페이지 141 - Toshiba Semiconductor and Storage 제품

부품 번호	제조업체	설명	패키지	재고
TK16G60W,RVQ	Toshiba Semiconductor and Storage	MOSFET N CH 600V 15.8A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.7V @ 790µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 300V Vgs (Max): ±30V FET Feature: Super Junction Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 7.9A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고3,984
2SC5171,Q(J	Toshiba Semiconductor and Storage	TRANS NPN 2A 180V TO220-3 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 180V Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 2W Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	패키지: TO-220-3 Full Pack	재고2,464
2SC4604,F(J	Toshiba Semiconductor and Storage	TRANS NPN 3A 50V TO226-3 Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	패키지: TO-226-3, TO-92-3 Long Body	재고2,480
2SA1837,NSEIKIF(J	Toshiba Semiconductor and Storage	TRANS PNP 1A 230V TO220-3 Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 230V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 2W Frequency - Transition: 70MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	패키지: TO-220-3 Full Pack	재고3,552
2SC4915-O,LF	Toshiba Semiconductor and Storage	TRANS RF NPN 30V 550MHZ SSM Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: 550MHz Noise Figure (dB Typ @ f): 2.3dB ~ 5dB @ 100MHz Gain: 17dB ~ 23dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V Current - Collector (Ic) (Max): 20mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	패키지: SC-75, SOT-416	재고72,000
HN4C51J(TE85L,F)	Toshiba Semiconductor and Storage	TRANS 2NPN 120V 0.1A SMV Transistor Type: 2 NPN (Dual) Common Base Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 300mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	패키지: SC-74A, SOT-753	재고7,856
1SV285TPH3F	Toshiba Semiconductor and Storage	DIODE VARACTOR 10V ESC Capacitance @ Vr, F: 2.35pF @ 4V, 1MHz Capacitance Ratio: 2.3 Capacitance Ratio Condition: C1/C4 Voltage - Peak Reverse (Max): 10V Diode Type: Single Q @ Vr, F: - Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: ESC	패키지: SC-79, SOD-523	재고395,268
HN2S01FUTE85LF	Toshiba Semiconductor and Storage	DIODE ARRAY SCHOTTKY 10V US6 Diode Configuration: 3 Independent Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 10V Current - Average Rectified (Io) (per Diode): 100mA Voltage - Forward (Vf) (Max) @ If: 500mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20µA @ 10V Operating Temperature - Junction: 125°C (Max) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	패키지: 6-TSSOP, SC-88, SOT-363	재고24,810
TCR5AM18,LF	Toshiba Semiconductor and Storage	IC REG LINEAR 500MA 5DFNB Output Configuration: - Output Type: - Number of Regulators: 1 Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 500mA Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 4-XDFN Exposed Pad Supplier Device Package: 5-DFNB (1.2x1.2)	패키지: 4-XDFN Exposed Pad	재고88,992
TCR5AM12,LF	Toshiba Semiconductor and Storage	IC REG LINEAR 500MA 5DFNB Output Configuration: - Output Type: - Number of Regulators: 1 Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 500mA Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 4-XDFN Exposed Pad Supplier Device Package: 5-DFNB (1.2x1.2)	패키지: 4-XDFN Exposed Pad	재고46,620
TCR2LN36,LF	Toshiba Semiconductor and Storage	IC REG LINEAR 3.6V 200MA 4-SDFN Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 3.6V Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 200mA Current - Quiescent (Iq): - Current - Supply (Max): 2µA PSRR: - Control Features: Enable Protection Features: Over Current Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 4-XFDFN Exposed Pad Supplier Device Package: 4-SDFN (0.8x0.8)	패키지: 4-XFDFN Exposed Pad	재고94,782
