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Toshiba Semiconductor and Storage 제품

기록 4,549
페이지  137/163
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TPC8A06-H(TE12LQM)
Toshiba Semiconductor and Storage

MOSFET N-CH 30V 12A 8SOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: Schottky Diode (Body)
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 10.1 mOhm @ 6A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP (5.5x6.0)
  • Package / Case: 8-SOIC (0.173", 4.40mm Width)
패키지: 8-SOIC (0.173", 4.40mm Width)
재고3,200
TK40E10K3,S1X(S
Toshiba Semiconductor and Storage

MOSFET N-CH 100V 40A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 10V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 15 mOhm @ 20A, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
패키지: TO-220-3
재고5,248
TK34A10N1,S4X
Toshiba Semiconductor and Storage

MOSFET N-CH 100V 34A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 17A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
패키지: TO-220-3 Full Pack, Isolated Tab
재고5,472
T2N7002AK,LM
Toshiba Semiconductor and Storage

MOSFET N-CH 60V 0.2A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 320mW (Ta)
  • Rds On (Max) @ Id, Vgs: 3.9 Ohm @ 100mA, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고54,984
TK6A65D(STA4,Q,M)
Toshiba Semiconductor and Storage

MOSFET N-CH 650V 5A TO-220SIS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.11 Ohm @ 3A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
패키지: TO-220-3 Full Pack
재고20,640
TK13A60D(STA4,Q,M)
Toshiba Semiconductor and Storage

MOSFET N-CH 600V 13A TO220SIS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 430 mOhm @ 6.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
패키지: TO-220-3 Full Pack
재고24,654
SSM6N36FE,LM
Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.5A ES6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 500mA
  • Rds On (Max) @ Id, Vgs: 630 mOhm @ 200mA, 5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6 (1.6x1.6)
패키지: SOT-563, SOT-666
재고4,064
2SC3668-Y,T2WNLF(J
Toshiba Semiconductor and Storage

TRANS NPN 2A 50V SC71

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
  • Power - Max: 1W
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: SC-71
  • Supplier Device Package: MSTM
패키지: SC-71
재고3,232
RN2903,LF
Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.2W US6

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): 22k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
패키지: 6-TSSOP, SC-88, SOT-363
재고52,122
CTS521,L3F
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 200MA CST2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 200mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 30µA @ 30V
  • Capacitance @ Vr, F: 25pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-882
  • Supplier Device Package: CST2
  • Operating Temperature - Junction: 125°C (Max)
패키지: SOD-882
재고105,672
TA78L005AP,T6WNF(J
Toshiba Semiconductor and Storage

IC REG LINEAR 150MA LSTM

  • Output Configuration: -
  • Output Type: -
  • Number of Regulators: 1
  • Voltage - Input (Max): -
  • Voltage - Output (Min/Fixed): -
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: 150mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: -
  • Protection Features: -
  • Operating Temperature: -30°C ~ 85°C
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: LSTM
패키지: TO-226-3, TO-92-3 Long Body
재고7,712
TCR2EF28,LM(CT
Toshiba Semiconductor and Storage

IC REG LINEAR 2.8V 200MA SMV

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 2.8V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: 200mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 60µA
  • PSRR: 73dB (1kHz)
  • Control Features: Enable
  • Protection Features: Over Current
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: SMV
패키지: SC-74A, SOT-753
재고7,504
TCR2LN28,LF
Toshiba Semiconductor and Storage

IC REG LINEAR 2.8V 200MA 4-SDFN

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 2.8V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: 200mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 2µA
  • PSRR: -
  • Control Features: Enable
  • Protection Features: Over Current
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-XFDFN Exposed Pad
  • Supplier Device Package: 4-SDFN (0.8x0.8)
패키지: 4-XFDFN Exposed Pad
재고96,486
TC74LVX573FTEL
Toshiba Semiconductor and Storage

IC LATCH OCTAL D-TYPE 20-TSSOP

  • Logic Type: D-Type Transparent Latch
  • Circuit: 8:8
  • Output Type: Tri-State
  • Voltage - Supply: 2 V ~ 3.6 V
  • Independent Circuits: 1
  • Delay Time - Propagation: 5.9ns
  • Current - Output High, Low: 4mA, 4mA
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 20-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 20-TSSOP
패키지: 20-TSSOP (0.173", 4.40mm Width)
재고7,456
TC75S59FE(TE85L,F)
Toshiba Semiconductor and Storage

