페이지 2 - Vishay Semiconductor Diodes Division 제품 - 트랜지스터 - IGBT - 모듈

부품 번호	제조업체	설명	패키지	재고	Configuration	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Power - Max	Vce(on) (Max) @ Vge, Ic	Current - Collector Cutoff (Max)	Input Capacitance (Cies) @ Vce	Input	NTC Thermistor	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
VS-GT200TP065N	Vishay Semiconductor Diodes Division	IGBT IGBT Type: Trench Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 221A Power - Max: 600W Vce(on) (Max) @ Vge, Ic: 2.12V @ 15V, 200A Current - Collector Cutoff (Max): 60µA Input Capacitance (Cies) @ Vce: - Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: INT-A-Pak Supplier Device Package: INT-A-PAK	패키지: INT-A-Pak	재고3,904	Half Bridge	650V	221A	600W	2.12V @ 15V, 200A	60µA	-	Standard	No	-40°C ~ 175°C (TJ)	Chassis Mount	INT-A-Pak	INT-A-PAK
VS-40MT120UHTAPBF	Vishay Semiconductor Diodes Division	IGBT 1200V 80A 463W MTP IGBT Type: NPT Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 80A Power - Max: 463W Vce(on) (Max) @ Vge, Ic: 4.91V @ 15V, 80A Current - Collector Cutoff (Max): 250µA Input Capacitance (Cies) @ Vce: 8.28nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: 12-MTP Module Supplier Device Package: MTP	패키지: 12-MTP Module	재고2,768	Half Bridge	1200V	80A	463W	4.91V @ 15V, 80A	250µA	8.28nF @ 30V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	12-MTP Module	MTP
VS-GB100TS60NPBF	Vishay Semiconductor Diodes Division	IGBT 600V 108A 390W INT-A-PAK IGBT Type: NPT Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 108A Power - Max: 390W Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 100A Current - Collector Cutoff (Max): 100µA Input Capacitance (Cies) @ Vce: - Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: INT-A-Pak Supplier Device Package: INT-A-PAK	패키지: INT-A-Pak	재고7,424	Half Bridge	600V	108A	390W	2.85V @ 15V, 100A	100µA	-	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	INT-A-Pak	INT-A-PAK
VS-GB100TP120N	Vishay Semiconductor Diodes Division	IGBT 1200V 200A 650W INT-A-PAK IGBT Type: - Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 200A Power - Max: 650W Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 7.43nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: INT-A-Pak Supplier Device Package: INT-A-PAK	패키지: INT-A-Pak	재고7,408	Half Bridge	1200V	200A	650W	2.2V @ 15V, 100A	5mA	7.43nF @ 25V	Standard	No	150°C (TJ)	Chassis Mount	INT-A-Pak	INT-A-PAK
VS-GB150TS60NPBF	Vishay Semiconductor Diodes Division	IGBT 600V 138A 500W INT-A-PAK IGBT Type: NPT Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 138A Power - Max: 500W Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 150A Current - Collector Cutoff (Max): 200µA Input Capacitance (Cies) @ Vce: - Input: Standard NTC Thermistor: No Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: INT-A-PAK (3 + 4) Supplier Device Package: INT-A-PAK	패키지: INT-A-PAK (3 + 4)	재고3,440	Half Bridge	600V	138A	500W	3V @ 15V, 150A	200µA	-	Standard	No	150°C (TJ)	Chassis Mount	INT-A-PAK (3 + 4)	INT-A-PAK
VS-150MT060WDF	Vishay Semiconductor Diodes Division	DIODE GEN PURP IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 138A Power - Max: 543W Vce(on) (Max) @ Vge, Ic: 2.48V @ 15V, 80A Current - Collector Cutoff (Max): 100µA Input Capacitance (Cies) @ Vce: 14nF @ 30V Input: Standard NTC Thermistor: Yes Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: 12-MTP Module Supplier Device Package: MTP	패키지: 12-MTP Module	재고6,224	-	600V	138A	543W	2.48V @ 15V, 80A	100µA	14nF @ 30V	Standard	Yes	150°C (TJ)	Chassis Mount	12-MTP Module	MTP
VS-GB75TP120U	Vishay Semiconductor Diodes Division	IGBT 1200V 105A 500W INT-A-PAK IGBT Type: - Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 105A Power - Max: 500W Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 75A (Typ) Current - Collector Cutoff (Max): 2mA Input Capacitance (Cies) @ Vce: 4.3nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: INT-A-PAK (3 + 4) Supplier Device Package: INT-A-PAK	패키지: INT-A-PAK (3 + 4)	재고2,608	Half Bridge	1200V	105A	500W	3.2V @ 15V, 75A (Typ)	2mA	4.3nF @ 30V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	INT-A-PAK (3 + 4)	INT-A-PAK
