페이지 54 - Vishay Semiconductor Diodes Division 제품 - 다이오드 - 정류기 - 단일

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
1N4148-P-TAP	Vishay Semiconductor Diodes Division	DIODE GEN PURP 75V 2A DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 8ns Current - Reverse Leakage @ Vr: 5µA @ 75V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max)	패키지: DO-204AH, DO-35, Axial	재고7,024	75V	2A	1V @ 10mA	Fast Recovery =< 500ns, > 200mA (Io)	8ns	5µA @ 75V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	175°C (Max)
BAW76-TR	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 300MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 300mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 100nA @ 50V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max)	패키지: DO-204AH, DO-35, Axial	재고2,896	50V	300mA (DC)	1V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	100nA @ 50V	2pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	175°C (Max)
BAW76-TAP	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 300MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 300mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 100nA @ 50V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max)	패키지: DO-204AH, DO-35, Axial	재고5,600	50V	300mA (DC)	1V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	100nA @ 50V	2pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	175°C (Max)
BAW75-TAP	Vishay Semiconductor Diodes Division	DIODE GEN PURP 25V 300MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 25V Current - Average Rectified (Io): 300mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 30mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 100nA @ 25V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max)	패키지: DO-204AH, DO-35, Axial	재고5,136	25V	300mA (DC)	1V @ 30mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	100nA @ 25V	4pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	175°C (Max)
1N4154TR	Vishay Semiconductor Diodes Division	DIODE GEN PURP 25V 150MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 25V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 1V @ 30mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 100nA @ 25V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-204AH, DO-35, Axial	재고5,296	25V	150mA	1V @ 30mA	Small Signal =< 200mA (Io), Any Speed	4ns	100nA @ 25V	4pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 175°C
1N914TAP	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 300MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 300mA Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 5µA @ 75V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-204AH, DO-35, Axial	재고2,032	100V	300mA	1V @ 10mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	5µA @ 75V	4pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 175°C
1N4448TAP	Vishay Semiconductor Diodes Division	DIODE GEN PURP 75V 150MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 720mV @ 5mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 8ns Current - Reverse Leakage @ Vr: 5µA @ 75V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max)	패키지: DO-204AH, DO-35, Axial	재고5,040	75V	150mA	720mV @ 5mA	Small Signal =< 200mA (Io), Any Speed	8ns	5µA @ 75V	4pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	175°C (Max)
1N4154TAP	Vishay Semiconductor Diodes Division	DIODE GEN PURP 25V 150MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 25V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 1V @ 30mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 100nA @ 25V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-204AH, DO-35, Axial	재고6,752	25V	150mA	1V @ 30mA	Small Signal =< 200mA (Io), Any Speed	4ns	100nA @ 25V	4pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 175°C
1N4151TAP	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 150MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 50nA @ 50V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-204AH, DO-35, Axial	재고3,344	50V	150mA	1V @ 50mA	Small Signal =< 200mA (Io), Any Speed	4ns	50nA @ 50V	2pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 175°C
VS-T85HFL100S05	Vishay Semiconductor Diodes Division	DIODE MODULE 1KV 85A D-55 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 85A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 20mA @ 1000V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-55 T-Module Supplier Device Package: D-55 Operating Temperature - Junction: -	패키지: D-55 T-Module	재고6,944	1000V	85A	-	Fast Recovery =< 500ns, > 200mA (Io)	500ns	20mA @ 1000V	-	Chassis Mount	D-55 T-Module	D-55	-
VS-T85HFL60S02	Vishay Semiconductor Diodes Division	DIODE MODULE 600V 85A D-55 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 85A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 20mA @ 600V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-55 T-Module Supplier Device Package: D-55 Operating Temperature - Junction: -	패키지: D-55 T-Module	재고5,824	600V	85A	-	Fast Recovery =< 500ns, > 200mA (Io)	200ns	20mA @ 600V	-	Chassis Mount	D-55 T-Module	D-55	-
VS-T70HF40	Vishay Semiconductor Diodes Division	DIODE MODULE 400V 70A D-55 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 70A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 15mA @ 400V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-55 T-Module Supplier Device Package: D-55 Operating Temperature - Junction: -	패키지: D-55 T-Module	재고4,656	400V	70A	-	Standard Recovery >500ns, > 200mA (Io)	-	15mA @ 400V	-	Chassis Mount	D-55 T-Module	D-55	-
VS-T40HF10	Vishay Semiconductor Diodes Division	DIODE MODULE 100V 40A D-55 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 15mA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-55 T-Module Supplier Device Package: D-55 Operating Temperature - Junction: -	패키지: D-55 T-Module	재고5,936	100V	40A	-	Standard Recovery >500ns, > 200mA (Io)	-	15mA @ 100V	-	Chassis Mount	D-55 T-Module	D-55	-
