페이지 3 - Vishay Semiconductor Diodes Division 제품 - 트랜지스터 - IGBT - 모듈

부품 번호	제조업체	설명	패키지	재고	Configuration	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Power - Max	Vce(on) (Max) @ Vge, Ic	Current - Collector Cutoff (Max)	Input Capacitance (Cies) @ Vce	Input	NTC Thermistor	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
VS-GB200NH120N	Vishay Semiconductor Diodes Division	IGBT 1200V 420A 1562W INT-A-PAK IGBT Type: - Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 420A Power - Max: 1562W Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 200A (Typ) Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 18nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Double INT-A-PAK (3 + 4) Supplier Device Package: Double INT-A-PAK	패키지: Double INT-A-PAK (3 + 4)	재고2,080	Single	1200V	420A	1562W	1.8V @ 15V, 200A (Typ)	5mA	18nF @ 25V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	Double INT-A-PAK (3 + 4)	Double INT-A-PAK
VS-GB200LH120N	Vishay Semiconductor Diodes Division	IGBT 1200V 370A 1562W INT-A-PAK IGBT Type: - Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 370A Power - Max: 1562W Vce(on) (Max) @ Vge, Ic: 2.07V @ 15V, 200A (Typ) Current - Collector Cutoff (Max): 100nA Input Capacitance (Cies) @ Vce: 18nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Double INT-A-PAK (3 + 4) Supplier Device Package: Double INT-A-PAK	패키지: Double INT-A-PAK (3 + 4)	재고3,520	Single	1200V	370A	1562W	2.07V @ 15V, 200A (Typ)	100nA	18nF @ 25V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	Double INT-A-PAK (3 + 4)	Double INT-A-PAK
VS-GA200TH60S	Vishay Semiconductor Diodes Division	IGBT 600V 260A 1042W INT-A-PAK IGBT Type: - Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 260A Power - Max: 1042W Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A (Typ) Current - Collector Cutoff (Max): 5µA Input Capacitance (Cies) @ Vce: 13.1nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Double INT-A-PAK (3 + 4) Supplier Device Package: Double INT-A-PAK	패키지: Double INT-A-PAK (3 + 4)	재고2,832	Half Bridge	600V	260A	1042W	1.9V @ 15V, 200A (Typ)	5µA	13.1nF @ 25V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	Double INT-A-PAK (3 + 4)	Double INT-A-PAK
VS-GB100TH120U	Vishay Semiconductor Diodes Division	IGBT 1200V 200A 1136W INT-A-PAK IGBT Type: NPT Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 200A Power - Max: 1136W Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 100A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 8.45nF @ 20V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Double INT-A-PAK (3 + 4) Supplier Device Package: Double INT-A-PAK	패키지: Double INT-A-PAK (3 + 4)	재고4,128	Half Bridge	1200V	200A	1136W	3.6V @ 15V, 100A	5mA	8.45nF @ 20V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	Double INT-A-PAK (3 + 4)	Double INT-A-PAK
VS-GB100TH120N	Vishay Semiconductor Diodes Division	IGBT 1200V 200A 833W INT-A-PAK IGBT Type: - Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 200A Power - Max: 833W Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 100A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 8.58nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Double INT-A-PAK (3 + 4) Supplier Device Package: Double INT-A-PAK	패키지: Double INT-A-PAK (3 + 4)	재고2,928	Half Bridge	1200V	200A	833W	2.35V @ 15V, 100A	5mA	8.58nF @ 25V	Standard	No	150°C (TJ)	Chassis Mount	Double INT-A-PAK (3 + 4)	Double INT-A-PAK
VS-GB75YF120UT	Vishay Semiconductor Diodes Division	IGBT 1200V 100A 480W ECONO IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 100A Power - Max: 480W Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 100A Current - Collector Cutoff (Max): 250µA Input Capacitance (Cies) @ Vce: - Input: Standard NTC Thermistor: Yes Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: ECONO2 4PACK	패키지: Module	재고7,536	-	1200V	100A	480W	4.5V @ 15V, 100A	250µA	-	Standard	Yes	150°C (TJ)	Chassis Mount	Module	ECONO2 4PACK