VS-GP100TS60SFPBF	Vishay Semiconductor Diodes Division	IGBT IGBT Type: PT, Trench Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 337A Power - Max: 781W Vce(on) (Max) @ Vge, Ic: 1.34V @ 15V, 100A Current - Collector Cutoff (Max): 150µA Input Capacitance (Cies) @ Vce: - Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: INT-A-Pak Supplier Device Package: INT-A-PAK	패키지: INT-A-Pak	재고4,288	Half Bridge	600V	337A	781W	1.34V @ 15V, 100A	150µA	-	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	INT-A-Pak	INT-A-PAK
VS-GB100LP120N	Vishay Semiconductor Diodes Division	IGBT 1200V 200A 658W INT-A-PAK IGBT Type: - Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 200A Power - Max: 658W Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 100A (Typ) Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 7.43nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: INT-A-Pak Supplier Device Package: INT-A-PAK	패키지: INT-A-Pak	재고3,584	Single	1200V	200A	658W	1.8V @ 15V, 100A (Typ)	1mA	7.43nF @ 25V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	INT-A-Pak	INT-A-PAK
VS-GT50TP120N	Vishay Semiconductor Diodes Division	IGBT 1200V 100A 405W INT-A-PAK IGBT Type: Trench Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 100A Power - Max: 405W Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 50A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 6.24nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: 175°C (TJ) Mounting Type: Chassis Mount Package / Case: INT-A-PAK (3 + 4) Supplier Device Package: INT-A-PAK	패키지: INT-A-PAK (3 + 4)	재고7,024	Half Bridge	1200V	100A	405W	2.35V @ 15V, 50A	5mA	6.24nF @ 30V	Standard	No	175°C (TJ)	Chassis Mount	INT-A-PAK (3 + 4)	INT-A-PAK
VS-GB50TP120N	Vishay Semiconductor Diodes Division	IGBT 1200V 100A 446W INT-A-PAK IGBT Type: - Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 100A Power - Max: 446W Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 4.29nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: INT-A-PAK (3 + 4) Supplier Device Package: INT-A-PAK	패키지: INT-A-PAK (3 + 4)	재고5,536	Half Bridge	1200V	100A	446W	2.15V @ 15V, 50A	5mA	4.29nF @ 25V	Standard	No	150°C (TJ)	Chassis Mount	INT-A-PAK (3 + 4)	INT-A-PAK
VS-100MT060WDF	Vishay Semiconductor Diodes Division	IGBT 600V 121A 462W MTP IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 121A Power - Max: 462W Vce(on) (Max) @ Vge, Ic: 2.29V @ 15V, 60A Current - Collector Cutoff (Max): 100µA Input Capacitance (Cies) @ Vce: 9.5nF @ 30V Input: Standard NTC Thermistor: Yes Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: 16-MTP Module Supplier Device Package: MTP	패키지: 16-MTP Module	재고3,408	-	600V	121A	462W	2.29V @ 15V, 60A	100µA	9.5nF @ 30V	Standard	Yes	150°C (TJ)	Chassis Mount	16-MTP Module	MTP
VS-70MT060WHTAPBF	Vishay Semiconductor Diodes Division	IGBT 600V 100A 347W MTP IGBT Type: NPT Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 100A Power - Max: 347W Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 140A Current - Collector Cutoff (Max): 700µA Input Capacitance (Cies) @ Vce: 8nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: 12-MTP Module Supplier Device Package: MTP	패키지: 12-MTP Module	재고4,000	Half Bridge	600V	100A	347W	3.4V @ 15V, 140A	700µA	8nF @ 30V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	12-MTP Module	MTP
VS-GB50LP120N	Vishay Semiconductor Diodes Division	IGBT 1200V 100A 446W INT-A-PAK IGBT Type: - Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 100A Power - Max: 446W Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A (Typ) Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 4.29nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: INT-A-PAK (3 + 4) Supplier Device Package: INT-A-PAK	패키지: INT-A-PAK (3 + 4)	재고3,456	Single	1200V	100A	446W	1.7V @ 15V, 50A (Typ)	1mA	4.29nF @ 25V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	INT-A-PAK (3 + 4)	INT-A-PAK