TB6560AHQ	Toshiba Semiconductor and Storage	IC MOTOR DRIVER PAR 25HZIP Motor Type - Stepper: Bipolar Motor Type - AC, DC: - Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (4) Interface: Parallel Technology: Power MOSFET Step Resolution: 1, 1/2, 1/4, 1/8, 1/16 Applications: General Purpose Current - Output: 3A Voltage - Supply: 4.5 V ~ 5.5 V Voltage - Load: 4.5 V ~ 34 V Operating Temperature: -30°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 25-SIP, Formed Leads Supplier Device Package: 25-HZIP	패키지: 25-SIP, Formed Leads	재고90,780
TB62218AFG,C8,EL	Toshiba Semiconductor and Storage	IC MOTOR DRIVER PAR 28HSOP Motor Type - Stepper: Bipolar Motor Type - AC, DC: - Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (4) Interface: Parallel Technology: DMOS Step Resolution: 1, 1/2, 1/4 Applications: General Purpose Current - Output: 2A Voltage - Supply: 4.75 V ~ 5.25 V Voltage - Load: 10 V ~ 38 V Operating Temperature: -20°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 28-BSOP (0.346", 8.80mm) + 2 Heat Tabs Supplier Device Package: 28-HSOP	패키지: 28-BSOP (0.346", 8.80mm) + 2 Heat Tabs	재고3,440
TB62215AFNG,C8,EL	Toshiba Semiconductor and Storage	IC MOTOR DRIVER PAR 48HTSSOP Motor Type - Stepper: Bipolar Motor Type - AC, DC: - Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (4) Interface: Parallel Technology: Power MOSFET Step Resolution: 1, 1/2, 1/4 Applications: General Purpose Current - Output: 3A Voltage - Supply: 4.75 V ~ 5.25 V Voltage - Load: 10 V ~ 38 V Operating Temperature: -20°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad Supplier Device Package: 48-HTSSOP	패키지: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad	재고6,464
TB62208FTG,8,EL	Toshiba Semiconductor and Storage	IC MOTOR DRIVER PAR 48QFN Motor Type - Stepper: Bipolar Motor Type - AC, DC: - Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (4) Interface: Parallel Technology: DMOS Step Resolution: 1, 1/2 Applications: General Purpose Current - Output: 1.8A Voltage - Supply: 4.5 V ~ 5.5 V Voltage - Load: 10 V ~ 38 V Operating Temperature: -20°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 48-VFQFN Exposed Pad Supplier Device Package: 48-QFN (7x7)	패키지: 48-VFQFN Exposed Pad	재고23,358
THGBMHG8C2LBAIL	Toshiba Semiconductor and Storage	IC FLASH 256GBIT 52MHZ 153WFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 256Gb (32G x 8) Memory Interface: MMC Clock Frequency: 52MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -25°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 153-WFBGA Supplier Device Package: 153-WFBGA (11.5x13)	패키지: 153-WFBGA	재고6,944
TC7MB3257CFT-EL(M)	Toshiba Semiconductor and Storage	IC MUX/DEMUX QUAD 1:2 16-TSSOP Type: Multiplexer/Demultiplexer Circuit: 4 x 2:1 Independent Circuits: 1 Current - Output High, Low: - Voltage Supply Source: Single Supply Voltage - Supply: 4 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 16-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 16-TSSOP	패키지: 16-TSSOP (0.173", 4.40mm Width)	재고2,000
74LCX574FT(AE)	Toshiba Semiconductor and Storage	IC POS TRG D-TYPE SGL 20TSSOP Function: Standard Type: D-Type Output Type: Tri-State, Non-Inverted Number of Elements: 1 Number of Bits per Element: 8 Clock Frequency: 150MHz Max Propagation Delay @ V, Max CL: 8.5ns @ 3.3V, 50pF Trigger Type: Positive Edge Current - Output High, Low: 24mA, 24mA Voltage - Supply: 1.65 V ~ 3.6 V Current - Quiescent (Iq): 10µA Input Capacitance: 7pF Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 20-TSSOP (0.173", 4.40mm Width)	패키지: 20-TSSOP (0.173", 4.40mm Width)	재고5,040
