페이지 42 - Taiwan Semiconductor Corporation 제품

부품 번호	제조업체	설명	패키지	재고
BZD27C27PHRUG	Taiwan Semiconductor Corporation	DIODE, ZENER, 27V, 1000MW, %, AE Voltage - Zener (Nom) (Vz): 27V Tolerance: ±7.03% Power - Max: 1W Impedance (Max) (Zzt): 15 Ohms Current - Reverse Leakage @ Vr: 1µA @ 20V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	패키지: DO-219AB	재고2,608
BZD27C180P RVG	Taiwan Semiconductor Corporation	DIODE, ZENER, 180V, 1000MW, %, S Voltage - Zener (Nom) (Vz): 179.5V Tolerance: ±6.4% Power - Max: 1W Impedance (Max) (Zzt): 450 Ohms Current - Reverse Leakage @ Vr: 1µA @ 130V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	패키지: DO-219AB	재고3,168
1SMB5952 M4G	Taiwan Semiconductor Corporation	DIODE, ZENER, 130V, 3000MW, 5%, Voltage - Zener (Nom) (Vz): 130V Tolerance: ±5% Power - Max: 3W Impedance (Max) (Zzt): 450 Ohms Current - Reverse Leakage @ Vr: 1µA @ 98.8V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB)	패키지: DO-214AA, SMB	재고6,240
1SMA5929HM2G	Taiwan Semiconductor Corporation	DIODE, ZENER, 15V, 1500MW, 5%, A Voltage - Zener (Nom) (Vz): 15V Tolerance: ±5% Power - Max: 1.5W Impedance (Max) (Zzt): 9 Ohms Current - Reverse Leakage @ Vr: 500nA @ 11.4V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA)	패키지: DO-214AC, SMA	재고5,968
TSZL52C2V4 RWG	Taiwan Semiconductor Corporation	DIODE, ZENER, 2.4V, 200MW, 5%, 1 Voltage - Zener (Nom) (Vz): 2.4V Tolerance: ±5% Power - Max: 200mW Impedance (Max) (Zzt): 85 Ohms Current - Reverse Leakage @ Vr: 100µA @ 1V Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA Operating Temperature: -55°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 1005 (2512 Metric) Supplier Device Package: 1005	패키지: 1005 (2512 Metric)	재고6,240
MMSZ5252B RHG	Taiwan Semiconductor Corporation	DIODE, ZENER, 24V, 500MW, 5%, SO Voltage - Zener (Nom) (Vz): 24V Tolerance: ±5% Power - Max: 500mW Impedance (Max) (Zzt): 33 Ohms Current - Reverse Leakage @ Vr: 100nA @ 18V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F	패키지: SOD-123F	재고6,864
BZX585B4V7 RSG	Taiwan Semiconductor Corporation	DIODE, ZENER, 4.7V, 200MW, 2%, S Voltage - Zener (Nom) (Vz): 4.7V Tolerance: ±2% Power - Max: 200mW Impedance (Max) (Zzt): 80 Ohms Current - Reverse Leakage @ Vr: 2.7µA @ 2V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SOD-523F	패키지: SC-79, SOD-523	재고4,832
BZX585B47 RSG	Taiwan Semiconductor Corporation	DIODE, ZENER, 47V, 200MW, 2%, SO Voltage - Zener (Nom) (Vz): 47V Tolerance: ±2% Power - Max: 200mW Impedance (Max) (Zzt): 170 Ohms Current - Reverse Leakage @ Vr: 45nA @ 33V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SOD-523F	패키지: SC-79, SOD-523	재고3,424
BZX85C18 R0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 18V, 1300MW, 5%, D Voltage - Zener (Nom) (Vz): 18V Tolerance: ±5% Power - Max: 1.3W Impedance (Max) (Zzt): 20 Ohms Current - Reverse Leakage @ Vr: 500nA @ 13V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41)	패키지: DO-204AL, DO-41, Axial	재고7,456
BZT55B8V2 L0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 8.2V, 500MW, 2%, Q Voltage - Zener (Nom) (Vz): 8.2V Tolerance: ±2% Power - Max: 500mW Impedance (Max) (Zzt): 7 Ohms Current - Reverse Leakage @ Vr: 100nA @ 6.2V Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-80 Variant Supplier Device Package: Mini MELF	패키지: SOD-80 Variant	재고5,472
BZT52B12 RHG	Taiwan Semiconductor Corporation	DIODE, ZENER, 12V, 500MW, 2%, SO Voltage - Zener (Nom) (Vz): 12V Tolerance: ±2% Power - Max: 500mW Impedance (Max) (Zzt): 25 Ohms Current - Reverse Leakage @ Vr: 90nA @ 8V Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F	패키지: SOD-123F	재고5,936
TS9011PCY RMG	Taiwan Semiconductor Corporation	IC REG LINEAR 3V 250MA Output Configuration: - Output Type: - Number of Regulators: 1 Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 250mA Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,784
1SMB5945H	Taiwan Semiconductor Corporation	DIODE ZENER 68V 3W DO214AA Voltage - Zener (Nom) (Vz): 68 V Tolerance: ±5% Power - Max: 3 W Impedance (Max) (Zzt): 120 Ohms Current - Reverse Leakage @ Vr: 1 µA @ 51.7 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB)	패키지: -	Request a Quote
TSM05N03CW	Taiwan Semiconductor Corporation	30V, 5A, SINGLE N-CHANNEL POWER FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	패키지: -	Request a Quote
