페이지 31 - 트랜지스터 - 양극(BJT) - 어레이 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - 양극(BJT) - 어레이

기록 2,013
페이지  31/72
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
MD984
Central Semiconductor Corp

TRANSISTOR DUAL TO78

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-78-6 Metal Can
  • Supplier Device Package: TO-78-6
패키지: TO-78-6 Metal Can
재고5,408
-
-
-
-
-
-
-
-
Through Hole
TO-78-6 Metal Can
TO-78-6
2N2720
Central Semiconductor Corp

TRANS NPN DUAL TO78

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-78-6 Metal Can
  • Supplier Device Package: TO-78-6
패키지: TO-78-6 Metal Can
재고4,960
-
-
-
-
-
-
-
-
Through Hole
TO-78-6 Metal Can
TO-78-6
BCM856BS/ZLX
Nexperia USA Inc.

TRANS 2NPN 45V 0.1A 6TSSOP

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88-6
패키지: 6-TSSOP, SC-88, SOT-363
재고7,712
-
-
-
-
-
-
-
-
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-88-6
hot XP0555400L
Panasonic Electronic Components

TRANS 2NPN 40V 0.1A SMINI6

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 10mA, 1V
  • Power - Max: 150mW
  • Frequency - Transition: 450MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SMINI6-G1
패키지: 6-TSSOP, SC-88, SOT-363
재고89,640
100mA
40V
250mV @ 1mA, 10mA
100nA (ICBO)
90 @ 10mA, 1V
150mW
450MHz
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SMINI6-G1
XP0550100L
Panasonic Electronic Components

TRANS 2NPN 50V 0.1A SMINI6

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2mA, 10V
  • Power - Max: 150mW
  • Frequency - Transition: 150MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SMINI6-G1
패키지: 6-TSSOP, SC-88, SOT-363
재고5,200
100mA
50V
300mV @ 10mA, 100mA
100µA
160 @ 2mA, 10V
150mW
150MHz
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SMINI6-G1
hot ZDT651TA
Diodes Incorporated

TRANS 2NPN 60V 2A SM8

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
  • Power - Max: 2.75W
  • Frequency - Transition: 175MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-223-8
  • Supplier Device Package: SM8
패키지: SOT-223-8
재고36,000
2A
60V
500mV @ 200mA, 2A
100nA (ICBO)
100 @ 500mA, 2V
2.75W
175MHz
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223-8
SM8
LM394CH/NOPB
Texas Instruments

TRANS 2NPN 20V 0.02A TO99-6

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 20mA
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Vce Saturation (Max) @ Ib, Ic: 100mV @ 100µA, 1mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 500mW
  • Frequency - Transition: -
  • Operating Temperature: -25°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: TO-99-6 Metal Can
  • Supplier Device Package: TO-99-6
패키지: TO-99-6 Metal Can
재고2,304
20mA
20V
100mV @ 100µA, 1mA
-
-
500mW
-
-25°C ~ 85°C (TA)
Through Hole
TO-99-6 Metal Can
TO-99-6
BC857SH6433XTMA1
Infineon Technologies

TRANS 2PNP 45V 0.1A SOT363

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
  • Power - Max: 250mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package: PG-SOT363-6
패키지: 6-VSSOP, SC-88, SOT-363
재고7,744
100mA
45V
650mV @ 5mA, 100mA
15nA (ICBO)
200 @ 2mA, 5V
250mW
250MHz
150°C (TJ)
Surface Mount
6-VSSOP, SC-88, SOT-363
PG-SOT363-6
HCT700
TT Electronics/Optek Technology

TRANS NPN/PNP 50V/60V SMT

  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 800mA, 600mA
  • Voltage - Collector Emitter Breakdown (Max): 50V, 60V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1mA, 10V
  • Power - Max: 400mW
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, No Lead
  • Supplier Device Package: -
패키지: 6-SMD, No Lead
재고6,992
800mA, 600mA
50V, 60V
1V @ 50mA, 500mA
10nA (ICBO)
75 @ 1mA, 10V
400mW
-
-
Surface Mount
6-SMD, No Lead
-
SMA6080
Sanken

