페이지 41 - Toshiba Semiconductor and Storage 제품

부품 번호	제조업체	설명	패키지	재고
2SJ438,MDKQ(M	Toshiba Semiconductor and Storage	MOSFET P-CH FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-220NIS Package / Case: TO-220-3 Full Pack	패키지: TO-220-3 Full Pack	재고6,752
TPN6R303NC,LQ	Toshiba Semiconductor and Storage	MOSFET N CH 30V 20A 8TSON-ADV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW (Ta), 19W (Tc) Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSON Advance (3.3x3.3) Package / Case: 8-PowerVDFN	패키지: 8-PowerVDFN	재고6,272
TK5A60W,S4VX	Toshiba Semiconductor and Storage	MOSFET N CH 600V 5.4A TO-220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.7V @ 270µA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 300V Vgs (Max): ±30V FET Feature: Super Junction Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 900 mOhm @ 2.7A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack, Isolated Tab	패키지: TO-220-3 Full Pack, Isolated Tab	재고6,108
SSM6J206FE(TE85L,F	Toshiba Semiconductor and Storage	MOSFET P-CH 20V 2A ES6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 335pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 130 mOhm @ 1A, 4V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: ES6 (1.6x1.6) Package / Case: SOT-563, SOT-666	패키지: SOT-563, SOT-666	재고46,512
2SC2229-O(MIT1F,M)	Toshiba Semiconductor and Storage	TRANS NPN 50MA 150V TO226-3 Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 150V Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Power - Max: 800mW Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	패키지: TO-226-3, TO-92-3 Long Body	재고5,888
RN2304(TE85L,F)	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 0.1W USM Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	패키지: SC-70, SOT-323	재고27,000
TA76431AS,T6WNLF(J	Toshiba Semiconductor and Storage	IC REG LINEAR 100MA LSTM Output Configuration: - Output Type: - Number of Regulators: 1 Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 100mA Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: -40°C ~ 85°C Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: LSTM	패키지: TO-226-3, TO-92-3 Long Body	재고2,080
TB62755FPG,EL	Toshiba Semiconductor and Storage	IC LED DRVR RGLTR DIM 20MA 6SON Type: DC DC Regulator Topology: Step-Up (Boost) Internal Switch(s): Yes Number of Outputs: 1 Voltage - Supply (Min): 2.8V Voltage - Supply (Max): 5.5V Voltage - Output: - Current - Output / Channel: 20mA Frequency: 1MHz Dimming: PWM Applications: Backlight Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 6-UFDFN Exposed Pad Supplier Device Package: 6-SON	패키지: 6-UFDFN Exposed Pad	재고3,968
TC7SZ32FU,LJ(CT	Toshiba Semiconductor and Storage	IC GATE OR 1CH 2-INP USV Logic Type: OR Gate Number of Circuits: 1 Number of Inputs: 2 Features: - Voltage - Supply: 1.8 V ~ 5.5 V Current - Quiescent (Max): 2µA Current - Output High, Low: 32mA, 32mA Logic Level - Low: - Logic Level - High: - Max Propagation Delay @ V, Max CL: 4.5ns @ 5V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: USV Package / Case: 5-TSSOP, SC-70-5, SOT-353	패키지: 5-TSSOP, SC-70-5, SOT-353	재고86,466
TC7SET126F,LJ(CB	Toshiba Semiconductor and Storage	IC BUS BUFFER 3-ST TTL 5-SSOP Logic Type: Buffer, Non-Inverting Number of Elements: 1 Number of Bits per Element: 1 Input Type: - Output Type: Push-Pull Current - Output High, Low: 8mA, 8mA Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	패키지: SC-74A, SOT-753	재고50,598
TB2955HQ(O)	Toshiba Semiconductor and Storage	IC AMP BTL AUDIO 45W 4CH HZIP25 Type: - Output Type: - Max Output Power x Channels @ Load: - Voltage - Supply: - Features: - Mounting Type: Through Hole Operating Temperature: - Supplier Device Package: 25-HZIP Package / Case: 25-SIP, Formed Leads	패키지: 25-SIP, Formed Leads	재고4,672