VS-70MT060WSP	Vishay Semiconductor Diodes Division	IGBT 600V 96A 378W MTP IGBT Type: - Configuration: Single Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 96A Power - Max: 378W Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A Current - Collector Cutoff (Max): 100µA Input Capacitance (Cies) @ Vce: 7.43nF @ 30V Input: Single Phase Bridge Rectifier NTC Thermistor: Yes Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: 12-MTP Module Supplier Device Package: MTP	패키지: 12-MTP Module	재고6,176	Single	600V	96A	378W	2.15V @ 15V, 40A	100µA	7.43nF @ 30V	Single Phase Bridge Rectifier	Yes	150°C (TJ)	Chassis Mount	12-MTP Module	MTP
VS-20MT120UFP	Vishay Semiconductor Diodes Division	IGBT 1200V 40A 240W MTP IGBT Type: NPT Configuration: Full Bridge Inverter Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 40A Power - Max: 240W Vce(on) (Max) @ Vge, Ic: 4.66V @ 15V, 40A Current - Collector Cutoff (Max): 250µA Input Capacitance (Cies) @ Vce: 3.79nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: 16-MTP Module Supplier Device Package: MTP	패키지: 16-MTP Module	재고3,456	Full Bridge Inverter	1200V	40A	240W	4.66V @ 15V, 40A	250µA	3.79nF @ 30V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	16-MTP Module	MTP
VS-20MT120UFAPBF	Vishay Semiconductor Diodes Division	IGBT 1200V 20A 240W MTP IGBT Type: NPT Configuration: Full Bridge Inverter Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 20A Power - Max: 240W Vce(on) (Max) @ Vge, Ic: 4.66V @ 15V, 40A Current - Collector Cutoff (Max): 250µA Input Capacitance (Cies) @ Vce: 3.79nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: 16-MTP Module Supplier Device Package: MTP	패키지: 16-MTP Module	재고5,952	Full Bridge Inverter	1200V	20A	240W	4.66V @ 15V, 40A	250µA	3.79nF @ 30V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	16-MTP Module	MTP
VS-GT140DA60U	Vishay Semiconductor Diodes Division	IGBT 600V 200A 652W SOT-227 IGBT Type: Trench Configuration: Single Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 200A Power - Max: 652W Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A Current - Collector Cutoff (Max): 100µA Input Capacitance (Cies) @ Vce: - Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227	패키지: SOT-227-4, miniBLOC	재고4,496	Single	600V	200A	652W	2V @ 15V, 100A	100µA	-	Standard	No	-40°C ~ 175°C (TJ)	Chassis Mount	SOT-227-4, miniBLOC	SOT-227
VS-25MT060WFAPBF	Vishay Semiconductor Diodes Division	IGBT 600V 69A 195W MTP IGBT Type: - Configuration: Full Bridge Inverter Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 69A Power - Max: 195W Vce(on) (Max) @ Vge, Ic: 3.25V @ 15V, 50A Current - Collector Cutoff (Max): 250µA Input Capacitance (Cies) @ Vce: 5.42nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: 16-MTP Module Supplier Device Package: MTP	패키지: 16-MTP Module	재고5,008	Full Bridge Inverter	600V	69A	195W	3.25V @ 15V, 50A	250µA	5.42nF @ 30V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	16-MTP Module	MTP
VS-100MT060WSP	Vishay Semiconductor Diodes Division	IGBT IGBT Type: - Configuration: Single Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 107A Power - Max: 403W Vce(on) (Max) @ Vge, Ic: 2.49V @ 15V, 60A Current - Collector Cutoff (Max): 100µA Input Capacitance (Cies) @ Vce: 9.5nF @ 30V Input: Single Phase Bridge Rectifier NTC Thermistor: Yes Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 12-MTP Module Supplier Device Package: MTP	패키지: 12-MTP Module	재고3,680	Single	600V	107A	403W	2.49V @ 15V, 60A	100µA	9.5nF @ 30V	Single Phase Bridge Rectifier	Yes	150°C (TJ)	Through Hole	12-MTP Module	MTP