TC7W125FUTE12LF	Toshiba Semiconductor and Storage	IC BUS BUFFER DUAL N-INV SM8 Logic Type: Buffer, Non-Inverting Number of Elements: 2 Number of Bits per Element: 1 Input Type: - Output Type: Push-Pull Current - Output High, Low: 7.8mA, 7.8mA Voltage - Supply: 2 V ~ 6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width) Supplier Device Package: SM8	패키지: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)	재고216,000
TC74VCX541FTEL	Toshiba Semiconductor and Storage	IC BUFF NON-INVERT 3.6V 20TSSOP Logic Type: Buffer, Non-Inverting Number of Elements: 1 Number of Bits per Element: 8 Input Type: - Output Type: Push-Pull Current - Output High, Low: 24mA, 24mA Voltage - Supply: 1.2 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 20-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 20-TSSOP	패키지: 20-TSSOP (0.173", 4.40mm Width)	재고29,268
TLP290-4(GB,E)	Toshiba Semiconductor and Storage	OPTOISOLTR 2.5KV 4CH TRANS 16-SO Number of Channels: 4 Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 100% @ 5mA Current Transfer Ratio (Max): 400% @ 5mA Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Input Type: AC, DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.2V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 400mV Operating Temperature: -55°C ~ 110°C Mounting Type: Surface Mount Package / Case: 16-SOIC (0.179", 4.55mm Width) Supplier Device Package: 16-SO	패키지: 16-SOIC (0.179", 4.55mm Width)	재고3,150
TLP2166A(F)	Toshiba Semiconductor and Storage	OPTOISO 2.5KV 2CH PUSH PULL 8SO Number of Channels: 2 Inputs - Side 1/Side 2: 2/0 Voltage - Isolation: 2500Vrms Common Mode Transient Immunity (Min): 15kV/µs Input Type: DC Output Type: Push-Pull, Totem Pole Current - Output / Channel: 10mA Data Rate: 15MBd Propagation Delay tpLH / tpHL (Max): 75ns, 75ns Rise / Fall Time (Typ): 5ns, 5ns Voltage - Forward (Vf) (Typ): 1.65V Current - DC Forward (If) (Max): 15mA Voltage - Supply: 3 V ~ 3.63 V Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고8,262
TCK402G,LF	Toshiba Semiconductor and Storage	X34 LOAD SWITCH IC VIN:2.7-28V O Switch Type: - Number of Outputs: - Ratio - Input:Output: - Output Configuration: - Output Type: - Interface: - Voltage - Load: - Voltage - Supply (Vcc/Vdd): - Current - Output (Max): - Rds On (Typ): - Input Type: - Features: - Fault Protection: - Operating Temperature: - Package / Case: 6-UFBGA, WLCSP Supplier Device Package: 6-WCSP (1.2x0.80)	패키지: 6-UFBGA, WLCSP	재고105,270
RN2117-TE85L-F	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 50V 0.1A SSM Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 10 kOhms Resistor - Emitter Base (R2) (Ohms): 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200 MHz Power - Max: 100 mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	패키지: -	재고390
CMH07-TE12L-Q-M	Toshiba Semiconductor and Storage	DIODE GEN PURP 200V 2A M-FLAT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: -40°C ~ 150°C	패키지: -	재고3,903
TRS4V65H-LQ	Toshiba Semiconductor and Storage	G3 SIC-SBD 650V 4A DFN8X8 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 4 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 55 µA @ 650 V Capacitance @ Vr, F: 263pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 4-VSFN Exposed Pad Supplier Device Package: 4-DFN-EP (8x8) Operating Temperature - Junction: 175°C	패키지: -	재고14,961
RN4981-LXHF-CT	Toshiba Semiconductor and Storage	AUTO AEC-Q NPN + PNP BRT, Q1BSR= Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7kOhms Resistor - Emitter Base (R2) (Ohms): 4.7kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz, 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	패키지: -	재고18,000
RN1910-LXHF-CT	Toshiba Semiconductor and Storage	AUTO AEC-Q 2-IN-1 (POINT-SYM) NP Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	패키지: -	재고9,000

