페이지 163 - Toshiba Semiconductor and Storage 제품

부품 번호	제조업체	설명	패키지	재고
GT10J312(Q)	Toshiba Semiconductor and Storage	IGBT 600V 10A 60W TO220SM IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 10A Current - Collector Pulsed (Icm): 20A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A Power - Max: 60W Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 400ns/400ns Test Condition: 300V, 10A, 100 Ohm, 15V Reverse Recovery Time (trr): 200ns Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-220SM	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고2,992
TK40P03M1(T6RSS-Q)	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 40A 3DP 2-7K1A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 10.8 mOhm @ 20A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: DP Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고7,600
2SK2847(F)	Toshiba Semiconductor and Storage	MOSFET N-CH 900V 8A TO-3PN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P(N)IS Package / Case: TO-3P-3, SC-65-3	패키지: TO-3P-3, SC-65-3	재고5,424
TK39N60W5,S1VF	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 38.8A T0247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.9mA Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 300V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 270W (Tc) Rds On (Max) @ Id, Vgs: 74 mOhm @ 19.4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	패키지: TO-247-3	재고21,132
3SK291(TE85L,F)	Toshiba Semiconductor and Storage	MOSFET N-CH SMQ Transistor Type: N-Channel Dual Gate Frequency: 800MHz Gain: 22.5dB Voltage - Test: 6V Current Rating: 30mA Noise Figure: 2.5dB Current - Test: 10mA Power - Output: - Voltage - Rated: 12.5V Package / Case: SC-61AA Supplier Device Package: SMQ	패키지: SC-61AA	재고54,072
RN1302,LF	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 0.1W USM Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	패키지: SC-70, SOT-323	재고58,632
RN2905T5LFT	Toshiba Semiconductor and Storage	TRANS 2PNP PREBIAS 0.2W US6 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	패키지: 6-TSSOP, SC-88, SOT-363	재고4,304
RN2903,LF(CT	Toshiba Semiconductor and Storage	TRANS 2PNP PREBIAS 0.2W US6 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	패키지: 6-TSSOP, SC-88, SOT-363	재고27,378
1SS190TE85LF	Toshiba Semiconductor and Storage	DIODE GEN PURP 80V 100MA SC59-3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 500nA @ 80V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SC-59-3 Operating Temperature - Junction: 125°C (Max)	패키지: TO-236-3, SC-59, SOT-23-3	재고30,000
TA78L005AP,T6F(J	Toshiba Semiconductor and Storage	IC REG LINEAR 150MA LSTM Output Configuration: - Output Type: - Number of Regulators: 1 Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 150mA Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: -30°C ~ 85°C Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: LSTM	패키지: TO-226-3, TO-92-3 Long Body	재고6,688
TA4800AF(T6L1,Q)	Toshiba Semiconductor and Storage	IC REG LINEAR POS ADJ 1A 5HSIP Output Configuration: Positive Output Type: Adjustable Number of Regulators: 1 Voltage - Input (Max): 16V Voltage - Output (Min/Fixed): 1.5V Voltage - Output (Max): 9V Voltage Dropout (Max): 0.5V @ 500mA Current - Output: 1A Current - Quiescent (Iq): - Current - Supply (Max): 1.7mA ~ 20mA PSRR: 63dB (120Hz) Control Features: - Protection Features: Over Current, Over Temperature Operating Temperature: -40°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-252-6, DPak (5 Leads + Tab) Supplier Device Package: 5-HSIP	패키지: TO-252-6, DPak (5 Leads + Tab)	재고4,944
TB7101F(T5L3.3,F)	Toshiba Semiconductor and Storage	IC REG BUCK 3.3V 1A SYNC 8SON Function: Step-Down Output Configuration: Positive Topology: Buck Output Type: Fixed Number of Outputs: 1 Voltage - Input (Min): 4.3V Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 3.3V Voltage - Output (Max): - Current - Output: 1A Frequency - Switching: 1MHz Synchronous Rectifier: Yes Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: PS-8 (2.9x2.4)	패키지: 8-SMD, Flat Lead	재고68,400
TBD62503APG	Toshiba Semiconductor and Storage	IC LOAD SWITCH 7CH 0.3A 16DIP Switch Type: General Purpose Number of Outputs: 7 Ratio - Input:Output: 1:1 Output Configuration: Low Side Output Type: N-Channel Interface: On/Off Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.75A Rds On (Typ): - Input Type: Inverting Features: - Fault Protection: - Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 16-DIP (0.300", 7.62mm) Supplier Device Package: 16-DIP	패키지: 16-DIP (0.300", 7.62mm)	재고7,668
TCK1024G,LF	Toshiba Semiconductor and Storage	IC PWR SWITCH P-CHAN 1:1 WCSP6E Switch Type: General Purpose Number of Outputs: 1 Ratio - Input:Output: 1:1 Output Configuration: High Side Output Type: P-Channel Interface: On/Off Voltage - Load: 1.4 V ~ 5.5 V Voltage - Supply (Vcc/Vdd): - Current - Output (Max): 1.54A Rds On (Typ): 31 mOhm Input Type: Non-Inverting Features: Load Discharge Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 6-UFBGA, WLCSP Supplier Device Package: 6-WCSPE (0.80x1.2)	패키지: 6-UFBGA, WLCSP	재고48,708