VS-CPV364M4UPBF	Vishay Semiconductor Diodes Division	MOD IGBT 3PHASE INV 600V SIP IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 20A Power - Max: 63W Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A Current - Collector Cutoff (Max): 250µA Input Capacitance (Cies) @ Vce: 2.1nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 19-SIP (13 Leads), IMS-2 Supplier Device Package: IMS-2	패키지: 19-SIP (13 Leads), IMS-2	재고5,312	-	600V	20A	63W	2.1V @ 15V, 10A	250µA	2.1nF @ 30V	Standard	No	-40°C ~ 150°C (TJ)	Through Hole	19-SIP (13 Leads), IMS-2	IMS-2
VS-CPV363M4UPBF	Vishay Semiconductor Diodes Division	MOD IGBT 3PHASE INV 600V SIP IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 13A Power - Max: 36W Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 6.8A Current - Collector Cutoff (Max): 250µA Input Capacitance (Cies) @ Vce: 1.1nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 19-SIP (13 Leads), IMS-2 Supplier Device Package: IMS-2	패키지: 19-SIP (13 Leads), IMS-2	재고3,520	-	600V	13A	36W	2.2V @ 15V, 6.8A	250µA	1.1nF @ 30V	Standard	No	-40°C ~ 150°C (TJ)	Through Hole	19-SIP (13 Leads), IMS-2	IMS-2
VS-CPV363M4FPBF	Vishay Semiconductor Diodes Division	MOD IGBT 3PHASE INV 600V SIP IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: - NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 19-SIP (13 Leads), IMS-2 Supplier Device Package: IMS-2	패키지: 19-SIP (13 Leads), IMS-2	재고3,472	-	-	-	-	-	-	-	-	No	-40°C ~ 150°C (TJ)	Through Hole	19-SIP (13 Leads), IMS-2	IMS-2
VS-GB15XP120KTPBF	Vishay Semiconductor Diodes Division	IGBT 1200V 30A 187W MTP IGBT Type: NPT Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 30A Power - Max: 187W Vce(on) (Max) @ Vge, Ic: 3.66V @ 15V, 30A Current - Collector Cutoff (Max): 250µA Input Capacitance (Cies) @ Vce: 1.95nF @ 30V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: 12-MTP Module Supplier Device Package: MTP	패키지: 12-MTP Module	재고4,112	Three Phase Inverter	1200V	30A	187W	3.66V @ 15V, 30A	250µA	1.95nF @ 30V	Standard	Yes	-40°C ~ 150°C (TJ)	Chassis Mount	12-MTP Module	MTP
VS-CPV362M4UPBF	Vishay Semiconductor Diodes Division	MOD IGBT 3PHASE INV 600V SIP IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 7.2A Power - Max: 23W Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 3.9A Current - Collector Cutoff (Max): 250µA Input Capacitance (Cies) @ Vce: 0.53nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 19-SIP (13 Leads), IMS-2 Supplier Device Package: IMS-2	패키지: 19-SIP (13 Leads), IMS-2	재고5,840	-	600V	7.2A	23W	2.2V @ 15V, 3.9A	250µA	0.53nF @ 30V	Standard	No	-40°C ~ 150°C (TJ)	Through Hole	19-SIP (13 Leads), IMS-2	IMS-2
VS-CPV362M4KPBF	Vishay Semiconductor Diodes Division	MOD IGBT 3PHASE INV 600V SIP IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: - NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 19-SIP (13 Leads), IMS-2 Supplier Device Package: IMS-2	패키지: 19-SIP (13 Leads), IMS-2	재고7,040	-	-	-	-	-	-	-	-	No	-40°C ~ 150°C (TJ)	Through Hole	19-SIP (13 Leads), IMS-2	IMS-2
CPV364M4U	Vishay Semiconductor Diodes Division	IGBT SIP MODULE 600V 10A IMS-2 IGBT Type: - Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 20A Power - Max: 63W Vce(on) (Max) @ Vge, Ic: 1.84V @ 15V, 20A Current - Collector Cutoff (Max): 250µA Input Capacitance (Cies) @ Vce: 2.1nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 19-SIP (13 Leads), IMS-2 Supplier Device Package: IMS-2	패키지: 19-SIP (13 Leads), IMS-2	재고3,408	Three Phase Inverter	600V	20A	63W	1.84V @ 15V, 20A	250µA	2.1nF @ 30V	Standard	No	-40°C ~ 150°C (TJ)	Through Hole	19-SIP (13 Leads), IMS-2	IMS-2
CPV363M4K	Vishay Semiconductor Diodes Division	IGBT SIP MODULE 600V 6A IMS-2 IGBT Type: - Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 11A Power - Max: 36W Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 11A Current - Collector Cutoff (Max): 250µA Input Capacitance (Cies) @ Vce: 0.74nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 19-SIP (13 Leads), IMS-2 Supplier Device Package: IMS-2	패키지: 19-SIP (13 Leads), IMS-2	재고4,080	Three Phase Inverter	600V	11A	36W	2V @ 15V, 11A	250µA	0.74nF @ 30V	Standard	No	-40°C ~ 150°C (TJ)	Through Hole	19-SIP (13 Leads), IMS-2	IMS-2