VS-120NQ045PBF	Vishay Semiconductor Diodes Division	DIODE MODULE 45V 120A D-67 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 120A Voltage - Forward (Vf) (Max) @ If: 630mV @ 120A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10mA @ 45V Capacitance @ Vr, F: 5200pF @ 5V, 1MHz Mounting Type: Chassis Mount Package / Case: D-67 HALF-PAK Supplier Device Package: D-67 Operating Temperature - Junction: -	패키지: D-67 HALF-PAK	재고3,504	45V	120A	630mV @ 120A	Fast Recovery =< 500ns, > 200mA (Io)	-	10mA @ 45V	5200pF @ 5V, 1MHz	Chassis Mount	D-67 HALF-PAK	D-67	-
VS-25FR120M	Vishay Semiconductor Diodes Division	DIODE 25A 1200V M5X0.8 DO-4 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 78A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-203AA, DO-4, Stud	재고2,656	1200V	25A	1.3V @ 78A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-203AA	-65°C ~ 175°C
VS-CPU6006LHN3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 2X30A TO-247 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.75V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 42ns Current - Reverse Leakage @ Vr: 30µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-247-3	재고2,640	600V	30A	1.75V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	42ns	30µA @ 600V	-	Through Hole	TO-247-3	TO-247AD	-55°C ~ 175°C
VS-EPU6006LHN3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 60A TO-247 L Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 110ns Current - Reverse Leakage @ Vr: 30µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247AD Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-247-2	재고9,036	600V	60A	1.5V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	110ns	30µA @ 600V	-	Through Hole	TO-247-2	TO-247AD	-55°C ~ 175°C
VS-C4PH6006LHN3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 2X30A TO-247 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 2V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 55ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-247-3	재고7,024	600V	30A	2V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	55ns	50µA @ 600V	-	Through Hole	TO-247-3	TO-247AD	-55°C ~ 175°C
VS-C4PU6006LHN3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 2X30A TO-247 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 65ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-247-3	재고5,648	600V	30A	1.6V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	65ns	50µA @ 600V	-	Through Hole	TO-247-3	TO-247AD	-55°C ~ 175°C
VS-E4PH6006LHN3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 60A TO-247 L Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 2V @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 68ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247AD Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-247-2	재고2,864	600V	60A	2V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	68ns	50µA @ 600V	-	Through Hole	TO-247-2	TO-247AD	-55°C ~ 175°C
VS-E4PU6006LHN3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 60A TO-247 L Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 74ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247AD Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-247-2	재고6,320	600V	60A	1.7V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	74ns	50µA @ 600V	-	Through Hole	TO-247-2	TO-247AD	-55°C ~ 175°C
VS-CPU6006L-N3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 2X30A TO-247 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.75V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 42ns Current - Reverse Leakage @ Vr: 30µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-247-3	재고3,248	600V	30A	1.75V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	42ns	30µA @ 600V	-	Through Hole	TO-247-3	TO-247AD	-55°C ~ 175°C
VS-C4PH3006LHN3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 2X15A TO-247 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.9V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 15µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-247-3	재고2,272	600V	15A	1.9V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	15µA @ 600V	-	Through Hole	TO-247-3	TO-247AD	-55°C ~ 175°C
VS-C4PU3006LHN3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 2X15A TO-247 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.55V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60ns Current - Reverse Leakage @ Vr: 15µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-247-3	재고5,632	600V	15A	1.55V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	60ns	15µA @ 600V	-	Through Hole	TO-247-3	TO-247AD	-55°C ~ 175°C
VS-EPU3006LHN3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 30A TO-247 L Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 2V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45ns Current - Reverse Leakage @ Vr: 30µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247AD Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-247-2	재고4,464	600V	30A	2V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	45ns	30µA @ 600V	-	Through Hole	TO-247-2	TO-247AD	-55°C ~ 175°C
VS-EPH3006LHN3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 30A TO-247 L Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 2.65V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 26ns Current - Reverse Leakage @ Vr: 30µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247AD Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-247-2	재고3,376	600V	30A	2.65V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	26ns	30µA @ 600V	-	Through Hole	TO-247-2	TO-247AD	-55°C ~ 175°C
VS-APH3006LHN3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 30A TO-247 L Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 2.65V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 26ns Current - Reverse Leakage @ Vr: 30µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-247-3	재고5,264	600V	30A	2.65V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	26ns	30µA @ 600V	-	Through Hole	TO-247-3	TO-247AD	-55°C ~ 175°C
VS-EPU6006L-N3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 60A TO-247 L Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 110ns Current - Reverse Leakage @ Vr: 30µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247AD Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-247-2	재고5,248	600V	60A	1.5V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	110ns	30µA @ 600V	-	Through Hole	TO-247-2	TO-247AD	-55°C ~ 175°C

1N4148-P-TAP

Vishay Semiconductor Diodes Division

DIODE GEN PURP 75V 2A DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8ns
Current - Reverse Leakage @ Vr: 5µA @ 75V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)

패키지: DO-204AH, DO-35, Axial

재고7,024

75V

2A

1V @ 10mA

Fast Recovery =< 500ns, > 200mA (Io)

8ns

5µA @ 75V

-

Through Hole

DO-204AH, DO-35, Axial

DO-35

175°C (Max)

BAW76-TR

Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 300MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 300mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 100nA @ 50V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)

패키지: DO-204AH, DO-35, Axial

재고2,896

50V

300mA (DC)

1V @ 100mA

Fast Recovery =< 500ns, > 200mA (Io)

4ns

100nA @ 50V

2pF @ 0V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

DO-35

175°C (Max)

BAW76-TAP

Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 300MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 300mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 100nA @ 50V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)

패키지: DO-204AH, DO-35, Axial

재고5,600

50V

300mA (DC)

1V @ 100mA

Fast Recovery =< 500ns, > 200mA (Io)

4ns

100nA @ 50V

2pF @ 0V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

DO-35

175°C (Max)

BAW75-TAP

Vishay Semiconductor Diodes Division

DIODE GEN PURP 25V 300MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 25V
Current - Average Rectified (Io): 300mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 30mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 100nA @ 25V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)

패키지: DO-204AH, DO-35, Axial

재고5,136

25V

300mA (DC)

1V @ 30mA

Fast Recovery =< 500ns, > 200mA (Io)

4ns

100nA @ 25V

4pF @ 0V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

DO-35

175°C (Max)

1N4154TR

Vishay Semiconductor Diodes Division

DIODE GEN PURP 25V 150MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 25V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 30mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 100nA @ 25V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-204AH, DO-35, Axial

재고5,296

25V

150mA

1V @ 30mA

Small Signal =< 200mA (Io), Any Speed

4ns

100nA @ 25V

4pF @ 0V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

DO-35

-65°C ~ 175°C

1N914TAP

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 300MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 300mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 5µA @ 75V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-204AH, DO-35, Axial

재고2,032

100V

300mA

1V @ 10mA

Fast Recovery =< 500ns, > 200mA (Io)

4ns

5µA @ 75V

4pF @ 0V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

DO-35

-65°C ~ 175°C

1N4448TAP

Vishay Semiconductor Diodes Division

DIODE GEN PURP 75V 150MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 720mV @ 5mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 8ns
Current - Reverse Leakage @ Vr: 5µA @ 75V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)