TRANS 3NPN/3PNP DARL 60V 12SIP

  • Transistor Type: 3 NPN, 3 PNP Darlington (3-Phase Bridge)
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 4V
  • Power - Max: 4W
  • Frequency - Transition: 50MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 12-SIP, Exposed Tab
  • Supplier Device Package: 12-SIP
패키지: 12-SIP, Exposed Tab
재고2,512
2A
60V
1.5V @ 2mA, 1A
100µA (ICBO)
2000 @ 1A, 4V
4W
50MHz
150°C (TJ)
Through Hole
12-SIP, Exposed Tab
12-SIP
STA322A
Sanken

TRANS 3PNP 50V 3A 8STA

  • Transistor Type: 3 PNP
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 40mA, 2A
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 4V
  • Power - Max: 3W, 15W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 8-SIP
  • Supplier Device Package: 8-SIP
패키지: 8-SIP
재고3,472
3A
50V
1V @ 40mA, 2A
100µA (ICBO)
100 @ 1A, 4V
3W, 15W
-
150°C (TJ)
Through Hole
8-SIP
8-SIP
PBSS5130PAP,115
Nexperia USA Inc.

TRANS 2PNP 30V 1A 6HUSON

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 280mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 170 @ 500mA, 2V
  • Power - Max: 510mW
  • Frequency - Transition: 125MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: DFN2020-6
패키지: 6-UDFN Exposed Pad
재고2,624
1A
30V
280mV @ 50mA, 1A
100nA (ICBO)
170 @ 500mA, 2V
510mW
125MHz
150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
DFN2020-6
hot BC847BVN-7
Diodes Incorporated

TRANS NPN/PNP 45V 0.1A SOT563

  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA / 650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V / 220 @ 2mA, 5V
  • Power - Max: 150mW
  • Frequency - Transition: 300MHz, 200MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
패키지: SOT-563, SOT-666
재고99,204
100mA
45V
600mV @ 5mA, 100mA / 650mV @ 5mA, 100mA
15nA (ICBO)
200 @ 2mA, 5V / 220 @ 2mA, 5V
150mW
300MHz, 200MHz
-65°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
PMBT3904YS,115
Nexperia USA Inc.

TRANS 2NPN 40V 0.2A 6TSSOP

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 500nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
  • Power - Max: 350mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP, SC-88
패키지: 6-TSSOP, SC-88, SOT-363
재고24,018
200mA
40V
300mV @ 5mA, 50mA
500nA (ICBO)
100 @ 10mA, 1V
350mW
300MHz
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
6-TSSOP, SC-88
BC847BPN,165
Nexperia USA Inc.

TRANS NPN/PNP 45V 0.1A 6TSSOP

  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
  • Power - Max: 300mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP, SC-88
패키지: 6-TSSOP, SC-88, SOT-363
재고2,608
100mA
45V
300mV @ 5mA, 100mA
15nA (ICBO)
200 @ 2mA, 5V
300mW
100MHz
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
6-TSSOP, SC-88
DMMT5401-7-F
Diodes Incorporated

TRANS 2PNP 150V 0.2A SOT26

  • Transistor Type: 2 PNP (Dual) Matched Pair
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 150V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
  • Power - Max: 300mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-26
패키지: SOT-23-6
재고353,106
200mA
150V
500mV @ 5mA, 50mA
50nA (ICBO)
60 @ 10mA, 5V
300mW
300MHz
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-26
CA3082
Renesas Electronics Corporation

GEN.P. HIGH CURR. NPN TRANS. C.C

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
MDC3237T1
onsemi

SMALL SIGNAL BIPOLAR TRANSISTOR

  • Transistor Type: 2 NPN
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 150mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
패키지: -
Request a Quote
200mA
15V
150mV @ 5mA, 100mA
-
100 @ 100mA, 5V
150mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
BC856BSH-QF
Nexperia USA Inc.

