페이지 59 - Toshiba Semiconductor and Storage 제품 | Heisener Electronics
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Toshiba Semiconductor and Storage 제품

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TPCC8001-H(TE12LQM
Toshiba Semiconductor and Storage

MOSFET N-CH 30V 22A 8TSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta), 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.3 mOhm @ 11A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-TSON
  • Package / Case: 8-VDFN Exposed Pad
패키지: 8-VDFN Exposed Pad
재고4,976
SSM3K15AFU,LF
Toshiba Semiconductor and Storage

MOSFET N-CH 30V 0.1A SSM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
  • Vgs(th) (Max) @ Id: 1.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 13.5pF @ 3V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 10mA, 4V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: USM
  • Package / Case: SC-70, SOT-323
패키지: SC-70, SOT-323
재고2,720
TPW1R005PL,L1Q
Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 45V
  • Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 122nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9600pF @ 22.5V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 960mW (Ta), 170W (Tc)
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-DSOP Advance
  • Package / Case: 8-PowerWDFN
패키지: 8-PowerWDFN
재고7,712
TK39N60X,S1F
Toshiba Semiconductor and Storage

MOSFET N-CH 600V 38.8A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 1.9mA
  • Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 300V
  • Vgs (Max): ±30V
  • FET Feature: Super Junction
  • Power Dissipation (Max): 270W (Tc)
  • Rds On (Max) @ Id, Vgs: 65 mOhm @ 12.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
패키지: TO-247-3
재고7,632
SSM6N55NU,LF(T
Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 4A UDFN6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: 46 mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 15V
  • Power - Max: 1W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WDFN Exposed Pad
  • Supplier Device Package: 6-µDFN(2x2)
패키지: 6-WDFN Exposed Pad
재고7,536
TPC6901(TE85L,F,M)
Toshiba Semiconductor and Storage

TRANS NPN/PNP 50V 6VS

  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 1A, 700mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 170mV @ 6mA, 300mA / 230mV @ 10mA, 300mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 100mA, 2V / 200 @ 100mA, 2V
  • Power - Max: 400mW
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: VS-6 (2.9x2.8)
패키지: SOT-23-6 Thin, TSOT-23-6
재고4,528
1SV280,H3F
Toshiba Semiconductor and Storage

DIODE VARACTOR 15V ESC

  • Capacitance @ Vr, F: 2pF @ 10V, 1MHz
  • Capacitance Ratio: 2.4
  • Capacitance Ratio Condition: C2/C10
  • Voltage - Peak Reverse (Max): 15V
  • Diode Type: Single
  • Q @ Vr, F: -
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: ESC
패키지: SC-79, SOD-523
재고570,888
DSR01S30SC(TPL3)
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 100MA SC2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 620mV @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 700µA @ 30V
  • Capacitance @ Vr, F: 8.2pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, No Lead
  • Supplier Device Package: SC2
  • Operating Temperature - Junction: 125°C (Max)
패키지: 2-SMD, No Lead
재고283,716
TA76431S,T6F(J
Toshiba Semiconductor and Storage

IC REG LINEAR 100MA LSTM

  • Output Configuration: -
  • Output Type: -
  • Number of Regulators: 1
  • Voltage - Input (Max): -
  • Voltage - Output (Min/Fixed): -
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: 100mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: -
  • Protection Features: -
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: LSTM
패키지: TO-226-3, TO-92-3 Long Body
재고5,776
TA58L08S(FJTN,AQ)
Toshiba Semiconductor and Storage

IC REG LINEAR 250MA LSTM

  • Output Configuration: -
  • Output Type: -
  • Number of Regulators: 1
  • Voltage - Input (Max): -
  • Voltage - Output (Min/Fixed): -
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: 250mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: -
  • Protection Features: -
  • Operating Temperature: -40°C ~ 105°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: LSTM
패키지: TO-220-3 Full Pack
재고6,496
TA48LS00F(TE85L,F)
Toshiba Semiconductor and Storage

IC REG LIN POS ADJ 300MA PS-8

  • Output Configuration: Positive
  • Output Type: Adjustable
  • Number of Regulators: 1
  • Voltage - Input (Max): 14V
  • Voltage - Output (Min/Fixed): 1.5V
  • Voltage - Output (Max): 5V
  • Voltage Dropout (Max): 0.6V @ 300mA
  • Current - Output: 300mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 1.7mA ~ 10mA
  • PSRR: 60dB (120Hz)
  • Control Features: Enable
  • Protection Features: Over Current, Over Temperature
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: PS-8 (2.9x2.4)
패키지: 8-SMD, Flat Lead
재고7,504
TB62218AFNG,C8,EL
Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 48HTSSOP

