페이지 265 - Vishay Semiconductor Diodes Division 제품 - 다이오드 - 정류기 - 단일 | Heisener Electronics
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Vishay Semiconductor Diodes Division 제품 - 다이오드 - 정류기 - 단일

기록 10,373
페이지  265/371
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
SD103N10S10PV
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 110A DO205

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 110A
  • Voltage - Forward (Vf) (Max) @ If: 2.23V @ 345A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1µs
  • Current - Reverse Leakage @ Vr: 35mA @ 1000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AC, DO-30, Stud
  • Supplier Device Package: DO-205AC (DO-30)
  • Operating Temperature - Junction: -40°C ~ 125°C
패키지: DO-205AC, DO-30, Stud
재고2,608
1000V
110A
2.23V @ 345A
Standard Recovery >500ns, > 200mA (Io)
1µs
35mA @ 1000V
-
Chassis, Stud Mount
DO-205AC, DO-30, Stud
DO-205AC (DO-30)
-40°C ~ 125°C
T70HFL10S02
Vishay Semiconductor Diodes Division

DIODE MODULE 100V 70A D-55

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 70A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 200ns
  • Current - Reverse Leakage @ Vr: 100µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: D-55 T-Module
  • Supplier Device Package: D-55
  • Operating Temperature - Junction: -
패키지: D-55 T-Module
재고4,416
100V
70A
-
Fast Recovery =< 500ns, > 200mA (Io)
200ns
100µA @ 100V
-
Chassis Mount
D-55 T-Module
D-55
-
T40HFL10S02
Vishay Semiconductor Diodes Division

DIODE MODULE 100V 40A D-55

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 40A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 200ns
  • Current - Reverse Leakage @ Vr: 100µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: D-55 T-Module
  • Supplier Device Package: D-55
  • Operating Temperature - Junction: -
패키지: D-55 T-Module
재고6,512
100V
40A
-
Fast Recovery =< 500ns, > 200mA (Io)
200ns
100µA @ 100V
-
Chassis Mount
D-55 T-Module
D-55
-
hot 20ETF12S
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.2KV 20A D2PAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.31V @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 400ns
  • Current - Reverse Leakage @ Vr: 100µA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고7,632
1200V
20A
1.31V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
400ns
100µA @ 1200V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
-40°C ~ 150°C
20ETF08S
Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 20A D2PAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.31V @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 400ns
  • Current - Reverse Leakage @ Vr: 100µA @ 800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고7,920
800V
20A
1.31V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
400ns
100µA @ 800V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
-40°C ~ 150°C
hot 20ETF06S
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 20A D2PAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 160ns
  • Current - Reverse Leakage @ Vr: 100µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고139,380
600V
20A
1.3V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
160ns
100µA @ 600V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
-40°C ~ 150°C
hot 20ETF10S
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 20A D2PAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.31V @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 400ns
  • Current - Reverse Leakage @ Vr: 100µA @ 1000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고19,644
1000V
20A
1.31V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
400ns
100µA @ 1000V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
-40°C ~ 150°C
20ETF04S
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 20A D2PAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 160ns
  • Current - Reverse Leakage @ Vr: 100µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고7,456
400V
20A
1.3V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
160ns
100µA @ 400V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
-40°C ~ 150°C
SD453N16S20PC
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.6KV 400A B8

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600V
  • Current - Average Rectified (Io): 400A
  • Voltage - Forward (Vf) (Max) @ If: 2.2V @ 1500A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2µs
  • Current - Reverse Leakage @ Vr: 50mA @ 1600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: B-8
  • Supplier Device Package: B-8
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: B-8
재고5,808
1600V
400A
2.2V @ 1500A
Standard Recovery >500ns, > 200mA (Io)
2µs
50mA @ 1600V
-
Chassis, Stud Mount
B-8
B-8
-40°C ~ 150°C
hot 30WQ10FNTR
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 3.5A DPAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 3.5A
  • Voltage - Forward (Vf) (Max) @ If: 810mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-PAK (TO-252AA)
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고16,740
100V
3.5A
810mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 100V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-PAK (TO-252AA)
-40°C ~ 150°C
20ETS08STRL
Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 20A D2PAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 20A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고5,440
800V
20A
1.1V @ 20A
Standard Recovery >500ns, > 200mA (Io)
-
100µA @ 800V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
-40°C ~ 150°C
HFA140NH60
Vishay Semiconductor Diodes Division

