페이지 51 - Vishay Semiconductor Diodes Division 제품 - 다이오드 - 정류기 - 단일 | Heisener Electronics
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Vishay Semiconductor Diodes Division 제품 - 다이오드 - 정류기 - 단일

기록 10,373
페이지  51/371
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
V20PWM10-M3/I
Vishay Semiconductor Diodes Division

RECT SCHKY 20A 100V SLIMDPAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 100V
  • Capacitance @ Vr, F: 1575pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: SlimDPAK
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고3,120
100V
20A
900mV @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 100V
1575pF @ 4V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
SlimDPAK
-40°C ~ 175°C
V20PW12-M3/I
Vishay Semiconductor Diodes Division

RECT SCHKY 20A 120V SLIMDPAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 120V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.02V @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 800µA @ 120V
  • Capacitance @ Vr, F: 1350pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: SlimDPAK
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고6,960
120V
20A
1.02V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
-
800µA @ 120V
1350pF @ 4V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
SlimDPAK
-40°C ~ 150°C
V20PW10-M3/I
Vishay Semiconductor Diodes Division

RECT SCHKY 20A 100V SLIMDPAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 860mV @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 100V
  • Capacitance @ Vr, F: 1510pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: SlimDPAK
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고7,552
100V
20A
860mV @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 100V
1510pF @ 4V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
SlimDPAK
-40°C ~ 150°C
V20PWM15-M3/I
Vishay Semiconductor Diodes Division

RECT SCHKY 20A 150V SLIMDPAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.47V @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 250µA @ 150V
  • Capacitance @ Vr, F: 950pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: SlimDPAK
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고4,944
150V
20A
1.47V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
-
250µA @ 150V
950pF @ 4V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
SlimDPAK
-40°C ~ 175°C
V20PW15-M3/I
Vishay Semiconductor Diodes Division

RECT SCHKY 20A 150V SLIMDPAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.47V @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 250µA @ 150V
  • Capacitance @ Vr, F: 950pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: SlimDPAK
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고3,296
150V
20A
1.47V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
-
250µA @ 150V
950pF @ 4V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
SlimDPAK
-40°C ~ 150°C
V10KM120DUHM3/H
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 120V 5A DUAL FLAT

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 120V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 890mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: 450pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: 8-PowerTDFN
재고3,264
120V
10A
890mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
-
450pF @ 4V, 1MHz
Surface Mount
8-PowerTDFN
-
-40°C ~ 175°C
V10KM120DU-M3/H
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 120V 5A DUAL FLAT

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 120V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 890mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: 450pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: 8-PowerTDFN
재고7,728
120V
10A
890mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
-
450pF @ 4V, 1MHz
Surface Mount
8-PowerTDFN
-
-40°C ~ 175°C
SS2H10HE3_A/H
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 2A DO214AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 790mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: DO-214AA, SMB
재고3,504
100V
2A
790mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
10µA @ 100V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-65°C ~ 175°C
V8KM60DUHM3/I
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 4A DUAL FLATP

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 300µA @ 60V
  • Capacitance @ Vr, F: 500pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: 8-PowerTDFN
재고7,088
60V
8A
-
Fast Recovery =< 500ns, > 200mA (Io)
-
300µA @ 60V
500pF @ 4V, 1MHz
Surface Mount
8-PowerTDFN
-
-40°C ~ 175°C
V8KM60DUHM3/H
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 4A DUAL FLATP

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 300µA @ 60V
  • Capacitance @ Vr, F: 500pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: 8-PowerTDFN
재고3,488
60V
8A
-
Fast Recovery =< 500ns, > 200mA (Io)
-
300µA @ 60V
500pF @ 4V, 1MHz
Surface Mount
8-PowerTDFN
-
-40°C ~ 175°C
V6KL45DUHM3/H
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 3A DUAL FLATP

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 540mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 450µA @ 45V
  • Capacitance @ Vr, F: 550pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: 8-PowerTDFN
재고3,680
45V
6A
540mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
450µA @ 45V
550pF @ 4V, 1MHz
Surface Mount
8-PowerTDFN
-
-40°C ~ 150°C
V8PM10SHM3/H
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 8A SMPC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 780mV @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: TO-277, 3-PowerDFN
재고3,120
100V
8A
780mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 100V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-40°C ~ 175°C
V10KM120DUHM3/I
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 120V 5A DUAL FLAT

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 120V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 890mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: 450pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: 8-PowerTDFN
재고3,184
120V
10A
890mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
-
450pF @ 4V, 1MHz
Surface Mount
8-PowerTDFN
-
-40°C ~ 175°C
V8KM60DU-M3/H
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 4A DUAL FLATP

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 300µA @ 60V
  • Capacitance @ Vr, F: 500pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: 8-PowerTDFN
재고3,728
60V
8A
-
Fast Recovery =< 500ns, > 200mA (Io)
-
300µA @ 60V
500pF @ 4V, 1MHz
Surface Mount
8-PowerTDFN
-
-40°C ~ 175°C
V10KM120DU-M3/I
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 120V 5A DUAL FLAT

