이미지 |
부품 번호 |
제조업체 |
설명 |
패키지 |
재고 |
수량 |
Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 40A TO247AC
|
패키지: TO-247-2 |
재고4,608 |
|
600V | 40A | 1.25V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 180ns | 100µA @ 600V | - | Through Hole | TO-247-2 | TO-247AC Modified | -40°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 40A TO247AC
|
패키지: TO-247-2 |
재고7,632 |
|
400V | 40A | 1.25V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 180ns | 100µA @ 400V | - | Through Hole | TO-247-2 | TO-247AC Modified | -40°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 40A TO247AC
|
패키지: TO-247-2 |
재고6,656 |
|
200V | 40A | 1.25V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 180ns | 100µA @ 200V | - | Through Hole | TO-247-2 | TO-247AC Modified | -40°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 30A TO247AC
|
패키지: TO-247-2 |
재고6,704 |
|
1200V | 30A | 1.41V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 160ns | 100µA @ 1200V | - | Through Hole | TO-247-2 | TO-247AC Modified | -40°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 30A TO247AC
|
패키지: TO-247-2 |
재고4,624 |
|
1000V | 30A | 1.41V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 450ns | 100µA @ 1000V | - | Through Hole | TO-247-2 | TO-247AC Modified | -40°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 30A TO247AC
|
패키지: TO-247-2 |
재고87,048 |
|
600V | 30A | 1.41V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 160ns | 100µA @ 600V | - | Through Hole | TO-247-2 | TO-247AC Modified | -40°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 30A TO247AC
|
패키지: TO-247-2 |
재고3,808 |
|
400V | 30A | 1.41V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 160ns | 100µA @ 400V | - | Through Hole | TO-247-2 | TO-247AC Modified | -40°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 30A TO247AC
|
패키지: TO-247-2 |
재고3,168 |
|
200V | 30A | 1.41V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 160ns | 100µA @ 200V | - | Through Hole | TO-247-2 | TO-247AC Modified | -40°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 30A TO247AC
|
패키지: TO-247-3 |
재고15,324 |
|
1200V | 30A | 1.41V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 450ns | 100µA @ 1200V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 30A TO247AC
|
패키지: TO-247-3 |
재고33,468 |
|
1000V | 30A | 1.41V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 450ns | 100µA @ 1000V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 30A TO247AC
|
패키지: TO-247-3 |
재고68,868 |
|
600V | 30A | 1.41V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 160ns | 100µA @ 600V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 30A TO247AC
|
패키지: TO-247-3 |
재고68,232 |
|
400V | 30A | 1.41V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 160ns | 100µA @ 400V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 20A TO220FP
|
패키지: TO-220-2 Full Pack |
재고3,360 |
|
1200V | 20A | 1.1V @ 20A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 1200V | - | Through Hole | TO-220-2 Full Pack | TO-220AC Full Pack | -40°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 20A TO220FP
|
패키지: TO-220-2 Full Pack |
재고6,064 |
|
800V | 20A | 1.1V @ 20A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 800V | - | Through Hole | TO-220-2 Full Pack | TO-220AC Full Pack | -40°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 20A TO220FP
|
패키지: TO-220-2 Full Pack |
재고7,104 |
|
600V | 20A | 1.3V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 160ns | 100µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220AC Full Pack | -40°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 20A TO220FP
|
패키지: TO-220-3 Full Pack |
재고22,920 |
|
400V | 20A | 1.3V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 160ns | 100µA @ 400V | - | Through Hole | TO-220-3 Full Pack | TO-220AB Full-Pak | -40°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 20A TO220FP
|
패키지: TO-220-2 Full Pack |
재고2,368 |
|
200V | 20A | 1.3V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 160ns | 100µA @ 200V | - | Through Hole | TO-220-2 Full Pack | TO-220AC Full Pack | -40°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 10A TO220FP
|
패키지: TO-220-2 Full Pack |
재고7,248 |
|
1200V | 10A | 1.1V @ 10A | Standard Recovery >500ns, > 200mA (Io) | - | 50µA @ 1200V | - | Through Hole | TO-220-2 Full Pack | TO-220AC Full Pack | -40°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 10A TO220FP
|
패키지: TO-220-2 Full Pack |
재고8,376 |
|
800V | 10A | 1.1V @ 10A | Standard Recovery >500ns, > 200mA (Io) | - | 50µA @ 800V | - | Through Hole | TO-220-2 Full Pack | TO-220AC Full Pack | -40°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 20A TO220AC
|
패키지: TO-220-2 |
재고7,152 |
|
1200V | 20A | 1.31V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 100µA @ 1200V | - | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 20A TO220AC
|
패키지: TO-220-2 |
재고4,800 |
|
1000V | 20A | 1.31V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 100µA @ 1000V | - | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 20A TO220AC
|
패키지: TO-220-2 |
재고5,520 |
|
800V | 20A | 1.31V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 100µA @ 800V | - | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 20A TO220AC
|
패키지: TO-220-2 |
재고96,348 |
|
600V | 20A | 1.3V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 160ns | 100µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 20A TO220AC
|
패키지: TO-220-2 |
재고6,060 |
|
400V | 20A | 1.3V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 160ns | 100µA @ 400V | - | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 20A TO220AC
|
패키지: TO-220-2 |
재고60,600 |
|
200V | 20A | 1.3V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 160ns | 100µA @ 200V | - | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 10A TO220AC
|
패키지: TO-220-2 |
재고5,408 |
|
1200V | 10A | 1.1V @ 10A | Standard Recovery >500ns, > 200mA (Io) | - | 50µA @ 1200V | - | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 10A TO220AC
|
패키지: TO-220-2 |
재고5,712 |
|
1200V | 10A | 1.33V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 310ns | 100µA @ 1200V | - | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 10A TO220AC
|
패키지: TO-220-2 |
재고12,240 |
|
1000V | 10A | 1.33V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 310ns | 100µA @ 1000V | - | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 150°C |