페이지 92 - Toshiba Semiconductor and Storage 제품 | Heisener Electronics
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Toshiba Semiconductor and Storage 제품

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페이지  92/163
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2SJ377(TE16R1,NQ)
Toshiba Semiconductor and Storage

MOSFET P-CH 60V 5A PW-MOLD

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 20W (Tc)
  • Rds On (Max) @ Id, Vgs: 190 mOhm @ 2.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PW-MOLD
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고4,928
TPCA8064-H,LQ(CM
Toshiba Semiconductor and Storage

MOSFET N-CH 30V 20A 8SOP-ADV

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta), 32W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 10A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5)
  • Package / Case: 8-PowerVDFN
패키지: 8-PowerVDFN
재고6,288
TK12E80W,S1X
Toshiba Semiconductor and Storage

MOSFET N-CH 800V 11.5A TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 570µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 300V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 165W (Tc)
  • Rds On (Max) @ Id, Vgs: 450 mOhm @ 5.8A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
패키지: TO-220-3
재고8,064
2SC2229-Y(SAN2,F,M
Toshiba Semiconductor and Storage

TRANS NPN 50MA 150V TO226-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 150V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
  • Power - Max: 800mW
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
패키지: TO-226-3, TO-92-3 Long Body
재고2,192
2SA1163-GR,LF
Toshiba Semiconductor and Storage

TRANS PNP 120V 0.1A SMINI

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
  • Power - Max: 150mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
패키지: TO-236-3, SC-59, SOT-23-3
재고67,398
RN2968FE(TE85L,F)
Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.1W ES6

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
패키지: SOT-563, SOT-666
재고3,440
RN2905FE,LF(CB
Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.1W ES6

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
패키지: SOT-563, SOT-666
재고7,392
RN2605(TE85L,F)
Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.3W SM6

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: SM6
패키지: SC-74, SOT-457
재고2,016
CLH01(TE16R,Q)
Toshiba Semiconductor and Storage

DIODE GEN PURP 200V 3A L-FLAT

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 3A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 0.98V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: L-FLAT?
  • Supplier Device Package: L-FLAT? (4x5.5)
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: L-FLAT?
재고6,736
TCR2EF27,LM(CT
Toshiba Semiconductor and Storage

IC REG LINEAR 2.7V 200MA SMV

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 2.7V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: 200mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 60µA
  • PSRR: 73dB (1kHz)
  • Control Features: Enable
  • Protection Features: Over Current
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: SMV
패키지: SC-74A, SOT-753
재고6,224
TCR2EF10,LM(CT
Toshiba Semiconductor and Storage

IC REG LINEAR 1V 200MA SMV

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 1V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: 200mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 60µA
  • PSRR: 73dB (1kHz)
  • Control Features: Enable
  • Protection Features: Over Current
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: SMV
패키지: SC-74A, SOT-753
재고3,568
TA7291SG(O,J)
Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 9SIP

  • Motor Type - Stepper: -
  • Motor Type - AC, DC: Brushed DC
  • Function: Driver - Fully Integrated, Control and Power Stage
  • Output Configuration: Half Bridge (2)
  • Interface: Parallel
  • Technology: Bipolar
  • Step Resolution: -
  • Applications: General Purpose
  • Current - Output: 400mA
  • Voltage - Supply: 4.5 V ~ 20 V
  • Voltage - Load: 0 V ~ 20 V
  • Operating Temperature: -30°C ~ 75°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 9-SIP
  • Supplier Device Package: 9-SIP
패키지: 9-SIP
재고5,776
TA7291P(O)
Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 10HSIP

  • Motor Type - Stepper: -
  • Motor Type - AC, DC: Brushed DC
  • Function: Driver - Fully Integrated, Control and Power Stage
  • Output Configuration: Half Bridge (2)
  • Interface: Parallel
  • Technology: Bipolar
  • Step Resolution: -
  • Applications: General Purpose
  • Current - Output: 1A
  • Voltage - Supply: 4.5 V ~ 20 V
  • Voltage - Load: 0 V ~ 20 V
  • Operating Temperature: -30°C ~ 75°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 10-SIP, Exposed Tab
  • Supplier Device Package: 10-HSIP
패키지: 10-SIP, Exposed Tab
재고4,000
TB6569FTG,8,EL
Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 32VQFN

