Toshiba Semiconductor and Storage 제품

TK55D10J1(Q)

Toshiba Semiconductor and Storage

MOSFET N-CH 100V 55A TO220W

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 55A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.3V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5700pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 140W (Tc)
• Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 27A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220(W)
• Package / Case: TO-220-3

패키지: TO-220-3

TPCA8055-H,LQ(M

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 56A 8SOP-ADV

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 56A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.3V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 7700pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.6W (Ta), 70W (Tc)
• Rds On (Max) @ Id, Vgs: 1.9 mOhm @ 28A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOP Advance (5x5)
• Package / Case: 8-PowerVDFN

패키지: 8-PowerVDFN

TPCA8065-H,LQ(S

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 16A 8SOP-ADV

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.3V @ 200µA
• Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.6W (Ta), 25W (Tc)
• Rds On (Max) @ Id, Vgs: 11.4 mOhm @ 8A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOP Advance (5x5)
• Package / Case: 8-PowerVDFN

패키지: 8-PowerVDFN

TJ60S04M3L(T6L1,NQ

Toshiba Semiconductor and Storage

MOSFET P-CH 40V 60A DPAK-3

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6510pF @ 10V
• Vgs (Max): +10V, -20V
• FET Feature: -
• Power Dissipation (Max): 90W (Tc)
• Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 30A, 10V
• Operating Temperature: 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DPAK+
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

TK20A60W,S5VX

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 20A TO220SIS

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.7V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 300V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 45W (Tc)
• Rds On (Max) @ Id, Vgs: 155 mOhm @ 10A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220SIS
• Package / Case: TO-220-3 Full Pack, Isolated Tab

패키지: TO-220-3 Full Pack, Isolated Tab

2SC2712-BL,LF

Toshiba Semiconductor and Storage

TRANSISTOR NPN 50V 150MA S-MINI

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 150mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
• Power - Max: 150mW
• Frequency - Transition: 80MHz
• Operating Temperature: 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: S-Mini

패키지: TO-236-3, SC-59, SOT-23-3

1SS301SU,LF

Toshiba Semiconductor and Storage

DIODE ARRAY GP 80V 100MA SC70

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 80V
• Current - Average Rectified (Io) (per Diode): 100mA
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 4ns
• Current - Reverse Leakage @ Vr: 500nA @ 80V
• Operating Temperature - Junction: 125°C (Max)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SC-70

패키지: SC-70, SOT-323

TA78DS05CP(MBS1,FM

Toshiba Semiconductor and Storage

IC REG LINEAR 30MA LSTM

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 30mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: LSTM

패키지: TO-226-3, TO-92-3 Long Body

TA58M08S(LS2FJT,AQ

Toshiba Semiconductor and Storage

IC REG LINEAR 500MA LSTM

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 500mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -40°C ~ 105°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: LSTM

패키지: TO-220-3 Full Pack

TCV7106FN(TE85L,F)

Toshiba Semiconductor and Storage

IC REG BUCK ADJ 2A SYNC 8SON

• Function: Step-Down
• Output Configuration: Positive
• Topology: Buck
• Output Type: Adjustable
• Number of Outputs: 1
• Voltage - Input (Min): 2.7V
• Voltage - Input (Max): 5.6V
• Voltage - Output (Min/Fixed): 0.8V
• Voltage - Output (Max): 5.6V
• Current - Output: 2A
• Frequency - Switching: 550kHz
• Synchronous Rectifier: Both
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SMD, Flat Lead
• Supplier Device Package: PS-8 (2.9x2.4)

패키지: 8-SMD, Flat Lead

TC7QPB9307FT(EL)

Toshiba Semiconductor and Storage

IC BUS SWITCH LV/LP 4B 14-TSSOP

• Type: Bus Switch
• Circuit: 4 x 1:1
• Independent Circuits: 1
• Current - Output High, Low: -
• Voltage Supply Source: Dual Supply
• Voltage - Supply: 1.65 V ~ 5 V, 2.3 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 14-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 14-TSSOP

패키지: 14-TSSOP (0.173", 4.40mm Width)

74HC595D(BJ)

Toshiba Semiconductor and Storage

IC SHIFT REGISTER 8BIT 16SOP

• Logic Type: Shift Register
• Output Type: Tri-State
• Number of Elements: 1
• Number of Bits per Element: 8
• Function: Serial to Parallel
• Voltage - Supply: 2 V ~ 6 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 16-SOP

패키지: 16-SOIC (0.154", 3.90mm Width)