DF5A3.3FU(TE85L,F)	Toshiba Semiconductor and Storage	TVS DIODE 1VWM USV Type: Zener Unidirectional Channels: 4 Bidirectional Channels: - Voltage - Reverse Standoff (Typ): 1V Voltage - Breakdown (Min): 3.1V Voltage - Clamping (Max) @ Ipp: - Current - Peak Pulse (10/1000µs): - Power - Peak Pulse: - Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: 115pF @ 1MHz Operating Temperature: - Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package: USV	패키지: 5-TSSOP, SC-70-5, SOT-353	재고2,718
TLP160G(U,F)	Toshiba Semiconductor and Storage	OPTOISOLATOR 2.5KV TRIAC 6MFSOP Output Type: Triac Zero Crossing Circuit: No Number of Channels: 1 Voltage - Isolation: 2500Vrms Voltage - Off State: 400V Static dV/dt (Min): 200V/µs Current - LED Trigger (Ift) (Max): 10mA Current - On State (It (RMS)) (Max): 70mA Current - Hold (Ih): 600µA (Typ) Turn On Time: 30µs Voltage - Forward (Vf) (Typ): 1.15V Current - DC Forward (If) (Max): 50mA Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.173", 4.40mm Width) 4 Leads Supplier Device Package: 6-MFSOP, 4 Lead Approvals: UR	패키지: 6-SOIC (0.173", 4.40mm Width) 4 Leads	재고4,698
TLP292-4(GB,E	Toshiba Semiconductor and Storage	OPTOISOLATOR 3.75KV TRANS SO16 Number of Channels: 4 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 5mA Current Transfer Ratio (Max): 600% @ 5mA Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Input Type: AC, DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55°C ~ 125°C Mounting Type: Surface Mount Package / Case: 16-SOIC (0.179", 4.55mm Width) Supplier Device Package: 16-SO	패키지: 16-SOIC (0.179", 4.55mm Width)	재고4,482
TLP293-4(V4-TR,E	Toshiba Semiconductor and Storage	OPTOISOLATOR 3.75KV TRANS SO16 Number of Channels: 4 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 50% @ 5mA Current Transfer Ratio (Max): 600% @ 5mA Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Input Type: DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55°C ~ 125°C Mounting Type: Surface Mount Package / Case: 16-SOIC (0.179", 4.55mm Width) Supplier Device Package: 16-SO	패키지: 16-SOIC (0.179", 4.55mm Width)	재고5,724
TLP358(TP1,F)	Toshiba Semiconductor and Storage	OPTOISO 3.75KV GATE DRIVER 8SMD Technology: Optical Coupling Number of Channels: 1 Voltage - Isolation: 3750Vrms Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 500ns, 500ns Pulse Width Distortion (Max): 250ns Rise / Fall Time (Typ): 17ns, 17ns Current - Output High, Low: 5A, 5A Current - Peak Output: 6A Voltage - Forward (Vf) (Typ): 1.57V Current - DC Forward (If) (Max): 20mA Voltage - Supply: 15 V ~ 30 V Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Package / Case: 8-SMD, Gull Wing Supplier Device Package: 8-SMD Approvals: cUL, UL	패키지: 8-SMD, Gull Wing	재고2,232
74VHC273FT	Toshiba Semiconductor and Storage	IC FF D-TYPE SNGL 8BIT 20TSSOPB Function: Master Reset Type: D-Type Output Type: Non-Inverted Number of Elements: 1 Number of Bits per Element: 8 Clock Frequency: 110MHz Max Propagation Delay @ V, Max CL: 11ns @ 5V, 50pF Trigger Type: Positive Edge Current - Output High, Low: 8mA, 8mA Voltage - Supply: 2 V ~ 5.5 V Current - Quiescent (Iq): 4µA Input Capacitance: 4pF Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 20-TSSOP (0.173", 4.40mm Width)	패키지: 20-TSSOP (0.173", 4.40mm Width)	재고6,660
74VHC9152FT	Toshiba Semiconductor and Storage	X34 PB-F SCHMITT INVERTER BUFFER Logic Type: Buffer, Inverting Number of Elements: 1 Number of Bits per Element: 9 Input Type: Schmitt Trigger Output Type: - Current - Output High, Low: 8mA, 8mA Voltage - Supply: 2V ~ 5.5V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: 20-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 20-TSSOPB	패키지: 20-TSSOP (0.173", 4.40mm Width)	재고26,544