TK16G60W,RVQ

Toshiba Semiconductor and Storage

MOSFET N CH 600V 15.8A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.7V @ 790µA
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 300V
Vgs (Max): ±30V
FET Feature: Super Junction
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 190 mOhm @ 7.9A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고3,984

2SC5171,Q(J

Toshiba Semiconductor and Storage

TRANS NPN 2A 180V TO220-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 180V
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Power - Max: 2W
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220NIS

패키지: TO-220-3 Full Pack

재고2,464

2SC4604,F(J

Toshiba Semiconductor and Storage

TRANS NPN 3A 50V TO226-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Power - Max: 900mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

패키지: TO-226-3, TO-92-3 Long Body

재고2,480

2SA1837,NSEIKIF(J

Toshiba Semiconductor and Storage

TRANS PNP 1A 230V TO220-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 230V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Power - Max: 2W
Frequency - Transition: 70MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220NIS

패키지: TO-220-3 Full Pack

재고3,552

2SC4915-O,LF

Toshiba Semiconductor and Storage

TRANS RF NPN 30V 550MHZ SSM

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: 550MHz
Noise Figure (dB Typ @ f): 2.3dB ~ 5dB @ 100MHz
Gain: 17dB ~ 23dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V
Current - Collector (Ic) (Max): 20mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM

패키지: SC-75, SOT-416

재고72,000

HN4C51J(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2NPN 120V 0.1A SMV

Transistor Type: 2 NPN (Dual) Common Base
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Power - Max: 300mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: SMV

패키지: SC-74A, SOT-753

재고7,856

1SV285TPH3F

Toshiba Semiconductor and Storage

DIODE VARACTOR 10V ESC

Capacitance @ Vr, F: 2.35pF @ 4V, 1MHz
Capacitance Ratio: 2.3
Capacitance Ratio Condition: C1/C4
Voltage - Peak Reverse (Max): 10V
Diode Type: Single
Q @ Vr, F: -
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: ESC

패키지: SC-79, SOD-523

재고395,268

HN2S01FUTE85LF

Toshiba Semiconductor and Storage

DIODE ARRAY SCHOTTKY 10V US6

Diode Configuration: 3 Independent
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 10V
Current - Average Rectified (Io) (per Diode): 100mA
Voltage - Forward (Vf) (Max) @ If: 500mV @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 20µA @ 10V
Operating Temperature - Junction: 125°C (Max)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

패키지: 6-TSSOP, SC-88, SOT-363

재고24,810

TCR5AM18,LF

Toshiba Semiconductor and Storage

IC REG LINEAR 500MA 5DFNB

Output Configuration: -
Output Type: -
Number of Regulators: 1
Voltage - Input (Max): -
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 500mA
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: -
Control Features: -
Protection Features: -
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 4-XDFN Exposed Pad
Supplier Device Package: 5-DFNB (1.2x1.2)

패키지: 4-XDFN Exposed Pad

재고88,992

TCR5AM12,LF

Toshiba Semiconductor and Storage

IC REG LINEAR 500MA 5DFNB

Output Configuration: -
Output Type: -
Number of Regulators: 1
Voltage - Input (Max): -
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 500mA
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: -
Control Features: -
Protection Features: -
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 4-XDFN Exposed Pad
Supplier Device Package: 5-DFNB (1.2x1.2)

패키지: 4-XDFN Exposed Pad

재고46,620

TCR2LN36,LF

Toshiba Semiconductor and Storage

IC REG LINEAR 3.6V 200MA 4-SDFN

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 3.6V
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 200mA
Current - Quiescent (Iq): -
Current - Supply (Max): 2µA
PSRR: -
Control Features: Enable
Protection Features: Over Current
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 4-XFDFN Exposed Pad
Supplier Device Package: 4-SDFN (0.8x0.8)

