Toshiba Semiconductor and Storage 제품

TPCC8005-H(TE12LQM

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 26A 8TSON

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 26A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.3V @ 500µA
• Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 700mW (Ta), 30W (Tc)
• Rds On (Max) @ Id, Vgs: 6.4 mOhm @ 13A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-TSON
• Package / Case: 8-VDFN Exposed Pad

패키지: 8-VDFN Exposed Pad

TK13E25D,S1X(S

Toshiba Semiconductor and Storage

MOSFET N-CH 250V 13A TO-220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 250V
• Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 102W (Tc)
• Rds On (Max) @ Id, Vgs: 250 mOhm @ 6.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220-3
• Package / Case: TO-220-3

패키지: TO-220-3

TPC8066-H,LQ(S

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 11A 8SOP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.3V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1W (Ta)
• Rds On (Max) @ Id, Vgs: 16 mOhm @ 5.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOP
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

패키지: 8-SOIC (0.154", 3.90mm Width)

SSM6K781G,LF

Toshiba Semiconductor and Storage

MOSFET N-CH 12V 7A 6WCSP6C

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 12V
• Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 6V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 1.6W (Ta)
• Rds On (Max) @ Id, Vgs: 18 mOhm @ 1.5A, 4.5V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 6-WCSPC (1.5x1.0)
• Package / Case: 6-UFBGA, WLCSP

패키지: 6-UFBGA, WLCSP

SSM6L11TU(TE85L,F)

Toshiba Semiconductor and Storage

MOSFET N/P-CH 20V 0.5A UF6 S

• FET Type: N and P-Channel
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 500mA
• Rds On (Max) @ Id, Vgs: 145 mOhm @ 250MA, 4V
• Vgs(th) (Max) @ Id: 1.1V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 268pF @ 10V
• Power - Max: 500mW
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-SMD, Flat Leads
• Supplier Device Package: UF6

패키지: 6-SMD, Flat Leads

2SC2235-Y(MBSH1,FM

Toshiba Semiconductor and Storage

TRANS NPN 800MA 120V TO226-3

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 800mA
• Voltage - Collector Emitter Breakdown (Max): 120V
• Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
• Power - Max: 900mW
• Frequency - Transition: 120MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: TO-92MOD

패키지: TO-226-3, TO-92-3 Long Body

RN1101MFV,L3F

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V SOT723

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 4.7k
• Resistor - Emitter Base (R2) (Ohms): 4.7k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: -
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: SOT-723
• Supplier Device Package: VESM

패키지: SOT-723

RN2966FE(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.1W ES6

• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 4.7k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 200MHz
• Power - Max: 100mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: ES6

패키지: SOT-563, SOT-666

RN1907,LF

Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.2W US6

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: US6

패키지: 6-TSSOP, SC-88, SOT-363

TAR5S40(TE85L,F)

Toshiba Semiconductor and Storage

IC REG LINEAR 200MA SMV

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 200mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SMV

패키지: SC-74A, SOT-753

TCR2DG18,LF

Toshiba Semiconductor and Storage

IC REG LINEAR 1.8V 200MA 4WCSP

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 1.8V
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 200mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 70µA
• PSRR: -
• Control Features: Enable
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-XFBGA, WLCSP
• Supplier Device Package: 4-WCSP (0.79x0.79)

패키지: 4-XFBGA, WLCSP

TBD62502AFNG,EL

Toshiba Semiconductor and Storage

IC LOAD SWITCH 7CH 0.3A 16SSOP

• Switch Type: General Purpose
• Number of Outputs: 7
• Ratio - Input:Output: 1:1
• Output Configuration: Low Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 50V (Max)
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 1.75A
• Rds On (Typ): -
• Input Type: Inverting
• Features: -
• Fault Protection: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 16-LSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 16-SSOP

패키지: 16-LSSOP (0.173", 4.40mm Width)

TC58BVG2S0HTA00

Toshiba Semiconductor and Storage

IC EEPROM 4GBIT 25NS 48TSOP

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM - NAND
• Memory Size: 4Gb (512M x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 25ns
• Access Time: 25ns
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-TFSOP (0.724", 18.40mm Width)
• Supplier Device Package: 48-TSOP I

패키지: 48-TFSOP (0.724", 18.40mm Width)

