페이지 18 - Toshiba Semiconductor and Storage 제품 | Heisener Electronics
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Toshiba Semiconductor and Storage 제품

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2SK2962,T6WNLF(J
Toshiba Semiconductor and Storage

MOSFET N-CH

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92MOD
  • Package / Case: TO-226-3, TO-92-3 Long Body
패키지: TO-226-3, TO-92-3 Long Body
재고7,456
TK13A65U(STA4,Q,M)
Toshiba Semiconductor and Storage

MOSFET N-CH 650V 13A TO-220SIS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 380 mOhm @ 6.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
패키지: TO-220-3 Full Pack
재고14,328
TPH6400ENH,L1Q
Toshiba Semiconductor and Storage

MOSFET N-CH 200V 21A 8-SOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 300µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta), 57W (Tc)
  • Rds On (Max) @ Id, Vgs: 64 mOhm @ 6.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5)
  • Package / Case: 8-PowerVDFN
패키지: 8-PowerVDFN
재고4,912
2SC1627A-O,PASF(M
Toshiba Semiconductor and Storage

TRANS NPN 400MA 80V TO226-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 400mA
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 200A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 2V
  • Power - Max: 800mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
패키지: TO-226-3, TO-92-3 Long Body
재고2,768
RN1309(TE85L,F)
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.1W USM

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 22k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: USM
패키지: SC-70, SOT-323
재고5,920
RN2507(TE85L,F)
Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.3W SMV

  • Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: SMV
패키지: SC-74A, SOT-753
재고6,656
TA48L025F(TE12L,F)
Toshiba Semiconductor and Storage

IC REG LINEAR 2.5V 150MA PWMINI

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 16V
  • Voltage - Output (Min/Fixed): 2.5V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.5V @ 100mA
  • Current - Output: 150mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 800µA ~ 5mA
  • PSRR: 70dB (120Hz)
  • Control Features: -
  • Protection Features: Over Current, Over Temperature
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: PW-MINI (SOT-89)
패키지: TO-243AA
재고6,656
TA48S09AF(T6L1,Q)
Toshiba Semiconductor and Storage

IC REG LINEAR 9V 1A 5HSIP

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 16V
  • Voltage - Output (Min/Fixed): 9V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.69V @ 1A (Typ)
  • Current - Output: 1A
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 1.7mA ~ 20mA
  • PSRR: 55dB (120Hz)
  • Control Features: Enable
  • Protection Features: Over Current, Over Temperature
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-6, DPak (5 Leads + Tab)
  • Supplier Device Package: 5-HSIP
패키지: TO-252-6, DPak (5 Leads + Tab)
재고18,276
TB6552FTG,8,EL
Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 16WQFN

  • Motor Type - Stepper: -
  • Motor Type - AC, DC: Brushed DC
  • Function: Driver - Fully Integrated, Control and Power Stage
  • Output Configuration: Half Bridge (4)
  • Interface: PWM, Serial
  • Technology: Power MOSFET
  • Step Resolution: -
  • Applications: General Purpose
  • Current - Output: 800mA
  • Voltage - Supply: 2.7 V ~ 5.5 V
  • Voltage - Load: 2.5 V ~ 13.5 V
  • Operating Temperature: -20°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-WFQFN Exposed Pad
  • Supplier Device Package: 16-WQFN (3x3)
패키지: 16-WFQFN Exposed Pad
재고7,376
TH58BVG3S0HTA00
Toshiba Semiconductor and Storage

IC EEPROM 4GBIT 25NS 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM - NAND
  • Memory Size: 8Gb (1G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 25ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP I
패키지: 48-TFSOP (0.724", 18.40mm Width)
재고3,680
TC74VCX157FTEL
Toshiba Semiconductor and Storage

IC MULTIPLEXER 1 X 2:1 16TSSOP

  • Type: Multiplexer
  • Circuit: 1 x 2:1
  • Independent Circuits: 4
  • Current - Output High, Low: 24mA, 24mA
  • Voltage Supply Source: Single Supply
  • Voltage - Supply: 1.2 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 16-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 16-TSSOP
패키지: 16-TSSOP (0.173", 4.40mm Width)
재고23,820
TC7WZ00FK,LJ(CT
Toshiba Semiconductor and Storage

IC GATE NAND DUAL 2 IN US8

  • Logic Type: NAND Gate
  • Number of Circuits: 2
  • Number of Inputs: 2
  • Features: -
  • Voltage - Supply: 1.65 V ~ 5.5 V
  • Current - Quiescent (Max): 10µA
  • Current - Output High, Low: 32mA, 32mA
  • Logic Level - Low: -
  • Logic Level - High: -
  • Max Propagation Delay @ V, Max CL: 3.6ns @ 5V, 50pF
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: US8
  • Package / Case: 8-VFSOP (0.091", 2.30mm Width)
패키지: 8-VFSOP (0.091", 2.30mm Width)
재고28,248
TC74HC574APF
Toshiba Semiconductor and Storage