VS-GT200TP065N

Vishay Semiconductor Diodes Division

IGBT

IGBT Type: Trench
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 221A
Power - Max: 600W
Vce(on) (Max) @ Vge, Ic: 2.12V @ 15V, 200A
Current - Collector Cutoff (Max): 60µA
Input Capacitance (Cies) @ Vce: -
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: INT-A-Pak
Supplier Device Package: INT-A-PAK

패키지: INT-A-Pak

재고3,904

Half Bridge

650V

221A

600W

2.12V @ 15V, 200A

60µA

-

Standard

No

-40°C ~ 175°C (TJ)

Chassis Mount

INT-A-Pak

INT-A-PAK

VS-40MT120UHTAPBF

Vishay Semiconductor Diodes Division

IGBT 1200V 80A 463W MTP

IGBT Type: NPT
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 80A
Power - Max: 463W
Vce(on) (Max) @ Vge, Ic: 4.91V @ 15V, 80A
Current - Collector Cutoff (Max): 250µA
Input Capacitance (Cies) @ Vce: 8.28nF @ 30V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 12-MTP Module
Supplier Device Package: MTP

패키지: 12-MTP Module

재고2,768

Half Bridge

1200V

80A

463W

4.91V @ 15V, 80A

250µA

8.28nF @ 30V

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

12-MTP Module

MTP

VS-GB100TS60NPBF

Vishay Semiconductor Diodes Division

IGBT 600V 108A 390W INT-A-PAK

IGBT Type: NPT
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 108A
Power - Max: 390W
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 100A
Current - Collector Cutoff (Max): 100µA
Input Capacitance (Cies) @ Vce: -
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: INT-A-Pak
Supplier Device Package: INT-A-PAK

패키지: INT-A-Pak

재고7,424

Half Bridge

600V

108A

390W

2.85V @ 15V, 100A

100µA

-

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

INT-A-Pak

INT-A-PAK

VS-GB100TP120N

Vishay Semiconductor Diodes Division

IGBT 1200V 200A 650W INT-A-PAK

IGBT Type: -
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 200A
Power - Max: 650W
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
Current - Collector Cutoff (Max): 5mA
Input Capacitance (Cies) @ Vce: 7.43nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: INT-A-Pak
Supplier Device Package: INT-A-PAK

패키지: INT-A-Pak

재고7,408

Half Bridge

1200V

200A

650W

2.2V @ 15V, 100A

5mA

7.43nF @ 25V

Standard

No

150°C (TJ)

Chassis Mount

INT-A-Pak

INT-A-PAK

VS-GB150TS60NPBF

Vishay Semiconductor Diodes Division

IGBT 600V 138A 500W INT-A-PAK

IGBT Type: NPT
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 138A
Power - Max: 500W
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 150A
Current - Collector Cutoff (Max): 200µA
Input Capacitance (Cies) @ Vce: -
Input: Standard
NTC Thermistor: No
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: INT-A-PAK (3 + 4)
Supplier Device Package: INT-A-PAK

패키지: INT-A-PAK (3 + 4)

재고3,440

Half Bridge

600V

138A

500W

3V @ 15V, 150A

200µA

-

Standard

No

150°C (TJ)

Chassis Mount

INT-A-PAK (3 + 4)

INT-A-PAK

VS-150MT060WDF

Vishay Semiconductor Diodes Division

DIODE GEN PURP

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 138A
Power - Max: 543W
Vce(on) (Max) @ Vge, Ic: 2.48V @ 15V, 80A
Current - Collector Cutoff (Max): 100µA
Input Capacitance (Cies) @ Vce: 14nF @ 30V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 12-MTP Module
Supplier Device Package: MTP

패키지: 12-MTP Module

재고6,224

-

600V

138A

543W

2.48V @ 15V, 80A

100µA

14nF @ 30V

Standard

Yes

150°C (TJ)

Chassis Mount

12-MTP Module

MTP

VS-GB75TP120U

Vishay Semiconductor Diodes Division

IGBT 1200V 105A 500W INT-A-PAK

IGBT Type: -
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 105A
Power - Max: 500W
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 75A (Typ)
Current - Collector Cutoff (Max): 2mA
Input Capacitance (Cies) @ Vce: 4.3nF @ 30V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: INT-A-PAK (3 + 4)
Supplier Device Package: INT-A-PAK

패키지: INT-A-PAK (3 + 4)

재고2,608

Half Bridge

1200V

105A

500W

3.2V @ 15V, 75A (Typ)

2mA

4.3nF @ 30V

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

INT-A-PAK (3 + 4)

