페이지 3 - STMicroelectronics 제품 - 다이오드 - 정류기 - 단일 | Heisener Electronics
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STMicroelectronics 제품 - 다이오드 - 정류기 - 단일

기록 937
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이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
STPS10M60SF
STMicroelectronics

DIODE SCHOTTKY 60V 10A TO277A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 650 mV @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 60 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
재고17,883
60 V
10A
650 mV @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
-
50 µA @ 60 V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-40°C ~ 175°C
STTH802SFY
STMicroelectronics

DIODE GEN PURP 200V 8A TO277A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 6 µA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
재고59,346
200 V
8A
-
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
6 µA @ 200 V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-40°C ~ 175°C
STPS5H100SF
STMicroelectronics

DIODE SCHOTTKY 100V 5A TO277A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 8 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: 175°C (Max)
패키지: -
재고22,146
100 V
5A
-
Fast Recovery =< 500ns, > 200mA (Io)
-
8 µA @ 100 V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
175°C (Max)
STPSC8H065DLF
STMicroelectronics

DIODE SIL CARB 650V 8A POWERFLAT

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 8 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 80 µA @ 650 V
  • Capacitance @ Vr, F: 460pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerFlat™ (8x8) HV
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
재고17,742
650 V
8A
1.55 V @ 8 A
No Recovery Time > 500mA (Io)
0 ns
80 µA @ 650 V
460pF @ 0V, 1MHz
Surface Mount
8-PowerVDFN
PowerFlat™ (8x8) HV
-40°C ~ 175°C
STPS1045SFY
STMicroelectronics

DIODE SCHOTTKY 45V 10A TO277A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 45 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
재고27,747
45 V
10A
-
Fast Recovery =< 500ns, > 200mA (Io)
-
50 µA @ 45 V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-40°C ~ 175°C
FERD2045SB-TR
STMicroelectronics

DIODE FERD 45V 20A DPAK

  • Diode Type: FERD (Field Effect Rectifier Diode)
  • Voltage - DC Reverse (Vr) (Max): 45 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 550 mV @ 20 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 600 µA @ 45 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: -
재고31,422
45 V
20A
550 mV @ 20 A
Standard Recovery >500ns, > 200mA (Io)
-
600 µA @ 45 V
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
DPAK
-40°C ~ 150°C
STTH15RQ06W
STMicroelectronics

DIODE GEN PURP 600V 15A DO247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 2.95 V @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 20 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-247-2 (Straight Leads)
  • Supplier Device Package: DO-247
  • Operating Temperature - Junction: 175°C (Max)
패키지: -
Request a Quote
600 V
15A
2.95 V @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
20 µA @ 600 V
-
Through Hole
DO-247-2 (Straight Leads)
DO-247
175°C (Max)
STTH15RQ06D
STMicroelectronics

DIODE GEN PURP 600V 15A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 2.95 V @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 20 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: 175°C (Max)
패키지: -
재고5,850
600 V
15A
2.95 V @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
20 µA @ 600 V
-
Through Hole
TO-220-2
TO-220AC
175°C (Max)
STTH2R02AY
STMicroelectronics

DIODE GEN PURP 200V 2A SMA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.04 V @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30 ns
  • Current - Reverse Leakage @ Vr: 2.5 µA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA (DO-214AC)
  • Operating Temperature - Junction: 175°C
패키지: -
재고44,286
200 V
2A
1.04 V @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
30 ns
2.5 µA @ 200 V
-
Surface Mount
DO-214AC, SMA
SMA (DO-214AC)
175°C
STTH10LCD06SB-TR
STMicroelectronics

DIODE GEN PURP 600V 10A DPAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 2 V @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK
  • Operating Temperature - Junction: 175°C (Max)
패키지: -
Request a Quote
600 V
10A
2 V @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
5 µA @ 600 V
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
DPAK
175°C (Max)
STTH25M06B-TR
STMicroelectronics

DIODE GP 600V 25A TO220FPAC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 25 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 60 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: TO-220FPAC
  • Operating Temperature - Junction: 175°C (Max)
패키지: -
재고49,983
600 V
25A
3.4 V @ 25 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
60 µA @ 600 V
-
Through Hole
TO-220-2 Full Pack
TO-220FPAC
175°C (Max)
STTH15RQ06G2-TR
STMicroelectronics

DIODE GEN PURP 600V 15A D2PAK HV

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 2.95 V @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 20 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK HV
  • Operating Temperature - Junction: 175°C (Max)
패키지: -
재고2,940
600 V
15A
2.95 V @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
20 µA @ 600 V
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
D2PAK HV
175°C (Max)
STPST1H100AFY
STMicroelectronics

AUTOMOTIVE 100 V, 1 A POWER SCHO

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 725 mV @ 1 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1.7 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: SOD128Flat
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
재고35,319
100 V
1A
725 mV @ 1 A
No Recovery Time > 500mA (Io)
-
1.7 µA @ 100 V
-
Surface Mount
SOD-128
SOD128Flat
-40°C ~ 175°C
STPS160AFN
STMicroelectronics