IC COMP GP CMOS ESV

  • Type: General Purpose
  • Number of Elements: 1
  • Output Type: Open Drain
  • Voltage - Supply, Single/Dual (±): 1.8 V ~ 7 V, ±0.9 V ~ 3.5 V
  • Voltage - Input Offset (Max): 7mV @ 5V
  • Current - Input Bias (Max): 1pA
  • Current - Output (Typ): 25mA
  • Current - Quiescent (Max): 220µA
  • CMRR, PSRR (Typ): -
  • Propagation Delay (Max): 200ns
  • Hysteresis: -
  • Operating Temperature: -40°C ~ 85°C
  • Package / Case: SOT-553
  • Mounting Type: Surface Mount
  • Supplier Device Package: ESV
패키지: SOT-553
재고6,928
TA75W558FU,LF
Toshiba Semiconductor and Storage

IC OPAMP GP 3MHZ 8SSOP

  • Amplifier Type: General Purpose
  • Number of Circuits: 2
  • Output Type: -
  • Slew Rate: 1 V/µs
  • Gain Bandwidth Product: 3MHz
  • -3db Bandwidth: -
  • Current - Input Bias: 60nA
  • Voltage - Input Offset: 500µV
  • Current - Supply: 4mA
  • Current - Output / Channel: 40mA
  • Voltage - Supply, Single/Dual (±): ±4 V ~ 18 V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
  • Supplier Device Package: SM8
패키지: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
재고48,258
TL1WK-DW1,LCS
Toshiba Semiconductor and Storage

LED LETERAS COOL WHT 6500K 2SMD

  • Color: White, Cool
  • CCT (K): 6500K
  • Flux @ 85°C, Current - Test: -
  • Flux @ 25°C, Current - Test: 22 lm (Typ)
  • Current - Test: 60mA
  • Voltage - Forward (Vf) (Typ): 2.8V
  • Lumens/Watt @ Current - Test: 130 lm/W
  • CRI (Color Rendering Index): 80
  • Current - Max: 180mA
  • Viewing Angle: 165°
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, No Lead
  • Supplier Device Package: SMD
  • Size / Dimension: 0.026" L x 0.026" W (0.65mm x 0.65mm)
  • Height - Seated (Max): 0.015" (0.39mm)
패키지: 2-SMD, No Lead
재고6,246
DF10G7M1N,LF
Toshiba Semiconductor and Storage

TVS DIODE 5VWM 12VC 10DFN

  • Type: Steering (Rail to Rail)
  • Unidirectional Channels: 4
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 5V (Max)
  • Voltage - Breakdown (Min): 6V
  • Voltage - Clamping (Max) @ Ipp: 12V (Typ)
  • Current - Peak Pulse (10/1000µs): 1A (8/20µs)
  • Power - Peak Pulse: -
  • Power Line Protection: Yes
  • Applications: HDMI
  • Capacitance @ Frequency: 0.3pF @ 1MHz
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 10-UFDFN
  • Supplier Device Package: 10-DFN (2.5x1)
패키지: 10-UFDFN
재고21,888
TLP558(F)
Toshiba Semiconductor and Storage

OPTOISO 2.5KV TRI-STATE 8DIP

  • Number of Channels: 1
  • Inputs - Side 1/Side 2: 1/0
  • Voltage - Isolation: 2500Vrms
  • Common Mode Transient Immunity (Min): 1kV/µs
  • Input Type: DC
  • Output Type: Tri-State
  • Current - Output / Channel: 40mA
  • Data Rate: 5Mbps
  • Propagation Delay tpLH / tpHL (Max): 400ns, 400ns
  • Rise / Fall Time (Typ): 35ns, 20ns
  • Voltage - Forward (Vf) (Typ): 1.55V
  • Current - DC Forward (If) (Max): 10mA
  • Voltage - Supply: 4.5 V ~ 20 V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-DIP
패키지: 8-DIP (0.300", 7.62mm)
재고6,732
TLP155E(E)
Toshiba Semiconductor and Storage