INT-A-PAK

VS-GP100TS60SFPBF

Vishay Semiconductor Diodes Division

IGBT

IGBT Type: PT, Trench
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 337A
Power - Max: 781W
Vce(on) (Max) @ Vge, Ic: 1.34V @ 15V, 100A
Current - Collector Cutoff (Max): 150µA
Input Capacitance (Cies) @ Vce: -
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: INT-A-Pak
Supplier Device Package: INT-A-PAK

패키지: INT-A-Pak

재고4,288

Half Bridge

600V

337A

781W

1.34V @ 15V, 100A

150µA

-

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

INT-A-Pak

INT-A-PAK

VS-GB100LP120N

Vishay Semiconductor Diodes Division

IGBT 1200V 200A 658W INT-A-PAK

IGBT Type: -
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 200A
Power - Max: 658W
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 100A (Typ)
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 7.43nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: INT-A-Pak
Supplier Device Package: INT-A-PAK

패키지: INT-A-Pak

재고3,584

Single

1200V

200A

658W

1.8V @ 15V, 100A (Typ)

1mA

7.43nF @ 25V

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

INT-A-Pak

INT-A-PAK

VS-GT50TP120N

Vishay Semiconductor Diodes Division

IGBT 1200V 100A 405W INT-A-PAK

IGBT Type: Trench
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 100A
Power - Max: 405W
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 50A
Current - Collector Cutoff (Max): 5mA
Input Capacitance (Cies) @ Vce: 6.24nF @ 30V
Input: Standard
NTC Thermistor: No
Operating Temperature: 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: INT-A-PAK (3 + 4)
Supplier Device Package: INT-A-PAK

패키지: INT-A-PAK (3 + 4)

재고7,024

Half Bridge

1200V

100A

405W

2.35V @ 15V, 50A

5mA

6.24nF @ 30V

Standard

No

175°C (TJ)

Chassis Mount

INT-A-PAK (3 + 4)

INT-A-PAK

VS-GB50TP120N

Vishay Semiconductor Diodes Division

IGBT 1200V 100A 446W INT-A-PAK

IGBT Type: -
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 100A
Power - Max: 446W
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
Current - Collector Cutoff (Max): 5mA
Input Capacitance (Cies) @ Vce: 4.29nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: INT-A-PAK (3 + 4)
Supplier Device Package: INT-A-PAK

패키지: INT-A-PAK (3 + 4)

재고5,536

Half Bridge

1200V

100A

446W

2.15V @ 15V, 50A

5mA

4.29nF @ 25V

Standard

No

150°C (TJ)

Chassis Mount

INT-A-PAK (3 + 4)

INT-A-PAK

VS-100MT060WDF

Vishay Semiconductor Diodes Division

IGBT 600V 121A 462W MTP

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 121A
Power - Max: 462W
Vce(on) (Max) @ Vge, Ic: 2.29V @ 15V, 60A
Current - Collector Cutoff (Max): 100µA
Input Capacitance (Cies) @ Vce: 9.5nF @ 30V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 16-MTP Module
Supplier Device Package: MTP

패키지: 16-MTP Module

재고3,408

-

600V

121A

462W

2.29V @ 15V, 60A

100µA

9.5nF @ 30V

Standard

Yes

150°C (TJ)

Chassis Mount

16-MTP Module

MTP

VS-70MT060WHTAPBF

Vishay Semiconductor Diodes Division

IGBT 600V 100A 347W MTP

IGBT Type: NPT
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 100A
Power - Max: 347W
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 140A
Current - Collector Cutoff (Max): 700µA
Input Capacitance (Cies) @ Vce: 8nF @ 30V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 12-MTP Module
Supplier Device Package: MTP

패키지: 12-MTP Module

재고4,000

Half Bridge

600V

100A

347W

3.4V @ 15V, 140A

700µA

8nF @ 30V

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

12-MTP Module

MTP

VS-GB50LP120N

Vishay Semiconductor Diodes Division

IGBT 1200V 100A 446W INT-A-PAK

IGBT Type: -
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 100A
Power - Max: 446W
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A (Typ)
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 4.29nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: INT-A-PAK (3 + 4)
Supplier Device Package: INT-A-PAK

패키지: INT-A-PAK (3 + 4)

재고3,456

Single

1200V

100A

446W

1.7V @ 15V, 50A (Typ)

1mA

4.29nF @ 25V

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

INT-A-PAK (3 + 4)

INT-A-PAK

VS-70MT060WSP

Vishay Semiconductor Diodes Division

IGBT 600V 96A 378W MTP

IGBT Type: -
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 96A
Power - Max: 378W
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A
Current - Collector Cutoff (Max): 100µA
Input Capacitance (Cies) @ Vce: 7.43nF @ 30V
Input: Single Phase Bridge Rectifier
NTC Thermistor: Yes
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 12-MTP Module
Supplier Device Package: MTP

