2TR
Rohm Semiconductor

MOSFET 2N-CH 30V 2A TSMT5

  • FET Type: 2 N-Channel (Dual) Common Source
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2A
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 10V
  • Power - Max: 1.25W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-5 Thin, TSOT-23-5
  • Supplier Device Package: TSMT5
패키지: SOT-23-5 Thin, TSOT-23-5
재고36,000
Logic Level Gate
30V
2A
100 mOhm @ 2A, 4.5V
1.5V @ 1mA
3.9nC @ 4.5V
175pF @ 10V
1.25W
150°C (TJ)
Surface Mount
SOT-23-5 Thin, TSOT-23-5
TSMT5
EM6M2T2R
Rohm Semiconductor

MOSFET N/P-CH 20V 0.2A EMT6

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 200mA
  • Rds On (Max) @ Id, Vgs: 1 Ohm @ 200mA, 4V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: EMT6
패키지: SOT-563, SOT-666
재고1,647,552
Logic Level Gate
20V
200mA
1 Ohm @ 200mA, 4V
1V @ 1mA
-
25pF @ 10V
150mW
150°C (TJ)
Surface Mount
SOT-563, SOT-666
EMT6
HP8KC7TB1
Rohm Semiconductor

60V 24A, DUAL NCH+NCH, HSOP8, PO

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 24A (Tc)
  • Rds On (Max) @ Id, Vgs: 11.5mOhm @ 13.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 30V
  • Power - Max: 3W (Ta), 26W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-HSOP
패키지: -
재고7,410
-
60V
13.5A (Ta), 24A (Tc)
11.5mOhm @ 13.5A, 10V
2.5V @ 1mA
22nC @ 10V
1400pF @ 30V
3W (Ta), 26W (Tc)
150°C (TJ)
Surface Mount
8-PowerTDFN
8-HSOP
HT8KE6TB1
Rohm Semiconductor

MOSFET 2N-CH 100V 4.5A 8HSMT

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 13A (Tc)
  • Rds On (Max) @ Id, Vgs: 57mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 50V
  • Power - Max: 2W (Ta), 14W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: 8-HSMT (3.2x3)
패키지: -
재고12,000
-
100V
4.5A (Ta), 13A (Tc)
57mOhm @ 4.5A, 10V
2.5V @ 1mA
6.7nC @ 10V
305pF @ 50V
2W (Ta), 14W (Tc)
150°C (TJ)
Surface Mount
8-PowerVDFN
8-HSMT (3.2x3)
SH8K25GZ0TB1
Rohm Semiconductor

MOSFET 2N-CH 40V 5.2A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
  • Rds On (Max) @ Id, Vgs: 85mOhm @ 5.2A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 10V
  • Power - Max: 1.4W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
패키지: -
재고52,380
-
40V
5.2A (Ta)
85mOhm @ 5.2A, 10V
2.5V @ 1mA
1.7nC @ 5V
100pF @ 10V
1.4W (Ta)
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
SH8K32GZETB
Rohm Semiconductor

MOSFET 2N-CH 60V 4.5A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 65mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
  • Power - Max: 1.4W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
패키지: -
재고52,338
-
60V
4.5A (Ta)
65mOhm @ 4.5A, 10V
2.5V @ 1mA
10nC @ 5V
500pF @ 10V
1.4W (Ta)
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
QH8KA3TCR
Rohm Semiconductor

MOSFET 2N-CH 30V 9A TSMT8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
  • Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V
  • Power - Max: 1.5W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: TSMT8
패키지: -
재고8,760
-
30V
9A (Ta)
16mOhm @ 9A, 10V
2.5V @ 1mA
15.5nC @ 10V
640pF @ 15V
1.5W (Ta)
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
TSMT8
SP8M24FRATB
Rohm Semiconductor

MOSFET N/P-CH 45V 4.5A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 45V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V, 63mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V, 18.2nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V, 1700pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
패키지: -
재고6,612
-
45V
4.5A (Ta), 3.5A (Ta)
46mOhm @ 4.5A, 10V, 63mOhm @ 3.5A, 10V
2.5V @ 1mA
9.6nC @ 5V, 18.2nC @ 5V
550pF @ 10V, 1700pF @ 10V
2W
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
SP8M24HZGTB
Rohm Semiconductor

MOSFET N/P-CH 45V 4.5A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 45V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V, 63mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V, 18.2nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V, 1700pF @ 10V
  • Power - Max: 1.4W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
패키지: -
재고6,465
-
45V
4.5A (Ta), 3.5A (Ta)
46mOhm @ 4.5A, 10V, 63mOhm @ 3.5A, 10V
2.5V @ 1mA
9.6nC @ 5V, 18.2nC @ 5V
550pF @ 10V, 1700pF @ 10V
1.4W (Ta)
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
HT8KE5TB1
Rohm Semiconductor

MOSFET 2N-CH 100V 2.5A/7A 8HSMT

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 7A (Tc)
  • Rds On (Max) @ Id, Vgs: 193mOhm @ 2.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V
  • Power - Max: 2W (Ta), 13W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: 8-HSMT (3.2x3)
패키지: -
재고8,970
-
100V
2.5A (Ta), 7A (Tc)
193mOhm @ 2.5A, 10V
2.5V @ 1mA
2.9nC @ 10V
90pF @ 50V
2W (Ta), 13W (Tc)
150°C (TJ)
Surface Mount
8-PowerVDFN
8-HSMT (3.2x3)
SH8KA7GZETB
Rohm Semiconductor

MOSFET 2N-CH 30V 15A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
  • Rds On (Max) @ Id, Vgs: 9.3mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3320pF @ 15V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
패키지: -
재고7,461
-
30V
15A (Ta)
9.3mOhm @ 15A, 10V
2.5V @ 1mA
81nC @ 10V
3320pF @ 15V
2W (Ta)
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
SH8K10SGZETB
Rohm Semiconductor

MOSFET 2N-CH 30V 7A/8.5A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 8.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V, 19.6mOhm @ 8.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 16.8nC @ 5V, 17.8nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V, 830pF @ 10V
  • Power - Max: 1.4W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
패키지: -
재고7,425
-
30V
7A (Ta), 8.5A (Ta)
24mOhm @ 7A, 10V, 19.6mOhm @ 8.5A, 10V
2.5V @ 1mA
16.8nC @ 5V, 17.8nC @ 5V
660pF @ 10V, 830pF @ 10V
1.4W (Ta)
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
SP8M21FRATB
Rohm Semiconductor

MOSFET N/P-CH 45V 6A/4A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 45V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4A (Ta)
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V, 46mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 5V, 28nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V, 2400pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
패키지: -
재고7,500
-
45V
6A (Ta), 4A (Ta)
25mOhm @ 6A, 10V, 46mOhm @ 4A, 10V
2.5V @ 1mA
21.6nC @ 5V, 28nC @ 5V
1400pF @ 10V, 2400pF @ 10V
2W
150°C
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
SP8M21HZGTB
Rohm Semiconductor

MOSFET N/P-CH 45V 6A/4A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 45V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4A (Ta)
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V, 46mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 5V, 28nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V, 2400pF @10V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
패키지: -
재고5,970
-
45V
6A (Ta), 4A (Ta)
25mOhm @ 6A, 10V, 46mOhm @ 4A, 10V
2.5V @ 1mA
21.6nC @ 5V, 28nC @ 5V
1400pF @ 10V, 2400pF @10V
2W (Ta)
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP