페이지 39 - Taiwan Semiconductor Corporation 제품

부품 번호	제조업체	설명	패키지	재고
BZD27C91P R3G	Taiwan Semiconductor Corporation	DIODE, ZENER, 91V, 1000MW, %, SU Voltage - Zener (Nom) (Vz): 90.5V Tolerance: ±6.07% Power - Max: 1W Impedance (Max) (Zzt): 200 Ohms Current - Reverse Leakage @ Vr: 1µA @ 68V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	패키지: DO-219AB	재고4,400
BZD27C91PW RVG	Taiwan Semiconductor Corporation	DIODE, ZENER, 91V, 1000MW, %, SO Voltage - Zener (Nom) (Vz): 91V Tolerance: ±5% Power - Max: 1W Impedance (Max) (Zzt): 200 Ohms Current - Reverse Leakage @ Vr: 1µA @ 68V Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD123W	패키지: SOD-123W	재고2,144
BZD27C100P RTG	Taiwan Semiconductor Corporation	DIODE, ZENER, 100V, 1000MW, %, S Voltage - Zener (Nom) (Vz): 100V Tolerance: ±6% Power - Max: 1W Impedance (Max) (Zzt): 200 Ohms Current - Reverse Leakage @ Vr: 1µA @ 75V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	패키지: DO-219AB	재고3,152
BZD27C8V2P MHG	Taiwan Semiconductor Corporation	DIODE, ZENER, 8.2V, 1000MW, %, S Voltage - Zener (Nom) (Vz): 8.2V Tolerance: ±6.09% Power - Max: 1W Impedance (Max) (Zzt): 2 Ohms Current - Reverse Leakage @ Vr: 10µA @ 3V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	패키지: DO-219AB	재고2,704
BZD17C51P RUG	Taiwan Semiconductor Corporation	DIODE, ZENER, 51V, 800MW, %, SUB Voltage - Zener (Nom) (Vz): 51V Tolerance: ±5.88% Power - Max: 800mW Impedance (Max) (Zzt): 60 Ohms Current - Reverse Leakage @ Vr: 1µA @ 39V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	패키지: DO-219AB	재고5,232
1N4752G R0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 33V, 1000MW, 5%, D Voltage - Zener (Nom) (Vz): 33V Tolerance: ±5% Power - Max: 1W Impedance (Max) (Zzt): 45 Ohms Current - Reverse Leakage @ Vr: 5µA @ 25.1V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -65°C ~ 200°C (TA) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41)	패키지: DO-204AL, DO-41, Axial	재고6,880
TSZL52C2V7 RWG	Taiwan Semiconductor Corporation	DIODE, ZENER, 2.7V, 200MW, 5%, 1 Voltage - Zener (Nom) (Vz): 2.7V Tolerance: ±5% Power - Max: 200mW Impedance (Max) (Zzt): 83 Ohms Current - Reverse Leakage @ Vr: 75µA @ 1V Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA Operating Temperature: -55°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 1005 (2512 Metric) Supplier Device Package: 1005	패키지: 1005 (2512 Metric)	재고2,096
BZT52B10-G RHG	Taiwan Semiconductor Corporation	DIODE, ZENER, 10V, 410MW, 2%, SO Voltage - Zener (Nom) (Vz): 10V Tolerance: ±2% Power - Max: 410mW Impedance (Max) (Zzt): 20 Ohms Current - Reverse Leakage @ Vr: 200nA @ 7V Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123	패키지: SOD-123	재고5,024
BZV55C43 L0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 43V, 500MW, 5%, MM Voltage - Zener (Nom) (Vz): 43V Tolerance: ±5% Power - Max: 500mW Impedance (Max) (Zzt): 90 Ohms Current - Reverse Leakage @ Vr: 100nA @ 32V Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: Mini MELF	패키지: DO-213AC, MINI-MELF, SOD-80	재고2,688
TSS4B04G C2G	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, HIGH EFFICIENT Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 400V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 4A Current - Reverse Leakage @ Vr: 5µA @ 400V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, TS-4B Supplier Device Package: TS4B	패키지: 4-SIP, TS-4B	재고7,504
TS79L05CY RMG	Taiwan Semiconductor Corporation	IC REG LINEAR -5V 100MA Output Configuration: - Output Type: - Number of Regulators: 1 Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 100mA Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: 0°C ~ 125°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,840