패키지: 4-XFDFN Exposed Pad

재고94,782

TB6560AHQ

Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 25HZIP

Motor Type - Stepper: Bipolar
Motor Type - AC, DC: -
Function: Driver - Fully Integrated, Control and Power Stage
Output Configuration: Half Bridge (4)
Interface: Parallel
Technology: Power MOSFET
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16
Applications: General Purpose
Current - Output: 3A
Voltage - Supply: 4.5 V ~ 5.5 V
Voltage - Load: 4.5 V ~ 34 V
Operating Temperature: -30°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 25-SIP, Formed Leads
Supplier Device Package: 25-HZIP

패키지: 25-SIP, Formed Leads

재고90,780

TB62218AFG,C8,EL

Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 28HSOP

Motor Type - Stepper: Bipolar
Motor Type - AC, DC: -
Function: Driver - Fully Integrated, Control and Power Stage
Output Configuration: Half Bridge (4)
Interface: Parallel
Technology: DMOS
Step Resolution: 1, 1/2, 1/4
Applications: General Purpose
Current - Output: 2A
Voltage - Supply: 4.75 V ~ 5.25 V
Voltage - Load: 10 V ~ 38 V
Operating Temperature: -20°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 28-BSOP (0.346", 8.80mm) + 2 Heat Tabs
Supplier Device Package: 28-HSOP

패키지: 28-BSOP (0.346", 8.80mm) + 2 Heat Tabs

재고3,440

TB62215AFNG,C8,EL

Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 48HTSSOP

Motor Type - Stepper: Bipolar
Motor Type - AC, DC: -
Function: Driver - Fully Integrated, Control and Power Stage
Output Configuration: Half Bridge (4)
Interface: Parallel
Technology: Power MOSFET
Step Resolution: 1, 1/2, 1/4
Applications: General Purpose
Current - Output: 3A
Voltage - Supply: 4.75 V ~ 5.25 V
Voltage - Load: 10 V ~ 38 V
Operating Temperature: -20°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad
Supplier Device Package: 48-HTSSOP

패키지: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad

재고6,464

TB62208FTG,8,EL

Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 48QFN

Motor Type - Stepper: Bipolar
Motor Type - AC, DC: -
Function: Driver - Fully Integrated, Control and Power Stage
Output Configuration: Half Bridge (4)
Interface: Parallel
Technology: DMOS
Step Resolution: 1, 1/2
Applications: General Purpose
Current - Output: 1.8A
Voltage - Supply: 4.5 V ~ 5.5 V
Voltage - Load: 10 V ~ 38 V
Operating Temperature: -20°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Supplier Device Package: 48-QFN (7x7)

패키지: 48-VFQFN Exposed Pad

재고23,358

THGBMHG8C2LBAIL

Toshiba Semiconductor and Storage

IC FLASH 256GBIT 52MHZ 153WFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 256Gb (32G x 8)
Memory Interface: MMC
Clock Frequency: 52MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 153-WFBGA
Supplier Device Package: 153-WFBGA (11.5x13)

패키지: 153-WFBGA

재고6,944

TC7MB3257CFT-EL(M)

Toshiba Semiconductor and Storage

IC MUX/DEMUX QUAD 1:2 16-TSSOP

Type: Multiplexer/Demultiplexer
Circuit: 4 x 2:1
Independent Circuits: 1
Current - Output High, Low: -
Voltage Supply Source: Single Supply
Voltage - Supply: 4 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 16-TSSOP

패키지: 16-TSSOP (0.173", 4.40mm Width)

재고2,000

74LCX574FT(AE)

Toshiba Semiconductor and Storage

IC POS TRG D-TYPE SGL 20TSSOP

Function: Standard
Type: D-Type
Output Type: Tri-State, Non-Inverted
Number of Elements: 1
Number of Bits per Element: 8
Clock Frequency: 150MHz
Max Propagation Delay @ V, Max CL: 8.5ns @ 3.3V, 50pF
Trigger Type: Positive Edge
Current - Output High, Low: 24mA, 24mA
Voltage - Supply: 1.65 V ~ 3.6 V
Current - Quiescent (Iq): 10µA
Input Capacitance: 7pF
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-TSSOP (0.173", 4.40mm Width)