SRA860	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 8A TO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 700 mV @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 60 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote
RB495D	Taiwan Semiconductor Corporation	DIODE ARR SCHOTT 25V 350MA SOT23 Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 25 V Current - Average Rectified (Io) (per Diode): 350mA Voltage - Forward (Vf) (Max) @ If: 550 mV @ 200 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 70 µA @ 25 V Operating Temperature - Junction: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: -	Request a Quote
ES2DAL	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 2A THIN SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 1 µA @ 200 V Capacitance @ Vr, F: 18pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고19,002
ESH1GMHRSG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A MICRO SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 1 µA @ 400 V Capacitance @ Vr, F: 3pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: Micro SMA Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote
GP1607H	Taiwan Semiconductor Corporation	DIODE ARRAY GP 16A TO220AB Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io) (per Diode): 16A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	패키지: -	재고3,000
BC858B	Taiwan Semiconductor Corporation	SOT-23, -30V, -0.1A, PNP BIPOLAR Transistor Type: PNP Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Power - Max: 200 mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: -	Request a Quote
ES5G-T-M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 5A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: 123pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote
BZT52C2V7-G	Taiwan Semiconductor Corporation	SOD-123, 350MW, 5%, SMALL SIGNAL Voltage - Zener (Nom) (Vz): 2.7 V Tolerance: ±5% Power - Max: 350 mW Impedance (Max) (Zzt): 100 Ohms Current - Reverse Leakage @ Vr: 20 µA @ 1 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123	패키지: -	Request a Quote
1SMA5951	Taiwan Semiconductor Corporation	DIODE ZENER 120V 1.5W DO214AC Voltage - Zener (Nom) (Vz): 120 V Tolerance: ±5% Power - Max: 1.5 W Impedance (Max) (Zzt): 360 Ohms Current - Reverse Leakage @ Vr: 500 nA @ 91.2 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA)	패키지: -	Request a Quote
TS78L05ACY	Taiwan Semiconductor Corporation	3-TERMINAL 100MA FIXED 5V VOLTAG Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 35V Voltage - Output (Min/Fixed): 5V Voltage - Output (Max): - Voltage Dropout (Max): 1.7V @ 100mA Current - Output: 100mA Current - Quiescent (Iq): 6 mA Current - Supply (Max): - PSRR: 49dB (120Hz) Control Features: Current Limit Protection Features: Over Current, Over Temperature Operating Temperature: 0°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	패키지: -	Request a Quote
SSL23	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 2A DO214AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 410 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400 µA @ 30 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 125°C	패키지: -	Request a Quote
BZT52B3V0S	Taiwan Semiconductor Corporation	SOD-323F, 200MW, 2%, SMALL SIGNA Voltage - Zener (Nom) (Vz): 3 V Tolerance: ±2% Power - Max: 200 mW Impedance (Max) (Zzt): 100 Ohms Current - Reverse Leakage @ Vr: 9 µA @ 1 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SOD-323F	패키지: -	Request a Quote
SS1H4LW	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 1A SOD123W Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 650 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 nA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	재고266,166
TSM6502CR	Taiwan Semiconductor Corporation	MOSFET N/P-CH 60V 24A/18A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 24A (Tc), 18A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V, 68mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 4.5V, 9.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1159pF @ 30V, 930pF @ 30V Power - Max: 40W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-PDFN (5x6)	패키지: -	Request a Quote