TCR5BM12A,L3F	Toshiba Semiconductor and Storage	IC REG LIN 1.2V 500MA 5DFNB Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 1.2V Voltage - Output (Max): - Voltage Dropout (Max): 0.15V @ 500mA Current - Output: 500mA Current - Quiescent (Iq): 36µA Current - Supply (Max): - PSRR: 98dB (1kHz) Control Features: Current Limit, Enable Protection Features: Over Current, Over Temperature Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 4-XDFN Exposed Pad Supplier Device Package: 5-DFNB (1.2x1.2)	패키지: 4-XDFN Exposed Pad	재고42,996
TC78B004AFTG-EL	Toshiba Semiconductor and Storage	BRUSHLESS MOTOR CONTROLLER WITH Motor Type - Stepper: Multiphase Motor Type - AC, DC: Brushless DC (BLDC) Function: Controller - Speed Output Configuration: Pre-Driver - Half Bridge (3) Interface: PWM Technology: NMOS Step Resolution: - Applications: General Purpose Current - Output: 100mA Voltage - Supply: 10V ~ 28V Voltage - Load: - Operating Temperature: -30°C ~ 85°C Mounting Type: Surface Mount Package / Case: 40-WFQFN Exposed Pad Supplier Device Package: 40-WQFN (6x6)	패키지: -	재고12,000
RN2411-LF	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 50V 0.1A SMINI Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 10 kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	패키지: -	재고9,000
SSM3J65CTC-L3F	Toshiba Semiconductor and Storage	MOSFET P-CH 20V 700MA CST3C FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 700mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 48 pF @ 10 V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 4.5V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: CST3C Package / Case: SC-101, SOT-883	패키지: -	재고80,322
SSM3J16FU-TE85L-F	Toshiba Semiconductor and Storage	SMALL LOW RON PCH MOSFETS VDSS:- FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs(th) (Max) @ Id: 1.1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 11 pF @ 3 V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: USM Package / Case: SC-70, SOT-323	패키지: -	재고8,970
TPC8048-H-TE12L-Q	Toshiba Semiconductor and Storage	MOSFET N-CH 60V 16A 8SOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7540 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 6.9mOhm @ 8A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP (5.5x6.0) Package / Case: 8-SOIC (0.173", 4.40mm Width)	패키지: -	Request a Quote
SSM3J372R-LF	Toshiba Semiconductor and Storage	MOSFET P-CH 30V 6A SOT23F FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Vgs(th) (Max) @ Id: 1.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V Vgs (Max): +12V, -6V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: SOT-23F Package / Case: SOT-23-3 Flat Leads	패키지: -	재고603,510
TCR2EN25-LF-SE	Toshiba Semiconductor and Storage	LDO REG VOUT=2.5V IOUT=200MA Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 2.5V Voltage - Output (Max): - Voltage Dropout (Max): 0.21V @ 150mA Current - Output: 200mA Current - Quiescent (Iq): 60 µA Current - Supply (Max): - PSRR: 73dB (1kHz) Control Features: Enable Protection Features: Over Current Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 4-XFDFN Exposed Pad Supplier Device Package: 4-SDFN (0.8x0.8)	패키지: -	재고29,352
2SC4116-BL-LXHF	Toshiba Semiconductor and Storage	TRANS NPN 50V 0.15A SC70 Transistor Type: NPN Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V Power - Max: 100 mW Frequency - Transition: 80MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70	패키지: -	재고17,892
TMPM4NRF10FG	Toshiba Semiconductor and Storage	IC MCU 32BIT 1MB FLASH 176LQFP Core Processor: ARM® Cortex®-M4F Core Size: 32-Bit Speed: 200MHz Connectivity: CANbus, EBI/EMI, Ethernet, FIFO, I2C, IrDA, SIO, SPI, UART/USART, USB Peripherals: DMA, I2S, LVD, POR, PWM, WDT Number of I/O: 146 Program Memory Size: 1MB (1M x 8) Program Memory Type: FLASH EEPROM Size: 32K x 8 RAM Size: 256K x 8 Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V Data Converters: A/D 24x12b SAR; D/A 2x8b Oscillator Type: External, Internal Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 176-LQFP Supplier Device Package: 176-LQFP (20x20)	패키지: -	Request a Quote

