Transphorm is a global leader in delivering superior high-efficiency gallium nitride (GaN) power semiconductor products. Announced the release of its 1200 volt field effect transistor simulation model and preliminary data sheet. TP120H070WS Field effect transistor is the only 1200 volt GaN-on-Sapphire power semiconductor launched to date, which is the first of its kind. Its launch demonstrates Transphorm's ability to support future automotive power systems, as well as three-phase power systems already commonly used in the industrial, data communications and renewable energy markets. 
These applications can benefit from higher power density and greater reliability, equivalent or superior performance, and more reasonable cost of 1200 volt gallium nitride devices compared to alternative technologies. Transphorm recently validated the higher performance of gallium nitride devices in a 5kW 900-volt step-down converter at a 100kHz switching frequency. The 1200 volt gallium nitride device achieved an efficiency of 98.7%, exceeding that of mass-produced SiC MosFeTs with similar ratings.
The innovative 1200-volt technology also highlights Transphorm's leadership in gallium nitride power conversion. Vertical integration, extended ownership and proprietary processes, combined with decades of engineering expertise, have enabled the company to bring to market a portfolio of gallium nitride devices with the highest performance and significant differentiating advantages in four areas: manufacturability, actuability, designability and reliability.
Transphorm's 1200-volt technology is based on proven processes and proven technology to meet customer requirements in terms of reliability. The GaN-on-Sapphire process is currently in mass production within the LED market. In addition, the 1200 volt technology takes full advantage of the superior performance, usually switched off gallium nitride platform used in Transphorm's current device portfolio.
The 1200 volt gallium nitride device is not only an ideal solution for a variety of market applications, but also provides unique advantages for automotive systems. For current models of electric vehicles using 400 volt batteries, Transphorm offers 650 volt normally switched SuperGaN field effect transistors, which are AEC-Q101 compliant and have been mass-produced to withstand 175°C temperatures.
The electric vehicle industry, especially in the higher kilowatt nodes of larger vehicles, is moving toward 800-volt batteries in the second half of this decade. Therefore, 1200 volt power transfer switches will be used to provide the required level of performance. As a result, Transphorm's 1200-volt platform is set to feature in a new generation of on-board chargers, DC-DC converters, drive inverters and lever charging systems.
"We are the leading power semiconductor company demonstrating and realising the potential of gallium nitride," said Umesh Mishra, chief Technology officer and co-founder of Transphorm. Our expertise brings to market unmatched gallium nitride devices that set new standards every day in terms of power density, performance and system cost. Our 1200-volt technology is a testament to the innovative vision and determination of our engineering team. We are demonstrating that gallium nitride can easily play a role in an application market previously monopolized by silicon carbide, opening up possibilities for its widespread adoption in the market for our business and for gallium nitride."