TC74LVX02FTELM	Toshiba Semiconductor and Storage	IC GATE NOR 4CH 2-INP 14-TSSOP Logic Type: NOR Gate Number of Circuits: 4 Number of Inputs: 2 Features: - Voltage - Supply: 2 V ~ 3.6 V Current - Quiescent (Max): 2µA Current - Output High, Low: 4mA, 4mA Logic Level - Low: 0.5 V ~ 0.8 V Logic Level - High: 1.5 V ~ 2.4 V Max Propagation Delay @ V, Max CL: 10.1ns @ 3.3V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: 14-TSSOP Package / Case: 14-TSSOP (0.173", 4.40mm Width)	패키지: 14-TSSOP (0.173", 4.40mm Width)	재고3,456
TC7PA34FU(T5L,F,T)	Toshiba Semiconductor and Storage	IC BUFFER NON-INV DUAL 6SSOP Logic Type: Buffer, Non-Inverting Number of Elements: 2 Number of Bits per Element: 1 Input Type: - Output Type: Push-Pull Current - Output High, Low: 24mA, 24mA Voltage - Supply: 1.8 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	패키지: 6-TSSOP, SC-88, SOT-363	재고3,824
DF2B7M2SL,L3F	Toshiba Semiconductor and Storage	TVS DIODE 5VWM 20VC Type: Steering (Rail to Rail) Unidirectional Channels: 1 Bidirectional Channels: - Voltage - Reverse Standoff (Typ): 5V (Max) Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 20V Current - Peak Pulse (10/1000µs): 2A (8/20µs) Power - Peak Pulse: 40W Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: 0.2pF @ 1MHz Operating Temperature: - Mounting Type: Surface Mount Package / Case: 0201 (0603 Metric) Supplier Device Package: SL2	패키지: 0201 (0603 Metric)	재고4,842
DF2S30FS,L3M	Toshiba Semiconductor and Storage	TVS DIODE 23VWM Type: Zener Unidirectional Channels: 1 Bidirectional Channels: - Voltage - Reverse Standoff (Typ): 23V (Max) Voltage - Breakdown (Min): 28V Voltage - Clamping (Max) @ Ipp: - Current - Peak Pulse (10/1000µs): - Power - Peak Pulse: - Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: 7pF @ 1MHz Operating Temperature: - Mounting Type: Surface Mount Package / Case: SOD-923 Supplier Device Package: SOD-923	패키지: SOD-923	재고945,546
4N36(SHORT,F)	Toshiba Semiconductor and Storage	OPTOISO 2.5KV TRANS W/BASE 6DIP Number of Channels: 1 Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 40% @ 10mA Current Transfer Ratio (Max): - Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): - Input Type: DC Output Type: Transistor with Base Voltage - Output (Max): 30V Current - Output / Channel: 100mA Voltage - Forward (Vf) (Typ): 1.15V Current - DC Forward (If) (Max): 60mA Vce Saturation (Max): 300mV Operating Temperature: -55°C ~ 100°C Mounting Type: Through Hole Package / Case: 6-DIP (0.300", 7.62mm) Supplier Device Package: 6-DIP	패키지: 6-DIP (0.300", 7.62mm)	재고3,834
TCR2EE14,LM(CT	Toshiba Semiconductor and Storage	200MA LDO VOUT1.4V DROPOUT180MV Output Configuration: - Output Type: - Number of Regulators: - Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: - Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고4,096
TCR2EE125,LM(CT	Toshiba Semiconductor and Storage	200MA LDO VOUT1.25V DROPOUT180MV Output Configuration: - Output Type: - Number of Regulators: - Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: - Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고4,896
TCR3UM28A,LF	Toshiba Semiconductor and Storage	LOW DROPOUT (LDO) LINEAR VOLTAGE Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 2.8V Voltage - Output (Max): - Voltage Dropout (Max): 0.327V @ 300mA Current - Output: 300mA Current - Quiescent (Iq): 680nA Current - Supply (Max): - PSRR: 70dB (1kHz) Control Features: Current Limit, Enable Protection Features: Over Current, Over Temperature Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 4-UDFN Exposed Pad Supplier Device Package: 4-DFN (1x1)	패키지: 4-UDFN Exposed Pad	재고3,280
RN1106-LXHF-CT	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 50V 0.1A SSM Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 4.7 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 100 mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	패키지: -	재고17,640
TCR3UF18A-LM-CT	Toshiba Semiconductor and Storage	IC REG LINEAR 1.8V 300MA SMV Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 1.8V Voltage - Output (Max): - Voltage Dropout (Max): 0.464V @ 300mA Current - Output: 300mA Current - Quiescent (Iq): 680 nA Current - Supply (Max): - PSRR: 70dB (1kHz) Control Features: - Protection Features: Over Current, Over Temperature Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	패키지: -	재고21,660
2SC5354-TOJSQ-O	Toshiba Semiconductor and Storage	TRANSISTOR NPN TO-3PN Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote
TK5A80E-S4X	Toshiba Semiconductor and Storage	PB-F POWER MOSFET TRANSISTOR TO- FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 2.5A, 10V Operating Temperature: 150°C Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	패키지: -	재고150
TPH1R104PB-L1XHQ	Toshiba Semiconductor and Storage	MOSFET N-CH 40V 120A 8SOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 120A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 960mW (Ta), 132W (Tc) Rds On (Max) @ Id, Vgs: 1.14mOhm @ 60A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	패키지: -	재고23,532
TK170V65Z-LQ	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 18A 5DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 730µA Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1635 pF @ 300 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 170mOhm @ 9A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: 4-DFN-EP (8x8) Package / Case: 4-VSFN Exposed Pad	패키지: -	재고14,850