TC7S00FU,LF

Toshiba Semiconductor and Storage

IC GATE NAND 1CH 2-INP USV

• Logic Type: NAND Gate
• Number of Circuits: 1
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 2 V ~ 6 V
• Current - Quiescent (Max): 1µA
• Current - Output High, Low: 2.6mA, 2.6mA
• Logic Level - Low: 0.5 V ~ 1.8 V
• Logic Level - High: 1.5 V ~ 4.2 V
• Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: USV
• Package / Case: 5-TSSOP, SC-70-5, SOT-353

패키지: 5-TSSOP, SC-70-5, SOT-353

74HC273D(BJ)

Toshiba Semiconductor and Storage

IC D-TYPE POS TRG SNGL 20SOIC

• Function: Master Reset
• Type: D-Type
• Output Type: Non-Inverted
• Number of Elements: 1
• Number of Bits per Element: 8
• Clock Frequency: 66MHz
• Max Propagation Delay @ V, Max CL: 25ns @ 6V, 50pF
• Trigger Type: Positive Edge
• Current - Output High, Low: 5.2mA, 5.2mA
• Voltage - Supply: 2 V ~ 6 V
• Current - Quiescent (Iq): 4µA
• Input Capacitance: 3pF
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 20-SOIC (0.295", 7.50mm Width)

패키지: 20-SOIC (0.295", 7.50mm Width)

TC7SH125F,LF

Toshiba Semiconductor and Storage

IC BUS BUFF DVR TRI-ST 5SSOP

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 1
• Number of Bits per Element: 1
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 8mA, 8mA
• Voltage - Supply: 2 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SMV

패키지: SC-74A, SOT-753

TC358748XBG(EL)

Toshiba Semiconductor and Storage

CMOS MIPI CSI-2 TO PARALLEL

• Applications: Camera
• Interface: SPI
• Voltage - Supply: 1.8 V ~ 3.3 V
• Package / Case: 80-VFBGA
• Supplier Device Package: 80-VFBGA (7x7)
• Mounting Type: Surface Mount

패키지: 80-VFBGA

LTA121C32SF

Toshiba Semiconductor and Storage

LCD 12.1INCH 800X600 SVGA LVDS

• Display Type: TFT - Color
• Display Mode: Transmissive
• Touchscreen: -
• Diagonal Screen Size: 12.1" (307.34mm)
• Viewing Area: 246.00mm W x 184.50mm H
• Backlight: CCFL
• Dot Pixels: 800 x 600 (SVGA)
• Interface: LVDS
• Graphics Color: Red, Green, Blue (RGB)
• Background Color: -

패키지: -

DF2B7M3SL,L3F

Toshiba Semiconductor and Storage

TVS DIODE 5.5VWM 20VC SL2-2

• Type: Steering (Rail to Rail)
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 5.5V (Max)
• Voltage - Breakdown (Min): 6V
• Voltage - Clamping (Max) @ Ipp: 20V
• Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
• Power - Peak Pulse: 50W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 0.1pF @ 1MHz
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 0201 (0603 Metric)
• Supplier Device Package: SL2

패키지: 0201 (0603 Metric)

TLP3412(TP,F

Toshiba Semiconductor and Storage

PHOTORELAY SPST-NO 400MA 60V

• Circuit: SPST-NO (1 Form A)
• Output Type: AC, DC
• On-State Resistance (Max): 1.5 Ohm
• Load Current: 400mA
• Voltage - Input: 1.27VDC
• Voltage - Load: 0 ~ 60 V
• Mounting Type: Surface Mount
• Termination Style: SMD (SMT) Tab
• Package / Case: 4-SMD (0.096", 2.45mm)
• Supplier Device Package: 4-VSON
• Relay Type: Relay

패키지: 4-SMD (0.096", 2.45mm)

TLP785(GB,F)