  • Motor Type - Stepper: Bipolar
  • Motor Type - AC, DC: -
  • Function: Driver - Fully Integrated, Control and Power Stage
  • Output Configuration: Half Bridge (4)
  • Interface: Parallel
  • Technology: DMOS
  • Step Resolution: 1, 1/2, 1/4
  • Applications: General Purpose
  • Current - Output: 2A
  • Voltage - Supply: 4.75 V ~ 5.25 V
  • Voltage - Load: 10 V ~ 38 V
  • Operating Temperature: -20°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad
  • Supplier Device Package: 48-HTSSOP
패키지: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad
재고13,878
74HC157D(BJ)
Toshiba Semiconductor and Storage

IC QUAD 2-IN MUX 16SOIC

  • Type: Multiplexer
  • Circuit: 4 x 2:1
  • Independent Circuits: 1
  • Current - Output High, Low: 5.2mA, 5.2mA
  • Voltage Supply Source: Single Supply
  • Voltage - Supply: 2 V ~ 6 V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
패키지: 16-SOIC (0.154", 3.90mm Width)
재고24,702
74LCX00FT(AE)
Toshiba Semiconductor and Storage

IC GATE NAND 4CH 2-INP

  • Logic Type: NAND Gate
  • Number of Circuits: 4
  • Number of Inputs: 2
  • Features: -
  • Voltage - Supply: 1.65 V ~ 3.6 V
  • Current - Quiescent (Max): 10µA
  • Current - Output High, Low: 24mA, 24mA
  • Logic Level - Low: 0.7 V ~ 0.8 V
  • Logic Level - High: 1.7 V ~ 2 V
  • Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 50pF
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 14-TSSOP
  • Package / Case: 14-TSSOP (0.173", 4.40mm Width)
패키지: 14-TSSOP (0.173", 4.40mm Width)
재고21,102
TL12W03-D(T30)
Toshiba Semiconductor and Storage

LED COOL WHITE 6500K 2SMD

  • Color: White, Cool
  • CCT (K): 6500K (5650K ~ 8000K)
  • Flux @ 85°C, Current - Test: -
  • Flux @ 25°C, Current - Test: 90 lm (67 lm ~ 113 lm)
  • Current - Test: 350mA
  • Voltage - Forward (Vf) (Typ): 3.3V
  • Lumens/Watt @ Current - Test: 78 lm/W
  • CRI (Color Rendering Index): -
  • Current - Max: 500mA
  • Viewing Angle: -
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, Flat Lead
  • Supplier Device Package: -
  • Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
  • Height - Seated (Max): 0.089" (2.25mm)
패키지: 2-SMD, Flat Lead
재고4,680
DF2S6.8UCT,L3F
Toshiba Semiconductor and Storage

TVS DIODE 19VWM 22VC

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 19V (Max)
  • Voltage - Breakdown (Min): 22V
  • Voltage - Clamping (Max) @ Ipp: -
  • Current - Peak Pulse (10/1000µs): -
  • Power - Peak Pulse: -
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: 1.6pF @ 1MHz
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-882
  • Supplier Device Package: CST2
패키지: SOD-882
재고2,736
TLP185(TPL,SE
Toshiba Semiconductor and Storage

OPTOISO 3.75KV TRANS 6-SO 4 LEAD

  • Number of Channels: 1
  • Voltage - Isolation: 3750Vrms
  • Current Transfer Ratio (Min): 50% @ 5mA
  • Current Transfer Ratio (Max): 600% @ 5mA
  • Turn On / Turn Off Time (Typ): 3µs, 3µs
  • Rise / Fall Time (Typ): 2µs, 3µs
  • Input Type: DC
  • Output Type: Transistor
  • Voltage - Output (Max): 80V
  • Current - Output / Channel: 50mA
  • Voltage - Forward (Vf) (Typ): 1.25V
  • Current - DC Forward (If) (Max): 50mA
  • Vce Saturation (Max): 300mV
  • Operating Temperature: -55°C ~ 110°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD (4 Leads), Gull Wing
  • Supplier Device Package: 6-SO, 4 Lead
패키지: 6-SMD (4 Leads), Gull Wing
재고6,570
hot TLP550(F)
Toshiba Semiconductor and Storage