VS-GB75YF120N	Vishay Semiconductor Diodes Division	IGBT 1200V 100A 480W ECONO IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 100A Power - Max: 480W Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 100A Current - Collector Cutoff (Max): 250µA Input Capacitance (Cies) @ Vce: - Input: Standard NTC Thermistor: No Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: ECONO2 4PACK	패키지: Module	재고2,336	-	1200V	100A	480W	4.5V @ 15V, 100A	250µA	-	Standard	No	150°C (TJ)	Chassis Mount	Module	ECONO2 4PACK
VS-GB100LH120N	Vishay Semiconductor Diodes Division	IGBT 1200V 200A 833W INT-A-PAK IGBT Type: - Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 200A Power - Max: 833W Vce(on) (Max) @ Vge, Ic: 1.77V @ 15V, 100A (Typ) Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 8.96nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Double INT-A-PAK (3 + 4) Supplier Device Package: Double INT-A-PAK	패키지: Double INT-A-PAK (3 + 4)	재고2,544	Single	1200V	200A	833W	1.77V @ 15V, 100A (Typ)	1mA	8.96nF @ 25V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	Double INT-A-PAK (3 + 4)	Double INT-A-PAK
VS-GB100NH120N	Vishay Semiconductor Diodes Division	IGBT 1200V 200A 833W INT-A-PAK IGBT Type: - Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 200A Power - Max: 833W Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 100A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 8.58nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Double INT-A-PAK (3 + 4) Supplier Device Package: Double INT-A-PAK	패키지: Double INT-A-PAK (3 + 4)	재고3,360	Single	1200V	200A	833W	2.35V @ 15V, 100A	5mA	8.58nF @ 25V	Standard	No	150°C (TJ)	Chassis Mount	Double INT-A-PAK (3 + 4)	Double INT-A-PAK
VS-GB400TH120U	Vishay Semiconductor Diodes Division	IGBT 1200V 660A 2660W INT-A-PAK IGBT Type: NPT Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 660A Power - Max: 2660W Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 400A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 33.7nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Double INT-A-PAK (3 + 4) Supplier Device Package: Double INT-A-PAK	패키지: Double INT-A-PAK (3 + 4)	재고2,176	Half Bridge	1200V	660A	2660W	3.6V @ 15V, 400A	5mA	33.7nF @ 30V	Standard	No	150°C (TJ)	Chassis Mount	Double INT-A-PAK (3 + 4)	Double INT-A-PAK
VS-GB400TH120N	Vishay Semiconductor Diodes Division	IGBT 1200V 800A 2604W INT-A-PAK IGBT Type: - Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 800A Power - Max: 2604W Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 400A (Typ) Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 32.7nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Double INT-A-PAK (3 + 4) Supplier Device Package: Double INT-A-PAK	패키지: Double INT-A-PAK (3 + 4)	재고6,128	Half Bridge	1200V	800A	2604W	1.9V @ 15V, 400A (Typ)	5mA	32.7nF @ 25V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	Double INT-A-PAK (3 + 4)	Double INT-A-PAK
VS-GB75TP120N	Vishay Semiconductor Diodes Division	IGBT 1200V 150A 543W INT-A-PAK IGBT Type: - Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 150A Power - Max: 543W Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 75A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 5.52nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: INT-A-PAK (3 + 4) Supplier Device Package: INT-A-PAK	패키지: INT-A-PAK (3 + 4)	재고6,704	Half Bridge	1200V	150A	543W	2.35V @ 15V, 75A	5mA	5.52nF @ 25V	Standard	No	150°C (TJ)	Chassis Mount	INT-A-PAK (3 + 4)	INT-A-PAK
VS-GB600AH120N	Vishay Semiconductor Diodes Division	IGBT 1200V 910A 3125W INT-A-PAK IGBT Type: - Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 910A Power - Max: 3125W Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 600A (Typ) Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 41nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Double INT-A-PAK (5) Supplier Device Package: Double INT-A-PAK	패키지: Double INT-A-PAK (5)	재고3,488	Single	1200V	910A	3125W	1.9V @ 15V, 600A (Typ)	5mA	41nF @ 25V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	Double INT-A-PAK (5)	Double INT-A-PAK