IC D-TYPE POS TRG SNGL 20DIP

  • Function: Standard
  • Type: D-Type
  • Output Type: Tri-State, Non-Inverted
  • Number of Elements: 1
  • Number of Bits per Element: 8
  • Clock Frequency: 59MHz
  • Max Propagation Delay @ V, Max CL: 33ns @ 6V, 150pF
  • Trigger Type: Positive Edge
  • Current - Output High, Low: 7.8mA, 7.8mA
  • Voltage - Supply: 2 V ~ 6 V
  • Current - Quiescent (Iq): 4µA
  • Input Capacitance: 5pF
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 20-DIP (0.300", 7.62mm)
패키지: 20-DIP (0.300", 7.62mm)
재고17,286
TC74VHC4040F(E,K,F
Toshiba Semiconductor and Storage

IC COUNTER BIN 12 STAGE 16SOP

  • Logic Type: Binary Counter
  • Direction: Up
  • Number of Elements: 1
  • Number of Bits per Element: 12
  • Reset: Asynchronous
  • Timing: -
  • Count Rate: 125MHz
  • Trigger Type: Negative Edge
  • Voltage - Supply: 2 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.209", 5.30mm Width)
  • Supplier Device Package: 16-SOP
패키지: 16-SOIC (0.209", 5.30mm Width)
재고18,606
DF5A6.2FU(TE85L,F)
Toshiba Semiconductor and Storage

TVS DIODE 3VWM USV

  • Type: Zener
  • Unidirectional Channels: 4
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 3V
  • Voltage - Breakdown (Min): 5.8V
  • Voltage - Clamping (Max) @ Ipp: -
  • Current - Peak Pulse (10/1000µs): -
  • Power - Peak Pulse: -
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: 55pF @ 1MHz
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 5-TSSOP, SC-70-5, SOT-353
  • Supplier Device Package: USV
패키지: 5-TSSOP, SC-70-5, SOT-353
재고27,216
DF5A5.6FUTE85LF
Toshiba Semiconductor and Storage

TVS DIODE 2.5VWM USV

  • Type: Zener
  • Unidirectional Channels: 4
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 2.5V
  • Voltage - Breakdown (Min): 5.3V
  • Voltage - Clamping (Max) @ Ipp: -
  • Current - Peak Pulse (10/1000µs): -
  • Power - Peak Pulse: -
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: 65pF @ 1MHz
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 5-TSSOP, SC-70-5, SOT-353
  • Supplier Device Package: USV
패키지: 5-TSSOP, SC-70-5, SOT-353
재고27,054
TLP3043(S,C,F)
Toshiba Semiconductor and Storage

OPTOISOLATOR 5KV TRIAC 6DIP 5L

  • Output Type: Triac
  • Zero Crossing Circuit: Yes
  • Number of Channels: 1
  • Voltage - Isolation: 5000Vrms
  • Voltage - Off State: 400V
  • Static dV/dt (Min): 200V/µs
  • Current - LED Trigger (Ift) (Max): 5mA
  • Current - On State (It (RMS)) (Max): 100mA
  • Current - Hold (Ih): 600µA (Typ)
  • Turn On Time: -
  • Voltage - Forward (Vf) (Typ): 1.15V
  • Current - DC Forward (If) (Max): 50mA
  • Operating Temperature: -40°C ~ 100°C
  • Mounting Type: Through Hole
  • Package / Case: 6-DIP (0.300", 7.62mm), 5 Leads
  • Supplier Device Package: 6-DIP (Cut), 5 Lead
  • Approvals: BSI, SEMKO, UR
패키지: 6-DIP (0.300", 7.62mm), 5 Leads
재고15,888
TC7WPB9306FK,LF(CT
Toshiba Semiconductor and Storage

X34 PB-F CMOS BUS SWITCHES (DUAL

  • Type: Bus Bar - Central
  • Circuit: 2 x 1:1
  • Independent Circuits: 1
  • Current - Output High, Low: -
  • Voltage Supply Source: Dual Supply
  • Voltage - Supply: 1.65 V ~ 5 V, 2.3 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-VFSOP (0.091", 2.30mm Width)
  • Supplier Device Package: US8
패키지: 8-VFSOP (0.091", 2.30mm Width)
재고23,550
TBD62381AFNG,EL
Toshiba Semiconductor and Storage

