페이지 4 - STMicroelectronics 제품 - 다이오드 - 정류기 - 단일 | Heisener Electronics
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STMicroelectronics 제품 - 다이오드 - 정류기 - 단일

기록 937
페이지  4/34
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
STPS5L60SFY
STMicroelectronics

DIODE SCHOTTKY 60V 5A TO277A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 470 µA @ 60 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: -
재고234,258
60 V
5A
-
Fast Recovery =< 500ns, > 200mA (Io)
-
470 µA @ 60 V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-40°C ~ 150°C
STPS5L60UFN
STMicroelectronics

DIODE SCHOTTKY 60V 5A SMBFLAT

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 220 µA @ 60 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AA, SMB Flat Leads
  • Supplier Device Package: SMBflat Notch
  • Operating Temperature - Junction: 150°C
패키지: -
Request a Quote
60 V
5A
520 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
220 µA @ 60 V
-
Surface Mount
DO-221AA, SMB Flat Leads
SMBflat Notch
150°C
STPSC10065DY
STMicroelectronics

DIODE SIL CARB 650V 10A TO220AC

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 130 µA @ 650 V
  • Capacitance @ Vr, F: 670pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
재고3,417
650 V
10A
1.45 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
130 µA @ 650 V
670pF @ 0V, 1MHz
Through Hole
TO-220-2
TO-220AC
-40°C ~ 175°C
STPSC10C065RY
STMicroelectronics

DIODE SIL CARBIDE 650V 10A I2PAK

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 100 µA @ 650 V
  • Capacitance @ Vr, F: 480pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
  • Supplier Device Package: I2PAK
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
재고2,916
650 V
10A
-
No Recovery Time > 500mA (Io)
0 ns
100 µA @ 650 V
480pF @ 0V, 1MHz
Through Hole
TO-262-3 Long Leads, I2PAK, TO-262AA
I2PAK
-40°C ~ 175°C
STPST3H100UF
STMicroelectronics

100 V, 3 A POWER SCHOTTKY TRENCH

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 755 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5.7 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMB, Flat Lead
  • Supplier Device Package: SMBflat-3L
  • Operating Temperature - Junction: 175°C
패키지: -
재고28,251
100 V
3A
755 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
5.7 µA @ 100 V
-
Surface Mount
3-SMB, Flat Lead
SMBflat-3L
175°C
STPS10H60SF
STMicroelectronics

DIODE SCHOTTKY 60V 10A TO277A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 790 mV @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 µA @ 60 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
재고11,910
60 V
10A
790 mV @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
-
20 µA @ 60 V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-40°C ~ 175°C
STBR3012G2Y-TR
STMicroelectronics

DIODE GP 1.2KV 30A D2PAK HV

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK HV
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
재고3,225
1200 V
30A
1.3 V @ 30 A
Standard Recovery >500ns, > 200mA (Io)
-
2 µA @ 1200 V
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
D2PAK HV
-40°C ~ 175°C
STPST3H100AF
STMicroelectronics

100 V, 3 A POWER SCHOTTKY TRENCH

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 755 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5.7 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: SOD128Flat
  • Operating Temperature - Junction: 175°C
패키지: -
재고18,000
100 V
3A
755 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
5.7 µA @ 100 V
-
Surface Mount
SOD-128
SOD128Flat
175°C
STTH30RQ06G2-TR
STMicroelectronics

DIODE GEN PURP 600V 30A D2PAK HV

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 2.95 V @ 30 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 55 ns
  • Current - Reverse Leakage @ Vr: 40 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK HV
  • Operating Temperature - Junction: 175°C (Max)
패키지: -
재고3,000
600 V
30A
2.95 V @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
55 ns
40 µA @ 600 V
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
D2PAK HV
175°C (Max)
STPSC20G12WLY
STMicroelectronics