GT10J312(Q)

Toshiba Semiconductor and Storage

IGBT 600V 10A 60W TO220SM

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 10A
Current - Collector Pulsed (Icm): 20A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A
Power - Max: 60W
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 400ns/400ns
Test Condition: 300V, 10A, 100 Ohm, 15V
Reverse Recovery Time (trr): 200ns
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-220SM

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고2,992

TK40P03M1(T6RSS-Q)

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 40A 3DP 2-7K1A

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 10.8 mOhm @ 20A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: DP
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고7,600

2SK2847(F)

Toshiba Semiconductor and Storage

MOSFET N-CH 900V 8A TO-3PN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 85W (Tc)
Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 4A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3P(N)IS
Package / Case: TO-3P-3, SC-65-3

패키지: TO-3P-3, SC-65-3

재고5,424

TK39N60W5,S1VF

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 38.8A T0247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 1.9mA
Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 300V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 270W (Tc)
Rds On (Max) @ Id, Vgs: 74 mOhm @ 19.4A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247
Package / Case: TO-247-3

패키지: TO-247-3

재고21,132

3SK291(TE85L,F)

Toshiba Semiconductor and Storage

MOSFET N-CH SMQ

Transistor Type: N-Channel Dual Gate
Frequency: 800MHz
Gain: 22.5dB
Voltage - Test: 6V
Current Rating: 30mA
Noise Figure: 2.5dB
Current - Test: 10mA
Power - Output: -
Voltage - Rated: 12.5V
Package / Case: SC-61AA
Supplier Device Package: SMQ

패키지: SC-61AA

재고54,072

RN1302,LF

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.1W USM

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: USM

패키지: SC-70, SOT-323

재고58,632

RN2905T5LFT

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.2W US6

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

패키지: 6-TSSOP, SC-88, SOT-363

재고4,304

RN2903,LF(CT

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.2W US6

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 22k
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

패키지: 6-TSSOP, SC-88, SOT-363

재고27,378

1SS190TE85LF

Toshiba Semiconductor and Storage

DIODE GEN PURP 80V 100MA SC59-3

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 500nA @ 80V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SC-59-3
Operating Temperature - Junction: 125°C (Max)

