페이지 131 - Toshiba Semiconductor and Storage 제품 | Heisener Electronics
고객 문의
SalesDept@heisener.com +86-755-83210559-827
Language Translation

* Please refer to the English Version as our Official Version.

Toshiba Semiconductor and Storage 제품

기록 4,549
페이지  131/163
이미지
부품 번호
제조업체
설명
패키지
재고
수량
2SA1721OTE85LF
Toshiba Semiconductor and Storage

TRANS PNP 300V 100MA TO236-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V
  • Power - Max: 150mW
  • Frequency - Transition: 50MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
패키지: TO-236-3, SC-59, SOT-23-3
재고27,204
RN1962TE85LF
Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.5W US6

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 250MHz
  • Power - Max: 500mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
패키지: 6-TSSOP, SC-88, SOT-363
재고3,184
RN2904FE,LF
Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.1W ES6

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
패키지: SOT-563, SOT-666
재고97,644
TA58L05S(SUMIS,AQ)
Toshiba Semiconductor and Storage

IC REG LINEAR 250MA 3HSIP

  • Output Configuration: -
  • Output Type: -
  • Number of Regulators: 1
  • Voltage - Input (Max): -
  • Voltage - Output (Min/Fixed): -
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: 250mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: -
  • Protection Features: -
  • Operating Temperature: -40°C ~ 105°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: 3-HSIP
패키지: TO-220-3 Full Pack
재고5,520
TBD62503AFG,EL
Toshiba Semiconductor and Storage

IC LOAD SWITCH 7CH 0.3A 16SOP

  • Switch Type: General Purpose
  • Number of Outputs: 7
  • Ratio - Input:Output: 1:1
  • Output Configuration: Low Side
  • Output Type: N-Channel
  • Interface: On/Off
  • Voltage - Load: 50V (Max)
  • Voltage - Supply (Vcc/Vdd): Not Required
  • Current - Output (Max): 1.75A
  • Rds On (Typ): -
  • Input Type: Inverting
  • Features: -
  • Fault Protection: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 16-SOIC (0.173", 4.40mm Width)
  • Supplier Device Package: 16-SOP
패키지: 16-SOIC (0.173", 4.40mm Width)
재고17,514
TC58NVG0S3HBAI6
Toshiba Semiconductor and Storage

IC EEPROM 1GBIT 25NS 67FBGA

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM - NAND
  • Memory Size: 1Gb (128M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 25ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 67-VFBGA
  • Supplier Device Package: 67-VFBGA (6.5x8)
패키지: 67-VFBGA
재고6,304
TC74LCX573FTEL
Toshiba Semiconductor and Storage

IC LATCH OCTAL D-TYPE 20-TSSOP

  • Logic Type: D-Type Transparent Latch
  • Circuit: 8:8
  • Output Type: Tri-State
  • Voltage - Supply: 1.65 V ~ 3.6 V
  • Independent Circuits: 1
  • Delay Time - Propagation: 1.5ns
  • Current - Output High, Low: 24mA, 24mA
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 20-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 20-TSSOP
패키지: 20-TSSOP (0.173", 4.40mm Width)
재고4,144
TC7SET125F(TE85L,F
Toshiba Semiconductor and Storage

IC BUFF NON-INVERT 5.5V SMV

  • Logic Type: Buffer, Non-Inverting
  • Number of Elements: 1
  • Number of Bits per Element: 1
  • Input Type: -
  • Output Type: Push-Pull
  • Current - Output High, Low: 8mA, 8mA
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: SMV
패키지: SC-74A, SOT-753
재고5,408
TC74ACT541PF
Toshiba Semiconductor and Storage

IC BUFF/DVR TRI-ST 8BIT 20DIP

  • Logic Type: Buffer, Non-Inverting
  • Number of Elements: 1
  • Number of Bits per Element: 8
  • Input Type: -
  • Output Type: Push-Pull
  • Current - Output High, Low: 24mA, 24mA
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 20-DIP (0.300", 7.62mm)
  • Supplier Device Package: 20-DIP
패키지: 20-DIP (0.300", 7.62mm)
재고21,744
TC7SH125FU,LJ(CT
Toshiba Semiconductor and Storage

IC BUS BUFF DVR TRI-ST USV

  • Logic Type: Buffer, Non-Inverting
  • Number of Elements: 1
  • Number of Bits per Element: 1
  • Input Type: -
  • Output Type: Push-Pull
  • Current - Output High, Low: 8mA, 8mA
  • Voltage - Supply: 2 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 5-TSSOP, SC-70-5, SOT-353
  • Supplier Device Package: USV
패키지: 5-TSSOP, SC-70-5, SOT-353
재고7,792
TC74VHC541FK(EL,K)
Toshiba Semiconductor and Storage