패키지: 12-MTP Module

재고6,176

Single

600V

96A

378W

2.15V @ 15V, 40A

100µA

7.43nF @ 30V

Single Phase Bridge Rectifier

Yes

150°C (TJ)

Chassis Mount

12-MTP Module

MTP

VS-20MT120UFP

Vishay Semiconductor Diodes Division

IGBT 1200V 40A 240W MTP

IGBT Type: NPT
Configuration: Full Bridge Inverter
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 40A
Power - Max: 240W
Vce(on) (Max) @ Vge, Ic: 4.66V @ 15V, 40A
Current - Collector Cutoff (Max): 250µA
Input Capacitance (Cies) @ Vce: 3.79nF @ 30V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 16-MTP Module
Supplier Device Package: MTP

패키지: 16-MTP Module

재고3,456

Full Bridge Inverter

1200V

40A

240W

4.66V @ 15V, 40A

250µA

3.79nF @ 30V

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

16-MTP Module

MTP

VS-20MT120UFAPBF

Vishay Semiconductor Diodes Division

IGBT 1200V 20A 240W MTP

IGBT Type: NPT
Configuration: Full Bridge Inverter
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 20A
Power - Max: 240W
Vce(on) (Max) @ Vge, Ic: 4.66V @ 15V, 40A
Current - Collector Cutoff (Max): 250µA
Input Capacitance (Cies) @ Vce: 3.79nF @ 30V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 16-MTP Module
Supplier Device Package: MTP

패키지: 16-MTP Module

재고5,952

Full Bridge Inverter

1200V

20A

240W

4.66V @ 15V, 40A

250µA

3.79nF @ 30V

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

16-MTP Module

MTP

VS-GT140DA60U

Vishay Semiconductor Diodes Division

IGBT 600V 200A 652W SOT-227

IGBT Type: Trench
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 200A
Power - Max: 652W
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
Current - Collector Cutoff (Max): 100µA
Input Capacitance (Cies) @ Vce: -
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227

패키지: SOT-227-4, miniBLOC

재고4,496

Single

600V

200A

652W

2V @ 15V, 100A

100µA

-

Standard

No

-40°C ~ 175°C (TJ)

Chassis Mount

SOT-227-4, miniBLOC

SOT-227

VS-25MT060WFAPBF

Vishay Semiconductor Diodes Division

IGBT 600V 69A 195W MTP

IGBT Type: -
Configuration: Full Bridge Inverter
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 69A
Power - Max: 195W
Vce(on) (Max) @ Vge, Ic: 3.25V @ 15V, 50A
Current - Collector Cutoff (Max): 250µA
Input Capacitance (Cies) @ Vce: 5.42nF @ 30V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 16-MTP Module
Supplier Device Package: MTP

패키지: 16-MTP Module

재고5,008

Full Bridge Inverter

600V

69A

195W

3.25V @ 15V, 50A

250µA

5.42nF @ 30V

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

16-MTP Module

MTP

VS-100MT060WSP

Vishay Semiconductor Diodes Division

IGBT

IGBT Type: -
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 107A
Power - Max: 403W
Vce(on) (Max) @ Vge, Ic: 2.49V @ 15V, 60A
Current - Collector Cutoff (Max): 100µA
Input Capacitance (Cies) @ Vce: 9.5nF @ 30V
Input: Single Phase Bridge Rectifier
NTC Thermistor: Yes
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 12-MTP Module
Supplier Device Package: MTP

패키지: 12-MTP Module

재고3,680

Single

600V

107A

403W

2.49V @ 15V, 60A

100µA

9.5nF @ 30V

Single Phase Bridge Rectifier

Yes

150°C (TJ)

Through Hole

12-MTP Module

MTP

VS-CPV364M4UPBF

Vishay Semiconductor Diodes Division

MOD IGBT 3PHASE INV 600V SIP

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 20A
Power - Max: 63W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
Current - Collector Cutoff (Max): 250µA
Input Capacitance (Cies) @ Vce: 2.1nF @ 30V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 19-SIP (13 Leads), IMS-2
Supplier Device Package: IMS-2

패키지: 19-SIP (13 Leads), IMS-2

재고5,312

-

600V

20A

63W

2.1V @ 15V, 10A

250µA

2.1nF @ 30V

Standard

No

-40°C ~ 150°C (TJ)