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 120V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 890mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: 450pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: 8-PowerTDFN
재고6,944
120V
10A
890mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
-
450pF @ 4V, 1MHz
Surface Mount
8-PowerTDFN
-
-40°C ~ 175°C
V6KL45DU-M3/H
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 3A DUAL FLATP

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 540mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 450µA @ 45V
  • Capacitance @ Vr, F: 550pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: 8-PowerTDFN
재고7,008
45V
6A
540mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
450µA @ 45V
550pF @ 4V, 1MHz
Surface Mount
8-PowerTDFN
-
-40°C ~ 150°C
V8PM10S-M3/H
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 8A SMPC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 780mV @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: TO-277, 3-PowerDFN
재고3,456
100V
8A
780mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 100V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-40°C ~ 175°C
V6KL45DUHM3/I
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 3A DUAL FLATP

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 540mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 450µA @ 45V
  • Capacitance @ Vr, F: 550pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: 8-PowerTDFN
재고6,544
45V
6A
540mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
450µA @ 45V
550pF @ 4V, 1MHz
Surface Mount
8-PowerTDFN
-
-40°C ~ 150°C
V8PM10SHM3/I
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 8A SMPC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 780mV @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: TO-277, 3-PowerDFN
재고4,416
100V
8A
780mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 100V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-40°C ~ 175°C
V8KM60DU-M3/I
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 4A DUAL FLATP

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 300µA @ 60V
  • Capacitance @ Vr, F: 500pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: 8-PowerTDFN
재고4,960
60V
8A
-
Fast Recovery =< 500ns, > 200mA (Io)
-
300µA @ 60V
500pF @ 4V, 1MHz
Surface Mount
8-PowerTDFN
-
-40°C ~ 175°C
V6KL45DU-M3/I
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 3A DUAL FLATP

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 540mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 450µA @ 45V
  • Capacitance @ Vr, F: 550pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: 8-PowerTDFN
재고2,464
45V
6A
540mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
450µA @ 45V
550pF @ 4V, 1MHz
Surface Mount
8-PowerTDFN
-
-40°C ~ 150°C
V8PM10S-M3/I
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 8A SMPC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 780mV @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: TO-277, 3-PowerDFN
재고3,520
100V
8A
780mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 100V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-40°C ~ 175°C
SE50PAJ-M3/I
Vishay Semiconductor Diodes Division

DIODE RECT 600V 1.6A DO221BC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1.6A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 940mV @ 2.5A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2µs
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: 32pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
  • Supplier Device Package: DO-221BC (SMPA)
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: DO-221BC, SMA Flat Leads Exposed Pad
재고4,480
600V
1.6A (DC)
940mV @ 2.5A
Standard Recovery >500ns, > 200mA (Io)
2µs
10µA @ 600V
32pF @ 4V, 1MHz
Surface Mount
DO-221BC, SMA Flat Leads Exposed Pad
DO-221BC (SMPA)
-55°C ~ 175°C
VS-3EJU06-M3/6A
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 3A SLIM SMA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 3µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AC, SMA Flat Leads
  • Supplier Device Package: DO-221AC (SlimSMA)
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: DO-221AC, SMA Flat Leads
재고7,696
600V
3A
1.35V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
3µA @ 600V
-
Surface Mount
DO-221AC, SMA Flat Leads
DO-221AC (SlimSMA)
-55°C ~ 175°C
VS-3EJU06HM3/6A
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 3A SLIM SMA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 3µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AC, SMA Flat Leads
  • Supplier Device Package: DO-221AC (SlimSMA)
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: DO-221AC, SMA Flat Leads
재고4,064
600V
3A
1.35V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
3µA @ 600V
-
Surface Mount
DO-221AC, SMA Flat Leads
DO-221AC (SlimSMA)
-55°C ~ 175°C
SS2PH10HM3_A/H
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 2A DO220AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 800mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1µA @ 100V
  • Capacitance @ Vr, F: 65pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-220AA
  • Supplier Device Package: DO-220AA (SMP)
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: DO-220AA
재고2,432
100V
2A
800mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
1µA @ 100V
65pF @ 4V, 1MHz
Surface Mount
DO-220AA
DO-220AA (SMP)
-55°C ~ 175°C
SS2FL4HM3/H
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 2A DO-219AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 580mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 220µA @ 40V
  • Capacitance @ Vr, F: 125pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: DO-219AB (SMF)
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: DO-219AB
재고6,416
40V
2A
580mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
220µA @ 40V
125pF @ 4V, 1MHz
Surface Mount
DO-219AB
DO-219AB (SMF)
-55°C ~ 150°C
SS2FL3HM3/H
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 2A DO-219AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 540mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 30V
  • Capacitance @ Vr, F: 145pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: DO-219AB (SMF)
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: DO-219AB
재고2,272
30V
2A
540mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 30V
145pF @ 4V, 1MHz
Surface Mount
DO-219AB
DO-219AB (SMF)
-55°C ~ 150°C