VS-GA400TD60S	Vishay Semiconductor Diodes Division	IGBT 600V 750A 1563W INT-A-PAK IGBT Type: - Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 750A Power - Max: 1563W Vce(on) (Max) @ Vge, Ic: 1.52V @ 15V, 400A Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: - Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Dual INT-A-PAK (3 + 8) Supplier Device Package: Dual INT-A-PAK	패키지: Dual INT-A-PAK (3 + 8)	재고7,968	Half Bridge	600V	750A	1563W	1.52V @ 15V, 400A	1mA	-	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	Dual INT-A-PAK (3 + 8)	Dual INT-A-PAK
VS-GT100TP60N	Vishay Semiconductor Diodes Division	IGBT 600V 160A 417W INT-A-PAK IGBT Type: Trench Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 160A Power - Max: 417W Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 7.71nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: 175°C (TJ) Mounting Type: Chassis Mount Package / Case: INT-A-PAK (3 + 4) Supplier Device Package: INT-A-PAK	패키지: INT-A-PAK (3 + 4)	재고2,320	Half Bridge	600V	160A	417W	2.1V @ 15V, 100A	5mA	7.71nF @ 30V	Standard	No	175°C (TJ)	Chassis Mount	INT-A-PAK (3 + 4)	INT-A-PAK
VS-GT300YH120N	Vishay Semiconductor Diodes Division	IGBT 1200V 341A 1042W DIAP IGBT Type: Trench Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 341A Power - Max: 1042W Vce(on) (Max) @ Vge, Ic: 2.17V @ 15V, 300A (Typ) Current - Collector Cutoff (Max): 300µA Input Capacitance (Cies) @ Vce: 36nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Double INT-A-PAK (3 + 8) Supplier Device Package: Double INT-A-PAK	패키지: Double INT-A-PAK (3 + 8)	재고6,176	Half Bridge	1200V	341A	1042W	2.17V @ 15V, 300A (Typ)	300µA	36nF @ 30V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	Double INT-A-PAK (3 + 8)	Double INT-A-PAK
VS-GB400AH120U	Vishay Semiconductor Diodes Division	IGBT 1200V 550A 2841W INT-A-PAK IGBT Type: - Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 550A Power - Max: 2841W Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 400A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 33.7nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Double INT-A-PAK (5) Supplier Device Package: Double INT-A-PAK	패키지: Double INT-A-PAK (5)	재고3,696	Single	1200V	550A	2841W	3.6V @ 15V, 400A	5mA	33.7nF @ 30V	Standard	No	150°C (TJ)	Chassis Mount	Double INT-A-PAK (5)	Double INT-A-PAK
VS-GB300NH120N	Vishay Semiconductor Diodes Division	IGBT 1200V 500A 1645W INT-A-PAK IGBT Type: - Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 500A Power - Max: 1645W Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 300A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 21.2nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Double INT-A-PAK (3 + 4) Supplier Device Package: Double INT-A-PAK	패키지: Double INT-A-PAK (3 + 4)	재고5,760	Single	1200V	500A	1645W	2.45V @ 15V, 300A	5mA	21.2nF @ 25V	Standard	No	150°C (TJ)	Chassis Mount	Double INT-A-PAK (3 + 4)	Double INT-A-PAK
VS-GB300LH120N	Vishay Semiconductor Diodes Division	IGBT 1200V 500A 1645W INT-A-PAK IGBT Type: - Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 500A Power - Max: 1645W Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 300A (Typ) Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 21.2nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Double INT-A-PAK (3 + 4) Supplier Device Package: Double INT-A-PAK	패키지: Double INT-A-PAK (3 + 4)	재고5,904	Single	1200V	500A	1645W	2V @ 15V, 300A (Typ)	5mA	21.2nF @ 25V	Standard	No	150°C (TJ)	Chassis Mount	Double INT-A-PAK (3 + 4)	Double INT-A-PAK
VS-GA300TD60S	Vishay Semiconductor Diodes Division	IGBT 600V 530A 1136W INT-A-PAK IGBT Type: - Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 530A Power - Max: 1136W Vce(on) (Max) @ Vge, Ic: 1.45V @ 15V, 300A Current - Collector Cutoff (Max): 750µA Input Capacitance (Cies) @ Vce: - Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Dual INT-A-PAK (3 + 8) Supplier Device Package: Dual INT-A-PAK	패키지: Dual INT-A-PAK (3 + 8)	재고2,144	Half Bridge	600V	530A	1136W	1.45V @ 15V, 300A	750µA	-	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	Dual INT-A-PAK (3 + 8)	Dual INT-A-PAK
