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Toshiba Semiconductor and Storage 제품

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SSM3K17SU,LF(D
Toshiba Semiconductor and Storage

MOSFET N-CH 50V 100MA USM

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
재고7,488
hot SSM3K01T(TE85L,F)
Toshiba Semiconductor and Storage

MOSFET N-CH 30V 3.2A TSM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 152pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 1.25W (Ta)
  • Rds On (Max) @ Id, Vgs: 120 mOhm @ 1.6A, 4V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSM
  • Package / Case: TO-236-3, SC-59, SOT-23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고29,748
SSM3J108TU(TE85L)
Toshiba Semiconductor and Storage

MOSFET P-CH 20V 1.8A UFM

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 158 mOhm @ 800mA, 4V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: UFM
  • Package / Case: 3-SMD, Flat Leads
패키지: 3-SMD, Flat Leads
재고7,824
TK12A53D(STA4,Q,M)
Toshiba Semiconductor and Storage

MOSFET N-CH 525V 12A TO-220SIS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 525V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 580 mOhm @ 6A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
패키지: TO-220-3 Full Pack
재고7,808
hot TPH5R906NH,L1Q
Toshiba Semiconductor and Storage

MOSFET N CH 60V 28A 8-SOP ADV

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 300µA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta), 57W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 14A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5)
  • Package / Case: 8-PowerVDFN
패키지: 8-PowerVDFN
재고120,000
SSM6J512NU,LF
Toshiba Semiconductor and Storage

MOSFET P-CH 12V 10A UDFN6B

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 19.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 6V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 1.25W (Ta)
  • Rds On (Max) @ Id, Vgs: 16.2 mOhm @ 4A, 8V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-UDFNB (2x2)
  • Package / Case: 6-WDFN Exposed Pad
패키지: 6-WDFN Exposed Pad
재고29,202
RN1108ACT(TPL3)
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.1W CST3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 80mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: CST3
패키지: SC-101, SOT-883
재고4,960
TCR4DG28,LF
Toshiba Semiconductor and Storage

IC REG LINEAR 2.8V 420MA WCSP4E

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 2.8V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.22V @ 420mA
  • Current - Output: 420mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 68µA
  • PSRR: 70dB (1kHz)
  • Control Features: Enable
  • Protection Features: Over Current, Over Temperature, Short Circuit
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고102,018
TCR2LN10,LF
Toshiba Semiconductor and Storage

IC REG LINEAR 1V 200MA 4-SDFN

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 1V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: 200mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 2µA
  • PSRR: -
  • Control Features: Enable
  • Protection Features: Over Current
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-XFDFN Exposed Pad
  • Supplier Device Package: 4-SDFN (0.8x0.8)
패키지: 4-XFDFN Exposed Pad
재고87,360
TCV7100AF(TE12L,Q)
Toshiba Semiconductor and Storage

IC REG BUCK ADJ 2.5A SYNC 8SOPA

  • Function: Step-Down
  • Output Configuration: Positive
  • Topology: Buck
  • Output Type: Adjustable
  • Number of Outputs: 1
  • Voltage - Input (Min): 2.7V
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 0.8V
  • Voltage - Output (Max): 5.5V
  • Current - Output: 2.5A
  • Frequency - Switching: 800kHz
  • Synchronous Rectifier: Yes
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: 8-SOP Advance (5x5)
패키지: 8-PowerVDFN
재고6,592
TBD62083AFG,EL
Toshiba Semiconductor and Storage

IC LOAD SWITCH 8CH 0.5A 18SOP

  • Switch Type: General Purpose
  • Number of Outputs: 8
  • Ratio - Input:Output: 1:1
  • Output Configuration: Low Side
  • Output Type: N-Channel
  • Interface: On/Off
  • Voltage - Load: 50V (Max)
  • Voltage - Supply (Vcc/Vdd): Not Required
  • Current - Output (Max): -
  • Rds On (Typ): -
  • Input Type: Inverting
  • Features: -
  • Fault Protection: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 18-SOIC (0.276", 7.00mm Width)
  • Supplier Device Package: 18-SOP
패키지: 18-SOIC (0.276", 7.00mm Width)
재고3,232
TCK22923G,LF
Toshiba Semiconductor and Storage