IC BUFF/DVR TRI-ST 8BIT 20VSSOP

  • Logic Type: Buffer, Non-Inverting
  • Number of Elements: 1
  • Number of Bits per Element: 8
  • Input Type: -
  • Output Type: Push-Pull
  • Current - Output High, Low: 8mA, 8mA
  • Voltage - Supply: 2 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 20-VFSOP (0.118", 3.00mm Width)
  • Supplier Device Package: 20-VSSOP
패키지: 20-VFSOP (0.118", 3.00mm Width)
재고19,872
hot TC75W54FK(TE85L,F)
Toshiba Semiconductor and Storage

IC OP AMP GP 900KHZ US8

  • Amplifier Type: General Purpose
  • Number of Circuits: 2
  • Output Type: -
  • Slew Rate: 0.7 V/µs
  • Gain Bandwidth Product: 900kHz
  • -3db Bandwidth: -
  • Current - Input Bias: 1pA
  • Voltage - Input Offset: 2mV
  • Current - Supply: 200µA
  • Current - Output / Channel: 700µA
  • Voltage - Supply, Single/Dual (±): 1.8 V ~ 7 V, ±0.9 V ~ 3.5 V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-VFSOP (0.091", 2.30mm Width)
  • Supplier Device Package: US8
패키지: 8-VFSOP (0.091", 2.30mm Width)
재고36,000
TL1L4-LL1,L
Toshiba Semiconductor and Storage

LED LETERAS WARM WHT 2700K 2SMD

  • Color: White, Warm
  • CCT (K): 2700K
  • Flux @ 85°C, Current - Test: 115 lm (100 lm ~ 130 lm)
  • Flux @ 25°C, Current - Test: -
  • Current - Test: 350mA
  • Voltage - Forward (Vf) (Typ): 2.8V
  • Lumens/Watt @ Current - Test: 117 lm/W
  • CRI (Color Rendering Index): 80
  • Current - Max: 1.5A
  • Viewing Angle: 120°
  • Mounting Type: Surface Mount
  • Package / Case: 1414 (3535 Metric)
  • Supplier Device Package: 3535
  • Size / Dimension: 0.138" L x 0.138" W (3.50mm x 3.50mm)
  • Height - Seated (Max): 0.085" (2.15mm)
패키지: 1414 (3535 Metric)
재고2,160
TL2WU-DWJ,L
Toshiba Semiconductor and Storage

LED WHITE 65MW CSP 0603

  • Color: White
  • Configuration: -
  • Lens Color: -
  • Lens Transparency: -
  • Millicandela Rating: 220mcd
  • Lens Style/Size: Rectangle with Flat Top, 0.35mm x 0.65mm
  • Voltage - Forward (Vf) (Typ): 2.6V
  • Current - Test: 5mA
  • Viewing Angle: -
  • Mounting Type: Surface Mount
  • Wavelength - Dominant: -
  • Wavelength - Peak: -
  • Features: -
  • Package / Case: 0201 (0603 Metric)
  • Supplier Device Package: 0603
  • Size / Dimension: 0.65mm L x 0.35mm W
  • Height (Max): 0.39mm
패키지: 0201 (0603 Metric)
재고2,484
TLP3063SCF
Toshiba Semiconductor and Storage

OPTOISOLATOR 5KV TRIAC 6DIP 5L

  • Output Type: Triac
  • Zero Crossing Circuit: Yes
  • Number of Channels: 1
  • Voltage - Isolation: 5000Vrms
  • Voltage - Off State: 600V
  • Static dV/dt (Min): 200V/µs
  • Current - LED Trigger (Ift) (Max): 5mA
  • Current - On State (It (RMS)) (Max): 100mA
  • Current - Hold (Ih): 600µA (Typ)
  • Turn On Time: -
  • Voltage - Forward (Vf) (Typ): 1.15V
  • Current - DC Forward (If) (Max): 50mA
  • Operating Temperature: -40°C ~ 100°C
  • Mounting Type: Through Hole
  • Package / Case: 6-DIP (0.300", 7.62mm), 5 Leads
  • Supplier Device Package: 6-DIP (Cut), 5 Lead
  • Approvals: BSI, SEMKO, UR
패키지: 6-DIP (0.300", 7.62mm), 5 Leads
재고5,436
TLP293-4(GB,E
Toshiba Semiconductor and Storage

OPTOISOLATOR 3.75KV TRANS SO16

  • Number of Channels: 4
  • Voltage - Isolation: 3750Vrms
  • Current Transfer Ratio (Min): 100% @ 5mA
  • Current Transfer Ratio (Max): 600% @ 5mA
  • Turn On / Turn Off Time (Typ): 3µs, 3µs
  • Rise / Fall Time (Typ): 2µs, 3µs
  • Input Type: DC
  • Output Type: Transistor
  • Voltage - Output (Max): 80V
  • Current - Output / Channel: 50mA
  • Voltage - Forward (Vf) (Typ): 1.25V
  • Current - DC Forward (If) (Max): 50mA
  • Vce Saturation (Max): 300mV
  • Operating Temperature: -55°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.179", 4.55mm Width)
  • Supplier Device Package: 16-SO
패키지: 16-SOIC (0.179", 4.55mm Width)
재고7,902
TCR3UG50B,LF
Toshiba Semiconductor and Storage