VS-GP400TD60S	Vishay Semiconductor Diodes Division	IGBT IGBT Type: PT, Trench Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 758A Power - Max: 1563W Vce(on) (Max) @ Vge, Ic: 1.52V @ 15V, 400A Current - Collector Cutoff (Max): 200µA Input Capacitance (Cies) @ Vce: - Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Dual INT-A-PAK (3 + 8) Supplier Device Package: Dual INT-A-PAK	패키지: Dual INT-A-PAK (3 + 8)	재고5,728	Half Bridge	600V	758A	1563W	1.52V @ 15V, 400A	200µA	-	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	Dual INT-A-PAK (3 + 8)	Dual INT-A-PAK
VS-GT50TP60N	Vishay Semiconductor Diodes Division	IGBT 600V 85A 208W INT-A-PAK IGBT Type: Trench Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 85A Power - Max: 208W Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 3.03nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: 175°C (TJ) Mounting Type: Chassis Mount Package / Case: INT-A-PAK (3 + 4) Supplier Device Package: INT-A-PAK	패키지: INT-A-PAK (3 + 4)	재고3,536	Half Bridge	600V	85A	208W	2.1V @ 15V, 50A	1mA	3.03nF @ 30V	Standard	No	175°C (TJ)	Chassis Mount	INT-A-PAK (3 + 4)	INT-A-PAK
VS-GP300TD60S	Vishay Semiconductor Diodes Division	IGBT IGBT Type: PT, Trench Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 580A Power - Max: 1136W Vce(on) (Max) @ Vge, Ic: 1.45V @ 15V, 300A Current - Collector Cutoff (Max): 150µA Input Capacitance (Cies) @ Vce: - Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Dual INT-A-PAK (3 + 8) Supplier Device Package: Dual INT-A-PAK	패키지: Dual INT-A-PAK (3 + 8)	재고6,688	Half Bridge	600V	580A	1136W	1.45V @ 15V, 300A	150µA	-	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	Dual INT-A-PAK (3 + 8)	Dual INT-A-PAK
VS-GB150TH120U	Vishay Semiconductor Diodes Division	IGBT 1200V 280A 1147W INT-A-PAK IGBT Type: - Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 280A Power - Max: 1147W Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 150A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 12.7nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Double INT-A-PAK (3 + 4) Supplier Device Package: Double INT-A-PAK	패키지: Double INT-A-PAK (3 + 4)	재고3,312	Half Bridge	1200V	280A	1147W	3.6V @ 15V, 150A	5mA	12.7nF @ 30V	Standard	No	150°C (TJ)	Chassis Mount	Double INT-A-PAK (3 + 4)	Double INT-A-PAK
VS-GB50YF120N	Vishay Semiconductor Diodes Division	IGBT 1200V 66A 330W ECONO IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 66A Power - Max: 330W Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 75A Current - Collector Cutoff (Max): 250µA Input Capacitance (Cies) @ Vce: - Input: Standard NTC Thermistor: No Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: ECONO2 4PACK	패키지: Module	재고7,760	-	1200V	66A	330W	4.5V @ 15V, 75A	250µA	-	Standard	No	150°C (TJ)	Chassis Mount	Module	ECONO2 4PACK
VS-GB200TS60NPBF	Vishay Semiconductor Diodes Division	IGBT 600V 209A 781W INT-A-PAK IGBT Type: NPT Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 209A Power - Max: 781W Vce(on) (Max) @ Vge, Ic: 2.84V @ 15V, 200A Current - Collector Cutoff (Max): 200µA Input Capacitance (Cies) @ Vce: - Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: INT-A-PAK (3 + 4) Supplier Device Package: INT-A-PAK	패키지: INT-A-PAK (3 + 4)	재고4,784	Half Bridge	600V	209A	781W	2.84V @ 15V, 200A	200µA	-	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	INT-A-PAK (3 + 4)	INT-A-PAK
VS-GB150LH120N	Vishay Semiconductor Diodes Division	IGBT 1200V 300A 1389W INT-A-PAK IGBT Type: - Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 300A Power - Max: 1389W Vce(on) (Max) @ Vge, Ic: 1.87V @ 15V, 150A (Typ) Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 10.6nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Double INT-A-PAK (3 + 4) Supplier Device Package: Double INT-A-PAK	패키지: Double INT-A-PAK (3 + 4)	재고2,752	Single	1200V	300A	1389W	1.87V @ 15V, 150A (Typ)	1mA	10.6nF @ 25V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	Double INT-A-PAK (3 + 4)	Double INT-A-PAK
VS-20MT050XC	Vishay Semiconductor Diodes Division	MOD IGBT 20A 500V MTP IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: - NTC Thermistor: No Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,320	-	-	-	-	-	-	-	-	No	-	-	-	-