  • Motor Type - Stepper: -
  • Motor Type - AC, DC: Brushed DC
  • Function: Driver - Fully Integrated, Control and Power Stage
  • Output Configuration: Half Bridge (2)
  • Interface: Parallel, PWM
  • Technology: Bi-CMOS
  • Step Resolution: -
  • Applications: General Purpose
  • Current - Output: 1.5A
  • Voltage - Supply: 10 V ~ 45 V
  • Voltage - Load: 10 V ~ 45 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 32-VFQFN Exposed Pad
  • Supplier Device Package: 32-VQFN (5x5)
패키지: 32-VFQFN Exposed Pad
재고21,996
TC74HC123AF(ELNE,F
Toshiba Semiconductor and Storage

IC MULTIVIBRATR 22NS 16SOP

  • Logic Type: Monostable
  • Independent Circuits: 2
  • Schmitt Trigger Input: Yes
  • Propagation Delay: 22ns
  • Current - Output High, Low: 5.2mA, 5.2mA
  • Voltage - Supply: 2 V ~ 6 V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.209", 5.30mm Width)
  • Supplier Device Package: 16-SOP
패키지: 16-SOIC (0.209", 5.30mm Width)
재고6,048
TJM35420XLQ,EL
Toshiba Semiconductor and Storage

TRANSFERJET WIRELESS TRANSCEIVER

  • Type: -
  • RF Family/Standard: -
  • Protocol: -
  • Modulation: -
  • Frequency: -
  • Data Rate (Max): -
  • Power - Output: -
  • Sensitivity: -
  • Memory Size: -
  • Serial Interfaces: -
  • GPIO: -
  • Voltage - Supply: -
  • Current - Receiving: -
  • Current - Transmitting: -
  • Operating Temperature: -
  • Package / Case: Module
패키지: Module
재고4,194
TLP292-4(LGBTR,E
Toshiba Semiconductor and Storage

OPTOISOLATOR 3.75KV TRANS SO16

  • Number of Channels: 4
  • Voltage - Isolation: 3750Vrms
  • Current Transfer Ratio (Min): 100% @ 500µA
  • Current Transfer Ratio (Max): 600% @ 500µA
  • Turn On / Turn Off Time (Typ): 3µs, 3µs
  • Rise / Fall Time (Typ): 2µs, 3µs
  • Input Type: AC, DC
  • Output Type: Transistor
  • Voltage - Output (Max): 80V
  • Current - Output / Channel: 50mA
  • Voltage - Forward (Vf) (Typ): 1.25V
  • Current - DC Forward (If) (Max): 50mA
  • Vce Saturation (Max): 300mV
  • Operating Temperature: -55°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.179", 4.55mm Width)
  • Supplier Device Package: 16-SO
패키지: 16-SOIC (0.179", 4.55mm Width)
재고6,876
hot 74HC4052D
Toshiba Semiconductor and Storage

IC MUX 2 X 4:1 4 OHM 16SOIC

  • Switch Circuit: SP4T
  • Multiplexer/Demultiplexer Circuit: 4:1
  • Number of Circuits: 2
  • On-State Resistance (Max): 130 Ohm
  • Channel-to-Channel Matching (ΔRon): 4 Ohm
  • Voltage - Supply, Single (V+): 2 V ~ 6 V
  • Voltage - Supply, Dual (V±): -
  • Switch Time (Ton, Toff) (Max): 34ns, 32ns
  • -3db Bandwidth: -
  • Charge Injection: -
  • Channel Capacitance (CS(off), CD(off)): 10pF
  • Current - Leakage (IS(off)) (Max): 1µA
  • Crosstalk: -50dB @ 1MHz
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
패키지: 16-SOIC (0.154", 3.90mm Width)
재고5,056
hot 74HC4051D
Toshiba Semiconductor and Storage