패키지: DO-204AH, DO-35, Axial

재고5,040

75V

150mA

720mV @ 5mA

Small Signal =< 200mA (Io), Any Speed

8ns

5µA @ 75V

4pF @ 0V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

DO-35

175°C (Max)

1N4154TAP

Vishay Semiconductor Diodes Division

DIODE GEN PURP 25V 150MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 25V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 30mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 100nA @ 25V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-204AH, DO-35, Axial

재고6,752

25V

150mA

1V @ 30mA

Small Signal =< 200mA (Io), Any Speed

4ns

100nA @ 25V

4pF @ 0V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

DO-35

-65°C ~ 175°C

1N4151TAP

Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 150MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 50nA @ 50V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-204AH, DO-35, Axial

재고3,344

50V

150mA

1V @ 50mA

Small Signal =< 200mA (Io), Any Speed

4ns

50nA @ 50V

2pF @ 0V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

DO-35

-65°C ~ 175°C

VS-T85HFL100S05

Vishay Semiconductor Diodes Division

DIODE MODULE 1KV 85A D-55

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 85A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 20mA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-55 T-Module
Supplier Device Package: D-55
Operating Temperature - Junction: -

패키지: D-55 T-Module

재고6,944

1000V

85A

-

Fast Recovery =< 500ns, > 200mA (Io)

500ns

20mA @ 1000V

-

Chassis Mount

D-55 T-Module

D-55

-

VS-T85HFL60S02

Vishay Semiconductor Diodes Division

DIODE MODULE 600V 85A D-55

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 85A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 20mA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-55 T-Module
Supplier Device Package: D-55
Operating Temperature - Junction: -

패키지: D-55 T-Module

재고5,824

600V

85A

-

Fast Recovery =< 500ns, > 200mA (Io)

200ns

20mA @ 600V

-

Chassis Mount

D-55 T-Module

D-55

-

VS-T70HF40

Vishay Semiconductor Diodes Division

DIODE MODULE 400V 70A D-55

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 70A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 15mA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-55 T-Module
Supplier Device Package: D-55
Operating Temperature - Junction: -

패키지: D-55 T-Module

재고4,656

400V

70A

-

Standard Recovery >500ns, > 200mA (Io)

-

15mA @ 400V

-

Chassis Mount

D-55 T-Module

D-55

-

VS-T40HF10

Vishay Semiconductor Diodes Division

DIODE MODULE 100V 40A D-55

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 40A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 15mA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-55 T-Module
Supplier Device Package: D-55
Operating Temperature - Junction: -

패키지: D-55 T-Module

재고5,936

100V

40A

-

Standard Recovery >500ns, > 200mA (Io)

-

15mA @ 100V

-

Chassis Mount

D-55 T-Module

D-55

-

VS-120NQ045PBF

Vishay Semiconductor Diodes Division

DIODE MODULE 45V 120A D-67

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 120A
Voltage - Forward (Vf) (Max) @ If: 630mV @ 120A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10mA @ 45V
Capacitance @ Vr, F: 5200pF @ 5V, 1MHz
Mounting Type: Chassis Mount
Package / Case: D-67 HALF-PAK
Supplier Device Package: D-67
Operating Temperature - Junction: -

패키지: D-67 HALF-PAK

재고3,504

45V

120A

630mV @ 120A

Fast Recovery =< 500ns, > 200mA (Io)

-

10mA @ 45V

5200pF @ 5V, 1MHz

Chassis Mount

D-67 HALF-PAK

D-67

-

VS-25FR120M

Vishay Semiconductor Diodes Division

DIODE 25A 1200V M5X0.8 DO-4

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 78A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-203AA, DO-4, Stud

재고2,656

1200V

25A

1.3V @ 78A

Standard Recovery >500ns, > 200mA (Io)

-

Chassis, Stud Mount

DO-203AA, DO-4, Stud

DO-203AA

-65°C ~ 175°C

VS-CPU6006LHN3

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 2X30A TO-247

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.75V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 42ns
Current - Reverse Leakage @ Vr: 30µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-247-3

