Toshiba Semiconductor and Storage 제품

TPC8038-H(TE12L,Q)

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 12A SOP8 2-6J1B

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 10V
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 11.4 mOhm @ 6A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOP (5.5x6.0)
• Package / Case: 8-SOIC (0.173", 4.40mm Width)

패키지: 8-SOIC (0.173", 4.40mm Width)

TK8R2A06PL,S4X

Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 50A
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 300µA
• Gate Charge (Qg) (Max) @ Vgs: 28.4nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 36W (Tc)
• Rds On (Max) @ Id, Vgs: 11.4 mOhm @ 8A, 4.5V
• Operating Temperature: 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-220SIS
• Package / Case: TO-220-3 Full Pack

패키지: TO-220-3 Full Pack

SSM3J351R,LF

Toshiba Semiconductor and Storage

MOSFET P-CH 60V 3.5A SOT-23F

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: 2V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 15.1nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V
• Vgs (Max): +10V, -20V
• FET Feature: -
• Power Dissipation (Max): 2W (Ta)
• Rds On (Max) @ Id, Vgs: 134 mOhm @ 1A, 10V
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23F
• Package / Case: SOT-23-3 Flat Leads

패키지: SOT-23-3 Flat Leads

TPCL4203(TE85L,F)

Toshiba Semiconductor and Storage

MOSFET 2N-CH 4CHIPLGA

• FET Type: 2 N-Channel (Half Bridge)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Rds On (Max) @ Id, Vgs: -
• Vgs(th) (Max) @ Id: 1.2V @ 200µA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 685pF @ 10V
• Power - Max: 500mW
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-XLGA
• Supplier Device Package: 4-Chip LGA

패키지: 4-XLGA

2SC3668-Y,F2PANF(J

Toshiba Semiconductor and Storage

TRANS NPN 2A 50V SC71

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 2A
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
• Current - Collector Cutoff (Max): 1µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
• Power - Max: 1W
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: SC-71
• Supplier Device Package: MSTM

패키지: SC-71

RN2904(T5L,F,T)

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.2W US6

• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 47k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 200MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: US6

패키지: 6-TSSOP, SC-88, SOT-363

CLH07(TE16L,NMB,Q)

Toshiba Semiconductor and Storage

DIODE GEN PURP 400V 5A L-FLAT

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 5A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Current - Reverse Leakage @ Vr: 10µA @ 400V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: L-FLAT?
• Supplier Device Package: L-FLAT? (4x5.5)
• Operating Temperature - Junction: -40°C ~ 150°C

패키지: L-FLAT?

TA76431AS,T6MURF(J

Toshiba Semiconductor and Storage

IC REG LINEAR 100MA LSTM

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 100mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: LSTM

패키지: TO-226-3, TO-92-3 Long Body

TCR3DG10,LF

Toshiba Semiconductor and Storage

IC REG LINEAR 300MA 4WCSPE

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 300mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 4-XFBGA, CSPBGA
• Supplier Device Package: 4-WCSPE (0.65x0.65)

패키지: 4-XFBGA, CSPBGA

TC62D723FNG,C,EL

Toshiba Semiconductor and Storage

IC LED DRIVER LIN 90MA 24HTSSOP

• Type: Linear
• Topology: Shift Register
• Internal Switch(s): Yes
• Number of Outputs: 16
• Voltage - Supply (Min): 3V
• Voltage - Supply (Max): 5.5V
• Voltage - Output: 17V
• Current - Output / Channel: 90mA
• Frequency: -
• Dimming: -
• Applications: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-TSSOP (0.173", 4.40mm Width) Exposed Pad
• Supplier Device Package: 24-HTSSOP

패키지: 24-TSSOP (0.173", 4.40mm Width) Exposed Pad

TC4S11FT5LFT

Toshiba Semiconductor and Storage

IC GATE NAND 1CH 2-INP SMV

• Logic Type: NAND Gate
• Number of Circuits: 1
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 3 V ~ 18 V
• Current - Quiescent (Max): 1µA
• Current - Output High, Low: 3.4mA, 3.4mA
• Logic Level - Low: 1.5 V ~ 4 V
• Logic Level - High: 3.5 V ~ 11 V
• Max Propagation Delay @ V, Max CL: 80ns @ 15V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: SMV
• Package / Case: SC-74A, SOT-753

패키지: SC-74A, SOT-753

74LCX08FT(AE)