2SJ438,MDKQ(M

Toshiba Semiconductor and Storage

MOSFET P-CH

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: TO-220NIS
Package / Case: TO-220-3 Full Pack

패키지: TO-220-3 Full Pack

재고6,752

TPN6R303NC,LQ

Toshiba Semiconductor and Storage

MOSFET N CH 30V 20A 8TSON-ADV

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 700mW (Ta), 19W (Tc)
Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 10A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Package / Case: 8-PowerVDFN

패키지: 8-PowerVDFN

재고6,272

TK5A60W,S4VX

Toshiba Semiconductor and Storage

MOSFET N CH 600V 5.4A TO-220SIS

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.7V @ 270µA
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 300V
Vgs (Max): ±30V
FET Feature: Super Junction
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 900 mOhm @ 2.7A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220SIS
Package / Case: TO-220-3 Full Pack, Isolated Tab

패키지: TO-220-3 Full Pack, Isolated Tab

재고6,108

SSM6J206FE(TE85L,F

Toshiba Semiconductor and Storage

MOSFET P-CH 20V 2A ES6

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 335pF @ 10V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 130 mOhm @ 1A, 4V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: ES6 (1.6x1.6)
Package / Case: SOT-563, SOT-666

패키지: SOT-563, SOT-666

재고46,512

2SC2229-O(MIT1F,M)

Toshiba Semiconductor and Storage

TRANS NPN 50MA 150V TO226-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Power - Max: 800mW
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

패키지: TO-226-3, TO-92-3 Long Body

재고5,888

RN2304(TE85L,F)

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 0.1W USM

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: USM

패키지: SC-70, SOT-323

재고27,000

TA76431AS,T6WNLF(J

Toshiba Semiconductor and Storage

IC REG LINEAR 100MA LSTM

Output Configuration: -
Output Type: -
Number of Regulators: 1
Voltage - Input (Max): -
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 100mA
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: -
Control Features: -
Protection Features: -
Operating Temperature: -40°C ~ 85°C
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: LSTM

패키지: TO-226-3, TO-92-3 Long Body

재고2,080

TB62755FPG,EL

Toshiba Semiconductor and Storage

IC LED DRVR RGLTR DIM 20MA 6SON

Type: DC DC Regulator
Topology: Step-Up (Boost)
Internal Switch(s): Yes
Number of Outputs: 1
Voltage - Supply (Min): 2.8V
Voltage - Supply (Max): 5.5V
Voltage - Output: -
Current - Output / Channel: 20mA
Frequency: 1MHz
Dimming: PWM
Applications: Backlight
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN Exposed Pad
Supplier Device Package: 6-SON

패키지: 6-UFDFN Exposed Pad

재고3,968

TC7SZ32FU,LJ(CT

Toshiba Semiconductor and Storage

IC GATE OR 1CH 2-INP USV

Logic Type: OR Gate
Number of Circuits: 1
Number of Inputs: 2
Features: -
Voltage - Supply: 1.8 V ~ 5.5 V
Current - Quiescent (Max): 2µA
Current - Output High, Low: 32mA, 32mA
Logic Level - Low: -
Logic Level - High: -
Max Propagation Delay @ V, Max CL: 4.5ns @ 5V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: USV
Package / Case: 5-TSSOP, SC-70-5, SOT-353

패키지: 5-TSSOP, SC-70-5, SOT-353

재고86,466

TC7SET126F,LJ(CB

Toshiba Semiconductor and Storage

IC BUS BUFFER 3-ST TTL 5-SSOP

Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Number of Bits per Element: 1
Input Type: -
Output Type: Push-Pull
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: SMV

패키지: SC-74A, SOT-753

재고50,598

TB2955HQ(O)

Toshiba Semiconductor and Storage

IC AMP BTL AUDIO 45W 4CH HZIP25

Type: -
Output Type: -
Max Output Power x Channels @ Load: -
Voltage - Supply: -
Features: -
Mounting Type: Through Hole
Operating Temperature: -
Supplier Device Package: 25-HZIP
Package / Case: 25-SIP, Formed Leads

패키지: 25-SIP, Formed Leads

재고4,672

DF5A3.3FU(TE85L,F)