TC74VHCT04AFTEL

Toshiba Semiconductor and Storage

IC INVERTER HEX 14-TSSOP

• Logic Type: Inverter
• Number of Circuits: 6
• Number of Inputs: 6
• Features: -
• Voltage - Supply: 4.5 V ~ 5.5 V
• Current - Quiescent (Max): 2µA
• Current - Output High, Low: 8mA, 8mA
• Logic Level - Low: 0.8V
• Logic Level - High: 2V
• Max Propagation Delay @ V, Max CL: 7.7ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: 14-TSSOP
• Package / Case: 14-TSSOP (0.173", 4.40mm Width)

패키지: 14-TSSOP (0.173", 4.40mm Width)

TL1WK-LL1,LCS

Toshiba Semiconductor and Storage

LED LETERAS WARM WHT 2700K 2SMD

• Color: White, Warm
• CCT (K): 2700K
• Flux @ 85°C, Current - Test: -
• Flux @ 25°C, Current - Test: 19 lm (Typ)
• Current - Test: 60mA
• Voltage - Forward (Vf) (Typ): 2.8V
• Lumens/Watt @ Current - Test: 110 lm/W
• CRI (Color Rendering Index): 80
• Current - Max: 180mA
• Viewing Angle: 165°
• Mounting Type: Surface Mount
• Package / Case: 2-SMD, No Lead
• Supplier Device Package: SMD
• Size / Dimension: 0.026" L x 0.026" W (0.65mm x 0.65mm)
• Height - Seated (Max): 0.015" (0.39mm)

패키지: 2-SMD, No Lead

TLP716(F)

Toshiba Semiconductor and Storage

OPTOISO 5KV PUSH PULL 6DIP GW

• Number of Channels: 1
• Inputs - Side 1/Side 2: 1/0
• Voltage - Isolation: 5000Vrms
• Common Mode Transient Immunity (Min): 10kV/µs
• Input Type: DC
• Output Type: Push-Pull, Totem Pole
• Current - Output / Channel: 10mA
• Data Rate: 15MBd
• Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
• Rise / Fall Time (Typ): 15ns, 15ns
• Voltage - Forward (Vf) (Typ): 1.65V
• Current - DC Forward (If) (Max): 20mA
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 100°C
• Mounting Type: Surface Mount
• Package / Case: 6-SOIC (0.268", 6.80mm Width)
• Supplier Device Package: 6-SDIP Gull Wing

패키지: 6-SOIC (0.268", 6.80mm Width)

TLP2105(F)

Toshiba Semiconductor and Storage

OPTOISO 2.5KV 2CH PUSH PULL 8SO

• Number of Channels: 2
• Inputs - Side 1/Side 2: 2/0
• Voltage - Isolation: 2500Vrms
• Common Mode Transient Immunity (Min): 10kV/µs
• Input Type: DC
• Output Type: Push-Pull, Totem Pole
• Current - Output / Channel: 25mA
• Data Rate: 5Mbps
• Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
• Rise / Fall Time (Typ): 30ns, 30ns
• Voltage - Forward (Vf) (Typ): 1.65V
• Current - DC Forward (If) (Max): 20mA
• Voltage - Supply: 4.5 V ~ 20 V
• Operating Temperature: -40°C ~ 100°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

TLP104(TPL,E

Toshiba Semiconductor and Storage

OPTOISO 3.75KV OPEN COLL SO6-5

• Number of Channels: 1
• Inputs - Side 1/Side 2: 1/0
• Voltage - Isolation: 3750Vrms
• Common Mode Transient Immunity (Min): 15kV/µs
• Input Type: DC
• Output Type: Open Collector
• Current - Output / Channel: 8mA
• Data Rate: 1Mbps
• Propagation Delay tpLH / tpHL (Max): 550ns, 400ns
• Rise / Fall Time (Typ): -
• Voltage - Forward (Vf) (Typ): 1.61V
• Current - DC Forward (If) (Max): 25mA
• Voltage - Supply: 4.5 V ~ 30 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 6-SOIC (0.179", 4.55mm Width) 5 Leads
• Supplier Device Package: 6-SO, 5 Lead

패키지: 6-SOIC (0.179", 4.55mm Width) 5 Leads

TLP251(F)

Toshiba Semiconductor and Storage

OPTOISO 2.5KV GATE DRIVER 8DIP

• Technology: Optical Coupling
• Number of Channels: 1
• Voltage - Isolation: 2500Vrms
• Common Mode Transient Immunity (Min): 5kV/µs
• Propagation Delay tpLH / tpHL (Max): 1µs, 1µs
• Pulse Width Distortion (Max): -
• Rise / Fall Time (Typ): -
• Current - Output High, Low: 100mA, 100mA
• Current - Peak Output: 400mA
• Voltage - Forward (Vf) (Typ): 1.6V
• Current - DC Forward (If) (Max): 20mA
• Voltage - Supply: 10 V ~ 30 V
• Operating Temperature: -20°C ~ 85°C
• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm)
• Supplier Device Package: 8-DIP
• Approvals: UR