OPTOISOLATOR 2.5KV TRANS 8-DIP

  • Number of Channels: 1
  • Voltage - Isolation: 2500Vrms
  • Current Transfer Ratio (Min): 10% @ 16mA
  • Current Transfer Ratio (Max): -
  • Turn On / Turn Off Time (Typ): 300ns, 1µs
  • Rise / Fall Time (Typ): -
  • Input Type: DC
  • Output Type: Transistor
  • Voltage - Output (Max): 15V
  • Current - Output / Channel: 8mA
  • Voltage - Forward (Vf) (Typ): 1.65V
  • Current - DC Forward (If) (Max): 25mA
  • Vce Saturation (Max): -
  • Operating Temperature: -55°C ~ 100°C
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-DIP
패키지: 8-DIP (0.300", 7.62mm)
재고636,000
TC7WH157FK,LJ(CT
Toshiba Semiconductor and Storage

X34 PB US8 L-MOS LOGIC (VHS)

  • Type: Multiplexer
  • Circuit: 1 x 2:1
  • Independent Circuits: 1
  • Current - Output High, Low: 8mA, 8mA
  • Voltage Supply Source: Single Supply
  • Voltage - Supply: 2 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-VFSOP (0.091", 2.30mm Width)
  • Supplier Device Package: US8
패키지: 8-VFSOP (0.091", 2.30mm Width)
재고4,800
hot 74HCT32D
Toshiba Semiconductor and Storage

IC GATE OR 4CH 2-INP 14SOIC

  • Logic Type: OR Gate
  • Number of Circuits: 4
  • Number of Inputs: 2
  • Features: -
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Current - Quiescent (Max): 1µA
  • Current - Output High, Low: 4mA, 4mA
  • Logic Level - Low: 0.8V
  • Logic Level - High: 2V
  • Max Propagation Delay @ V, Max CL: 18ns @ 5.5V, 50pF
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 14-SOIC
  • Package / Case: 14-SOIC (0.154", 3.90mm Width)
패키지: 14-SOIC (0.154", 3.90mm Width)
재고15,984
TCR3UG18A,LF
Toshiba Semiconductor and Storage

IC REG LIN 1.8V 300MA 4WCSP-F

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 1.8V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.457V @ 300mA
  • Current - Output: 300mA
  • Current - Quiescent (Iq): 680nA
  • Current - Supply (Max): -
  • PSRR: 70dB (1kHz)
  • Control Features: Enable
  • Protection Features: Inrush Current, Over Current, Thermal Shutdown
  • Operating Temperature: -40°C ~ 85°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-XFBGA, WLCSP
  • Supplier Device Package: 4-WCSP-F (0.65x0.65)
패키지: 4-XFBGA, WLCSP
재고7,568
TC7MPB9307FK(EL)
Toshiba Semiconductor and Storage

X34 DUAL-SUPPLY LEVEL SHIFT BUS

  • Type: Bus Switch
  • Circuit: 8 x 1:1
  • Independent Circuits: 1
  • Current - Output High, Low: -
  • Voltage Supply Source: Dual Supply
  • Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 20-VFSOP (0.118", 3.00mm Width)
  • Supplier Device Package: 20-VSSOP
패키지: 20-VFSOP (0.118", 3.00mm Width)
재고22,128
TK3A90E-S4X
Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR TO-

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900 V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.6Ohm @ 1.3A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
패키지: -
재고129
RN4984FE-LXHF-CT
Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYMMETR

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47kOhms
  • Resistor - Emitter Base (R2) (Ohms): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz, 200MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
패키지: -
재고22,980
RN2905-LXHF-CT
Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYM) PN

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 2.2kOhms
  • Resistor - Emitter Base (R2) (Ohms): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
패키지: -
재고8,910
CMH08-TE12L-Q-M
Toshiba Semiconductor and Storage

DIODE GEN PURP 400V 2A M-FLAT

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 100 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: M-FLAT (2.4x3.8)
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: -
Request a Quote
RN1903-LXHF-CT
Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYM) NP

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22kOhms
  • Resistor - Emitter Base (R2) (Ohms): 22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
패키지: -
재고9,000
TCR2EN27-LF-SE
Toshiba Semiconductor and Storage

LDO REG VOUT=2.7V IOUT=200MA

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 2.7V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.21V @ 150mA
  • Current - Output: 200mA
  • Current - Quiescent (Iq): 60 µA
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: Enable
  • Protection Features: Over Current
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-XFDFN Exposed Pad
  • Supplier Device Package: 4-SDFN (0.8x0.8)
패키지: -
재고20,700