VS-GB200NH120N

Vishay Semiconductor Diodes Division

IGBT 1200V 420A 1562W INT-A-PAK

IGBT Type: -
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 420A
Power - Max: 1562W
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 200A (Typ)
Current - Collector Cutoff (Max): 5mA
Input Capacitance (Cies) @ Vce: 18nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Double INT-A-PAK (3 + 4)
Supplier Device Package: Double INT-A-PAK

패키지: Double INT-A-PAK (3 + 4)

재고2,080

Single

1200V

420A

1562W

1.8V @ 15V, 200A (Typ)

5mA

18nF @ 25V

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

Double INT-A-PAK (3 + 4)

Double INT-A-PAK

VS-GB200LH120N

Vishay Semiconductor Diodes Division

IGBT 1200V 370A 1562W INT-A-PAK

IGBT Type: -
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 370A
Power - Max: 1562W
Vce(on) (Max) @ Vge, Ic: 2.07V @ 15V, 200A (Typ)
Current - Collector Cutoff (Max): 100nA
Input Capacitance (Cies) @ Vce: 18nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Double INT-A-PAK (3 + 4)
Supplier Device Package: Double INT-A-PAK

패키지: Double INT-A-PAK (3 + 4)

재고3,520

Single

1200V

370A

1562W

2.07V @ 15V, 200A (Typ)

100nA

18nF @ 25V

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

Double INT-A-PAK (3 + 4)

Double INT-A-PAK

VS-GA200TH60S

Vishay Semiconductor Diodes Division

IGBT 600V 260A 1042W INT-A-PAK

IGBT Type: -
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 260A
Power - Max: 1042W
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A (Typ)
Current - Collector Cutoff (Max): 5µA
Input Capacitance (Cies) @ Vce: 13.1nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Double INT-A-PAK (3 + 4)
Supplier Device Package: Double INT-A-PAK

패키지: Double INT-A-PAK (3 + 4)

재고2,832

Half Bridge

600V

260A

1042W

1.9V @ 15V, 200A (Typ)

5µA

13.1nF @ 25V

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

Double INT-A-PAK (3 + 4)

Double INT-A-PAK

VS-GB100TH120U

Vishay Semiconductor Diodes Division

IGBT 1200V 200A 1136W INT-A-PAK

IGBT Type: NPT
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 200A
Power - Max: 1136W
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 100A
Current - Collector Cutoff (Max): 5mA
Input Capacitance (Cies) @ Vce: 8.45nF @ 20V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Double INT-A-PAK (3 + 4)
Supplier Device Package: Double INT-A-PAK

패키지: Double INT-A-PAK (3 + 4)

재고4,128

Half Bridge

1200V

200A

1136W

3.6V @ 15V, 100A

5mA

8.45nF @ 20V

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

Double INT-A-PAK (3 + 4)

Double INT-A-PAK

VS-GB100TH120N

Vishay Semiconductor Diodes Division

IGBT 1200V 200A 833W INT-A-PAK

IGBT Type: -
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 200A
Power - Max: 833W
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 100A
Current - Collector Cutoff (Max): 5mA
Input Capacitance (Cies) @ Vce: 8.58nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Double INT-A-PAK (3 + 4)
Supplier Device Package: Double INT-A-PAK

패키지: Double INT-A-PAK (3 + 4)

재고2,928

Half Bridge

1200V

200A

833W

2.35V @ 15V, 100A

5mA

8.58nF @ 25V

Standard

No

150°C (TJ)

Chassis Mount

Double INT-A-PAK (3 + 4)

Double INT-A-PAK

VS-GB75YF120UT

Vishay Semiconductor Diodes Division

IGBT 1200V 100A 480W ECONO

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 100A
Power - Max: 480W
Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 100A
Current - Collector Cutoff (Max): 250µA
Input Capacitance (Cies) @ Vce: -
Input: Standard
NTC Thermistor: Yes
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: ECONO2 4PACK

패키지: Module

재고7,536

-

1200V

100A

480W

4.5V @ 15V, 100A

250µA

-

Standard

Yes

150°C (TJ)

Chassis Mount

Module

ECONO2 4PACK

VS-GB75YF120N

Vishay Semiconductor Diodes Division

IGBT 1200V 100A 480W ECONO

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 100A
Power - Max: 480W
Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 100A
Current - Collector Cutoff (Max): 250µA
Input Capacitance (Cies) @ Vce: -
Input: Standard
NTC Thermistor: No
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: ECONO2 4PACK

패키지: Module

재고2,336

-

1200V

100A

480W

4.5V @ 15V, 100A

250µA

-

Standard

No

150°C (TJ)

Chassis Mount

Module

ECONO2 4PACK

VS-GB100LH120N

Vishay Semiconductor Diodes Division

IGBT 1200V 200A 833W INT-A-PAK

IGBT Type: -
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 200A
Power - Max: 833W
Vce(on) (Max) @ Vge, Ic: 1.77V @ 15V, 100A (Typ)
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 8.96nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Double INT-A-PAK (3 + 4)
Supplier Device Package: Double INT-A-PAK

패키지: Double INT-A-PAK (3 + 4)

재고2,544

Single

1200V

200A

833W

1.77V @ 15V, 100A (Typ)

1mA

8.96nF @ 25V

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

Double INT-A-PAK (3 + 4)