Toshiba Semiconductor and Storage

OPTOISOLATR 5KV TRANSISTOR 4-DIP

• Number of Channels: 1
• Voltage - Isolation: 5000Vrms
• Current Transfer Ratio (Min): 100% @ 5mA
• Current Transfer Ratio (Max): 600% @ 5mA
• Turn On / Turn Off Time (Typ): 3µs, 3µs
• Rise / Fall Time (Typ): 2µs, 3µs
• Input Type: DC
• Output Type: Transistor
• Voltage - Output (Max): 80V
• Current - Output / Channel: 50mA
• Voltage - Forward (Vf) (Typ): 1.15V
• Current - DC Forward (If) (Max): 60mA
• Vce Saturation (Max): 400mV
• Operating Temperature: -55°C ~ 110°C
• Mounting Type: Through Hole
• Package / Case: 4-DIP (0.300", 7.62mm)
• Supplier Device Package: 4-DIP

패키지: 4-DIP (0.300", 7.62mm)

TLP701A(F)

Toshiba Semiconductor and Storage

OPTOISO 5KV GATE DRIVER 6SDIP GW

• Technology: Optical Coupling
• Number of Channels: 1
• Voltage - Isolation: 5000Vrms
• Common Mode Transient Immunity (Min): 20kV/µs
• Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
• Pulse Width Distortion (Max): 350ns
• Rise / Fall Time (Typ): 50ns, 50ns
• Current - Output High, Low: 400mA, 400mA
• Current - Peak Output: 600mA
• Voltage - Forward (Vf) (Typ): 1.57V
• Current - DC Forward (If) (Max): 25mA
• Voltage - Supply: 10 V ~ 30 V
• Operating Temperature: -40°C ~ 100°C
• Mounting Type: Surface Mount
• Package / Case: 6-SOIC (0.268", 6.80mm Width)
• Supplier Device Package: 6-SDIP Gull Wing
• Approvals: cUL, UL

패키지: 6-SOIC (0.268", 6.80mm Width)

TBD62089APG

Toshiba Semiconductor and Storage

TRANSISTOR ARRAY INTERFACE DRIVE

• Switch Type: -
• Number of Outputs: -
• Ratio - Input:Output: -
• Output Configuration: -
• Output Type: -
• Interface: -
• Voltage - Load: -
• Voltage - Supply (Vcc/Vdd): -
• Current - Output (Max): -
• Rds On (Typ): -
• Input Type: -
• Features: -
• Fault Protection: -
• Operating Temperature: -
• Package / Case: 20-DIP (0.300", 7.62mm)
• Supplier Device Package: 20-DIP

패키지: 20-DIP (0.300", 7.62mm)

RN2101MFV-L3XHF-CT

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A VESM

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 4.7 kOhms
• Resistor - Emitter Base (R2) (Ohms): 4.7 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250 MHz
• Power - Max: 150 mW
• Mounting Type: Surface Mount
• Package / Case: SOT-723
• Supplier Device Package: VESM

패키지: -

RN2106MFV-L3F-CT

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A VESM

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 4.7 kOhms
• Resistor - Emitter Base (R2) (Ohms): 47 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250 MHz
• Power - Max: 150 mW
• Mounting Type: Surface Mount
• Package / Case: SOT-723
• Supplier Device Package: VESM

패키지: -

HN1A01FE-Y-LXHF

Toshiba Semiconductor and Storage

AUTO AEC-Q PNP + PNP TR VCEO:-50

• Transistor Type: 2 PNP (Dual)
• Current - Collector (Ic) (Max): 150mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
• Power - Max: 100mW
• Frequency - Transition: 80MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: ES6

패키지: -

TC62D748CFNAG-CBHJ

Toshiba Semiconductor and Storage

IC

• Type: Linear
• Topology: Shift Register
• Internal Switch(s): No
• Number of Outputs: 16
• Voltage - Supply (Min): 3V
• Voltage - Supply (Max): 5.5V
• Voltage - Output: 17V
• Current - Output / Channel: 90mA
• Frequency: -
• Dimming: No
• Applications: LED Lighting
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-SSOP (0.154", 3.90mm Width)
• Supplier Device Package: 24-SSOP

패키지: -

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SSM6J825R-LF

Toshiba Semiconductor and Storage

P-CH MOSFET -30V, -20/+10V, -4A

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 492 pF @ 10 V
• Vgs (Max): +10V, -20V
• FET Feature: -
• Power Dissipation (Max): 1.5W (Ta)
• Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 10V
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Supplier Device Package: 6-TSOP-F
• Package / Case: 6-SMD, Flat Leads

패키지: -