TRANS 2PNP 65V 0.1A 6TSSOP

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
  • Power - Max: 200mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
패키지: -
Request a Quote
100mA
65V
300mV @ 5mA, 100mA
15nA (ICBO)
200 @ 2mA, 5V
200mW
100MHz
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
6-TSSOP
MPQ2484-TIN-LEAD
Central Semiconductor Corp

TRANS 4NPN 40V

  • Transistor Type: 4 NPN (Quad)
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): 20nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 3W
  • Frequency - Transition: 50MHz
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: 14-DIP (0.300", 7.62mm)
  • Supplier Device Package: TO-116
패키지: -
Request a Quote
-
40V
-
20nA (ICBO)
-
3W
50MHz
-
Through Hole
14-DIP (0.300", 7.62mm)
TO-116
BC817DS-TP
Micro Commercial Co

BIPOLAR TRANSISTORS

  • Transistor Type: 2 NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
  • Power - Max: 300mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-23-6L
패키지: -
Request a Quote
500mA
45V
700mV @ 50mA, 500mA
100nA (ICBO)
160 @ 100mA, 1V
300mW
100MHz
-55°C ~ 150°C
Surface Mount
SOT-23-6
SOT-23-6L
JAN2N2060
Microchip Technology

NPN LOW POWER SILICON TRANSISTOR

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
  • Power - Max: 600mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-78-6 Metal Can
  • Supplier Device Package: TO-78-6
패키지: -
Request a Quote
500mA
60V
300mV @ 5mA, 50mA
10µA (ICBO)
50 @ 10mA, 5V
600mW
-
-65°C ~ 200°C (TJ)
Through Hole
TO-78-6 Metal Can
TO-78-6
2N3838-TR
Microchip Technology

TRANSISTOR DUAL SMALL-SIGNAL BJT

  • Transistor Type: 1 NPN, 1 PNP
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 350mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-FlatPack
  • Supplier Device Package: 6-Flatpack
패키지: -
Request a Quote
600mA
40V
400mV @ 15mA, 150mA
10µA (ICBO)
100 @ 150mA, 10V
350mW
-
-65°C ~ 200°C (TJ)
Surface Mount
6-FlatPack
6-Flatpack
2N6987U-TR
Microchip Technology

TRANSISTOR QUAD SMALL-SIGNAL BJT

  • Transistor Type: 4 PNP (Quad)
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 20-CLCC
  • Supplier Device Package: 20-CLCC
패키지: -
Request a Quote
-
-
1.6V @ 50mA, 500mA
10µA (ICBO)
100 @ 150mA, 10V
-
-
-65°C ~ 200°C (TJ)
Surface Mount
20-CLCC
20-CLCC
JANSF2N2920L
Microchip Technology

RH SMALL-SIGNAL BJT

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 30mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
  • Power - Max: 350mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-78-6 Metal Can
  • Supplier Device Package: TO-78-6
패키지: -
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30mA
60V
300mV @ 100µA, 1mA
10µA (ICBO)
300 @ 1mA, 5V
350mW
-
-65°C ~ 200°C (TJ)
Through Hole
TO-78-6 Metal Can
TO-78-6
MPQ2369-TIN-LEAD
Central Semiconductor Corp

TRANS 4NPN 15V 0.5A

  • Transistor Type: 4 NPN (Quad)
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 400nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 2V
  • Power - Max: 500mW
  • Frequency - Transition: 450MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 14-DIP (0.300", 7.62mm)
  • Supplier Device Package: TO-116
패키지: -
재고396
500mA
15V
250mV @ 1mA, 10mA
400nA (ICBO)
20 @ 100mA, 2V
500mW
450MHz
-65°C ~ 150°C (TJ)
Through Hole
14-DIP (0.300", 7.62mm)
TO-116
JANTX2N2920U-TR
Microchip Technology

DUAL SMALL-SIGNAL BJT

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 30mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
  • Power - Max: 350mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, No Lead
  • Supplier Device Package: U
패키지: -
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30mA
60V
300mV @ 100µA, 1mA
10µA (ICBO)
300 @ 1mA, 5V
350mW
-
-65°C ~ 200°C (TJ)
Surface Mount
6-SMD, No Lead
U
NSS60101DMR6T1G
onsemi

NSS60101DMR6T1G - 60 V, 1 A, LOW

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 5V
  • Power - Max: 400mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: SC-74
패키지: -
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1A
60V
250mV @ 50mA, 1A
100nA (ICBO)
250 @ 100mA, 5V
400mW
200MHz
-55°C ~ 150°C (TJ)
Surface Mount
SC-74, SOT-457
SC-74