Double INT-A-PAK

VS-GB100NH120N

Vishay Semiconductor Diodes Division

IGBT 1200V 200A 833W INT-A-PAK

IGBT Type: -
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 200A
Power - Max: 833W
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 100A
Current - Collector Cutoff (Max): 5mA
Input Capacitance (Cies) @ Vce: 8.58nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Double INT-A-PAK (3 + 4)
Supplier Device Package: Double INT-A-PAK

패키지: Double INT-A-PAK (3 + 4)

재고3,360

Single

1200V

200A

833W

2.35V @ 15V, 100A

5mA

8.58nF @ 25V

Standard

No

150°C (TJ)

Chassis Mount

Double INT-A-PAK (3 + 4)

Double INT-A-PAK

VS-GB400TH120U

Vishay Semiconductor Diodes Division

IGBT 1200V 660A 2660W INT-A-PAK

IGBT Type: NPT
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 660A
Power - Max: 2660W
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 400A
Current - Collector Cutoff (Max): 5mA
Input Capacitance (Cies) @ Vce: 33.7nF @ 30V
Input: Standard
NTC Thermistor: No
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Double INT-A-PAK (3 + 4)
Supplier Device Package: Double INT-A-PAK

패키지: Double INT-A-PAK (3 + 4)

재고2,176

Half Bridge

1200V

660A

2660W

3.6V @ 15V, 400A

5mA

33.7nF @ 30V

Standard

No

150°C (TJ)

Chassis Mount

Double INT-A-PAK (3 + 4)

Double INT-A-PAK

VS-GB400TH120N

Vishay Semiconductor Diodes Division

IGBT 1200V 800A 2604W INT-A-PAK

IGBT Type: -
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 800A
Power - Max: 2604W
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 400A (Typ)
Current - Collector Cutoff (Max): 5mA
Input Capacitance (Cies) @ Vce: 32.7nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Double INT-A-PAK (3 + 4)
Supplier Device Package: Double INT-A-PAK

패키지: Double INT-A-PAK (3 + 4)

재고6,128

Half Bridge

1200V

800A

2604W

1.9V @ 15V, 400A (Typ)

5mA

32.7nF @ 25V

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

Double INT-A-PAK (3 + 4)

Double INT-A-PAK

VS-GB75TP120N

Vishay Semiconductor Diodes Division

IGBT 1200V 150A 543W INT-A-PAK

IGBT Type: -
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 150A
Power - Max: 543W
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 75A
Current - Collector Cutoff (Max): 5mA
Input Capacitance (Cies) @ Vce: 5.52nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: INT-A-PAK (3 + 4)
Supplier Device Package: INT-A-PAK

패키지: INT-A-PAK (3 + 4)

재고6,704

Half Bridge

1200V

150A

543W

2.35V @ 15V, 75A

5mA

5.52nF @ 25V

Standard

No

150°C (TJ)

Chassis Mount

INT-A-PAK (3 + 4)

INT-A-PAK

VS-GB600AH120N

Vishay Semiconductor Diodes Division

IGBT 1200V 910A 3125W INT-A-PAK

IGBT Type: -
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 910A
Power - Max: 3125W
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 600A (Typ)
Current - Collector Cutoff (Max): 5mA
Input Capacitance (Cies) @ Vce: 41nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Double INT-A-PAK (5)
Supplier Device Package: Double INT-A-PAK

패키지: Double INT-A-PAK (5)

재고3,488

Single

1200V

910A

3125W

1.9V @ 15V, 600A (Typ)

5mA

41nF @ 25V

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

Double INT-A-PAK (5)

Double INT-A-PAK

VS-GA400TD60S

Vishay Semiconductor Diodes Division

IGBT 600V 750A 1563W INT-A-PAK

IGBT Type: -
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 750A
Power - Max: 1563W
Vce(on) (Max) @ Vge, Ic: 1.52V @ 15V, 400A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: -
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Dual INT-A-PAK (3 + 8)
Supplier Device Package: Dual INT-A-PAK

패키지: Dual INT-A-PAK (3 + 8)

재고7,968

Half Bridge

600V

750A

1563W

1.52V @ 15V, 400A

1mA

-

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

Dual INT-A-PAK (3 + 8)

Dual INT-A-PAK

VS-GT100TP60N

Vishay Semiconductor Diodes Division

IGBT 600V 160A 417W INT-A-PAK

IGBT Type: Trench
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 160A
Power - Max: 417W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
Current - Collector Cutoff (Max): 5mA
Input Capacitance (Cies) @ Vce: 7.71nF @ 30V
Input: Standard
NTC Thermistor: No
Operating Temperature: 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: INT-A-PAK (3 + 4)
Supplier Device Package: INT-A-PAK