패키지: TO-236-3, SC-59, SOT-23-3

재고30,000

TA78L005AP,T6F(J

Toshiba Semiconductor and Storage

IC REG LINEAR 150MA LSTM

Output Configuration: -
Output Type: -
Number of Regulators: 1
Voltage - Input (Max): -
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 150mA
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: -
Control Features: -
Protection Features: -
Operating Temperature: -30°C ~ 85°C
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: LSTM

패키지: TO-226-3, TO-92-3 Long Body

재고6,688

TA4800AF(T6L1,Q)

Toshiba Semiconductor and Storage

IC REG LINEAR POS ADJ 1A 5HSIP

Output Configuration: Positive
Output Type: Adjustable
Number of Regulators: 1
Voltage - Input (Max): 16V
Voltage - Output (Min/Fixed): 1.5V
Voltage - Output (Max): 9V
Voltage Dropout (Max): 0.5V @ 500mA
Current - Output: 1A
Current - Quiescent (Iq): -
Current - Supply (Max): 1.7mA ~ 20mA
PSRR: 63dB (120Hz)
Control Features: -
Protection Features: Over Current, Over Temperature
Operating Temperature: -40°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-252-6, DPak (5 Leads + Tab)
Supplier Device Package: 5-HSIP

패키지: TO-252-6, DPak (5 Leads + Tab)

재고4,944

TB7101F(T5L3.3,F)

Toshiba Semiconductor and Storage

IC REG BUCK 3.3V 1A SYNC 8SON

Function: Step-Down
Output Configuration: Positive
Topology: Buck
Output Type: Fixed
Number of Outputs: 1
Voltage - Input (Min): 4.3V
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 3.3V
Voltage - Output (Max): -
Current - Output: 1A
Frequency - Switching: 1MHz
Synchronous Rectifier: Yes
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: PS-8 (2.9x2.4)

패키지: 8-SMD, Flat Lead

재고68,400

TBD62503APG

Toshiba Semiconductor and Storage

IC LOAD SWITCH 7CH 0.3A 16DIP

Switch Type: General Purpose
Number of Outputs: 7
Ratio - Input:Output: 1:1
Output Configuration: Low Side
Output Type: N-Channel
Interface: On/Off
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.75A
Rds On (Typ): -
Input Type: Inverting
Features: -
Fault Protection: -
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 16-DIP (0.300", 7.62mm)
Supplier Device Package: 16-DIP

패키지: 16-DIP (0.300", 7.62mm)

재고7,668

TCK1024G,LF

Toshiba Semiconductor and Storage

IC PWR SWITCH P-CHAN 1:1 WCSP6E

Switch Type: General Purpose
Number of Outputs: 1
Ratio - Input:Output: 1:1
Output Configuration: High Side
Output Type: P-Channel
Interface: On/Off
Voltage - Load: 1.4 V ~ 5.5 V
Voltage - Supply (Vcc/Vdd): -
Current - Output (Max): 1.54A
Rds On (Typ): 31 mOhm
Input Type: Non-Inverting
Features: Load Discharge
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 6-UFBGA, WLCSP
Supplier Device Package: 6-WCSPE (0.80x1.2)

패키지: 6-UFBGA, WLCSP

재고48,708

TC74LVX02FTELM

Toshiba Semiconductor and Storage

IC GATE NOR 4CH 2-INP 14-TSSOP

Logic Type: NOR Gate
Number of Circuits: 4
Number of Inputs: 2
Features: -
Voltage - Supply: 2 V ~ 3.6 V
Current - Quiescent (Max): 2µA
Current - Output High, Low: 4mA, 4mA
Logic Level - Low: 0.5 V ~ 0.8 V
Logic Level - High: 1.5 V ~ 2.4 V
Max Propagation Delay @ V, Max CL: 10.1ns @ 3.3V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: 14-TSSOP
Package / Case: 14-TSSOP (0.173", 4.40mm Width)

패키지: 14-TSSOP (0.173", 4.40mm Width)

재고3,456

TC7PA34FU(T5L,F,T)

Toshiba Semiconductor and Storage

IC BUFFER NON-INV DUAL 6SSOP

Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Number of Bits per Element: 1
Input Type: -
Output Type: Push-Pull
Current - Output High, Low: 24mA, 24mA
Voltage - Supply: 1.8 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