패키지: 20-TSSOP (0.173", 4.40mm Width)

재고5,040

TC7W125FUTE12LF

Toshiba Semiconductor and Storage

IC BUS BUFFER DUAL N-INV SM8

Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Number of Bits per Element: 1
Input Type: -
Output Type: Push-Pull
Current - Output High, Low: 7.8mA, 7.8mA
Voltage - Supply: 2 V ~ 6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Supplier Device Package: SM8

패키지: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)

재고216,000

TC74VCX541FTEL

Toshiba Semiconductor and Storage

IC BUFF NON-INVERT 3.6V 20TSSOP

Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Number of Bits per Element: 8
Input Type: -
Output Type: Push-Pull
Current - Output High, Low: 24mA, 24mA
Voltage - Supply: 1.2 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 20-TSSOP

패키지: 20-TSSOP (0.173", 4.40mm Width)

재고29,268

TLP290-4(GB,E)

Toshiba Semiconductor and Storage

OPTOISOLTR 2.5KV 4CH TRANS 16-SO

Number of Channels: 4
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Current Transfer Ratio (Max): 400% @ 5mA
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Input Type: AC, DC
Output Type: Transistor
Voltage - Output (Max): 80V
Current - Output / Channel: 50mA
Voltage - Forward (Vf) (Typ): 1.2V
Current - DC Forward (If) (Max): 50mA
Vce Saturation (Max): 400mV
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Supplier Device Package: 16-SO

패키지: 16-SOIC (0.179", 4.55mm Width)

재고3,150

TLP2166A(F)

Toshiba Semiconductor and Storage

OPTOISO 2.5KV 2CH PUSH PULL 8SO

Number of Channels: 2
Inputs - Side 1/Side 2: 2/0
Voltage - Isolation: 2500Vrms
Common Mode Transient Immunity (Min): 15kV/µs
Input Type: DC
Output Type: Push-Pull, Totem Pole
Current - Output / Channel: 10mA
Data Rate: 15MBd
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Rise / Fall Time (Typ): 5ns, 5ns
Voltage - Forward (Vf) (Typ): 1.65V
Current - DC Forward (If) (Max): 15mA
Voltage - Supply: 3 V ~ 3.63 V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고8,262

TCK402G,LF

Toshiba Semiconductor and Storage

X34 LOAD SWITCH IC VIN:2.7-28V O

Switch Type: -
Number of Outputs: -
Ratio - Input:Output: -
Output Configuration: -
Output Type: -
Interface: -
Voltage - Load: -
Voltage - Supply (Vcc/Vdd): -
Current - Output (Max): -
Rds On (Typ): -
Input Type: -
Features: -
Fault Protection: -
Operating Temperature: -
Package / Case: 6-UFBGA, WLCSP
Supplier Device Package: 6-WCSP (1.2x0.80)

패키지: 6-UFBGA, WLCSP

재고105,270

RN2117-TE85L-F

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SSM

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 10 kOhms
Resistor - Emitter Base (R2) (Ohms): 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM

패키지: -

재고390

CMH07-TE12L-Q-M

Toshiba Semiconductor and Storage

DIODE GEN PURP 200V 2A M-FLAT

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C

패키지: -

재고3,903

TRS4V65H-LQ

Toshiba Semiconductor and Storage

G3 SIC-SBD 650V 4A DFN8X8

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 4 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 55 µA @ 650 V
Capacitance @ Vr, F: 263pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: 4-VSFN Exposed Pad
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C

패키지: -

재고14,961

RN4981-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q NPN + PNP BRT, Q1BSR=

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7kOhms
Resistor - Emitter Base (R2) (Ohms): 4.7kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz, 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

패키지: -

재고18,000

RN1910-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYM) NP

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

패키지: -

재고9,000