AUTOMOTIVE 1200 V, 20A POWER SCH

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150 µA @ 1.2 kV
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: DO-247 LL
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
재고600
1200 V
20A
1.5 V @ 20 A
Fast Recovery =< 500ns, > 200mA (Io)
-
150 µA @ 1.2 kV
-
Through Hole
TO-247-2
DO-247 LL
-55°C ~ 175°C
STPSC4H065DLF
STMicroelectronics

DIODE SIL CARB 650V 4A POWERFLAT

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 4 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 40 µA @ 650 V
  • Capacitance @ Vr, F: 245pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerFlat™ (8x8) HV
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
Request a Quote
650 V
4A
1.55 V @ 4 A
No Recovery Time > 500mA (Io)
0 ns
40 µA @ 650 V
245pF @ 0V, 1MHz
Surface Mount
8-PowerVDFN
PowerFlat™ (8x8) HV
-40°C ~ 175°C
STPSC15H12G2Y-TR
STMicroelectronics

DIODE SIL CARB 1.2KV 15A D2PAK

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 90 µA @ 1200 V
  • Capacitance @ Vr, F: 1200pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK HV
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
재고2,970
1200 V
15A
1.5 V @ 15 A
No Recovery Time > 500mA (Io)
0 ns
90 µA @ 1200 V
1200pF @ 0V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
D2PAK HV
-40°C ~ 175°C
STPS1170AFN
STMicroelectronics

DIODE SCHOTTKY 170V 1A SMAFLAT

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 170 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 820 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1.5 µA @ 170 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AC, SMA Flat Leads
  • Supplier Device Package: SMAflat
  • Operating Temperature - Junction: 175°C (Max)
패키지: -
Request a Quote
170 V
1A
820 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
1.5 µA @ 170 V
-
Surface Mount
DO-221AC, SMA Flat Leads
SMAflat
175°C (Max)
STPSC30G12WLY
STMicroelectronics

AUTOMOTIVE 1200 V, 30 A SILICON

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 225 µA @ 1200 V
  • Capacitance @ Vr, F: 2272pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: DO-247 LL
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
재고540
1200 V
30A
1.5 V @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
-
225 µA @ 1200 V
2272pF @ 0V, 1MHz
Through Hole
TO-247-2
DO-247 LL
-55°C ~ 175°C
STPSC40G12WLY
STMicroelectronics

AUTOMOTIVE 1200 V, 40A POWER SCH

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
패키지: -
재고600
-
-
-
-
-
-
-
-
-
-
-
STPSC6H065DLF
STMicroelectronics

DIODE SIL CARB 650V 6A POWERFLAT

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 6 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 60 µA @ 650 V
  • Capacitance @ Vr, F: 350pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerFlat™ (8x8) HV
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
재고23,433
650 V
6A
1.55 V @ 6 A
No Recovery Time > 500mA (Io)
0 ns
60 µA @ 650 V
350pF @ 0V, 1MHz
Surface Mount
8-PowerVDFN
PowerFlat™ (8x8) HV
-40°C ~ 175°C
STPST5H100SB-TR
STMicroelectronics

100 V, 5 A, DPAK POWER SCHOTTKY

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 685 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 11.5 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252 (DPAK)
  • Operating Temperature - Junction: 175°C
패키지: -
재고30,000
100 V
5A
685 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
11.5 µA @ 100 V
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252 (DPAK)
175°C
STPS2L30AFN
STMicroelectronics

DIODE SCHOTTKY 30V 2A SMAFLAT

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 450 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 µA @ 30 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AC, SMA Flat Leads
  • Supplier Device Package: SMAflat Notch
  • Operating Temperature - Junction: 150°C
패키지: -
재고21,684
30 V
2A
450 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
200 µA @ 30 V
-
Surface Mount
DO-221AC, SMA Flat Leads
SMAflat Notch
150°C
STPSC8065DY
STMicroelectronics