IC MUX 8:1 4 OHM 16SOIC

  • Switch Circuit: -
  • Multiplexer/Demultiplexer Circuit: 8:1
  • Number of Circuits: 1
  • On-State Resistance (Max): 130 Ohm
  • Channel-to-Channel Matching (ΔRon): 4 Ohm
  • Voltage - Supply, Single (V+): 2 V ~ 6 V
  • Voltage - Supply, Dual (V±): -
  • Switch Time (Ton, Toff) (Max): 34ns, 32ns
  • -3db Bandwidth: -
  • Charge Injection: -
  • Channel Capacitance (CS(off), CD(off)): 10pF
  • Current - Leakage (IS(off)) (Max): 1µA
  • Crosstalk: -50dB @ 1MHz
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
패키지: 16-SOIC (0.154", 3.90mm Width)
재고5,664
TB6613FTG,8,EL
Toshiba Semiconductor and Storage

8 H-BRIDGE DRIVER, CAN BE CONFIG

  • Motor Type - Stepper: -
  • Motor Type - AC, DC: -
  • Function: -
  • Output Configuration: -
  • Interface: -
  • Technology: -
  • Step Resolution: -
  • Applications: -
  • Current - Output: -
  • Voltage - Supply: -
  • Voltage - Load: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고2,528
TCR2EF32,LM(CT
Toshiba Semiconductor and Storage

200MA LDO VOUT3.2V DROPOUT180MV

  • Output Configuration: -
  • Output Type: -
  • Number of Regulators: -
  • Voltage - Input (Max): -
  • Voltage - Output (Min/Fixed): -
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: -
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: -
  • Protection Features: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고2,192
XPN6R706NC-L1XHQ
Toshiba Semiconductor and Storage

MOSFET N-CH 60V 40A 8TSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 300µA
  • Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 840mW (Ta), 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.7mOhm @ 20A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
  • Package / Case: 8-PowerVDFN
패키지: -
재고87,855
7UL1T86FU-LF
Toshiba Semiconductor and Storage

IC GATE XOR 1CH 2-INP USV

  • Logic Type: XOR (Exclusive OR)
  • Number of Circuits: 1
  • Number of Inputs: 2
  • Features: -
  • Voltage - Supply: 2.3V ~ 3.6V
  • Current - Quiescent (Max): 1 µA
  • Current - Output High, Low: 8mA, 8mA
  • Logic Level - Low: 0.1V ~ 0.4V
  • Logic Level - High: 2V ~ 2.48V
  • Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 15pF
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: USV
  • Package / Case: 5-TSSOP, SC-70-5, SOT-353
패키지: -
재고17,625
RN2105-LF-CT
Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SSM

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 2.2 kOhms
  • Resistor - Emitter Base (R2) (Ohms): 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200 MHz
  • Power - Max: 100 mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SSM
패키지: -
재고35,895
TK22V65X5-LQ
Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR DFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1.1mA
  • Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 180W (Tc)
  • Rds On (Max) @ Id, Vgs: 170mOhm @ 11A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 4-DFN-EP (8x8)
  • Package / Case: 4-VSFN Exposed Pad
패키지: -
재고7,500
7UL1G07FU-LF
Toshiba Semiconductor and Storage

IC BUFFER NON-INVERT 3.6V USV

  • Logic Type: Buffer, Non-Inverting
  • Number of Elements: 1
  • Number of Bits per Element: 1
  • Input Type: -
  • Output Type: Open Drain
  • Current - Output High, Low: -, 8mA
  • Voltage - Supply: 0.9V ~ 3.6V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 5-TSSOP, SC-70-5, SOT-353
  • Supplier Device Package: USV
패키지: -
재고34,125
TK90S06N1L-LXHQ
Toshiba Semiconductor and Storage

MOSFET N-CH 60V 90A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 157W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.3mOhm @ 45A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK+
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
패키지: -
재고28,932
CMH05-TE12L-Q-M
Toshiba Semiconductor and Storage

DIODE GEN PURP 400V 1A M-FLAT

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 100 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: M-FLAT (2.4x3.8)
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: -
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