Through Hole

19-SIP (13 Leads), IMS-2

IMS-2

VS-CPV363M4UPBF

Vishay Semiconductor Diodes Division

MOD IGBT 3PHASE INV 600V SIP

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 13A
Power - Max: 36W
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 6.8A
Current - Collector Cutoff (Max): 250µA
Input Capacitance (Cies) @ Vce: 1.1nF @ 30V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 19-SIP (13 Leads), IMS-2
Supplier Device Package: IMS-2

패키지: 19-SIP (13 Leads), IMS-2

재고3,520

-

600V

13A

36W

2.2V @ 15V, 6.8A

250µA

1.1nF @ 30V

Standard

No

-40°C ~ 150°C (TJ)

Through Hole

19-SIP (13 Leads), IMS-2

IMS-2

VS-CPV363M4FPBF

Vishay Semiconductor Diodes Division

MOD IGBT 3PHASE INV 600V SIP

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: -
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 19-SIP (13 Leads), IMS-2
Supplier Device Package: IMS-2

패키지: 19-SIP (13 Leads), IMS-2

재고3,472

-

No

-40°C ~ 150°C (TJ)

Through Hole

19-SIP (13 Leads), IMS-2

IMS-2

VS-GB15XP120KTPBF

Vishay Semiconductor Diodes Division

IGBT 1200V 30A 187W MTP

IGBT Type: NPT
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 30A
Power - Max: 187W
Vce(on) (Max) @ Vge, Ic: 3.66V @ 15V, 30A
Current - Collector Cutoff (Max): 250µA
Input Capacitance (Cies) @ Vce: 1.95nF @ 30V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 12-MTP Module
Supplier Device Package: MTP

패키지: 12-MTP Module

재고4,112

Three Phase Inverter

1200V

30A

187W

3.66V @ 15V, 30A

250µA

1.95nF @ 30V

Standard

Yes

-40°C ~ 150°C (TJ)

Chassis Mount

12-MTP Module

MTP

VS-CPV362M4UPBF

Vishay Semiconductor Diodes Division

MOD IGBT 3PHASE INV 600V SIP

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 7.2A
Power - Max: 23W
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 3.9A
Current - Collector Cutoff (Max): 250µA
Input Capacitance (Cies) @ Vce: 0.53nF @ 30V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 19-SIP (13 Leads), IMS-2
Supplier Device Package: IMS-2

패키지: 19-SIP (13 Leads), IMS-2

재고5,840

-

600V

7.2A

23W

2.2V @ 15V, 3.9A

250µA

0.53nF @ 30V

Standard

No

-40°C ~ 150°C (TJ)

Through Hole

19-SIP (13 Leads), IMS-2

IMS-2

VS-CPV362M4KPBF

Vishay Semiconductor Diodes Division

MOD IGBT 3PHASE INV 600V SIP

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: -
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 19-SIP (13 Leads), IMS-2
Supplier Device Package: IMS-2

패키지: 19-SIP (13 Leads), IMS-2

재고7,040

-

No

-40°C ~ 150°C (TJ)

Through Hole

19-SIP (13 Leads), IMS-2

IMS-2

CPV364M4U

Vishay Semiconductor Diodes Division

IGBT SIP MODULE 600V 10A IMS-2

IGBT Type: -
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 20A
Power - Max: 63W
Vce(on) (Max) @ Vge, Ic: 1.84V @ 15V, 20A
Current - Collector Cutoff (Max): 250µA
Input Capacitance (Cies) @ Vce: 2.1nF @ 30V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 19-SIP (13 Leads), IMS-2
Supplier Device Package: IMS-2

패키지: 19-SIP (13 Leads), IMS-2

재고3,408

Three Phase Inverter

600V

20A

63W

1.84V @ 15V, 20A

250µA

2.1nF @ 30V

Standard

No

-40°C ~ 150°C (TJ)

Through Hole

19-SIP (13 Leads), IMS-2

IMS-2

CPV363M4K

Vishay Semiconductor Diodes Division

IGBT SIP MODULE 600V 6A IMS-2

IGBT Type: -
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 11A
Power - Max: 36W
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 11A
Current - Collector Cutoff (Max): 250µA
Input Capacitance (Cies) @ Vce: 0.74nF @ 30V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 19-SIP (13 Leads), IMS-2
Supplier Device Package: IMS-2

패키지: 19-SIP (13 Leads), IMS-2

재고4,080

Three Phase Inverter

600V

11A

36W

2V @ 15V, 11A

250µA

0.74nF @ 30V

Standard

No

-40°C ~ 150°C (TJ)

Through Hole

19-SIP (13 Leads), IMS-2

IMS-2