패키지: 8-DIP (0.300", 7.62mm)

74HCT245D

Toshiba Semiconductor and Storage

IC TXRX NON-INVERT 5.5V 20SOIC

• Logic Type: Transceiver, Non-Inverting
• Number of Elements: 1
• Number of Bits per Element: 8
• Input Type: -
• Output Type: 3-State
• Current - Output High, Low: 6mA, 6mA
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 20-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 20-SOIC

패키지: 20-SOIC (0.295", 7.50mm Width)

TCR2LF19,LM(CT

Toshiba Semiconductor and Storage

LDO REGULATORS VOUT: 1.9V IOUT:2

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 1.9V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.62V @ 150mA
• Current - Output: 200mA
• Current - Quiescent (Iq): 2µA
• Current - Supply (Max): -
• PSRR: -
• Control Features: Enable
• Protection Features: Over Current
• Operating Temperature: -40°C ~ 85°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SMV

패키지: SC-74A, SOT-753

HN1B04FE-Y-LXHF

Toshiba Semiconductor and Storage

AUTO AEC-Q PNP + NPN TR VCEO:-50

• Transistor Type: 1 NPN, 1 PNP
• Current - Collector (Ic) (Max): 150mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
• Power - Max: 100mW
• Frequency - Transition: 80MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: ES6

패키지: -

TB67S112PG-HJ

Toshiba Semiconductor and Storage

50V/1.5A 2-IN-1 SOLENOID DRIVER.

• Motor Type - Stepper: Unipolar
• Motor Type - AC, DC: -
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge
• Interface: Parallel
• Technology: Power MOSFET
• Step Resolution: -
• Applications: General Purpose
• Current - Output: 1.5A
• Voltage - Supply: 2V ~ 5.5V
• Voltage - Load: 4.5V ~ 47V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Through Hole
• Package / Case: 16-DIP (0.300", 7.62mm)
• Supplier Device Package: 16-DIP

패키지: -

TK3R2A08QM-S4X

Toshiba Semiconductor and Storage

UMOS10 TO-220SIS 80V 3.2MOHM

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 80 V
• Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.5V @ 1.3mA
• Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 7670 pF @ 40 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 45W (Tc)
• Rds On (Max) @ Id, Vgs: 3.2mOhm @ 46A, 10V
• Operating Temperature: 175°C
• Mounting Type: Through Hole
• Supplier Device Package: TO-220SIS
• Package / Case: TO-220-3 Full Pack

패키지: -

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TRS16N65FB-S1Q

Toshiba Semiconductor and Storage

DIODE ARR SIC SCHOTT 650V TO247

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max): 650 V
• Current - Average Rectified (Io) (per Diode): 8A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0 ns
• Current - Reverse Leakage @ Vr: 40 µA @ 650 V
• Operating Temperature - Junction: 175°C
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247

패키지: -

SSM3K361TU-LXHF

Toshiba Semiconductor and Storage

AECQ MOSFET NCH 100V 3.5A SOT323

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1W (Ta)
• Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
• Operating Temperature: 175°C
• Mounting Type: Surface Mount
• Supplier Device Package: UFM
• Package / Case: 3-SMD, Flat Leads

패키지: -

TK33S10N1L-LXHQ

Toshiba Semiconductor and Storage

MOSFET N-CH 100V 33A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 500µA
• Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 10 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 125W (Tc)
• Rds On (Max) @ Id, Vgs: 9.7mOhm @ 16.5A, 10V
• Operating Temperature: 175°C
• Mounting Type: Surface Mount
• Supplier Device Package: DPAK+
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

패키지: -

7UL3G34FK-LF-B

Toshiba Semiconductor and Storage

L-MOS LVP IC SOT-765(US8) VCC:0.

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 3
• Number of Bits per Element: 1
• Input Type: -
• Output Type: -
• Current - Output High, Low: 8mA, 8mA
• Voltage - Supply: 0.9V ~ 3.6V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-VFSOP (0.091", 2.30mm Width)
• Supplier Device Package: US8

패키지: -

TK5A90E-S4X

Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR TO-

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 900 V
• Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 450µA
• Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 40W (Tc)
• Rds On (Max) @ Id, Vgs: 3.1Ohm @ 2.3A, 10V
• Operating Temperature: 150°C
• Mounting Type: Through Hole
• Supplier Device Package: TO-220SIS
• Package / Case: TO-220-3 Full Pack

패키지: -