TRANSISTOR ARRAY INTERFACE DRIVE

  • Switch Type: General Purpose
  • Number of Outputs: 8
  • Ratio - Input:Output: 8:8
  • Output Configuration: High Side
  • Output Type: N-Channel
  • Interface: -
  • Voltage - Load: 0 ~ 50 V
  • Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
  • Current - Output (Max): 500mA
  • Rds On (Typ): 1 Ohm
  • Input Type: Inverting
  • Features: -
  • Fault Protection: -
  • Operating Temperature: -40°C ~ 85°C
  • Package / Case: 18-LSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 18-SSOP
패키지: 18-LSOP (0.173", 4.40mm Width)
재고33,396
TCR3UG33A,LF
Toshiba Semiconductor and Storage

IC REG LIN 3.3V 300MA 4WCSP-F

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 3.3V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.273V @ 300mA
  • Current - Output: 300mA
  • Current - Quiescent (Iq): 680nA
  • Current - Supply (Max): -
  • PSRR: 70dB (1kHz)
  • Control Features: Enable
  • Protection Features: Inrush Current, Over Current, Thermal Shutdown
  • Operating Temperature: -40°C ~ 85°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-XFBGA, WLCSP
  • Supplier Device Package: 4-WCSP-F (0.65x0.65)
패키지: 4-XFBGA, WLCSP
재고5,856
TC7MPB9326FK(EL)
Toshiba Semiconductor and Storage

X34 DUAL-SUPPLY LEVEL SHIFT SPDT

  • Type: Bus Switch
  • Circuit: 2 x 1:2
  • Independent Circuits: 1
  • Current - Output High, Low: -
  • Voltage Supply Source: Dual Supply
  • Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 14-VFSOP (0.118", 3.00mm Width)
  • Supplier Device Package: 14-VSSOP
패키지: 14-VFSOP (0.118", 3.00mm Width)
재고23,514
TJ90S04M3L-LXHQ
Toshiba Semiconductor and Storage

MOSFET P-CH 40V 90A DPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 10 V
  • Vgs (Max): +10V, -20V
  • FET Feature: -
  • Power Dissipation (Max): 180W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.3mOhm @ 45A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK+
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
패키지: -
재고19,155
TAR5S25U-TE85L-F
Toshiba Semiconductor and Storage

UFV POINT DDRULATOR (LF) VOUT: 2

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 15V
  • Voltage - Output (Min/Fixed): 2.5V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.2V @ 50mA
  • Current - Output: 200mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 850 µA
  • PSRR: 70dB (1kHz)
  • Control Features: Enable
  • Protection Features: Over Current, Over Temperature
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD (5 Leads), Flat Lead
  • Supplier Device Package: UFV
패키지: -
재고8,970
TB67H450AFNG-EL
Toshiba Semiconductor and Storage

IC BRUSHED MOTOR DRVR 8TSSOP

  • Motor Type - Stepper: Bipolar
  • Motor Type - AC, DC: Brushed DC
  • Function: Driver - Fully Integrated, Control and Power Stage
  • Output Configuration: Half Bridge
  • Interface: -
  • Technology: Power MOSFET
  • Step Resolution: -
  • Applications: General Purpose
  • Current - Output: 3A
  • Voltage - Supply: 4.5V ~ 44V
  • Voltage - Load: 4.5V ~ 44V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-HSOP
패키지: -
재고95,028
TB67S580FNG-EL
Toshiba Semiconductor and Storage

STEPPING MOTOR CONTROL DRIVER IC

  • Motor Type - Stepper: Bipolar
  • Motor Type - AC, DC: -
  • Function: Driver - Fully Integrated, Control and Power Stage
  • Output Configuration: Half Bridge (4)
  • Interface: On/Off
  • Technology: DMOS
  • Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
  • Applications: General Purpose
  • Current - Output: 1.6A
  • Voltage - Supply: 8.2V ~ 44V
  • Voltage - Load: 8.2V ~ 44V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad
  • Supplier Device Package: 28-HTSSOP
패키지: -
재고11,994
2SA1162-GR-LXHF
Toshiba Semiconductor and Storage

TRANS PNP 50V 0.15A SMINI

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 150 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
  • Power - Max: 200 mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
패키지: -
재고59,946
TK200F04N1L-LXGQ
Toshiba Semiconductor and Storage

MOSFET N-CH 40V 200A TO220SM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 214 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 14920 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 375W (Tc)
  • Rds On (Max) @ Id, Vgs: 0.9mOhm @ 100A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-220SM(W)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
패키지: -
재고3,000
SSM3K361TU-LF
Toshiba Semiconductor and Storage

MOSFET N-CH 100V 3.5A UFM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: UFM
  • Package / Case: 3-SMD, Flat Lead
패키지: -
재고10,956