Toshiba Semiconductor and Storage

IC GATE AND 4CH 2-INP 14TSSOP

• Logic Type: AND Gate
• Number of Circuits: 4
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 1.65 V ~ 3.6 V
• Current - Quiescent (Max): 10µA
• Current - Output High, Low: 24mA, 24mA
• Logic Level - Low: 0.7 V ~ 0.8 V
• Logic Level - High: 1.7 V ~ 2 V
• Max Propagation Delay @ V, Max CL: 5.5ns @ 3.3V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: 14-TSSOP
• Package / Case: 14-TSSOP (0.173", 4.40mm Width)

패키지: 14-TSSOP (0.173", 4.40mm Width)

TC7WT241FUTE12LF

Toshiba Semiconductor and Storage

IC BUS BUFFER TRI-ST N-INV SM8

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 2
• Number of Bits per Element: 1
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 6mA, 6mA
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
• Supplier Device Package: SM8

패키지: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)

TD62064AFG,S

Toshiba Semiconductor and Storage

IC DVR DARL SINK TTL 4CH 16HSOP

• Type: Driver
• Protocol: RS232
• Number of Drivers/Receivers: 4/0
• Duplex: -
• Receiver Hysteresis: -
• Data Rate: -
• Voltage - Supply: 5V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs
• Supplier Device Package: 16-HSOP

패키지: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs

TL1L2-WH1,L

Toshiba Semiconductor and Storage

LED LETERAS NEU WHITE 4000K 2SMD

• Color: White, Neutral
• CCT (K): 4000K
• Flux @ 85°C, Current - Test: -
• Flux @ 25°C, Current - Test: 120 lm (105 lm ~ 135 lm)
• Current - Test: 350mA
• Voltage - Forward (Vf) (Typ): 2.85V
• Lumens/Watt @ Current - Test: 120 lm/W
• CRI (Color Rendering Index): 80
• Current - Max: 1A
• Viewing Angle: 120°
• Mounting Type: Surface Mount
• Package / Case: 1414 (3535 Metric)
• Supplier Device Package: 3535
• Size / Dimension: 0.138" L x 0.138" W (3.50mm x 3.50mm)
• Height - Seated (Max): 0.080" (2.03mm)

패키지: 1414 (3535 Metric)

DF2S12FS,L3M

Toshiba Semiconductor and Storage

TVS DIODE 9VWM 18.5VC

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 9V (Max)
• Voltage - Breakdown (Min): 11.4V
• Voltage - Clamping (Max) @ Ipp: 18.5V
• Current - Peak Pulse (10/1000µs): 1A (8/20µs)
• Power - Peak Pulse: -
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 15pF @ 1MHz
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: SOD-923
• Supplier Device Package: SOD-923

패키지: SOD-923

TLP3475(TP,F

Toshiba Semiconductor and Storage

PHOTORELAY SPST-NO 300MA 50V

• Circuit: SPST-NO (1 Form A)
• Output Type: AC, DC
• On-State Resistance (Max): 1.5 Ohm
• Load Current: 300mA
• Voltage - Input: 1.27VDC
• Voltage - Load: 0 ~ 50 V
• Mounting Type: Surface Mount
• Termination Style: SMD (SMT) Tab
• Package / Case: 4-SMD (0.096", 2.45mm)
• Supplier Device Package: 4-VSON
• Relay Type: Relay

패키지: 4-SMD (0.096", 2.45mm)

TLP719(F)

Toshiba Semiconductor and Storage

OPTOISOLATOR 5KV TRANS 6-SDIP GW

• Number of Channels: 1
• Voltage - Isolation: 5000Vrms
• Current Transfer Ratio (Min): 20% @ 16mA
• Current Transfer Ratio (Max): -
• Turn On / Turn Off Time (Typ): 800ns, 800ns (Max)
• Rise / Fall Time (Typ): -
• Input Type: DC
• Output Type: Transistor
• Voltage - Output (Max): 20V
• Current - Output / Channel: 8mA
• Voltage - Forward (Vf) (Typ): 1.65V
• Current - DC Forward (If) (Max): 25mA
• Vce Saturation (Max): -
• Operating Temperature: -55°C ~ 100°C
• Mounting Type: Surface Mount
• Package / Case: 6-SOIC (0.268", 6.80mm Width)
• Supplier Device Package: 6-SDIP Gull Wing

패키지: 6-SOIC (0.268", 6.80mm Width)