IC PWR SWITCH P-CHAN 1:1 WCSP6E

  • Switch Type: General Purpose
  • Number of Outputs: 1
  • Ratio - Input:Output: 1:1
  • Output Configuration: High Side
  • Output Type: P-Channel
  • Interface: On/Off
  • Voltage - Load: 1.1 V ~ 5.5 V
  • Voltage - Supply (Vcc/Vdd): Not Required
  • Current - Output (Max): 2A
  • Rds On (Typ): 25 mOhm
  • Input Type: Non-Inverting
  • Features: Load Discharge, Slew Rate Controlled
  • Fault Protection: Reverse Current
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 6-UFBGA, WLCSP
  • Supplier Device Package: 6-WCSPE (0.80x1.2)
패키지: 6-UFBGA, WLCSP
재고49,254
TC7SZ02FU,LJ(CT
Toshiba Semiconductor and Storage

IC GATE NOR 1CH 2-INP SMV

  • Logic Type: NOR Gate
  • Number of Circuits: 1
  • Number of Inputs: 2
  • Features: -
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Current - Quiescent (Max): 2µA
  • Current - Output High, Low: 32mA, 32mA
  • Logic Level - Low: -
  • Logic Level - High: -
  • Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: USV
  • Package / Case: 5-TSSOP, SC-70-5, SOT-353
패키지: 5-TSSOP, SC-70-5, SOT-353
재고7,088
TC7SH125FE,LM
Toshiba Semiconductor and Storage

IC BUS BUFF DVR TRI-ST ESV

  • Logic Type: Buffer, Non-Inverting
  • Number of Elements: 1
  • Number of Bits per Element: 1
  • Input Type: -
  • Output Type: Push-Pull
  • Current - Output High, Low: 8mA, 8mA
  • Voltage - Supply: 2 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-553
  • Supplier Device Package: ESV
패키지: SOT-553
재고4,000
TMP86FS49BFG(ZHZ)
Toshiba Semiconductor and Storage

IC MCU 8BIT 60KB FLASH 64QFP

  • Core Processor: 870/C
  • Core Size: 8-Bit
  • Speed: 16MHz
  • Connectivity: I2C, SIO, UART/USART
  • Peripherals: LED, PWM, WDT
  • Number of I/O: 56
  • Program Memory Size: 60KB (60K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 2K x 8
  • Voltage - Supply (Vcc/Vdd): 2.7 V ~ 5.5 V
  • Data Converters: A/D 16x10b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: 64-BQFP
  • Supplier Device Package: 64-QFP (14x14)
패키지: 64-BQFP
재고3,120
TL1WK-LW1,LCS
Toshiba Semiconductor and Storage

LED LETERAS WARM WHT 3000K 2SMD

  • Color: White, Warm
  • CCT (K): 3000K
  • Flux @ 85°C, Current - Test: -
  • Flux @ 25°C, Current - Test: 19 lm (Typ)
  • Current - Test: 60mA
  • Voltage - Forward (Vf) (Typ): 2.8V
  • Lumens/Watt @ Current - Test: 112 lm/W
  • CRI (Color Rendering Index): 80
  • Current - Max: 180mA
  • Viewing Angle: 165°
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, No Lead
  • Supplier Device Package: SMD
  • Size / Dimension: 0.026" L x 0.026" W (0.65mm x 0.65mm)
  • Height - Seated (Max): 0.015" (0.39mm)
패키지: 2-SMD, No Lead
재고2,214
hot DF2B6.8M1ACT,L3F
Toshiba Semiconductor and Storage

TVS DIODE 5VWM 20VC CST2

  • Type: Steering (Rail to Rail)
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 5V (Max)
  • Voltage - Breakdown (Min): 6V
  • Voltage - Clamping (Max) @ Ipp: 20V
  • Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
  • Power - Peak Pulse: 50W
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: 0.3pF @ 1MHz
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-882
  • Supplier Device Package: CST2
패키지: SOD-882
재고263,280
TLP597A(F)
Toshiba Semiconductor and Storage

PHOTORELAY MOSFET OUT 3MA 6-DIP

  • Circuit: SPST-NO (1 Form A)
  • Output Type: AC, DC
  • On-State Resistance (Max): 2 Ohm
  • Load Current: 500mA
  • Voltage - Input: 1.15VDC
  • Voltage - Load: 0 ~ 60 V
  • Mounting Type: Through Hole
  • Termination Style: PC Pin
  • Package / Case: 6-DIP (0.300", 7.62mm)
  • Supplier Device Package: 6-DIP
  • Relay Type: Relay
패키지: 6-DIP (0.300", 7.62mm)
재고7,068
TLP331(BV,F)
Toshiba Semiconductor and Storage

