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TPH3206LXB
Transphorm

650V, 150M

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
재고3,024
TPH3208LDG
Transphorm

GAN FET 650V 20A PQFN88

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V
  • Vgs(th) (Max) @ Id: 2.6V @ 300µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 400V
  • Vgs (Max): ±18V
  • FET Feature: -
  • Power Dissipation (Max): 96W (Tc)
  • Rds On (Max) @ Id, Vgs: 130 mOhm @ 13A, 8V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PQFN (8x8)
  • Package / Case: 3-PowerDFN
패키지: 3-PowerDFN
재고10,308
TPH3206LDB
Transphorm

MOSFET N-CH GANFET 650V 16A PQFN

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V
  • Vgs(th) (Max) @ Id: 2.6V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 480V
  • Vgs (Max): ±18V
  • FET Feature: -
  • Power Dissipation (Max): 81W (Tc)
  • Rds On (Max) @ Id, Vgs: 180 mOhm @ 10A, 8V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PQFN (8x8)
  • Package / Case: 4-PowerDFN
패키지: 4-PowerDFN
재고7,520
TPH3202LS
Transphorm

GAN FET 600V 9A PQFN88

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 480V
  • Vgs (Max): ±18V
  • FET Feature: -
  • Power Dissipation (Max): 65W (Tc)
  • Rds On (Max) @ Id, Vgs: 350 mOhm @ 5.5A, 8V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PQFN (8x8)
  • Package / Case: 3-PowerDFN
패키지: 3-PowerDFN
재고6,684
TPH3206PSB
Transphorm

MOSFET N-CH GANFET 650V TO220AB

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V
  • Vgs(th) (Max) @ Id: 2.6V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 480V
  • Vgs (Max): ±18V
  • FET Feature: -
  • Power Dissipation (Max): 81W (Tc)
  • Rds On (Max) @ Id, Vgs: 180 mOhm @ 10A, 8V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
패키지: TO-220-3
재고7,152
TPH3208LS
Transphorm

GAN FET 650V 20A PQFN88

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V
  • Vgs(th) (Max) @ Id: 2.6V @ 300µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 400V
  • Vgs (Max): ±18V
  • FET Feature: -
  • Power Dissipation (Max): 96W (Tc)
  • Rds On (Max) @ Id, Vgs: 130 mOhm @ 13A, 8V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PQFN (8x8)
  • Package / Case: 3-PowerDFN
패키지: 3-PowerDFN
재고7,536
TPH3206PD
Transphorm

GAN FET 600V 17A TO220

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V
  • Vgs(th) (Max) @ Id: 2.6V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 480V
  • Vgs (Max): ±18V
  • FET Feature: -
  • Power Dissipation (Max): 96W (Tc)
  • Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 8V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
패키지: TO-220-3
재고6,912
TPH3206PS
Transphorm

GAN FET 600V 17A TO220

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V
  • Vgs(th) (Max) @ Id: 2.6V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 480V
  • Vgs (Max): ±18V
  • FET Feature: -
  • Power Dissipation (Max): 96W (Tc)
  • Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 8V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
패키지: TO-220-3
재고8,664
TPH3202PD
Transphorm

GAN FET 600V 9A TO220

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 480V
  • Vgs (Max): ±18V
  • FET Feature: -
  • Power Dissipation (Max): 65W (Tc)
  • Rds On (Max) @ Id, Vgs: 350 mOhm @ 5.5A, 8V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
패키지: TO-220-3
재고6,060
TPD3215M
Transphorm

CASCODE GAN HB 600V 70A MODULE

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
  • Rds On (Max) @ Id, Vgs: 34 mOhm @ 30A, 8V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 100V
  • Power - Max: 470W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: Module
재고5,616
TP65H050G4WS
Transphorm

650 V 34 A GAN FET

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.8V @ 700µA
  • Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 119W (Tc)
  • Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
패키지: -
재고639
TP65H050G4YS
Transphorm

650 V 35 A GAN FET HIGH VOLTAGE

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.8V @ 700µA
  • Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 132W (Tc)
  • Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4L
  • Package / Case: TO-247-4
패키지: -
재고1,296
TP65H050G4BS
Transphorm

650 V 34 A GAN FET

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.8V @ 700µA
  • Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 119W (Tc)
  • Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
패키지: -
재고687
TP90H050WS
Transphorm

GANFET N-CH 900V 34A TO247-3

  • FET Type: N-Channel
  • Technology: GaNFET (Cascode Gallium Nitride FET)
  • Drain to Source Voltage (Vdss): 900 V
  • Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.4V @ 700µA
  • Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 600 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 119W (Tc)
  • Rds On (Max) @ Id, Vgs: 63mOhm @ 22A, 10V
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
패키지: -
재고321
TP65H035WSQA
Transphorm