Toshiba Semiconductor and Storage

TVS DIODE 1VWM USV

Type: Zener
Unidirectional Channels: 4
Bidirectional Channels: -
Voltage - Reverse Standoff (Typ): 1V
Voltage - Breakdown (Min): 3.1V
Voltage - Clamping (Max) @ Ipp: -
Current - Peak Pulse (10/1000µs): -
Power - Peak Pulse: -
Power Line Protection: No
Applications: General Purpose
Capacitance @ Frequency: 115pF @ 1MHz
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package: USV

패키지: 5-TSSOP, SC-70-5, SOT-353

재고2,718

TLP160G(U,F)

Toshiba Semiconductor and Storage

OPTOISOLATOR 2.5KV TRIAC 6MFSOP

Output Type: Triac
Zero Crossing Circuit: No
Number of Channels: 1
Voltage - Isolation: 2500Vrms
Voltage - Off State: 400V
Static dV/dt (Min): 200V/µs
Current - LED Trigger (Ift) (Max): 10mA
Current - On State (It (RMS)) (Max): 70mA
Current - Hold (Ih): 600µA (Typ)
Turn On Time: 30µs
Voltage - Forward (Vf) (Typ): 1.15V
Current - DC Forward (If) (Max): 50mA
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.173", 4.40mm Width) 4 Leads
Supplier Device Package: 6-MFSOP, 4 Lead
Approvals: UR

패키지: 6-SOIC (0.173", 4.40mm Width) 4 Leads

재고4,698

TLP292-4(GB,E

Toshiba Semiconductor and Storage

OPTOISOLATOR 3.75KV TRANS SO16

Number of Channels: 4
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Current Transfer Ratio (Max): 600% @ 5mA
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Input Type: AC, DC
Output Type: Transistor
Voltage - Output (Max): 80V
Current - Output / Channel: 50mA
Voltage - Forward (Vf) (Typ): 1.25V
Current - DC Forward (If) (Max): 50mA
Vce Saturation (Max): 300mV
Operating Temperature: -55°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Supplier Device Package: 16-SO

패키지: 16-SOIC (0.179", 4.55mm Width)

재고4,482

TLP293-4(V4-TR,E

Toshiba Semiconductor and Storage

OPTOISOLATOR 3.75KV TRANS SO16

Number of Channels: 4
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Current Transfer Ratio (Max): 600% @ 5mA
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Input Type: DC
Output Type: Transistor
Voltage - Output (Max): 80V
Current - Output / Channel: 50mA
Voltage - Forward (Vf) (Typ): 1.25V
Current - DC Forward (If) (Max): 50mA
Vce Saturation (Max): 300mV
Operating Temperature: -55°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Supplier Device Package: 16-SO

패키지: 16-SOIC (0.179", 4.55mm Width)

재고5,724

TLP358(TP1,F)

Toshiba Semiconductor and Storage

OPTOISO 3.75KV GATE DRIVER 8SMD

Technology: Optical Coupling
Number of Channels: 1
Voltage - Isolation: 3750Vrms
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 250ns
Rise / Fall Time (Typ): 17ns, 17ns
Current - Output High, Low: 5A, 5A
Current - Peak Output: 6A
Voltage - Forward (Vf) (Typ): 1.57V
Current - DC Forward (If) (Max): 20mA
Voltage - Supply: 15 V ~ 30 V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 8-SMD, Gull Wing
Supplier Device Package: 8-SMD
Approvals: cUL, UL

패키지: 8-SMD, Gull Wing

재고2,232

74VHC273FT

Toshiba Semiconductor and Storage

IC FF D-TYPE SNGL 8BIT 20TSSOPB

Function: Master Reset
Type: D-Type
Output Type: Non-Inverted
Number of Elements: 1
Number of Bits per Element: 8
Clock Frequency: 110MHz
Max Propagation Delay @ V, Max CL: 11ns @ 5V, 50pF
Trigger Type: Positive Edge
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2 V ~ 5.5 V
Current - Quiescent (Iq): 4µA
Input Capacitance: 4pF
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-TSSOP (0.173", 4.40mm Width)

패키지: 20-TSSOP (0.173", 4.40mm Width)