LOW DROPOUT (LDO) LINEAR VOLTAGE

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 5V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.195V @ 300mA
  • Current - Output: 300mA
  • Current - Quiescent (Iq): 680nA
  • Current - Supply (Max): -
  • PSRR: 70dB (1kHz)
  • Control Features: Enable
  • Protection Features: Inrush Current, Over Current, Thermal Shutdown
  • Operating Temperature: -40°C ~ 85°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-XFBGA, WLCSP
  • Supplier Device Package: 4-WCSP-F (0.65x0.65)
패키지: 4-XFBGA, WLCSP
재고74,784
TC7QPB9307FK(EL)
Toshiba Semiconductor and Storage

X34 GENERAL-PURPOSE BUS SWITCH L

  • Type: Bus Switch
  • Circuit: 4 x 1:1
  • Independent Circuits: 1
  • Current - Output High, Low: -
  • Voltage Supply Source: Dual Supply
  • Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 14-VFSOP (0.118", 3.00mm Width)
  • Supplier Device Package: 14-VSSOP
패키지: 14-VFSOP (0.118", 3.00mm Width)
재고23,832
TB62747AFG-C8-EL
Toshiba Semiconductor and Storage

16-CH CONSTANT CURRENT LED DRIVE

  • Type: Linear
  • Topology: Shift Register
  • Internal Switch(s): Yes
  • Number of Outputs: 16
  • Voltage - Supply (Min): 3V
  • Voltage - Supply (Max): 5.5V
  • Voltage - Output: 26V
  • Current - Output / Channel: 45mA
  • Frequency: -
  • Dimming: -
  • Applications: LED Lighting
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-SOP (0.236", 6.00mm Width)
  • Supplier Device Package: 24-SSOP
패키지: -
재고7,089
GT50JR22-STA1-E-S
Toshiba Semiconductor and Storage

PB-F IGBT / TRANSISTOR TO-3PN(OS

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 100 A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
  • Power - Max: 230 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P(N)
패키지: -
재고39
CMZ12-TE12L-Q-M
Toshiba Semiconductor and Storage

DIODE ZENER 12V 2W MFLAT

  • Voltage - Zener (Nom) (Vz): 12 V
  • Tolerance: ±10%
  • Power - Max: 2 W
  • Impedance (Max) (Zzt): 30 Ohms
  • Current - Reverse Leakage @ Vr: 10 µA @ 8 V
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: M-FLAT (2.4x3.8)
패키지: -
재고30,690
TC7WH14FU-TE12L
Toshiba Semiconductor and Storage

IC INVERTER SCHMITT TRIPLE 8SSOP

  • Logic Type: Inverter
  • Number of Circuits: 3
  • Number of Inputs: 1
  • Features: Schmitt Trigger
  • Voltage - Supply: 2V ~ 5.5V
  • Current - Quiescent (Max): 2 µA
  • Current - Output High, Low: 8mA, 8mA
  • Logic Level - Low: 0.9V ~ 1.65V
  • Logic Level - High: 2.2V ~ 3.85V
  • Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SSOP
  • Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
패키지: -
Request a Quote
SSM6P36TU-LF
Toshiba Semiconductor and Storage

MOSFET 2P-CH 20V 0.33A UF6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate, 1.5V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 330mA (Ta)
  • Rds On (Max) @ Id, Vgs: 1.31Ohm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V
  • Power - Max: 500mW (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: UF6
패키지: -
재고11,769
TK040N65Z-S1F
Toshiba Semiconductor and Storage

MOSFET N-CH 650V 57A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 57A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 2.85mA
  • Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 360W (Tc)
  • Rds On (Max) @ Id, Vgs: 40mOhm @ 28.5A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
패키지: -
재고450
RN4990FE-LXHF-CT
Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYMMETR

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7kOhms
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 250MHz, 200MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
패키지: -
재고12,000
TCR3DG25-LF
Toshiba Semiconductor and Storage

PB-F CMOS POINT DDRULATOR (SINGL

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 2.5V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.275V @ 300mA
  • Current - Output: 300mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): -
  • PSRR: 70dB (1kHz)
  • Control Features: Enable
  • Protection Features: Over Current, Over Temperature
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-XFBGA, CSPBGA
  • Supplier Device Package: 4-WCSPE (0.65x0.65)
패키지: -
재고15,000
RN2405-LF
Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SMINI

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 2.2 kOhms
  • Resistor - Emitter Base (R2) (Ohms): 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200 MHz
  • Power - Max: 200 mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
패키지: -
재고9,000
RN2407-LF
Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V SMINI

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 10 kOhms
  • Resistor - Emitter Base (R2) (Ohms): 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200 MHz
  • Power - Max: 200 mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
패키지: -
재고8,985