DIODE SIL CARB 650V 8A TO220AC

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 8 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 105 µA @ 650 V
  • Capacitance @ Vr, F: 540pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
재고129
650 V
8A
1.45 V @ 8 A
No Recovery Time > 500mA (Io)
0 ns
105 µA @ 650 V
540pF @ 0V, 1MHz
Through Hole
TO-220-2
TO-220AC
-40°C ~ 175°C
STPSC6H065BY-TR
STMicroelectronics

DIODE SIL CARBIDE 650V 6A DPAK

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 60 µA @ 650 V
  • Capacitance @ Vr, F: 300pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
재고22,473
650 V
6A
-
No Recovery Time > 500mA (Io)
0 ns
60 µA @ 650 V
300pF @ 0V, 1MHz
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
DPAK
-40°C ~ 175°C
STPSC8H065G2Y-TR
STMicroelectronics

DIODE SIL CARB 650V 8A D2PAK HV

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 8 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 80 µA @ 650 V
  • Capacitance @ Vr, F: 414pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK HV
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
Request a Quote
650 V
8A
1.65 V @ 8 A
No Recovery Time > 500mA (Io)
0 ns
80 µA @ 650 V
414pF @ 0V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
D2PAK HV
-40°C ~ 175°C
FERD40H100SFP
STMicroelectronics

DIODE FERD 100V 40A TO220FPAB

  • Diode Type: FERD (Field Effect Rectifier Diode)
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 40A
  • Voltage - Forward (Vf) (Max) @ If: 675 mV @ 20 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 190 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220FPAB
  • Operating Temperature - Junction: 175°C (Max)
패키지: -
재고9,270
100 V
40A
675 mV @ 20 A
Standard Recovery >500ns, > 200mA (Io)
-
190 µA @ 100 V
-
Through Hole
TO-220-3 Full Pack
TO-220FPAB
175°C (Max)
STBR6008WY
STMicroelectronics

DIODE GEN PURP 800V 60A DO247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 60 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-247-2 (Straight Leads)
  • Supplier Device Package: DO-247
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
재고1,833
800 V
60A
1.1 V @ 60 A
Standard Recovery >500ns, > 200mA (Io)
-
5 µA @ 800 V
-
Through Hole
DO-247-2 (Straight Leads)
DO-247
-40°C ~ 175°C
STBR3008G2Y-TR
STMicroelectronics

DIODE GEN PURP 800V 30A D2PAK HV

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 30 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2 µA @ 800 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK HV
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
재고2,844
800 V
30A
1.1 V @ 30 A
Standard Recovery >500ns, > 200mA (Io)
-
2 µA @ 800 V
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
D2PAK HV
-40°C ~ 175°C
STBR3008WY
STMicroelectronics

DIODE GEN PURP 800V 30A DO247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 30 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2 µA @ 800 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-247-2 (Straight Leads)
  • Supplier Device Package: DO-247
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
재고1,356
800 V
30A
1.1 V @ 30 A
Standard Recovery >500ns, > 200mA (Io)
-
2 µA @ 800 V
-
Through Hole
DO-247-2 (Straight Leads)
DO-247
-40°C ~ 175°C
STPS20LCD200CBTR
STMicroelectronics

DIODE SCHOTTKY 200V 10A DPAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK
  • Operating Temperature - Junction: 175°C (Max)
패키지: -
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200 V
10A
950 mV @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
-
5 µA @ 200 V
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
DPAK
175°C (Max)
STPS640CSFY
STMicroelectronics

DIODE SCHOTTKY 40V 3A TO277A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 75 µA @ 40 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: -
재고13,944
40 V
3A
490 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
75 µA @ 40 V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-40°C ~ 150°C
STPS1150AFN
STMicroelectronics

DIODE SCHOTTKY 150V 1A SMAFLAT

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 820 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 µA @ 150 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AC, SMA Flat Leads
  • Supplier Device Package: SMAflat
  • Operating Temperature - Junction: 175°C (Max)
패키지: -
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150 V
1A
820 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
1 µA @ 150 V
-
Surface Mount
DO-221AC, SMA Flat Leads
SMAflat
175°C (Max)