74LCX573FT

Toshiba Semiconductor and Storage

IC LATCH OCTAL D-TYPE 20-TSSOP

• Logic Type: D-Type Transparent Latch
• Circuit: 8:8
• Output Type: Tri-State
• Voltage - Supply: 1.65 V ~ 3.6 V
• Independent Circuits: 1
• Delay Time - Propagation: 1.5ns
• Current - Output High, Low: 24mA, 24mA
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 20-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 20-TSSOP

패키지: 20-TSSOP (0.173", 4.40mm Width)

74HC540D

Toshiba Semiconductor and Storage

IC BUFFER INVERT 6V 20SOIC

• Logic Type: Buffer, Inverting
• Number of Elements: 1
• Number of Bits per Element: 8
• Input Type: -
• Output Type: 3-State
• Current - Output High, Low: 7.8mA, 7.8mA
• Voltage - Supply: 2 V ~ 6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 20-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 20-SOIC

패키지: 20-SOIC (0.295", 7.50mm Width)

TC74VHC32F(EL,K,F)

Toshiba Semiconductor and Storage

X34 OR GATE VCC: 2-5.5V

• Logic Type: OR Gate
• Number of Circuits: 4
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 2V ~ 5.5V
• Current - Quiescent (Max): 2µA
• Current - Output High, Low: 8mA, 8mA
• Logic Level - Low: 0.1V ~ 36V
• Logic Level - High: 2V ~ 4.5V
• Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: 14-SOP
• Package / Case: 14-SOIC (0.209", 5.30mm Width)

패키지: 14-SOIC (0.209", 5.30mm Width)

RN2105MFV-L3F-CT

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A VESM

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 2.2 kOhms
• Resistor - Emitter Base (R2) (Ohms): 47 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250 MHz
• Power - Max: 150 mW
• Mounting Type: Surface Mount
• Package / Case: SOT-723
• Supplier Device Package: VESM

패키지: -

RN2905FE-LF-CT

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.1W ES6

• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 2.2kOhms
• Resistor - Emitter Base (R2) (Ohms): 47kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 200MHz
• Power - Max: 100mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: ES6

패키지: -

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TC7SBL384CFU-LF

Toshiba Semiconductor and Storage

IC SWITCH SPST 18 OHM USV

• Switch Circuit: SPST - NO
• Multiplexer/Demultiplexer Circuit: 1:1
• Number of Circuits: 1
• On-State Resistance (Max): 18Ohm
• Channel-to-Channel Matching (ΔRon): -
• Voltage - Supply, Single (V+): 1.65V ~ 3.6V
• Voltage - Supply, Dual (V±): -
• Switch Time (Ton, Toff) (Max): 6ns, 6ns
• -3db Bandwidth: -
• Charge Injection: -
• Channel Capacitance (CS(off), CD(off)): 3.5pF
• Current - Leakage (IS(off)) (Max): 1µA
• Crosstalk: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 5-TSSOP, SC-70-5, SOT-353
• Supplier Device Package: 5-SSOP

패키지: -

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TCR2EN34-LF-SE

Toshiba Semiconductor and Storage

LDO REG VOUT=3.4V IOUT=200MA

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 3.4V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.18V @ 150mA
• Current - Output: 200mA
• Current - Quiescent (Iq): 60 µA
• Current - Supply (Max): -
• PSRR: -
• Control Features: Enable
• Protection Features: Over Current
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-XFDFN Exposed Pad
• Supplier Device Package: 4-SDFN (0.8x0.8)

패키지: -

TPH2R003PL-LQ

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 100A 8SOP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.1V @ 500µA
• Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 6410 pF @ 15 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 830mW (Ta), 116W (Tc)
• Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
• Operating Temperature: 175°C
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOP Advance (5x5)
• Package / Case: 8-PowerVDFN

패키지: -

TCR3DM33-RF-SE

Toshiba Semiconductor and Storage

LDO REG IOUT: 300MA VIN: 6V VOUT

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 3.3V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.23V @ 300mA
• Current - Output: 300mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: Enable
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-UDFN Exposed Pad
• Supplier Device Package: 4-DFN (1x1)

패키지: -

TRS12E65H-S1Q

Toshiba Semiconductor and Storage

G3 SIC-SBD 650V 12A TO-220-2L

• Diode Type: SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max): 650 V
• Current - Average Rectified (Io): 12A
• Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 12 A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0 ns
• Current - Reverse Leakage @ Vr: 120 µA @ 650 V
• Capacitance @ Vr, F: 778pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220-2L
• Operating Temperature - Junction: 175°C

패키지: -