OPTOISO 3.75KV GATE DRIVER 6SO-5

  • Technology: Optical Coupling
  • Number of Channels: 1
  • Voltage - Isolation: 3750Vrms
  • Common Mode Transient Immunity (Min): 15kV/µs
  • Propagation Delay tpLH / tpHL (Max): 170ns, 170ns
  • Pulse Width Distortion (Max): -
  • Rise / Fall Time (Typ): 35ns, 15ns
  • Current - Output High, Low: 400mA, 400mA
  • Current - Peak Output: 600mA
  • Voltage - Forward (Vf) (Typ): 1.55V
  • Current - DC Forward (If) (Max): 20mA
  • Voltage - Supply: 10 V ~ 30 V
  • Operating Temperature: -40°C ~ 100°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-SOIC (0.179", 4.55mm Width) 5 Leads
  • Supplier Device Package: 6-SO, 5 Lead
  • Approvals: CSA, cUL, UL
패키지: 6-SOIC (0.179", 4.55mm Width) 5 Leads
재고8,910
74VHC153FT
Toshiba Semiconductor and Storage

X31 PB-F VHS TSSOP 16 CMOS LOGIC

  • Type: Multiplexer
  • Circuit: 2 x 4:1
  • Independent Circuits: 2
  • Current - Output High, Low: 8mA, 8mA
  • Voltage Supply Source: Single Supply
  • Voltage - Supply: 2 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 16-TSSOPB
패키지: 16-TSSOP (0.173", 4.40mm Width)
재고4,944
TCR2LF08,LM(CT
Toshiba Semiconductor and Storage

200MA LDO VOUT0.8V DROPOUT220MV

  • Output Configuration: -
  • Output Type: -
  • Number of Regulators: -
  • Voltage - Input (Max): -
  • Voltage - Output (Min/Fixed): -
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: -
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: -
  • Protection Features: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고5,792
TCR4DG33,LF
Toshiba Semiconductor and Storage

X34 LDO REGULATORS VOUT: 3.3V IO

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 3.3V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.263V @ 420mA
  • Current - Output: 420mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): -
  • PSRR: 70dB (1kHz)
  • Control Features: Enable
  • Protection Features: Over Current, Over Temperature, Short Circuit
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-XFBGA, CSPBGA
  • Supplier Device Package: 4-WCSPE (0.65x0.65)
패키지: 4-XFBGA, CSPBGA
재고45,516
TCR3UM18A-LF-SE
Toshiba Semiconductor and Storage

LDO REG IOUT: 300MA VIN: 6V VOUT

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 1.8V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.457V @ 300mA
  • Current - Output: 300mA
  • Current - Quiescent (Iq): 680 nA
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: Current Limit, Enable
  • Protection Features: Over Current, Over Temperature
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-UDFN Exposed Pad
  • Supplier Device Package: 4-DFN (1x1)
패키지: -
재고16,707
TCR2EN29-LF-SE
Toshiba Semiconductor and Storage

LDO REG VOUT=2.9V IOUT=200MA

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 2.9V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.21V @ 150mA
  • Current - Output: 200mA
  • Current - Quiescent (Iq): 60 µA
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: Enable
  • Protection Features: Over Current
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-XFDFN Exposed Pad
  • Supplier Device Package: 4-SDFN (0.8x0.8)
패키지: -
재고29,970
TCR2DG26-LF
Toshiba Semiconductor and Storage

LOW DROPOUT (LDO) IOUT: 200MA PD

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 2.6V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.13V @ 100mA
  • Current - Output: 200mA
  • Current - Quiescent (Iq): 70 µA
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: Enable
  • Protection Features: Over Current, Over Temperature
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-UFBGA, WLCSP
  • Supplier Device Package: 4-WCSP (0.79x0.79)
패키지: -
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RN4908-LF-CT
Toshiba Semiconductor and Storage

PNP + NPN BRT Q1BSR10KOHM Q1BER4

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22kOhms
  • Resistor - Emitter Base (R2) (Ohms): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200MHz, 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
패키지: -
재고9,000
TPCC8105-L1Q-CM
Toshiba Semiconductor and Storage

MOSFET P-CH 30V 23A 8TSON

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V
  • Vgs (Max): +20V, -25V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta), 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.8mOhm @ 11.5A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-TSON Advance (3.3x3.3)
  • Package / Case: 8-VDFN Exposed Pad
패키지: -
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