OPTOISO 5KV TRANS W/BASE 6DIP

  • Number of Channels: 1
  • Voltage - Isolation: 5000Vrms
  • Current Transfer Ratio (Min): 200% @ 1mA
  • Current Transfer Ratio (Max): 1200% @ 1mA
  • Turn On / Turn Off Time (Typ): 10µs, 8µs
  • Rise / Fall Time (Typ): 8µs, 8µs
  • Input Type: DC
  • Output Type: Transistor with Base
  • Voltage - Output (Max): 55V
  • Current - Output / Channel: 50mA
  • Voltage - Forward (Vf) (Typ): 1.15V
  • Current - DC Forward (If) (Max): 50mA
  • Vce Saturation (Max): 400mV
  • Operating Temperature: -55°C ~ 100°C
  • Mounting Type: Through Hole
  • Package / Case: 6-DIP (0.300", 7.62mm)
  • Supplier Device Package: 6-DIP
패키지: 6-DIP (0.300", 7.62mm)
재고2,466
TLP292(TPL,E
Toshiba Semiconductor and Storage

OPTOISOLATOR 3.75KV TRANS 4-SO

  • Number of Channels: 1
  • Voltage - Isolation: 3750Vrms
  • Current Transfer Ratio (Min): 50% @ 5mA
  • Current Transfer Ratio (Max): 600% @ 5mA
  • Turn On / Turn Off Time (Typ): 3µs, 3µs
  • Rise / Fall Time (Typ): 2µs, 3µs
  • Input Type: AC, DC
  • Output Type: Transistor
  • Voltage - Output (Max): 80V
  • Current - Output / Channel: 50mA
  • Voltage - Forward (Vf) (Typ): 1.25V
  • Current - DC Forward (If) (Max): 50mA
  • Vce Saturation (Max): 300mV
  • Operating Temperature: -55°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-SOIC (0.179", 4.55mm)
  • Supplier Device Package: 4-SO
패키지: 4-SOIC (0.179", 4.55mm)
재고4,482
TCR3DF17,LM(CT
Toshiba Semiconductor and Storage

300MA LDO VOUT=1.7V DROPOUT=230M

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 1.7V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.47V @ 300mA
  • Current - Output: 300mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): -
  • PSRR: 70dB (1kHz)
  • Control Features: Enable
  • Protection Features: Inrush Current, Over Current, Over Temperature
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: SMV
패키지: SC-74A, SOT-753
재고6,928
TCR2EE335,LM(CT
Toshiba Semiconductor and Storage

200MA LDO VOUT3.35V DROPOUT180MV

  • Output Configuration: -
  • Output Type: -
  • Number of Regulators: -
  • Voltage - Input (Max): -
  • Voltage - Output (Min/Fixed): -
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: -
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: -
  • Protection Features: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고5,408
TDTA114Y-LM
Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SOT23

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 10 kOhms
  • Resistor - Emitter Base (R2) (Ohms): 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250 MHz
  • Power - Max: 320 mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
패키지: -
재고8,970
SSM6P39TU-LF
Toshiba Semiconductor and Storage

MOSFET 2P-CH 20V 1.5A UF6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate, 1.8V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 213mOhm @ 1A, 4V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
  • Power - Max: 500mW (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: UF6
패키지: -
재고26,805
RN1132MFV-L3F
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A VESM

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 200 kOhms
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: -
  • Power - Max: 150 mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: VESM
패키지: -
재고24,000
TPH1R306P1-L1Q
Toshiba Semiconductor and Storage

MOSFET N-CH 60V 100A 8SOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 960mW (Ta), 170W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.28mOhm @ 50A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5)
  • Package / Case: 8-PowerVDFN
패키지: -
재고24,423
TPHR7404PU-L1Q-M
Toshiba Semiconductor and Storage

40V UMOS9 S 0.65MOHM SOP-ADV(N)

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 400A (Ta), 150A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 210W (Tc)
  • Rds On (Max) @ Id, Vgs: 0.74mOhm @ 50A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5)
  • Package / Case: 8-PowerVDFN
패키지: -
Request a Quote
TB9045FNG-120-EL
Toshiba Semiconductor and Storage

AUTOMOTIVE VOLTAGE REGULATOR

  • Applications: Power Supply, Automotive Applications
  • Voltage - Input: -
  • Number of Outputs: 3
  • Voltage - Output: 6V
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad
  • Supplier Device Package: 48-HTSSOP
패키지: -
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