패키지: INT-A-PAK (3 + 4)

재고2,320

Half Bridge

600V

160A

417W

2.1V @ 15V, 100A

5mA

7.71nF @ 30V

Standard

No

175°C (TJ)

Chassis Mount

INT-A-PAK (3 + 4)

INT-A-PAK

VS-GT300YH120N

Vishay Semiconductor Diodes Division

IGBT 1200V 341A 1042W DIAP

IGBT Type: Trench
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 341A
Power - Max: 1042W
Vce(on) (Max) @ Vge, Ic: 2.17V @ 15V, 300A (Typ)
Current - Collector Cutoff (Max): 300µA
Input Capacitance (Cies) @ Vce: 36nF @ 30V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Double INT-A-PAK (3 + 8)
Supplier Device Package: Double INT-A-PAK

패키지: Double INT-A-PAK (3 + 8)

재고6,176

Half Bridge

1200V

341A

1042W

2.17V @ 15V, 300A (Typ)

300µA

36nF @ 30V

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

Double INT-A-PAK (3 + 8)

Double INT-A-PAK

VS-GB400AH120U

Vishay Semiconductor Diodes Division

IGBT 1200V 550A 2841W INT-A-PAK

IGBT Type: -
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 550A
Power - Max: 2841W
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 400A
Current - Collector Cutoff (Max): 5mA
Input Capacitance (Cies) @ Vce: 33.7nF @ 30V
Input: Standard
NTC Thermistor: No
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Double INT-A-PAK (5)
Supplier Device Package: Double INT-A-PAK

패키지: Double INT-A-PAK (5)

재고3,696

Single

1200V

550A

2841W

3.6V @ 15V, 400A

5mA

33.7nF @ 30V

Standard

No

150°C (TJ)

Chassis Mount

Double INT-A-PAK (5)

Double INT-A-PAK

VS-GB300NH120N

Vishay Semiconductor Diodes Division

IGBT 1200V 500A 1645W INT-A-PAK

IGBT Type: -
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 500A
Power - Max: 1645W
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 300A
Current - Collector Cutoff (Max): 5mA
Input Capacitance (Cies) @ Vce: 21.2nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Double INT-A-PAK (3 + 4)
Supplier Device Package: Double INT-A-PAK

패키지: Double INT-A-PAK (3 + 4)

재고5,760

Single

1200V

500A

1645W

2.45V @ 15V, 300A

5mA

21.2nF @ 25V

Standard

No

150°C (TJ)

Chassis Mount

Double INT-A-PAK (3 + 4)

Double INT-A-PAK

VS-GB300LH120N

Vishay Semiconductor Diodes Division

IGBT 1200V 500A 1645W INT-A-PAK

IGBT Type: -
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 500A
Power - Max: 1645W
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 300A (Typ)
Current - Collector Cutoff (Max): 5mA
Input Capacitance (Cies) @ Vce: 21.2nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Double INT-A-PAK (3 + 4)
Supplier Device Package: Double INT-A-PAK

패키지: Double INT-A-PAK (3 + 4)

재고5,904

Single

1200V

500A

1645W

2V @ 15V, 300A (Typ)

5mA

21.2nF @ 25V

Standard

No

150°C (TJ)

Chassis Mount

Double INT-A-PAK (3 + 4)

Double INT-A-PAK

VS-GA300TD60S

Vishay Semiconductor Diodes Division

IGBT 600V 530A 1136W INT-A-PAK

IGBT Type: -
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 530A
Power - Max: 1136W
Vce(on) (Max) @ Vge, Ic: 1.45V @ 15V, 300A
Current - Collector Cutoff (Max): 750µA
Input Capacitance (Cies) @ Vce: -
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Dual INT-A-PAK (3 + 8)
Supplier Device Package: Dual INT-A-PAK

패키지: Dual INT-A-PAK (3 + 8)

재고2,144

Half Bridge

600V

530A

1136W

1.45V @ 15V, 300A

750µA

-

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

Dual INT-A-PAK (3 + 8)

Dual INT-A-PAK

VS-GP400TD60S

Vishay Semiconductor Diodes Division

IGBT

IGBT Type: PT, Trench
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 758A
Power - Max: 1563W
Vce(on) (Max) @ Vge, Ic: 1.52V @ 15V, 400A
Current - Collector Cutoff (Max): 200µA
Input Capacitance (Cies) @ Vce: -
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Dual INT-A-PAK (3 + 8)
Supplier Device Package: Dual INT-A-PAK