재고2,640

600V

30A

1.75V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

42ns

30µA @ 600V

-

Through Hole

TO-247-3

TO-247AD

-55°C ~ 175°C

VS-EPU6006LHN3

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 60A TO-247 L

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 60A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 110ns
Current - Reverse Leakage @ Vr: 30µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-247-2

재고9,036

600V

60A

1.5V @ 60A

Fast Recovery =< 500ns, > 200mA (Io)

110ns

30µA @ 600V

-

Through Hole

TO-247-2

TO-247AD

-55°C ~ 175°C

VS-C4PH6006LHN3

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 2X30A TO-247

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 2V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-247-3

재고7,024

600V

30A

2V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

55ns

50µA @ 600V

-

Through Hole

TO-247-3

TO-247AD

-55°C ~ 175°C

VS-C4PU6006LHN3

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 2X30A TO-247

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-247-3

재고5,648

600V

30A

1.6V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

65ns

50µA @ 600V

-

Through Hole

TO-247-3

TO-247AD

-55°C ~ 175°C

VS-E4PH6006LHN3

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 60A TO-247 L

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 60A
Voltage - Forward (Vf) (Max) @ If: 2V @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 68ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-247-2

재고2,864

600V

60A

2V @ 60A

Fast Recovery =< 500ns, > 200mA (Io)

68ns

50µA @ 600V

-

Through Hole

TO-247-2

TO-247AD

-55°C ~ 175°C

VS-E4PU6006LHN3

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 60A TO-247 L

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 60A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 74ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-247-2

재고6,320

600V

60A

1.7V @ 60A

Fast Recovery =< 500ns, > 200mA (Io)

74ns

50µA @ 600V

-

Through Hole

TO-247-2

TO-247AD

-55°C ~ 175°C

VS-CPU6006L-N3

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 2X30A TO-247

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.75V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 42ns
Current - Reverse Leakage @ Vr: 30µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-247-3

재고3,248

600V

30A

1.75V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

42ns

30µA @ 600V

-

Through Hole

TO-247-3

TO-247AD

-55°C ~ 175°C

VS-C4PH3006LHN3

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 2X15A TO-247

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 15µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-247-3

재고2,272

600V

15A

1.9V @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

15µA @ 600V

-

Through Hole

TO-247-3

TO-247AD

-55°C ~ 175°C

VS-C4PU3006LHN3

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 2X15A TO-247

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.55V @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60ns
Current - Reverse Leakage @ Vr: 15µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-247-3

재고5,632

600V

15A

1.55V @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

60ns

15µA @ 600V

-

Through Hole

TO-247-3

TO-247AD

-55°C ~ 175°C

VS-EPU3006LHN3

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 30A TO-247 L

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 2V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45ns
Current - Reverse Leakage @ Vr: 30µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-247-2

재고4,464

600V

30A

2V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

45ns

30µA @ 600V

-

Through Hole

TO-247-2

TO-247AD

-55°C ~ 175°C

VS-EPH3006LHN3

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 30A TO-247 L

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 2.65V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 26ns
Current - Reverse Leakage @ Vr: 30µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-247-2

재고3,376

600V

30A

2.65V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

26ns

30µA @ 600V

-

Through Hole

TO-247-2

TO-247AD

-55°C ~ 175°C

VS-APH3006LHN3

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 30A TO-247 L

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 2.65V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 26ns
Current - Reverse Leakage @ Vr: 30µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-247-3

재고5,264

600V

30A

2.65V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

26ns

30µA @ 600V

-

Through Hole

TO-247-3

TO-247AD

-55°C ~ 175°C

VS-EPU6006L-N3

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 60A TO-247 L

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 60A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 110ns
Current - Reverse Leakage @ Vr: 30µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-247-2

재고5,248

600V

60A

1.5V @ 60A

Fast Recovery =< 500ns, > 200mA (Io)

110ns

30µA @ 600V

-

Through Hole

TO-247-2

TO-247AD

-55°C ~ 175°C