GANFET N-CH 650V 47.2A TO247-3

  • FET Type: N-Channel
  • Technology: GaNFET (Cascode Gallium Nitride FET)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 47.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 187W (Tc)
  • Rds On (Max) @ Id, Vgs: 41mOhm @ 32A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
패키지: -
재고570
TP65H070G4LSG-TR
Transphorm

GANFET N-CH 650V 29A QFN8X8

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.8V @ 700µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 96W (Tc)
  • Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-PQFN (8x8)
  • Package / Case: 3-PowerTDFN
패키지: -
재고8,118
TP65H150G4PS
Transphorm

GAN FET N-CH 650V TO-220

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.8V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 598 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 180mOhm @ 8.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
패키지: -
재고9,321
TP65H050WSQA
Transphorm

GANFET N-CH 650V 36A TO247-3

  • FET Type: N-Channel
  • Technology: GaNFET (Cascode Gallium Nitride FET)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.8V @ 700µA
  • Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
패키지: -
재고129
TPH3206LDG-TR
Transphorm

GANFET N-CH 600V 17A 3PQFN

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V
  • Vgs(th) (Max) @ Id: 2.6V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 480 V
  • Vgs (Max): ±18V
  • FET Feature: -
  • Power Dissipation (Max): 96W (Tc)
  • Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 8V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-PQFN (8x8)
  • Package / Case: 3-PowerDFN
패키지: -
Request a Quote
TP65H070G4QS-TR
Transphorm

650 V 29 A GAN FET

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.8V @ 700µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 96W (Tc)
  • Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TOLL
  • Package / Case: 8-PowerSFN
패키지: -
Request a Quote
TP90H180PS
Transphorm

GANFET N-CH 900V 15A TO220AB

  • FET Type: N-Channel
  • Technology: GaNFET (Cascode Gallium Nitride FET)
  • Drain to Source Voltage (Vdss): 900 V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 8 V
  • Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 600 V
  • Vgs (Max): ±18V
  • FET Feature: -
  • Power Dissipation (Max): 78W (Tc)
  • Rds On (Max) @ Id, Vgs: 205mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
패키지: -
Request a Quote
TPH3206LSGB
Transphorm

GANFET N-CH 650V 16A 3PQFN

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V
  • Vgs(th) (Max) @ Id: 2.6V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 480 V
  • Vgs (Max): ±18V
  • FET Feature: -
  • Power Dissipation (Max): 81W (Tc)
  • Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 8V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-PQFN (8x8)
  • Package / Case: 3-PowerDFN
패키지: -
Request a Quote
TP65H150G4LSG-TR
Transphorm

650 V 13 A GAN FET

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.8V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 598 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 52W (Tc)
  • Rds On (Max) @ Id, Vgs: 180mOhm @ 8.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-PQFN (8x8)
  • Package / Case: 3-PowerTDFN
패키지: -
Request a Quote
TP65H480G4JSG
Transphorm

MOSFET 650V, 480mOhm

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V
  • Vgs(th) (Max) @ Id: 2.8V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 8 V
  • Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V
  • Vgs (Max): ±18V
  • FET Feature: -
  • Power Dissipation (Max): 13.2W (Tc)
  • Rds On (Max) @ Id, Vgs: 560mOhm @ 3.4A, 8V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-PQFN (5x6)
  • Package / Case: 3-PowerTDFN
패키지: -
Request a Quote
TP65H035G4WSQA
Transphorm

650 V 46.5 GAN FET

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 47.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.8V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 187W (Tc)
  • Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
패키지: -
재고843
TP65H035G4WS
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GANFET N-CH 650V 46.5A TO247-3

  • FET Type: N-Channel
  • Technology: GaNFET (Cascode Gallium Nitride FET)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 46.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.8V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 0 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 156W (Tc)
  • Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
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TP65H035G4QS
Transphorm

650 V 46.5 A GAN FET HIGH VOLTAG

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 46.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.8V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 156W (Tc)
  • Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TOLL
  • Package / Case: 8-PowerSFN
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TPH3208LSG
Transphorm

GANFET N-CH 650V 20A 3PQFN

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 300µA
  • Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 8 V
  • Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V
  • Vgs (Max): ±18V
  • FET Feature: -
  • Power Dissipation (Max): 96W (Tc)
  • Rds On (Max) @ Id, Vgs: 130mOhm @ 14A, 8V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-PQFN (8x8)
  • Package / Case: 3-PowerDFN
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