패키지: Dual INT-A-PAK (3 + 8)

재고5,728

Half Bridge

600V

758A

1563W

1.52V @ 15V, 400A

200µA

-

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

Dual INT-A-PAK (3 + 8)

Dual INT-A-PAK

VS-GT50TP60N

Vishay Semiconductor Diodes Division

IGBT 600V 85A 208W INT-A-PAK

IGBT Type: Trench
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 85A
Power - Max: 208W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 3.03nF @ 30V
Input: Standard
NTC Thermistor: No
Operating Temperature: 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: INT-A-PAK (3 + 4)
Supplier Device Package: INT-A-PAK

패키지: INT-A-PAK (3 + 4)

재고3,536

Half Bridge

600V

85A

208W

2.1V @ 15V, 50A

1mA

3.03nF @ 30V

Standard

No

175°C (TJ)

Chassis Mount

INT-A-PAK (3 + 4)

INT-A-PAK

VS-GP300TD60S

Vishay Semiconductor Diodes Division

IGBT

IGBT Type: PT, Trench
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 580A
Power - Max: 1136W
Vce(on) (Max) @ Vge, Ic: 1.45V @ 15V, 300A
Current - Collector Cutoff (Max): 150µA
Input Capacitance (Cies) @ Vce: -
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Dual INT-A-PAK (3 + 8)
Supplier Device Package: Dual INT-A-PAK

패키지: Dual INT-A-PAK (3 + 8)

재고6,688

Half Bridge

600V

580A

1136W

1.45V @ 15V, 300A

150µA

-

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

Dual INT-A-PAK (3 + 8)

Dual INT-A-PAK

VS-GB150TH120U

Vishay Semiconductor Diodes Division

IGBT 1200V 280A 1147W INT-A-PAK

IGBT Type: -
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 280A
Power - Max: 1147W
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 150A
Current - Collector Cutoff (Max): 5mA
Input Capacitance (Cies) @ Vce: 12.7nF @ 30V
Input: Standard
NTC Thermistor: No
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Double INT-A-PAK (3 + 4)
Supplier Device Package: Double INT-A-PAK

패키지: Double INT-A-PAK (3 + 4)

재고3,312

Half Bridge

1200V

280A

1147W

3.6V @ 15V, 150A

5mA

12.7nF @ 30V

Standard

No

150°C (TJ)

Chassis Mount

Double INT-A-PAK (3 + 4)

Double INT-A-PAK

VS-GB50YF120N

Vishay Semiconductor Diodes Division

IGBT 1200V 66A 330W ECONO

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 66A
Power - Max: 330W
Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 75A
Current - Collector Cutoff (Max): 250µA
Input Capacitance (Cies) @ Vce: -
Input: Standard
NTC Thermistor: No
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: ECONO2 4PACK

패키지: Module

재고7,760

-

1200V

66A

330W

4.5V @ 15V, 75A

250µA

-

Standard

No

150°C (TJ)

Chassis Mount

Module

ECONO2 4PACK

VS-GB200TS60NPBF

Vishay Semiconductor Diodes Division

IGBT 600V 209A 781W INT-A-PAK

IGBT Type: NPT
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 209A
Power - Max: 781W
Vce(on) (Max) @ Vge, Ic: 2.84V @ 15V, 200A
Current - Collector Cutoff (Max): 200µA
Input Capacitance (Cies) @ Vce: -
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: INT-A-PAK (3 + 4)
Supplier Device Package: INT-A-PAK

패키지: INT-A-PAK (3 + 4)

재고4,784

Half Bridge

600V

209A

781W

2.84V @ 15V, 200A

200µA

-

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

INT-A-PAK (3 + 4)

INT-A-PAK

VS-GB150LH120N

Vishay Semiconductor Diodes Division

IGBT 1200V 300A 1389W INT-A-PAK

IGBT Type: -
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 300A
Power - Max: 1389W
Vce(on) (Max) @ Vge, Ic: 1.87V @ 15V, 150A (Typ)
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 10.6nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Double INT-A-PAK (3 + 4)
Supplier Device Package: Double INT-A-PAK

패키지: Double INT-A-PAK (3 + 4)

재고2,752

Single

1200V

300A

1389W

1.87V @ 15V, 150A (Typ)

1mA

10.6nF @ 25V

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

Double INT-A-PAK (3 + 4)

Double INT-A-PAK

VS-20MT050XC

Vishay Semiconductor Diodes Division

MOD IGBT 20A 500V MTP

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: -
NTC Thermistor: No
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,320

-

No

-