TS78L12CS	Taiwan Semiconductor Corporation	3-TERMINAL 100MA FIXED 12V VOLTA Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 35V Voltage - Output (Min/Fixed): 12V Voltage - Output (Max): - Voltage Dropout (Max): 1.7V @ 100mA Current - Output: 100mA Current - Quiescent (Iq): 6.5 mA Current - Supply (Max): - PSRR: 42dB (120Hz) Control Features: Current Limit Protection Features: Over Current, Over Temperature Operating Temperature: 0°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	패키지: -	Request a Quote
SRA20150	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 20A TO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 150 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote
ES1JLH	Taiwan Semiconductor Corporation	35NS, 1A, 600V, SUPER FAST RECOV Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote
SS35-V7G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 3A 50V DO-214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 50 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고4,959
BZT52B39S-R9G	Taiwan Semiconductor Corporation	SOD-323F, 200MW, 2%, SMALL SIGNA Voltage - Zener (Nom) (Vz): 39 V Tolerance: ±2% Power - Max: 200 mW Impedance (Max) (Zzt): 130 Ohms Current - Reverse Leakage @ Vr: 45 nA @ 27.3 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SOD-323F	패키지: -	재고30,000
BZD27C82PW	Taiwan Semiconductor Corporation	DIODE ZENER 82V 1W SOD123W Voltage - Zener (Nom) (Vz): 82 V Tolerance: ±5% Power - Max: 1 W Impedance (Max) (Zzt): 200 Ohms Current - Reverse Leakage @ Vr: 1 µA @ 62 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W	패키지: -	Request a Quote
1SMA5926H	Taiwan Semiconductor Corporation	DIODE ZENER 11V 1.5W DO214AC Voltage - Zener (Nom) (Vz): 11 V Tolerance: ±5% Power - Max: 1.5 W Impedance (Max) (Zzt): 5.5 Ohms Current - Reverse Leakage @ Vr: 500 nA @ 8.4 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA)	패키지: -	Request a Quote
S15JLWH	Taiwan Semiconductor Corporation	1.5A, 600V, STANDARD RECOVERY RE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 600 V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	재고60,000
MBRF20H200CTH	Taiwan Semiconductor Corporation	DIODE ARR SCHOTT 200V ITO220AB Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io) (per Diode): 20A Voltage - Forward (Vf) (Max) @ If: 970 mV @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 200 V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Supplier Device Package: ITO-220AB	패키지: -	Request a Quote
ES2JA	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 2A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고42,000
RS1DLWH	Taiwan Semiconductor Corporation	150NS, 1A, 200V, FAST RECOVERY R Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	재고59,964
SF63GH	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 6A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 975 mV @ 6 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 150 V Capacitance @ Vr, F: 100pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote
SS36L	Taiwan Semiconductor Corporation	3A, 60V, SCHOTTKY RECTIFIER Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 500 µA @ 60 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote
HS1MF-T	Taiwan Semiconductor Corporation	75NS, 1A, 1000V, HIGH EFFICIENT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: SMAF Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고22,500
KBU406G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 800V 4A KBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 4 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, KBU Supplier Device Package: KBU	패키지: -	재고1,467
HER304G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 10 µA @ 300 V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고7,470
1PGSMA120Z	Taiwan Semiconductor Corporation	DIODE ZENER 120V 1.25W DO214AC Voltage - Zener (Nom) (Vz): 120 V Tolerance: ±5% Power - Max: 1.25 W Impedance (Max) (Zzt): 550 Ohms Current - Reverse Leakage @ Vr: 1 µA @ 91.2 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA)	패키지: -	Request a Quote