재고6,660

74VHC9152FT

Toshiba Semiconductor and Storage

X34 PB-F SCHMITT INVERTER BUFFER

Logic Type: Buffer, Inverting
Number of Elements: 1
Number of Bits per Element: 9
Input Type: Schmitt Trigger
Output Type: -
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 20-TSSOPB

패키지: 20-TSSOP (0.173", 4.40mm Width)

재고26,544

TCR5BM12A,L3F

Toshiba Semiconductor and Storage

IC REG LIN 1.2V 500MA 5DFNB

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 1.2V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.15V @ 500mA
Current - Output: 500mA
Current - Quiescent (Iq): 36µA
Current - Supply (Max): -
PSRR: 98dB (1kHz)
Control Features: Current Limit, Enable
Protection Features: Over Current, Over Temperature
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 4-XDFN Exposed Pad
Supplier Device Package: 5-DFNB (1.2x1.2)

패키지: 4-XDFN Exposed Pad

재고42,996

TC78B004AFTG-EL

Toshiba Semiconductor and Storage

BRUSHLESS MOTOR CONTROLLER WITH

Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Function: Controller - Speed
Output Configuration: Pre-Driver - Half Bridge (3)
Interface: PWM
Technology: NMOS
Step Resolution: -
Applications: General Purpose
Current - Output: 100mA
Voltage - Supply: 10V ~ 28V
Voltage - Load: -
Operating Temperature: -30°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 40-WFQFN Exposed Pad
Supplier Device Package: 40-WQFN (6x6)

패키지: -

재고12,000

RN2411-LF

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SMINI

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 10 kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini

패키지: -

재고9,000

SSM3J65CTC-L3F

Toshiba Semiconductor and Storage

MOSFET P-CH 20V 700MA CST3C

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 48 pF @ 10 V
Vgs (Max): ±10V
FET Feature: -
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 4.5V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: CST3C
Package / Case: SC-101, SOT-883

패키지: -

재고80,322

SSM3J16FU-TE85L-F

Toshiba Semiconductor and Storage

SMALL LOW RON PCH MOSFETS VDSS:-

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 11 pF @ 3 V
Vgs (Max): ±10V
FET Feature: -
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: USM
Package / Case: SC-70, SOT-323

패키지: -

재고8,970

TPC8048-H-TE12L-Q

Toshiba Semiconductor and Storage

MOSFET N-CH 60V 16A 8SOP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7540 pF @ 10 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 8A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP (5.5x6.0)
Package / Case: 8-SOIC (0.173", 4.40mm Width)

패키지: -

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SSM3J372R-LF

Toshiba Semiconductor and Storage

MOSFET P-CH 30V 6A SOT23F

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
Vgs (Max): +12V, -6V
FET Feature: -
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: SOT-23F
Package / Case: SOT-23-3 Flat Leads

패키지: -

재고603,510

TCR2EN25-LF-SE

Toshiba Semiconductor and Storage

LDO REG VOUT=2.5V IOUT=200MA

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 2.5V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.21V @ 150mA
Current - Output: 200mA
Current - Quiescent (Iq): 60 µA
Current - Supply (Max): -
PSRR: 73dB (1kHz)
Control Features: Enable
Protection Features: Over Current
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 4-XFDFN Exposed Pad
Supplier Device Package: 4-SDFN (0.8x0.8)

패키지: -

재고29,352

2SC4116-BL-LXHF

Toshiba Semiconductor and Storage

TRANS NPN 50V 0.15A SC70

Transistor Type: NPN
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Power - Max: 100 mW
Frequency - Transition: 80MHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70

패키지: -

재고17,892

TMPM4NRF10FG

Toshiba Semiconductor and Storage

IC MCU 32BIT 1MB FLASH 176LQFP

Core Processor: ARM® Cortex®-M4F
Core Size: 32-Bit
Speed: 200MHz
Connectivity: CANbus, EBI/EMI, Ethernet, FIFO, I2C, IrDA, SIO, SPI, UART/USART, USB
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Number of I/O: 146
Program Memory Size: 1MB (1M x 8)
Program Memory Type: FLASH
EEPROM Size: 32K x 8
RAM Size: 256K x 8
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Data Converters: A/D 24x12b SAR; D/A 2x8b
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 176-LQFP
Supplier Device Package: 176-LQFP (20x20)

패키지: -

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