패키지: 6-TSSOP, SC-88, SOT-363

재고3,824

DF2B7M2SL,L3F

Toshiba Semiconductor and Storage

TVS DIODE 5VWM 20VC

Type: Steering (Rail to Rail)
Unidirectional Channels: 1
Bidirectional Channels: -
Voltage - Reverse Standoff (Typ): 5V (Max)
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 20V
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Power - Peak Pulse: 40W
Power Line Protection: No
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Supplier Device Package: SL2

패키지: 0201 (0603 Metric)

재고4,842

DF2S30FS,L3M

Toshiba Semiconductor and Storage

TVS DIODE 23VWM

Type: Zener
Unidirectional Channels: 1
Bidirectional Channels: -
Voltage - Reverse Standoff (Typ): 23V (Max)
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: -
Current - Peak Pulse (10/1000µs): -
Power - Peak Pulse: -
Power Line Protection: No
Applications: General Purpose
Capacitance @ Frequency: 7pF @ 1MHz
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SOD-923
Supplier Device Package: SOD-923

패키지: SOD-923

재고945,546

4N36(SHORT,F)

Toshiba Semiconductor and Storage

OPTOISO 2.5KV TRANS W/BASE 6DIP

Number of Channels: 1
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 40% @ 10mA
Current Transfer Ratio (Max): -
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): -
Input Type: DC
Output Type: Transistor with Base
Voltage - Output (Max): 30V
Current - Output / Channel: 100mA
Voltage - Forward (Vf) (Typ): 1.15V
Current - DC Forward (If) (Max): 60mA
Vce Saturation (Max): 300mV
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Package / Case: 6-DIP (0.300", 7.62mm)
Supplier Device Package: 6-DIP

패키지: 6-DIP (0.300", 7.62mm)

재고3,834

TCR2EE14,LM(CT

Toshiba Semiconductor and Storage

200MA LDO VOUT1.4V DROPOUT180MV

Output Configuration: -
Output Type: -
Number of Regulators: -
Voltage - Input (Max): -
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: -
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: -
Control Features: -
Protection Features: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고4,096

TCR2EE125,LM(CT

Toshiba Semiconductor and Storage

200MA LDO VOUT1.25V DROPOUT180MV

Output Configuration: -
Output Type: -
Number of Regulators: -
Voltage - Input (Max): -
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: -
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: -
Control Features: -
Protection Features: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고4,896

TCR3UM28A,LF

Toshiba Semiconductor and Storage

LOW DROPOUT (LDO) LINEAR VOLTAGE

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 2.8V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.327V @ 300mA
Current - Output: 300mA
Current - Quiescent (Iq): 680nA
Current - Supply (Max): -
PSRR: 70dB (1kHz)
Control Features: Current Limit, Enable
Protection Features: Over Current, Over Temperature
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 4-UDFN Exposed Pad
Supplier Device Package: 4-DFN (1x1)

패키지: 4-UDFN Exposed Pad

재고3,280

RN1106-LXHF-CT

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SSM

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 4.7 kOhms
Resistor - Emitter Base (R2) (Ohms): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM

패키지: -

재고17,640

TCR3UF18A-LM-CT

Toshiba Semiconductor and Storage

IC REG LINEAR 1.8V 300MA SMV

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 1.8V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.464V @ 300mA
Current - Output: 300mA
Current - Quiescent (Iq): 680 nA
Current - Supply (Max): -
PSRR: 70dB (1kHz)
Control Features: -
Protection Features: Over Current, Over Temperature
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: SMV

패키지: -

재고21,660

2SC5354-TOJSQ-O

Toshiba Semiconductor and Storage

TRANSISTOR NPN TO-3PN

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

TK5A80E-S4X

Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR TO-

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 2.5A, 10V
Operating Temperature: 150°C
Mounting Type: Through Hole
Supplier Device Package: TO-220SIS
Package / Case: TO-220-3 Full Pack

패키지: -

재고150

TPH1R104PB-L1XHQ

Toshiba Semiconductor and Storage

MOSFET N-CH 40V 120A 8SOP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Rds On (Max) @ Id, Vgs: 1.14mOhm @ 60A, 10V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP Advance (5x5)
Package / Case: 8-PowerVDFN

패키지: -

재고23,532

TK170V65Z-LQ

Toshiba Semiconductor and Storage

MOSFET N-CH 650V 18A 5DFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 730µA
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1635 pF @ 300 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 9A, 10V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: 4-DFN-EP (8x8)
Package / Case: 4-VSFN Exposed Pad

패키지: -

재고14,850