DIODE SCHOTTKY 60V 1A SMAFLAT

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 670 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 4 µA @ 60 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AC, SMA Flat Leads
  • Supplier Device Package: SMAflat Notch
  • Operating Temperature - Junction: 150°C
패키지: -
재고19,461
60 V
1A
670 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
4 µA @ 60 V
-
Surface Mount
DO-221AC, SMA Flat Leads
SMAflat Notch
150°C
STPSC20H12G2-TR
STMicroelectronics

DIODE SIL CARB 1.2KV 20A D2PAK

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 120 µA @ 1200 V
  • Capacitance @ Vr, F: 1650pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK HV
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
재고3,000
1200 V
20A
1.5 V @ 20 A
No Recovery Time > 500mA (Io)
0 ns
120 µA @ 1200 V
1650pF @ 0V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
D2PAK HV
-40°C ~ 175°C
STPS10200SF
STMicroelectronics

DIODE SCHOTTKY 200V 10A TO277A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 895 mV @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 6 µA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: 175°C
패키지: -
재고10,305
200 V
10A
895 mV @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
-
6 µA @ 200 V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
175°C
STPS1L60AFN
STMicroelectronics

DIODE SCHOTTKY 60V 1A SMAFLAT

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 570 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 60 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AC, SMA Flat Leads
  • Supplier Device Package: SMAflat Notch
  • Operating Temperature - Junction: 175°C
패키지: -
Request a Quote
60 V
1A
570 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
50 µA @ 60 V
-
Surface Mount
DO-221AC, SMA Flat Leads
SMAflat Notch
175°C
STPST10H100SFY
STMicroelectronics

AUTOMOTIVE 100 V, 10 A POWER SCH

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 700 mV @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 26 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
재고18,000
100 V
10A
700 mV @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
-
26 µA @ 100 V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-40°C ~ 175°C
STPST1H100ZFY
STMicroelectronics

AUTOMOTIVE 100 V, 1 A POWER SCHO

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 725 mV @ 1 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1.7 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: SOD-123F
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
재고16,317
100 V
1A
725 mV @ 1 A
No Recovery Time > 500mA (Io)
-
1.7 µA @ 100 V
-
Surface Mount
SOD-123F
SOD-123F
-40°C ~ 175°C
STTH2004FP
STMicroelectronics

RECTIFIER

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
STTH2004SW
STMicroelectronics

RECTIFIER

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
STPST15H100SB-TR
STMicroelectronics

100 V, 15 A, DPAK POWER SCHOTTKY

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 740 mV @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 28 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252 (DPAK)
  • Operating Temperature - Junction: 175°C
패키지: -
재고6,660
100 V
15A
740 mV @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
-
28 µA @ 100 V
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252 (DPAK)
175°C
STPST2H100ZFY
STMicroelectronics

AUTOMOTIVE 100 V, 2 A POWER SCHO

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 805 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2.7 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: SOD-123F
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
재고26,598
100 V
2A
805 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
2.7 µA @ 100 V
-
Surface Mount
SOD-123F
SOD-123F
-40°C ~ 175°C
STPSC20G12WL
STMicroelectronics

1200 V, 20 A HIGH SURGE SILICON

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150 µA @ 1200 V
  • Capacitance @ Vr, F: 1548pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: DO-247 LL
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
재고516
1200 V
20A
1.5 V @ 20 A
Fast Recovery =< 500ns, > 200mA (Io)
-
150 µA @ 1200 V
1548pF @ 0V, 1MHz
Through Hole
TO-247-2
DO-247 LL
-55°C ~ 175°C
STTH30RQ06G-TR
STMicroelectronics

DIODE GEN PURP 600V 30A D2PAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 2.95 V @ 30 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 55 ns
  • Current - Reverse Leakage @ Vr: 40 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: 175°C (Max)
패키지: -
재고6,915
600 V
30A
2.95 V @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
55 ns
40 µA @ 600 V
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
D2PAK
175°C (Max)
STTH30RQ06L2-TR
STMicroelectronics

DIODE GEN PURP 600V 30A HU3PAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 2.95 V @ 30 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 55 ns
  • Current - Reverse Leakage @ Vr: 40 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
  • Supplier Device Package: HU3PAK
  • Operating Temperature - Junction: 175°C
패키지: -
재고1,800
600 V
30A
2.95 V @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
55 ns
40 µA @ 600 V
-
Surface Mount
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
HU3PAK
175°C
STPST2H100AFY
STMicroelectronics

AUTOMOTIVE 100 V, 2 A POWER SCHO

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 805 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2.7 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: SOD128Flat
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
재고33,750
100 V
2A
805 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
2.7 µA @ 100 V
-
Surface Mount
SOD-128
SOD128Flat
-40°C ~ 175°C
STPSC10065DLF
STMicroelectronics

DIODE SIL CARB 650V 10A PWRFLAT

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 130 µA @ 650 V
  • Capacitance @ Vr, F: 670pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerFlat™ (8x8) HV
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
재고858
650 V
10A
1.45 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
130 µA @ 650 V
670pF @ 0V, 1MHz
Surface Mount
8-PowerVDFN
PowerFlat™ (8x8) HV
-40°C ~ 175°C