DIODE MODULE 600V 140A HALF-PAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 140A
  • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 140A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 140ns
  • Current - Reverse Leakage @ Vr: 40µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: D-67 HALF-PAK
  • Supplier Device Package: HALF-PAK
  • Operating Temperature - Junction: -
패키지: D-67 HALF-PAK
재고5,728
600V
140A
1.6V @ 140A
Fast Recovery =< 500ns, > 200mA (Io)
140ns
40µA @ 600V
-
Chassis Mount
D-67 HALF-PAK
HALF-PAK
-
hot MBR735
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 35V 7.5A TO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 35V
  • Current - Average Rectified (Io): 7.5A
  • Voltage - Forward (Vf) (Max) @ If: 840mV @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 35V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -65°C ~ 150°C
패키지: TO-220-2
재고560,400
35V
7.5A
840mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 35V
-
Through Hole
TO-220-2
TO-220AC
-65°C ~ 150°C
hot MBR1635
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 35V 16A TO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 35V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 630mV @ 16A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 35V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -65°C ~ 150°C
패키지: TO-220-2
재고96,180
35V
16A
630mV @ 16A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 35V
-
Through Hole
TO-220-2
TO-220AC
-65°C ~ 150°C
hot MBR1035
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 35V 10A TO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 35V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 570mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 35V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -65°C ~ 150°C
패키지: TO-220-2
재고45,756
35V
10A
570mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 35V
-
Through Hole
TO-220-2
TO-220AC
-65°C ~ 150°C
HFA08TB60STRL
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 8A D2PAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 55ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고7,616
600V
8A
1.7V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
55ns
5µA @ 600V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
-55°C ~ 150°C
hot HFA08PB60
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 8A TO247AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 55ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247AC Modified
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: TO-247-2
재고34,944
600V
8A
1.7V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
55ns
5µA @ 600V
-
Through Hole
TO-247-2
TO-247AC Modified
-55°C ~ 150°C
HFA06PB120
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.2KV 6A TO247AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 3V @ 6A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 80ns
  • Current - Reverse Leakage @ Vr: 5µA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247AC Modified
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: TO-247-2
재고5,056
1200V
6A
3V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
80ns
5µA @ 1200V
-
Through Hole
TO-247-2
TO-247AC Modified
-55°C ~ 150°C
VS-90SQ045TR
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 9A DO204AR

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 9A
  • Voltage - Forward (Vf) (Max) @ If: 480mV @ 9A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1.75mA @ 45V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AR, Axial
  • Supplier Device Package: DO-204AR
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: DO-204AR, Axial
재고7,984
45V
9A
480mV @ 9A
Fast Recovery =< 500ns, > 200mA (Io)
-
1.75mA @ 45V
-
Through Hole
DO-204AR, Axial
DO-204AR
-55°C ~ 150°C
VS-90SQ045
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 9A DO204AR

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 9A
  • Voltage - Forward (Vf) (Max) @ If: 480mV @ 9A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1.75mA @ 45V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AR, Axial
  • Supplier Device Package: DO-204AR
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: DO-204AR, Axial
재고2,384
45V
9A
480mV @ 9A
Fast Recovery =< 500ns, > 200mA (Io)
-
1.75mA @ 45V
-
Through Hole
DO-204AR, Axial
DO-204AR
-55°C ~ 150°C
VS-90SQ040
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 9A DO204AR

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 9A
  • Voltage - Forward (Vf) (Max) @ If: 480mV @ 9A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1.75mA @ 40V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AR, Axial
  • Supplier Device Package: DO-204AR
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: DO-204AR, Axial
재고6,880
40V
9A
480mV @ 9A
Fast Recovery =< 500ns, > 200mA (Io)
-
1.75mA @ 40V
-
Through Hole
DO-204AR, Axial
DO-204AR
-55°C ~ 150°C
8TQ100STRR
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 8A D2PAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 720mV @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 550µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고2,160
100V
8A
720mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
550µA @ 100V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
-55°C ~ 175°C
hot 8TQ100S
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 8A D2PAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 720mV @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 550µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고16,596
100V
8A
720mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
550µA @ 100V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
-55°C ~ 175°C
hot 8TQ080S
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 80V 8A D2PAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 80V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 720mV @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 550µA @ 80V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고15,888
80V
8A
720mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
550µA @ 80V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
-55°C ~ 175°C
hot 8TQ080
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 80V 8A TO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 80V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 720mV @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 550µA @ 80V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: TO-220-2
재고5,552
80V
8A
720mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
550µA @ 80V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 175°C
8TQ060
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 8A TO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 720mV @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 550µA @ 60V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: TO-220-2
재고3,712
60V
8A
720mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
550µA @ 60V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 175°C
hot 8EWS12S
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.2KV 8A DPAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50µA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고367,296
1200V
8A
1.1V @ 8A
Standard Recovery >500ns, > 200mA (Io)
-
50µA @ 1200V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
-55°C ~ 150°C
hot 8EWS08S
Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 8A DPAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50µA @ 800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고263,556
800V
8A
1.1V @ 8A
Standard Recovery >500ns, > 200mA (Io)
-
50µA @ 800V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
-55°C ~ 150°C